IXGH32N90B2D1

Advance Technical Information IXGH 32N90B2D1 IXGT 32N90B2D1 HiPerFASTTM IGBT with Fast Diode B2-Class High Speed IGBTs with Ultrafast Diode Symbol Test Conditions Maximum Ratings VCES IC25 VCE(sat) tfi typ = 900 V = 64 A = 2.7 V = 150 ns TO-247 (IXGH) VCES TJ = 25°C to 150°C 900 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 900 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 64 A IC110 TC = 110°C 32 A ICM TC = 25°C, 1 ms 200 A SSOA (RBSOA) VGE = 15 V, TVJ = 125°C, RG = 10 Ω Clamped inductive load: VCL < 600V ICM = 64 A PC TC = 25°C 300 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C Features 300 °C • High frequency IGBT • High current handling capability • MOS Gate turn-on TJ Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md Mounting torque (TO-247) 1.13/10Nm/lb.in. Weight TO-247 TO-268 6 4 g g C (TAB) G C E TO-268 (IXGT) G C (TAB) E G = Gate E = Emitter C = Collector TAB = Collector - drive simplicity Applications Symbol Test Conditions VGE(th) IC = 250 mA, VCE = VGE ICES VCE = VCES VGE = 0 V IGES VCE = 0 V, VGE = ± 20 V VCE(sat) IC = IC110, VGE = 15 V © 2005 IXYS All rights reserved Characteristic Values (TJ = 25°C unless otherwise specified) min. typ. max. 3.0 TJ = 150°C TJ = 125°C 2.2 2.1 5.0 V 300 1.5 μA mA ± 100 nA 2.7 V V • PFC circuits • Uninterruptible power supplies (UPS) • Switched-mode and resonant-mode power supplies • AC motor speed control • DC servo and robot drives • DC choppers Advantages • High power density • Very fast switching speeds for high frequency applications DS99392(12/05) IXGH 32N90B2D1 IXGT 32N90B2D1 Symbol gfs Test Conditions Characteristic Values (TJ = 25°C unless otherwise specified) Min. Typ. Max. IC = IC110 , VCE = 10 V Pulse test, t < 300 μs, duty cycle < 2 % 18 S 1790 pF 146 pF 49 pF 89 nC 15 nC 34 nC 20 ns ∅P Cies Coes 28 VCE = 25 V, VGE = 0 V, f = 1 MHz C res Qg Qge IC = IC110 , VGE = 15 V, VCE = 0.5 VCES Qgc td(on) tri Inductive load, TJ = 25°C td(off) IC = IC110 , VGE = 15 V 260 VCE = 720 V, RG = Roff = 5 Ω 150 tfi 22 Eoff 2.2 td(on) 20 tri Eon td(off) tfi Inductive load, TJ = 125°C IC = IC110 A, VGE = 15 V VCE = 720 V, RG = Roff = 5 Ω Eoff ns 400 ns ns 4.5 mJ ns 22 ns 3.8 mJ 360 ns 330 ns 5.75 mJ RthJC RthCS TO-247 AD Outline e Dim. Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 2.2 2.6 A2 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC TO-268 Outline 0.42 K/W (TO-247) 0.25 K/W Ultrafast Diode Symbol Conditions Maximum Ratings IF110 TC = 110°C 27 Symbol Conditions (TJ = 25°C unless otherwise specified) Characteristic Values Min. Typ. Max. VF IF = 30 A; IRM t rr IF = 50 A; diF/dt = -100 A/μs; TVJ = 100°C VR = 100 V; VGE = 0 V TVJ = 125°C 2.75 V V 11.4 A ns 0.9 K/W K/W 1.9 5.5 190 RthJC RthCS A 0.25 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or moreof the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6771478 B2 Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC IXGH 32N90B2D1 IXGT 32N90B2D1 Fig. 1. Output Characteristics @ 25 ºC Fig. 2. Extended Output Characteristics @ 25 ºC 240 70 VGE = 15V VGE = 15V 13V 11V 60 50 9V I C - Amperes I C - Amperes 13V 200 40 30 7V 20 11V 160 120 9V 80 7V 40 10 5V 0 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 0 2 4 6 8 Fig. 3. Output Characteristics @ 125 ºC 14 16 18 20 1.5 VGE = 15V VGE = 15V 1.4 VC E (sat)- Normalized 13V 11V 60 50 I C - Amperes 12 Fig. 4. Dependence of V CE(sat) on Tem perature 70 9V 40 7V 30 20 10 I C = 64A 1.3 1.2 1.1 I C = 32A 1.0 0.9 I C = 16A 0.8 5V 0 0.7 0 0.5 1 1.5 2 2.5 3 3.5 4 -50 4.5 -25 V CE - Volts 0 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. Collector-to-Em itter Voltage vs. Gate-to-Em itter voltage Fig. 6. Input Adm ittance 6 140 5.5 I C = 64A 5 32A 16A TJ = 25ºC 120 100 4.5 I C - Amperes VC E - Volts 10 V C E - Volts V C E - Volts 4 3.5 3 80 60 TJ = 125ºC 40 25ºC 2.5 -40ºC 20 2 0 1.5 6 7 8 9 10 11 12 13 V G E - Volts © 2005 IXYS All rights reserved 14 15 16 17 4 5 6 7 V G E - Volts 8 9 10 IXGH 32N90B2D1 IXGT 32N90B2D1 Fig. 8. Gate Charge Fig. 7. Transconductance 35 16 30 14 I C = 32A 12 25 I G = 10mA 20 VG E - Volts g f s - Siemens VCE = 450V T J = -40ºC 25ºC 15 125ºC 10 10 8 6 4 5 2 0 0 0 20 40 60 80 0 100 10 I C - Amperes 20 30 40 50 60 70 80 90 100 800 900 Q G - nanoCoulombs Fig. 10. Reverse-Bias Safe Operating Area Fig. 9. Capacitance 10000 70 f = 1 MHz 60 I C - Amperes Capacitance - p F C ies 1000 C oes 50 40 30 100 TJ = 125ºC 20 R G = 10Ω 10 C res dV/dT < 10V/ns 0 10 0 5 10 15 20 25 30 35 100 40 V C E - Volts 200 300 400 500 600 700 V C E - Volts Fig. 11. Maxim um Transient Therm al Resistance R( t h ) J C - ºC / W 1 0.1 0.01 0.1 1 10 Pulse Width - milliseconds IXYS reserves the right to change limits, test conditions, and dimensions. 100 1000 IXGH 32N90B2D1 IXGT 32N90B2D1 Fig. 12. Dependence of Turn-off Energy Loss on Gate Resistance Fig. 13. Dependence of Turn-on Energy Loss on Gate Resistance 18 16 16 14 12 E o n - MilliJoules E o f f - MilliJoules TJ = 125º C I C = 64A 14 TJ = 125º C 10 VGE = 15V VCE = 720V 8 I C = 32A 6 12 VGE = 15V 10 I C = 64A VCE = 720V 8 I C = 32A 6 4 4 2 2 I C = 16A 0 5 10 15 20 25 30 35 40 45 I C = 16A 0 0 0 50 5 10 15 R G - Ohms Fig. 14. Dependence of Turn-off Energy Loss on Collector Current 30 35 40 45 50 9 R G = 5Ω 14 12 TJ = 125ºC VGE = 15V 7 E o n - MilliJoules VCE = 720V 10 8 6 TJ = 25ºC 4 TJ = 125ºC R G = 5Ω 8 VGE = 15V E o f f - MilliJoules 25 Fig. 15. Dependence of Turn-on Energy Loss on Collector Current 16 VCE = 720V 6 5 4 TJ = 25ºC 3 2 2 1 0 0 10 20 30 40 50 60 70 10 20 30 40 50 60 I C - Amperes I C - Amperes Fig. 16. Dependence of Turn-off Energy Loss on Tem perature Fig. 17. Dependence of Turn-on Energy Loss on Tem perature 16 70 10 12 R G = 5Ω 9 R G = 5Ω VGE = 15V 8 VGE = 15V 7 VCE = 720V VCE = 720V I C = 64A 10 8 I C = 32A 6 4 E o n - MilliJoules 14 E o f f - MilliJoules 20 R G - Ohms I C = 64A 6 5 IC = 32A 4 3 2 2 IC = 16A 1 I C = 16A 0 25 35 45 55 65 75 85 95 TJ - Degrees Centigrade © 2005 IXYS All rights reserved 105 115 125 0 25 35 45 55 65 75 85 95 TJ - Degrees Centigrade 105 115 125 IXGH 32N90B2D1 IXGT 32N90B2D1 Fig. 18. Dependence of Turn-off Sw itching Tim e on Gate Resistance Fig. 19. Dependence of Turn-on Sw itching Tim e on Gate Resistance 550 400 40 370 360 I C = 16A, 32A, 64A 425 350 IC = 32A, 16A 400 340 375 330 350 320 4 6 8 10 12 14 16 18 V CE = 720V 120 30 90 I C = 32A 25 60 20 30 I C = 16A 15 20 0 4 6 8 10 12 R G - Ohms 14 16 18 20 Fig. 21. Dependence of Turn-on Sw itching Tim e on Collector Current Fig. 20. Dependence of Turn-off Sw itching Tim e on Collector Current 30 500 tfi - - - - - td(off) 450 t d ( o n ) - Nanoseconds RG = 5Ω, VGE = 15V 400 V CE = 720V 350 T J = 125 ºC 300 250 T J = 25 ºC 200 100 150 tri - - - - td(on) 28 90 RG = 5Ω, VGE = 15V 26 80 V CE = 720V 24 70 22 60 T J = 125 ºC 20 50 18 40 16 30 T J = 25 ºC 14 20 12 10 10 100 15 20 25 30 35 40 45 50 55 60 0 10 65 20 30 40 50 60 70 I C - Amperes I C - Amperes Fig. 22. Dependence of Turn-off Sw itching Tim e on Tem perature Fig. 23. De pendence of Turn-on Sw itching Tim e on Tem perature 40 400 150 tri - - - - - I C = 64A, 32A, 16A 250 I C = 64A, 32A, 16A 200 td(off) tfi - - - - - R G = 5Ω , VGE = 15V 150 RG = 5Ω , VGE = 15V 35 125 V CE = 720V 30 100 I C = 64A 25 75 I C = 32A 20 50 15 25 VCE = 720V IC = 16A 100 10 25 35 45 55 65 75 85 95 105 115 125 T J - Degrees Centigrade IXYS reserves the right to change limits, test conditions, and dimensions. 0 25 35 45 55 65 75 85 95 105 115 125 T J - Degrees Centigrade t r i - Nanoseconds 300 t d ( o n ) - Nanoseconds td(on) 350 t r i - Nanoseconds t d ( o f f ) / t f i - Nanoseconds IC = 64A 35 R G - Ohms t d ( o f f ) / t f i - Nanoseconds 150 T J = 125ºC, V GE = 15V t r i - Nanoseconds 475 t f i - Nanoseconds 380 V CE = 720V 450 180 tri - - - - - td(on) 390 T J = 125ºC, V GE = 15V 500 45 t d ( o n ) - Nanoseconds 525 t d ( o f f ) - Nanoseconds tfi - - - - - td(off) IXGH 32N90B2D1 IXGT 32N90B2D1 Ultrafast Diode Charateristic Curves 5 70 A 60 60 TVJ= 100°C μC V = 600V R Qr IF 50 IRM IF= 60A IF= 30A IF= 15A TVJ=150°C 30 50 4 3 40 2 20 20 TVJ= 25°C 1 10 10 0 1 2 3 V 0 100 4 0 A/μs 1000 -diF/dt VF Fig. 24. Forward current IF versus VF 2.0 V 120 80 120 C 160 tfr V FR 80 0.8 40 0.4 0 0 200 TVJ 400 600 800 1000 A/μs 0 200 400 -diF/dt Fig. 27. Dynamic parameters Qr, IRM versus TVJ Fig. 28. Recovery time trr versus -diF/dt 2 0.0 600 A/μs 800 1000 diF/dt Fig. 29. Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJC calculation: 1 i K/W 1 2 3 ZthJC 0.1 0.01 0.001 0.00001 μs 140 0.0 40 tfr 1.2 IF= 60A IF= 30A IF=15A 160 0 TVJ= 100°C IF = 30A VFR IRM Qr 600 A/μs 800 1000 -diF/dt 120 TVJ= 100°C VR = 600V 180 0.5 400 220 trr Kf 200 Fig. 26. Peak reverse current IRM versus -diF/dt 200 1.5 0 Fig. 25. Reverse recovery charge Qr versus -diF/dt ns 1.0 IF= 60A IF= 30A IF=15A 40 30 TVJ=100°C 0 TVJ= 100°C VR = 600V A 0.0001 0.001 0.01 s 0.1 t Fig. 30. Transient thermal resistance junction to case © 2005 IXYS All rights reserved 1 Rthi (K/W) ti (s) 0.465 0.179 0.256 0.0052 0.0003 0.0397 Disclaimer Notice - Information furnished is believed to be accurate and reliable. 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