IXGH40N60

Low VCE(sat) IGBT High speed IGBT IXGH/IXGM 40 N60 IXGH/IXGM 40 N60A Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V I C25 TC = 25°C, limited by leads 75 A I C90 TC = 90°C 40 A I CM TC = 25°C, 1 ms 150 A SSOA (RBSOA) VGE = 15 V, T VJ = 125°C, RG = 22 Ω Clamped inductive load, L = 30 µH ICM = 80 @ 0.8 VCES A PC TC = 25°C 250 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C TJ Md Mounting torque (M3) 1.13/10 Nm/lb.in. Weight TO-204 = 18 g, TO-247 = 6 g Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s °C 300 VCES IC25 VCE(sat) 600 V 600 V 75 A 75 A 2.5 V 3.0 V TO-247 AD (IXGH) G C E TO-204 AE (IXGM) C G = Gate, E = Emitter, C = Collector, TAB = Collector Features International standard packages 2nd generation HDMOSTM process Low VCE(sat) - for low on-state conduction losses High current handling capability MOS Gate turn-on - drive simplicity Voltage rating guaranteed at high temperature (125°C) l l l l l l Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Applications AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switch-mode and resonant-mode power supplies l BVCES IC = 250 µA, VGE = 0 V 600 VGE(th) IC = 250 µA, VCE = VGE 2.5 ICES VCE = 0.8 • VCES VGE = 0 V I GES VCE = 0 V, VGE = ±20 V VCE(sat) IC = IC90, VGE = 15 V V 5 V l l l TJ = 25°C TJ = 125°C 40N60 40N60A 200 1 µA mA ±100 nA 2.5 3.0 V V l Advantages Easy to mount with 1 screw (TO-247) (isolated mounting screw hole) High power density l l © 1996 IXYS All rights reserved 91513E (3/96) IXGH 40N60 IXGM 40N60 IXGH 40N60A IXGM 40N60A Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs I C = IC90; VCE = 10 V, Pulse test, t ≤ 300 µs, duty cycle ≤ 2 % 25 35 S 4500 pF 300 pF Cres 60 pF Qg 200 250 nC 45 80 nC 88 120 nC Cies Coes Qge VCE = 25 V, VGE = 0 V, f = 1 MHz IC = IC90, VGE = 15 V, VCE = 0.5 VCES Qgc Eoff Inductive load, T J = 25°°C IC = IC90 , VGE = 15 V, L = 100 µH VCE = 0.8 VCES, RG = Roff = 22 Ω Switching times may increase for VCE (Clamp) > 0.8 • V CES, 40N60A higher TJ or increased RG 40N60A 3 mJ td(on) Inductive load, TJ = 125°°C 100 ns IC = IC90, VGE = 15 V, L = 100 µH 200 ns 4 mJ td(on) tri td(off) tfi tri Eon td(off) tfi Eoff VCE = 0.8 VCES , RG = R off = 22 Ω 40N60 40N60A Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES , higher 40N60 TJ or increased R G 40N60A 100 ns 200 ns 600 ns 200 ns 600 1000 ns 600 300 2000 800 ns ns 12 6 RthCK 1 = Gate 2 = Collector 3 = Emitter Tab = Collector mJ mJ 0.5 K/W RthJC TO-247 AD Outline 0.25 TO-204AE Outline K/W 1 = Gate 2 = Emitter Case = Collector IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 IXGH 40N60 IXGM 40N60 IXGH 40N60A IXGM 40N60A Fig. 1 Saturation Characteristics Fig. 2 Output Characterstics 350 80 VGE = 15V T J = 25°C 70 300 IC - Amperes IC - Amperes 60 VGE = 15V 50 13V 11V 9V 7V 5V 40 30 20 13V 11V 9V 250 200 150 7V 100 50 10 0 5V 0 0 1 2 3 4 5 0 2 4 6 VCE - Volts 10 12 14 16 18 20 Fig. 4 Temperature Dependence of Output Saturation Voltage 1.5 10 T J = 25°C 9 1.4 VCE(sat) - Normalized 8 7 VCE - Volts 8 VCE - Volts Fig. 3 Collector-Emitter Voltage vs. Gate-Emitter Voltage 6 5 4 3 IC = 40A 2 1 4 5 6 7 8 IC = 80A 1.3 1.2 1.1 IC = 40A 1.0 0.9 IC = 20A 0.8 IC = 20A 0 0.7 -50 9 10 11 12 13 14 15 -25 0 VGE - Volts 25 50 75 100 125 150 TJ - Degrees C Fig. 5 Input Admittance Fig. 6 Temperature Dependence of Breakdown and Threshold Voltage 1.2 80 VCE = 100V VGE(th) @ 250µA BV / VCE(sat) - Normalized 70 60 IC - Amperes T J = 25°C 50 40 30 20 TJ = 25°C 10 1.1 1.0 0.9 BVCES @ 3mA 0.8 0.7 0.6 T J = 125°C 0 0 1 2 3 4 5 6 VGE - Volts © 1996 IXYS All rights reserved 7 8 9 10 0.5 -50 -25 0 25 50 75 TJ - Degrees C 100 125 150 IXGH 40N60 IXGM 40N60 IXGH 40N60A IXGM 40N60A Fig.7 Gate Charge Fig.8 Turn-Off Safe Operating Area 100 15 IC = 40A dV/dt < 3V/ns 10 IC - Amperes VGE - Volts T J = 125°C V CE = 500V 12 9 6 1 0.1 3 0 0.01 0 50 100 150 200 250 0 100 200 Total Gate Charge - (nC) 300 400 500 600 700 VCE - Volts Fig.9 Capacitance Curves 4500 Cies Capacitance - pF 4000 3500 3000 2500 2000 1500 Coes 1000 Cres 500 0 0 5 10 15 20 25 VCE - Volts Fig.10 Transient Thermal Impedance 1 Zthjc (K/W) D=0.5 0.1 D=0.2 D=0.1 D=0.05 D=0.02 D = Duty Cycle 0.01 D=0.01 Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025