IXGH40N120C3

Preliminary Technical Information GenX3TM 1200V IGBT VCES = IC110 = VCE(sat) ≤ tfi(typ) = IXGH40N120C3 High speed PT IGBTs for 20 - 50 kHz switching Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ VGES VGEM 1200V 40A 4.4V 57ns Maximum Ratings 1200 1200 V V Continuous Transient ±20 ±30 V V IC25 IC110 ICM TC = 25°C (limited by leads) TC = 110°C TC = 25°C, 1ms 75 40 200 A A A IA EAS TC = 25°C TC = 25°C 30 500 A mJ SSOA (RBSOA) VGE = 15V, TJ = 125°C, RG = 3Ω Clamped inductive load @VCE≤ 1200V ICM = 80 A PC TC = 25°C 380 W -55 ... +150 150 -55 ... +150 °C °C °C 1.13 / 10 Nm/lb.in. 300 260 °C °C 6 g TJ TJM Tstg Md Mounting torque TL TSOLD Maximum lead temperature for soldering 1.6mm (0.062 in.) from case for 10s Weight TO-247 (IXGH) G C TAB E G = Gate E = Emitter C = Collector TAB = Collector Features z z z International standard packages: JEDEC TO-247AD IGBT and anti-parallel FRED in one package MOS Gate turn-on - drive simplicity Applications z z z z Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVCES VGE(th) IC IC ICES VCE = VCES VGE = 0V Characteristic Values Min. Typ. Max. = 250μA, VGE = 0V = 250μA, VCE = VGE IGES VCE = 0V, VGE = ±20V VCE(sat) IC 1200 3.0 TJ = 125°C = 30A, VGE = 15V, Note 1 TJ = 125°C © 2008 IXYS CORPORATION, All rights reserved 2.7 z 5.0 V V 75 1.5 μA mA ±100 nA 4.4 V V AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switch-mode and resonant-mode power supplies DS99997(06/08) IXGH40N120C3 Symbol Test Conditions (TJ = 25°C, unless otherwise specified) gfs Cies Coes Cres Characteristic Values Min. Typ. Max. IC = 30A, VCE = 10V, Note 1 18 VCE = 25V, VGE = 0V, f = 1MHz Qg TO-247 (IXGH) Outline 30 S 2930 225 93 pF pF pF 142 nC 19 nC Qgc 62 nC td(on) tri Eon td(off) tfi 17 33 1.8 130 57 ns ns mJ ns ns Qge Eoff td(on) tri Eon td(off) tfi Eoff IC = 40A, VGE = 15V, VCE = 0.5 • VCES Inductive load, TJ = 25°°C IC = 30A, VGE = 15V VCE = 600V, RG = 3Ω Note 1 0.55 Inductive load, TJ = 125°°C IC = 30A, VGE = 15V VCE = 600V, RG = 3Ω Note 1 RthJC RthCK 1.0 mJ 17 35 3.5 177 298 1.6 ns ns mJ ns ns mJ 0.21 0.33 °C/W °C/W 1 2 ∅P 3 e Terminals: 1 - Gate 3 - Source Dim. Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC 2 - Drain Tab - Drain Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC Notes: 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXGH40N120C3 Fig. 1. Output Characteristics @ 25ºC 80 Fig. 2. Extended Output Characteristics @ 25ºC 250 VGE = 15V 13V 11V 70 200 60 9V 175 50 IC - Amperes IC - Amperes VGE = 15V 13V 225 40 7V 30 11V 150 125 9V 100 75 20 7V 50 10 25 5V 0 5V 0 0 1 2 3 4 5 6 0 3 6 9 Fig. 3. Output Characteristics @ 125ºC 18 21 24 27 30 1.3 VGE = 15V 13V 11V 70 VGE = 15V 1.2 60 50 7V 40 I 1.1 9V VCE(sat) - Normalized IC - Amperes 15 Fig. 4. Dependence of VCE(sat) on Junction Temperature 80 30 20 C = 80A 1.0 0.9 0.8 I C = 40A I C = 20A 0.7 0.6 10 5V 0.5 0.4 0 0 1 2 3 4 5 25 6 50 75 VCE - Volts 100 125 150 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance 100 8.0 90 TJ = 25ºC 7.5 80 7.0 70 6.0 I C IC - Amperes 6.5 VCE - Volts 12 VCE - Volts VCE - Volts = 80A 5.5 5.0 60 50 TJ = 125ºC 25ºC - 40ºC 40 30 40A 4.5 20 4.0 10 20A 3.5 0 5 6 7 8 9 10 11 VGE - Volts © 2008 IXYS CORPORATION, All rights reserved 12 13 14 15 4.0 4.5 5.0 5.5 6.0 6.5 VGE - Volts 7.0 7.5 8.0 8.5 IXGH40N120C3 Fig. 7. Transconductance Fig. 8. Gate Charge 45 16 TJ = - 40ºC 40 25ºC 30 VGE - Volts g f s - Siemens 35 125ºC 25 20 15 14 VCE = 600V 12 I G = 10mA I C = 40A 10 8 6 4 10 2 5 0 0 0 10 20 30 40 50 60 70 80 90 100 0 20 40 Fig. 9. Capacitance 80 100 120 140 160 Fig. 10. Reverse-Bias Safe Operating Area 10,000 90 f = 1 MHz 80 70 Cies 1,000 60 IC - Amperes Capacitance - PicoFarads 60 QG - NanoCoulombs IC - Amperes Coes 100 Cres 5 10 15 20 25 30 35 40 30 20 TJ = 125ºC 10 RG = 3Ω dV / dt < 10V / ns 0 200 10 0 50 40 400 600 VCE - Volts 800 1000 1200 VCE - Volts Fig. 11. Maximum Transient Thermal Impedance Z(th)JC - ºC / W 1.00 0.10 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: G_40N120C3(6N)6-03-08 IXGH40N120C3 Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance Fig. 13. Inductive Switching Energy Loss vs. Collector Current 6 4.0 9 Eon - Eoff --- TJ = 125ºC , VGE = 15V 5 5 Eoff - MilliJoules Eoff - MilliJoules 2 - MilliJoules 6 I C = 30A 1 4 0 14 18 22 26 2.5 5 2.0 1.5 3 1.0 2 0.0 0 15 30 20 25 30 3.5 1.0 3 0.5 2 t f - Nanoseconds 4 I C = 30A 0.0 55 65 75 85 95 105 115 td(off) - - - - 700 300 600 I 500 200 400 150 I 100 200 50 100 0 4 6 8 10 12 16 18 20 22 24 26 28 350 30 RG = 3Ω , VGE = 15V 190 350 VCE = 600V 180 200 300 170 TJ = 125ºC 160 200 150 150 140 TJ = 25ºC tf 300 td(off) - - - - 180 RG = 3Ω , VGE = 15V t f - Nanoseconds td(off) - - - - 190 I VCE = 600V 250 C = 30A 170 200 160 150 I C = 60A 150 100 140 50 130 130 50 120 0 110 30 35 40 45 IC - Amperes © 2008 IXYS CORPORATION, All rights reserved 50 55 60 0 25 35 45 55 65 75 85 95 TJ - Degrees Centigrade 105 115 120 125 t d(off) - Nanoseconds tf 400 t d(off) - Nanoseconds t f - Nanoseconds 14 Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature 450 25 300 = 60A 0 1 125 210 20 C RG - Ohms 500 15 = 30A C 250 Fig. 16. Inductive Turn-off Switching Times vs. Collector Current 100 800 VCE = 600V TJ - Degrees Centigrade 250 60 t d(off) - Nanoseconds 5 45 tf 350 1.5 35 55 TJ = 125ºC, VGE = 15V 6 I C = 60A 25 50 900 400 7 VCE = 600V 2.0 45 450 Eon - MilliJoules Eoff - MilliJoules ---- RG = 3Ω , VGE = 15V 2.5 40 Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance 8 Eon 35 IC - Amperes Fig. 14. Inductive Switching Energy Loss vs. Junction Temperature Eoff 1 TJ = 25ºC RG - Ohms 3.0 4 TJ = 125ºC 0.5 3 10 6 VCE = 600V - MilliJoules on 3 7 on 7 ---- E = 60A E C Eon RG = 3Ω , VGE = 15V 3.0 I 4 6 Eoff 3.5 8 VCE = 600V 2 8 IXGH40N120C3 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance 180 90 60 tr 160 td(on) - - - - 80 55 TJ = 125ºC, VGE = 15V C 45 = 60A 100 40 80 I C 35 = 30A t r - Nanoseconds t r - Nanoseconds I t d(on) - Nanoseconds 120 22 RG = 3Ω , VGE = 15V 70 50 VCE = 600V td(on) - - - - 21 VCE = 600V 60 20 50 19 TJ = 125ºC, 25ºC 40 18 30 17 60 30 40 25 20 16 20 20 10 15 15 0 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 14 15 RG - Ohms t d(on) - Nanoseconds 140 23 tr 20 25 30 35 40 45 50 55 60 IC - Amperes Fig. 20. Inductive Turn-on Switching Times vs. Junction Temperature 90 22 80 21 70 20 tr 60 td(on) - - - - RG = 3Ω , VGE = 15V VCE = 600V 50 I 40 C 19 18 = 30A 17 30 t d(on) - Nanoseconds t r - Nanoseconds I C = 60A 16 20 25 35 45 55 65 75 85 95 105 115 15 125 TJ - Degrees Centigrade IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: G_40N120C3(6N)6-03-08 Disclaimer Notice - Information furnished is believed to be accurate and reliable. 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