IXGH32N60AU1

IXGH 32N60AU1 IXGH 32N60AU1S VCES IC25 VCE(sat) tfi HiPerFASTTM IGBT with Diode Combi Pack = = = = 600 V 60 A 2.9V 125 ns TO-247 SMD (32N60AU1S) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 60 A IC90 TC = 90°C 32 A ICM TC = 25°C, 1 ms 120 A SSOA (RBSOA) VGE = 15 V, TVJ = 125°C, RG = 33 Ω Clamped inductive load, L = 100 µH ICM = 64 @ 0.8 VCES A PC TC = 25°C 200 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C 300 °C TJ Maximum Lead and Tab temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md Mounting torque, TO-247 AD 1.13/10 Weight TO-247 SMD TO-247 AD Symbol Test Conditions BVCES IC = 750µA, VGE = 0 V 600 VGE(th) IC = 250 µA, VCE = VGE 2.5 ICES VCE = 0.8 • VCES VGE = 0 V IGES VCE = 0 V, VGE = ±20 V VCE(sat) IC Nm/lb.in. 4 6 g g Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. TJ = 25°C TJ = 125°C = IC90 , VGE = 15 V ©1996 IXYS Corporation. All rights reserved. IXYS Corporation 3540 Bassett Street, Santa Clara, CA 95054 Phone: (408) 982-0700 Fax: 408-496-0670 V 5.5 V 500 8 µA mA ±100 nA 2.9 V G E C (TAB) TO-247 AD C (TAB) G C G = Gate E = Emitter E C = Collector TAB = Collector Features ● International standard packages JEDEC TO-247 SMD surface mountable and JEDEC TO-247 AD ● High frequency IGBT and antiparallel FRED in one package ● High current handling capability ● 2nd generation HDMOSTM process ● MOS Gate turn-on - drive simplicity Applications ● AC motor speed control ● DC servo and robot drives ● DC choppers ● Uninterruptible power supplies (UPS) ● Switched-mode and resonant-mode power supplies Advantages ● Space savings (two devices in one package) ● High power density ● Suitable for surface mounting ● Switching speed for high frequency applications ● Easy to mount with 1 screw, TO-247 (isolated mounting screw hole) 92794H (3/96) IXYS Semiconductor GmbH Edisonstr. 15, D-68623 Lampertheim Phone: +49-6206-503-0 Fax: +49-6206-503627 IXGH 32N60AU1 IXGH 32N60AU1S Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs IC = IC90; VCE = 10 V, Pulse test, t ≤ 300 µs, duty cycle ≤ 2 % 15 20 S 2500 pF 270 pF Cres 70 pF Qg 125 150 nC 23 35 nC 50 75 nC Cies Coes Qge VCE = 25 V, VGE = 0 V, f = 1 MHz IC = IC90, VGE = 15 V, VCE = 0.5 VCES Qgc td(on) Inductive load, T J = 25°°C 25 ns tri IC = IC90, VGE = 15 V, L = 100 µH, VCE = 0.8 VCES , RG = Roff = 4.7 Ω 30 ns td(off) Eoff Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG td(on) tfi 120 200 ns 125 175 ns 1.8 mJ Inductive load, TJ = 125°°C 25 ns tri IC = IC90, VGE = 15 V, L = 100 µH 35 ns Eon VCE = 0.8 VCES, R G = Roff = 4.7 Ω 1 mJ td(off) Remarks: Switching times may increase for V CE (Clamp) > 0.8 • VCES, higher T J or increased RG 140 ns 260 4 ns mJ 0.25 0.62 K/W K/W tfi Eoff RthJC RthCK Reverse Diode (FRED) TO-247 AD Outline ∅P e Dim. Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 2.87 3.12 b2 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC TO-247 SMD Outline Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions VF IF = IC90 , VGE = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % I RM trr IF = IC90 , VGE = 0 V, -diF /dt = 240 A/µs VR = 360 V TJ = 125°C IF = 1 A; -di/dt = 100 A/µs; VR = 30 V TJ = 25°C RthJC 10 150 35 1.6 V 15 A ns ns 50 1 K/W Min. Recommended Footprint (Dimensions in inches and mm) 1. Gate 2. Collector Dim. A A1 A2 b b1 C D E e 3. Emitter 4. Collector Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .024 .031 .819 .840 .620 .635 .215 BSC L L1 L2 L3 L4 4.90 2.70 2.10 0.00 1.90 5.10 2.90 2.30 0.10 2.10 .193 .106 .083 .00 .075 .201 .114 .091 .004 .083 ØP Q 3.55 5.59 3.65 6.20 .140 .220 .144 .244 R S 4.32 6.15 4.83 BSC .170 .242 .190 BSC IXYS reserves the right to change limits, test conditions, and dimensions. IXYS Corporation 3540 Bassett Street, Santa Clara, CA 95054 Phone: (408) 982-0700 Fax: 408-496-0670 IXYS Semiconductor GmbH Edisonstr. 15, D-68623 Lampertheim Phone: +49-6206-503-0 Fax: +49-6206-503627