IXGH32N170A

IXGH 32N170A IXGT 32N170A High Voltage IGBT Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 32 A IC90 TC = 90°C 21 A ICM TC = 25°C, 1 ms 110 A SSOA (RBSOA) VGE = 15 V, TVJ = 125°C, RG = 5Ω Clamped inductive load tSC TJ = 125°C, VCE = 1200 V; VGE = 15 V, RG = 10Ω 10 PC TC = 25°C 350 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C ICM = 70 @ 0.8 VCES TJ Md Mounting torque (M3) (TO-247) TO-247 TO-268 Symbol Test Conditions BVCES VGE(th) IC IC ICES VCE = 0.8 • VCES VGE = 0 V IGES VCE = 0 V, VGE = ±20 V VCE(sat) IC = IC90, VGE = 15 V © 2004 IXYS All rights reserved µs °C 6 4 g g Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. = 250 µA, VGE = 0 V = 250 µA, VCE = VGE 1700 3.0 Note 1 TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C 4.0 4.8 TO-268 (IXGT) G E C (TAB) TO-247 AD (IXGH) G 300 Weight = 1700 V = 32 A = 5.0 V = 50 ns A 1.13/10Nm/lb.in. Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s VCES IC25 VCE(sat) tfi(typ) 5.0 V V 50 2 µA mA ±100 nA 5.0 V V G = Gate, E = Emitter, C (TAB) C E C = Collector, TAB = Collector Features z International standard packages JEDEC TO-268 and JEDEC TO-247 AD z High current handling capability z MOS Gate turn-on - drive simplicity z Rugged NPT structure z Molding epoxies meet UL 94 V-0 flammability classification Applications z Capacitor discharge & pulser circuits z AC motor speed control z DC servo and robot drives z DC choppers z Uninterruptible power supplies (UPS) z Switched-mode and resonant-mode power supplies Advantages z High power density z Suitable for surface mounting z Easy to mount with 1 screw, (isolated mounting screw hole) DS98942D(09/04) IXGH 32N170A IXGT 32N170A Symbol Test Conditions gfs IC = I90; VCE = 10 V Note 2 Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 16 Cies Coes VCE = 25 V, VGE = 0 V, f = 1 MHz 26 S 3700 pF 180 pF 43 pF 155 nC 28 nC 49 nC 46 ns Cres Qg Qge IC = IC90, VGE = 15 V, VCE = 0.5 VCES Qgc td(on) Inductive load, TJ = 25°°C tri IC = IC25, VGE = 15 V td(off) RG = 2.7 Ω, VCE = 0.5 VCES Note 3 tfi 57 ns 260 500 ns 50 100 ns Eoff 1.5 2.6 mJ td(on) Inductive load, TJ = 125°°C 48 ns tri IC = IC25, VGE = 15 V 59 ns Eon td(off) RG = 2.7 Ω, VCE = 0.5 VCES Note 3 4.0 300 mJ ns tfi 70 ns Eoff 2.4 mJ 0.25 0.35 K/W K/W RthJC RthCK (TO-247) Notes: 1. TO-247 AD Outline ∅P e Dim. Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC TO-268 Outline Device must be heatsunk for high temperature leakage current measurements to avoid thermal runaway. 2. Pulse test, t ≤ 300 µs, duty cycle ≤ 2 % 3. Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG. Dim. A A1 A2 b b2 C D E E1 e H L L1 Millimeter Min. Max. 4.9 5.1 2.7 2.9 .02 .25 1.15 1.45 1.9 2.1 .4 .65 13.80 14.00 15.85 16.05 13.3 13.6 5.45 BSC 18.70 19.10 2.40 2.70 1.20 1.40 Inches Min. Max. .193 .201 .106 .114 .001 .010 .045 .057 .75 .83 .016 .026 .543 .551 .624 .632 .524 .535 .215 BSC .736 .752 .094 .106 .047 .055 L2 L3 L4 1.00 1.15 0.25 BSC 3.80 4.10 .039 .045 .010 BSC .150 .161 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or moreof the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 IXGH 32N170A IXGT 32N170A Fig. 1. Output Characteristics @ 25 Deg. C Fig. 2. Extended Output Characteristics @ 25 deg. C 60 180 VGE = 17V 15V 13V 11V 9V 40 I C - Amperes I C - Amperes 50 30 20 7V VGE = 17V 160 15V 140 13V 120 11V 100 80 9V 60 40 10 20 0 7V 0 0 1 2 3 4 5 6 7 8 9 0 V C E - Volts Fig. 3. Output Characteristics @ 125 Deg. C 60 8 10 12 V C E - Volts 14 16 18 20 V GE = 15V 1.6 40 9V 30 7V 20 10 I C = 42A 1.4 1.2 I C = 21A 1 0.8 0 I C = 10.5A 0.6 0 1 2 3 4 5 6 7 8 9 -50 10 -25 0 V CE - Volts 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. Collector-to-Em itter Voltage vs. Gate-to-Em iiter voltage Fig. 6. Input Adm ittance 10 80 TJ = 25ºC 9 70 60 I C - Amperes 8 VC E - Volts 6 1.8 V C E (sat)- Normalized I C - Amperes 4 Fig. 4. Dependence of V CE(sat) on Tem perature VGE = 17V 15V 13V 11V 50 2 7 6 I C = 42A 5 4 40 30 TJ = 125ºC 25ºC -40ºC 20 21A 3 50 10 10.5A 2 0 6 7 8 9 10 11 12 13 V G E - Volts © 2004 IXYS All rights reserved 14 15 16 17 4 5 6 7 V G E - Volts 8 9 IXGH 32N170A IXGT 32N170A Fig. 7. Transconductance Fig. 8. Dependence of Eoff on RG 8 45 40 35 TJ = -40ºC 25ºC 125ºC 30 E off - milliJoules g f s - Siemens TJ = 125ºC VGE = 15V VCE = 850V 7 25 20 15 I C = 64A 6 5 4 I C = 32A 3 10 2 5 0 1 0 10 20 30 40 50 60 70 80 0 5 15 20 25 R G - Ohms Fig. 9. Dependence of Eoff on Ic Fig. 10. Dependence of Eoff on Tem perature 30 7 4 VGE = 15V VCE = 850V E off - milliJoules 5 R G = 3Ω R G = 15Ω - - - - - TJ = 125ºC 3 2 TJ = 25ºC 1 6 R G = 3Ω R G = 15Ω - - - - - 5 VGE = 15V VCE = 850V I C = 64A 4 3 I C = 32A 2 1 0 I C = 16A 0 16 24 32 40 48 56 25 64 35 I C - Amperes 45 55 65 75 85 95 105 115 125 TJ - Degrees Centigrade Fig. 12. Capacitance Fig. 11. Gate Charge 15 10000 f = 1 MHz VCE = 850V IC = 21A IG= 10mA Capacitance - p F 12 VG E - Volts 10 I C - Amperes 6 E off - MilliJoules I C = 16A 9 6 C ies 1000 C oes 100 C res 3 0 10 0 30 60 90 120 150 0 5 Q G - nanoCoulombs 10 15 20 25 V C E - Volts IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or moreof the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 30 35 40 IXGH 32N170A IXGT 32N170A Fig. 1 3 . M a x im um Tra ns ie nt The r m a l Re s is ta nc e R (th) J C - (ºC/W) 1 0. 1 0 . 01 1 © 2004 IXYS All rights reserved 10 Puls e W idth - millis ec onds 10 0 10 0 0 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications.Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.