IXGH32N90B2

Advance Technical Information HiPerFASTTM IGBT IXGH 32N90B2 B2-Class High Speed IGBTs IXGT 32N90B2 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 900 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 900 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C (limited by leads) 64 A IC110 TC = 110°C 32 A ICM TC = 25°C, 1 ms 200 A SSOA (RBSOA) VGE = 15 V, TVJ = 125°C, RG = 10 Ω Clamped inductive load @ ≤ 600V ICM = 64 A PC TC = 25°C W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C 300 °C Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Md 260 Mounting torque (TO-247) TO-247 (IXGH) C (TAB) G TO-247 TO-268 °C G = Gate, E = Emitter, 6 4 g g VGE(th) IC = 250 μA, VCE = VGE ICES VCE = VCES VGE = 0 V IGES VCE = 0 V, VGE = ±20 V VCE(sat) IC = IC110, VGE = 15 V © 2005 IXYS All rights reserved Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 3.0 TJ = 25°C TJ = 150°C TJ = 125°C 2.2 2.1 5.0 V 50 750 μA μA ±100 nA 2.7 V V C (TAB) C = Collector, TAB = Collector Features z z z High frequency IGBT High current handling capability MOS Gate turn-on - drive simplicity Applications z Test Conditions E G z Symbol C TO-268 (IXGT) 1.13/10Nm/lb.in. Weight = 900 V = 64 A = 2.7 V = 150 ns E 300 TJ VCES IC25 VCE(sat) tfi typ z z z z PFC circuits Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power supplies AC motor speed control DC servo and robot drives DC choppers Advantages z z High power density Very fast switching speeds for high frequency applications DS99384(12/05) IXGH 32N90B2 IXGT 32N90B2 Symbol gfs Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. IC = IC110 A; VCE = 10 V, Pulse test, t ≤ 300 μs, duty cycle ≤ 2 % 18 S 1790 pF 121 pF 49 pF 89 nC 15 nC 34 nC 20 ns ∅P Cies Coes 28 VCE = 25 V, VGE = 0 V, f = 1 MHz Cres Qg Qge IC = IC110 , VGE = 15 V, VCE = 0.5 VCES Qgc td(on) tri Inductive load, TJ = 25°°C td(off) IC = IC110 , VGE = 15 V 260 VCE = 720 V, RG = Roff = 5 Ω 150 ns Eoff 2.6 4.5 mJ td(on) 20 ns tfi tri Eon td(off) 22 Inductive load, TJ = 125°°C IC = IC110 A, VGE = 15 V VCE = 720 V, RG = Roff = 5 Ω Note 1 ns 400 ns 22 ns 0.5 3.8 mJ mJ 360 ns tfi 330 ns Eoff 5.75 mJ RthJC RthCS TO-247 AD Outline e Dim. Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 2.2 2.6 A2 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC TO-268 Outline 0.42 K/W (TO-247) 0.25 K/W Note 1: Eon measured with a DSEP 30-12A ultrafast diode clamp. Min. Recommended Footprint (Dimensions in inches and mm) IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6771478 B2 Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC IXGH 32N90B2 IXGT 32N90B2 Fig. 1. Output Characteristics @ 25 ºC Fig. 2. Extended Output Characteristics @ 25 ºC 240 70 VGE = 15V VGE = 15V 13V 11V 60 50 9V I C - Amperes I C - Amperes 13V 200 40 30 7V 20 11V 160 120 9V 80 7V 40 10 5V 0 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 0 2 4 6 8 Fig. 3. Output Characteristics @ 125 ºC 14 16 18 20 1.5 VGE = 15V VGE = 15V 1.4 VC E (sat)- Normalized 13V 11V 60 50 I C - Amperes 12 Fig. 4. Dependence of V CE(sat) on Tem perature 70 9V 40 7V 30 20 10 I C = 64A 1.3 1.2 1.1 I C = 32A 1.0 0.9 I C = 16A 0.8 5V 0 0.7 0 0.5 1 1.5 2 2.5 3 3.5 4 -50 4.5 -25 V CE - Volts 0 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. Collector-to-Em itter Voltage vs. Gate-to-Em itter voltage Fig. 6. Input Adm ittance 6 140 5.5 I C = 64A 5 32A 16A TJ = 25ºC 120 100 4.5 I C - Amperes VC E - Volts 10 V C E - Volts V C E - Volts 4 3.5 3 80 60 40 TJ = 125ºC 20 -40ºC 25ºC 2.5 2 0 1.5 6 7 8 9 10 11 12 13 V G E - Volts © 2005 IXYS All rights reserved 14 15 16 17 4 5 6 7 V G E - Volts 8 9 10 IXGH 32N90B2 IXGT 32N90B2 Fig. 8. Gate Charge Fig. 7. Transconductance 35 16 30 14 I C = 32A 12 25 I G = 10mA 20 VG E - Volts g f s - Siemens VCE = 450V T J = -40ºC 25ºC 15 125ºC 10 10 8 6 4 5 2 0 0 0 20 40 60 80 0 100 10 I C - Amperes 20 30 40 50 60 70 80 90 100 800 900 Q G - nanoCoulombs Fig. 10. Reverse-Bias Safe Operating Area Fig. 9. Capacitance 10000 70 f = 1 MHz 60 I C - Amperes Capacitance - p F C ies 1000 C oes 50 40 30 100 TJ = 125ºC 20 R G = 10Ω 10 C res dV/dT < 10V/ns 0 10 0 5 10 15 20 25 30 35 100 40 V C E - Volts 200 300 400 500 600 700 V C E - Volts Fig. 11. Maxim um Transient Therm al Resistance R( t h ) J C - ºC / W 1 0.1 0.01 0.1 1 10 Pulse Width - milliseconds IXYS reserves the right to change limits, test conditions, and dimensions. 100 1000 IXGH 32N90B2 IXGT 32N90B2 Fig. 12. Dependence of Turn-off Energy Loss on Gate Resistance Fig. 13. Dependence of Turn-on Energy Loss on Gate Resistance 18 16 16 14 12 E o n - MilliJoules E o f f - MilliJoules TJ = 125º C I C = 64A 14 TJ = 125º C 10 VGE = 15V VCE = 720V 8 I C = 32A 6 12 I C = 32A 6 4 2 2 I C = 16A 0 5 10 15 20 25 30 35 40 45 I C = 16A 0 0 0 50 5 10 15 20 25 30 35 40 45 R G - Ohms R G - Ohms Fig. 14. Dependence of Turn-off Energy Loss on Collector Current Fig. 15. Dependence of Turn-on Energy Loss on Collector Current 16 50 9 R G = 5Ω 14 12 TJ = 125ºC VGE = 15V 7 E o n - MilliJoules VCE = 720V 10 8 6 TJ = 25ºC 4 TJ = 125ºC R G = 5Ω 8 VGE = 15V E o f f - MilliJoules I C = 64A VCE = 720V 8 4 VCE = 720V 6 5 4 TJ = 25ºC 3 2 2 1 0 0 10 20 30 40 50 60 70 10 20 30 40 50 60 I C - Amperes I C - Amperes Fig. 16. Dependence of Turn-off Energy Loss on Tem perature Fig. 17. Dependence of Turn-on Energy Loss on Tem perature 16 70 10 12 R G = 5Ω 9 R G = 5Ω VGE = 15V 8 VGE = 15V 7 VCE = 720V VCE = 720V I C = 64A 10 8 I C = 32A 6 4 E o n - MilliJoules 14 E o f f - MilliJoules VGE = 15V 10 I C = 64A 6 5 IC = 32A 4 3 2 2 IC = 16A 1 I C = 16A 0 25 35 45 55 65 75 85 95 TJ - Degrees Centigrade © 2005 IXYS All rights reserved 105 115 125 0 25 35 45 55 65 75 85 95 TJ - Degrees Centigrade 105 115 125 IXGH 32N90B2 IXGT 32N90B2 Fig. 18. Dependence of Turn-off Sw itching Tim e on Gate Re sistance Fig. 19. Dependence of Turn-on Sw itching Tim e on Gate Resistance 550 400 40 370 360 I C = 16A, 32A, 64A 425 350 IC = 32A, 16A 400 340 375 330 350 320 4 6 8 10 12 14 16 18 120 30 90 I C = 32A 25 60 20 30 I C = 16A 15 20 0 4 6 8 10 12 R G - Ohms 14 16 18 20 Fig. 21. Dependence of Turn-on Sw itching Tim e on Collector Current Fig. 20. Dependence of Turn-off Sw itching Tim e on Collector Current 30 500 tfi - - - - - td(off) 450 28 t d ( o n ) - Nanoseconds RG = 5Ω, VGE = 15V 400 V CE = 720V 350 T J = 125 ºC 300 250 T J = 25 ºC 200 100 150 tri - - - - td(on) 90 RG = 5Ω, VGE = 15V 26 80 V CE = 720V 24 70 22 60 T J = 125 ºC 20 50 18 40 16 30 T J = 25 ºC 14 20 12 10 10 100 15 20 25 30 35 40 45 50 55 60 0 10 65 20 30 40 50 60 70 I C - Amperes I C - Amperes Fig. 22. Dependence of Turn-off Sw itching Tim e on Tem perature Fig. 23. Dependence of Turn-on Sw itching Tim e on Tem perature 40 400 150 tri - - - - - I C = 64A, 32A, 16A 250 I C = 64A, 32A, 16A 200 td(off) tfi - - - - - R G = 5Ω , VGE = 15V 150 RG = 5Ω , V GE = 15V 35 125 V CE = 720V 30 100 I C = 64A 25 75 IC = 32A 20 50 15 25 VCE = 720V IC = 16A 100 10 25 35 45 55 65 75 85 95 105 115 125 T J - Degrees Centigrade IXYS reserves the right to change limits, test conditions, and dimensions. 0 25 35 45 55 65 75 85 95 105 115 125 T J - Degrees Centigrade t r i - Nanoseconds 300 t d ( o n ) - Nanoseconds td(on) 350 t r i - Nanoseconds t d ( o f f ) / t f i - Nanoseconds IC = 64A 35 R G - Ohms t d ( o f f ) / t f i - Nanoseconds 150 T J = 125ºC, V GE = 15V V CE = 720V t r i - Nanoseconds 475 t f i - Nanoseconds 380 V CE = 720V 450 180 tri - - - - - td(on) 390 T J = 125ºC, V GE = 15V 500 45 t d ( o n ) - Nanoseconds 525 t d ( o f f ) - Nanoseconds tfi - - - - - td(off) ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated objective result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. © 2005 IXYS All rights reserved Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications.Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.