IXGH36N60B3D4

GenX3TM 600V IGBT VCES = 600V IC110 = 36A VCE(sat) ≤ 1.8V IXGH36N60B3D4 Medium speed low Vsat PT IGBT for 5-40kHz switching TO-247 AD (IXGH) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ 600 600 V V VGES VGEM Continuous Transient ±20 ±30 V V IC110 IF110 ICM TC = 110°C TC = 110°C TC = 25°C, 1ms 36 10 200 A A A SSOA (RBSOA) VGE = 15V, TJ = 125°C, RG = 5Ω Clamped inductive load @VCE ≤ 600V ICM = 80 A PC TC = 25°C 250 W -55 ... +150 150 -55 ... +150 °C °C °C 1.13/10 Nm/lb.in. z 300 260 °C °C z 6 g TJ TJM Tstg Md TL TSOLD Mounting torque Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10s Weight G IC IC z z ICES VCE = VCES VGE = 0V IGES VCE = 0V, VGE = ±20V VCE(sat) IC = 30A, VGE = 15V, Note 1 600 3.0 TJ = 125°C © 2008 IXYS CORPORATION, All rights reserved 1.5 Optimized for low conduction and switching losses Square RBSOA Anti-parallel ultra fast diode International standard package Advantages High power density Low gate drive requirement Applications Characteristic Values Min. Typ. Max. = 250μA, VGE = 0V = 250μA, VCE = VGE C = Collector TAB = Collector Features z BVCES VGE(th) TAB E G = Gate E = Emitter z Symbol Test Conditions (TJ = 25°C, unless otherwise specified) C z 5.0 V V 75 500 μA μA ±100 nA z 1.8 V z z z z z z Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts DS99725B(06/08) IXGH36N60B3D4 Symbol Test Conditions (TJ = 25°C, unless otherwise specified) gfs IC = 30A, VCE = 10V, Note 1 Cies Coes Cres VCE = 25V, VGE = 0V, f = 1MHz Characteristic Values Min. Typ. Max. 28 TO-247 (IXGH) AD Outline 42 S 2280 120 32 pF pF pF 80 nC 12 nC 36 nC 19 24 0.54 125 100 ns ns mJ 200 ns 160 ns Eoff 0.80 1.5 mJ td(on) tri Eon td(off) tfi Eoff 19 26 0.90 180 170 1.50 ns ns mJ ns ns mJ 0.21 0.50 °C/W °C/W Qg Qge IC = 30A, VGE = 15V, VCE = 0.5 • VCES Qgc td(on) tri Eon td(off) tfi Inductive load, TJ = 25°C IC = 30A, VGE = 15V VCE = 400V, RG = 5Ω Inductive load, TJ = 125°C IC = 30A, VGE = 15V VCE = 400V, RG = 5Ω RthJC RthCK 1 = Gate 2 = Collector 3 = Emitter Tab = Collector Reverse Diode (FRED) Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VF trr IRM IF = 10A, VGE = 0V, Note 1 IF = 10A, -diF/dt = 200A/μs VR = 300V Characteristic Values Min. Typ. Max. TJ = 150°C 1.7 3.0 V V TJ = 100°C 60 ns 3 4 TJ = 25°C TJ = 100°C RthJC Notes: A A 2.5 °C/W 1.Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXGH36N60B3D4 Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 300 60 VGE = 15V 13V 11V 9V 55 50 240 210 40 35 IC - Amperes IC - Amperes 45 VGE = 15V 13V 11V 270 7V 30 25 20 9V 180 150 120 7V 90 15 10 60 5V 5 30 0 0 0.0 0.4 0.8 1.2 1.6 2.0 5V 2.4 0 2 4 Fig. 3. Output Characteristics @ 125ºC 10 12 14 1.35 VGE = 15V 13V 11V 9V 50 45 1.25 40 35 7V 30 25 20 15 10 1.20 1.05 C = 30A I C = 15A 0.95 0.80 1.6 I 1.00 0 1.2 = 60A 1.10 0.85 0.8 C 1.15 5 0.4 I 0.90 5V 0.0 VGE = 15V 1.30 VCE(sat) - Normalized 55 IC - Amperes 8 Fig. 4. Dependence of VCE(sat) on Junction Temperature 60 2.0 -50 2.4 -25 0 VCE - Volts 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance 240 3.8 3.6 3.4 200 3.2 180 I 2.6 2.4 C IC - Amperes 2.8 TJ = - 40ºC 25ºC 125ºC 220 TJ = 25ºC 3.0 VCE - Volts 6 VCE - Volts VCE - Volts = 60A 30A 15A 2.2 160 140 120 100 80 2.0 60 1.8 1.6 40 1.4 20 1.2 0 5 6 7 8 9 10 11 VGE - Volts © 2008 IXYS CORPORATION, All rights reserved 12 13 14 15 3.5 4.0 4.5 5.0 5.5 6.0 6.5 VGE - Volts 7.0 7.5 8.0 8.5 9.0 IXGH36N60B3D4 Fig. 7. Transconductance Fig. 8. Gate Charge 16 90 TJ = - 40ºC 80 70 60 125ºC 50 I C = 30A I G = 10mA 12 25ºC VGE - Volts g f s - Siemens VCE = 300V 14 40 30 10 8 6 4 20 2 10 0 0 0 30 60 90 120 150 180 210 0 240 10 20 30 50 60 70 80 90 Fig. 10. Reverse-Bias Safe Operating Area Fig. 9. Capacitance 10,000 90 f = 1 MHz 80 70 Cies 1,000 IC - Amperes Capacitance - PicoFarads 40 QG - NanoCoulombs IC - Amperes Coes 60 50 40 30 100 Cres 5 10 15 20 25 30 35 TJ = 125ºC 10 RG = 5Ω dV / dt < 10V / ns 0 100 10 0 20 40 150 200 250 VCE - Volts 300 350 400 450 500 550 600 650 VCE - Volts Fig. 11. Maximum Transient Thermal Impedance Z(th)JC - ºC / W 1.00 0.10 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: G_36N60B3(55)5-05-08-C IXGH36N60B3D4 Fig. 13. Inductive Switching Energy Loss vs. Collector Current Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance 4.5 4.0 C 2.8 = 60A 1.6 I C = 30A 1.5 1.2 1.0 0.5 0 10 20 30 40 50 60 70 80 90 2.8 1.4 2.4 1.2 2.0 1.0 1.6 0.6 0.8 0.8 0.4 0.4 0.4 0.2 0.0 100 110 120 0.0 0.0 15 20 25 30 RG - Ohms 2.0 320 3.6 1.8 300 3.2 1000 TJ = 125ºC, VGE = 15V 260 800 240 700 0.8 t f - Nanoseconds 1.0 I C = 30A td(off) - - - - 280 1.2 900 VCE = 400V 220 I C = 15A, 30A, 60V 600 200 500 1.2 0.6 180 400 0.8 0.4 160 300 0.2 140 200 0.0 125 120 0.4 I C = 15A 0.0 25 35 45 55 65 75 85 95 105 115 0 10 20 30 40 Fig. 16. Inductive Turn-off Switching Times vs. Collector Current 220 200 RG = 5Ω , VGE = 15V 210 190 VCE = 400V 200 td(off) - - - - 220 170 150 160 140 150 140 TJ = 25ºC 120 130 110 120 100 110 90 100 30 35 40 45 IC - Amperes © 2008 IXYS CORPORATION, All rights reserved 100 100 110 120 50 55 60 td(off) - - - - 190 RG = 5Ω , VGE = 15V 210 t f - Nanoseconds 180 160 25 90 180 VCE = 400V 195 170 180 160 165 I C 150 = 30A, 60A 150 140 135 130 120 120 105 I C 110 = 15A 90 25 35 45 55 65 75 85 TJ - Degrees Centigrade 95 105 115 100 125 t d(off) - Nanoseconds 190 TJ = 125ºC 20 80 200 tf 225 t d(off) - Nanoseconds 180 15 70 240 230 tf 130 60 Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature 210 170 50 RG - Ohms TJ - Degrees Centigrade t f - Nanoseconds 60 1.4 - MilliJoules VCE = 400V 55 1.6 on RG = 5Ω , VGE = 15V 1.6 50 1100 tf = 60A E Eoff - MilliJoules C ---- 2.0 45 t d(off) - Nanoseconds I 2.8 Eon 40 Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance 4.0 Eoff 35 IC - Amperes Fig. 14. Inductive Switching Energy Loss vs. Junction Temperature 2.4 0.8 TJ = 25ºC 1.2 I C = 15A 0.0 1.6 VCE = 400V - MilliJoules VCE = 400V 2.0 1.8 TJ = 125ºC on 2.0 - MilliJoules TJ = 125ºC , VGE = 15V 2.5 ---- E 2.4 --- on Eon - Eoff E 3.0 Eon RG = 5Ω , VGE = 15V 3.2 Eoff - MilliJoules I 2.0 Eoff 3.6 3.2 3.5 Eoff - MilliJoules 4.0 3.6 IXGH36N60B3D4 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance 135 td(on) - - - - TJ = 125ºC, VGE = 15V 120 100 55 90 50 90 70 I 75 C = 15A, 30A, 60A 60 60 50 t d(on) - Nanoseconds 80 25 tr td(on) - - - - 24 RG = 5Ω , VGE = 15V 23 VCE = 400V 45 22 TJ = 125ºC 40 21 35 20 30 19 TJ = 25ºC 45 40 30 30 20 17 15 20 15 16 0 10 100 110 120 10 0 10 20 30 40 50 60 70 80 90 25 15 15 RG - Ohms 18 t d(on) - Nanoseconds VCE = 400V 105 t r - Nanoseconds 60 110 tr t r - Nanoseconds 150 20 25 30 35 40 45 50 55 60 IC - Amperes Fig. 20. Inductive Turn-on Switching Times vs. Junction Temperature 65 27 60 26 tr 55 t r - Nanoseconds I C = 60A 45 25 RG = 5Ω , VGE = 15V 24 VCE = 400V 23 40 22 35 21 30 20 I C = 30A 25 19 20 18 I 15 C = 15A t d(on) - Nanoseconds 50 td(on) - - - - 17 10 16 5 25 35 45 55 65 75 85 95 105 115 15 125 TJ - Degrees Centigrade IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: G_36N60B3(55)5-05-08-C IXGH36N60B3D4 30 250 A nC 25 20 T VJ = 100°C 15 IF = 5 A 150 IF = 10 A 8 IRM Qr IF = 5 A A V R = 300 V 200 T VJ = 150°C IF 10 T VJ = 100°C IF = 20 A 6 I F = 10 A I F = 20 A 100 4 50 2 T VJ = 100°C 10 5 0 T VJ = 25°C 0 1 2 0 100 V 3 VF Fig. 21. Forward current IF versus VF Fig. 22. Reverse recovery charge Qr 2.0 ns V R = 300 V 400 600 A/μs 800 1000 -diF/dt 0.3 T VJ = 100°C μs I F = 10 A V FR 40 IF = 5 A 80 t fr 0.2 I F = 10 A 1.0 I F = 20 A I RM 60 20 t fr V FR 0.5 Qr 0.0 200 Fig. 23. Peak reverse current IRM V trr Kf 0 60 T VJ = 100°C 100 1.5 0 A/μs 1000 -diF/dt V R = 300 V 0 40 0.1 40 80 120 C 160 0 200 T VJ 400 600 800 1000 A/μs 0 0 200 400 -diF/dt Fig. 24. Dynamic parameters Qr, IRM Fig. 25. Recovery time trr versus -diF/dt 10 0.0 600 A/μs 800 1000 diF/dt Fig. 26. Peak forward voltage VFR and Constants for ZthJC calculation: K/W i 1 1 2 Z thJC Rthi (K/W) ti (s) 1.449 0.5578 0.0052 0.0003 0.1 0.01 0.001 0.00001 DSEP 8-06B 0.0001 0.001 0.01 0.1 s t 1 Fig. 27. Transient thermal resistance junction-to-case NOTE: Fig. 2 to Fig. 6 shows typical values © 2008 IXYS CORPORATION, All rights reserved IXYS REF: G_36N60B3(55)5-05-08-C Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.