IXGH48N60A3

GenX3TM 600V IGBTs IXGA48N60A3 IXGP48N60A3 IXGH48N60A3 VCES = 600V IC110 = 48A VCE(sat) ≤ 1.35V Ultra Low Vsat PT IGBTs for up to 5kHz switching TO-263 (IXGA) G E Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ 600 600 V V VGES VGEM Continuous Transient ±20 ±30 V V IC25 IC110 ICM TC = 25°C TC = 110°C TC = 25°C, 1ms 120 48 300 A A A SSOA (RBSOA) VGE = 15V, TVJ = 125°C, RG = 5Ω Clamped Inductive Load ICM = 96 VCE ≤ VCES A PC TC = 25°C 300 W -55 ... +150 150 -55 ... +150 °C °C °C 300 260 °C °C 10..65 / 2.2..14.6 1.13 / 10 N/lb. Nm/lb.in. 2.5 3.0 6.0 g g g TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s FC Md Mounting Force (TO-263) Mounting Torque (TO-220 & TO-247) Weight TO-263 TO-220 TO-247 C (Tab) TO-220 (IXGP) G CE C (Tab) TO-247 (IXGH) G C E G = Gate E = Emitter C (Tab) C = Collector Tab = Collector Features z z z z Optimized for Low Conduction Losses Square RBSOA High Current Handling Capability International Standard Packages Advantages z Symbol Test Conditions (TJ = 25°C unless otherwise specified) Characteristic Values Min. Typ. Max. BVCES IC = 250μA, VGE = 0V 600 VGE(th) IC = 250μA, VCE = VGE 3.0 ICES VCE = VCES, VGE = 0V V 5.5 VCE = 0V, VGE = ± 20V VCE(sat) IC = 32A, VGE = 15V, Note 1 250 μA ±100 nA 1.18 1.35 Applications V z z z z z z z z z © 2012 IXYS CORPORATION, All Rights Reserved High Power Density Low Gate Drive Requirement V 25 μA TJ = 125°C IGES z Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts Inrush Current Protection Circuits DS99581D(03/12) IXGA48N60A3 IXGP48N60A3 IXGH48N60A3 Symbol Test Conditions (TJ = 25°C unless otherwise specified) Characteristic Values Min. Typ. Max. gfs 30 IC = 32A, VCE = 10V, Note 1 Cies Coes VCE = 25V, VGE = 0V, f = 1MHz Cres Qg Qge IC = 32A, VGE = 15V, VCE = 0.5 • VCES Qgc td(on) Inductive Load, TJ = 25°C tri TO-247 Outline 48 S 3190 pF 175 pF 43 pF 110 nC 21 nC 42 nC 25 ns 30 ns IC = 32A, VGE = 15V 0.95 mJ td(off) VCE = 480V, RG = 5Ω 334 ns tfi Note 2 224 ns 2.9 mJ 24 ns 30 ns Eon Eoff td(on) tri Inductive Load, TJ = 125°C Eon IC = 32A, VGE = 15V 1.97 mJ td(off) VCE = 480V, RG = 5Ω 545 ns tfi Note 2 380 ns 5.6 mJ Eoff 0.42 °C/W RthJC RthCK Notes: 1 = Gate 2 = Collector 3 = Emitter TO-220 TO-247 0.50 0.21 °C/W °C/W TO-220 Outline 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. 2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG. TO-263 Outline Pins: 1 - Gate 3 - Emitter 2 - Collector 1 = Gate 2 = Collector 3 = Emitter 4 = Collector IXYS Reserves the Rght to Change Limits, Test Conditions and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXGA48N60A3 IXGP48N60A3 IXGH48N60A3 Fig. 1. Output Characteristics @ T J = 25ºC Fig. 2. Extended Output Characteristics @ T J = 25ºC 70 VGE = 15V 13V 11V 60 240 IC - Amperes 50 IC - Amperes VGE = 15V 13V 300 9V 40 30 7V 20 11V 180 9V 120 60 10 7V 0 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 1.8 4 8 10 12 Fig. 3. Output Characteristics @ T J = 125ºC Fig. 4. Dependence of VCE(sat) on Junction Temperature 1.4 VGE = 15V 13V 11V 60 VGE = 15V 1.3 VCE(sat) - Normalized 50 9V 40 30 7V 20 10 I C = 64A I C = 32A 14 1.2 1.1 1.0 0.9 I 0.8 0 C = 16A 0.7 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 -50 -25 0 25 VCE - Volts 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance 2.8 200 180 TJ = 25ºC 2.4 160 2.0 C 140 = 64A 32A 16A IC - Amperes I VCE - Volts 6 VCE - Volts 70 IC - Amperes 2 VCE - Volts 1.6 120 100 80 TJ = 125ºC 25ºC - 40ºC 60 1.2 40 20 0.8 0 6 7 8 9 10 11 12 13 VGE - Volts © 2012 IXYS CORPORATION, All Rights Reserved 14 15 4.5 5.0 5.5 6.0 6.5 7.0 7.5 VGE - Volts 8.0 8.5 9.0 9.5 IXGA48N60A3 IXGP48N60A3 IXGH48N60A3 Fig. 7. Transconductance Fig. 8. Gate Charge 16 70 60 TJ = - 40ºC 25ºC 125ºC VCE = 300V 12 I G = 10mA I C = 32A VGE - Volts g f s - Siemens 50 14 40 30 20 10 8 6 4 10 2 0 0 0 10 20 30 40 50 60 70 80 90 0 100 20 40 IC - Amperes 60 80 100 120 QG - NanoCoulombs Fig. 9. Capacitance Fig. 10. Reverse-Bias Safe Operating Area 100 10,000 Capacitance - PicoFarads 90 80 Cies 70 IC - Amperes 1,000 Coes 100 60 50 40 30 20 Cres f = 1 MHz 10 10 0 5 10 15 20 25 30 35 40 0 100 TJ = 125ºC RG = 5Ω dv / dt < 10V / ns 150 200 250 300 VCE - Volts 350 400 450 500 550 600 650 VCE - Volts Fig. 11. Maximum Transient Thermal Impedance Z (th)JC - ºC / W 1 0.1 0.01 0.0001 0.001 0.01 0.1 Pulse Width - Seconds IXYS Reserves the Rght to Change Limits, Test Conditions and Dimensions. 1 10 IXGA48N60A3 IXGP48N60A3 IXGH48N60A3 Fig. 13. Inductive Switching Energy Loss vs. Collector Current Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance 7 14 I C 6 12 6 Eoff 11 --4 TJ = 125ºC , VGE = 15V VCE = 480V I C = 32A 6 3 4 2 2 9 4 7 3 TJ = 125ºC 5 2 3 1 I C = 16A 5 VCE = 480V Eoff - MilliJoules 8 Eon - ---- E on - MilliJoules Eoff Eon RG = 5Ω , VGE = 15V 5 10 Eon - MilliJoules Eoff - MilliJoules 13 = 64A 1 TJ = 25ºC 0 0 10 12 14 16 18 20 22 24 26 28 1 30 0 15 20 25 30 35 RG - Ohms 6 C = 64A 7 3 I C = 32A 6 5 2 Eon - MilliJoules 4 8 4 3 td(off) - - - - 480 VCE = 480V 750 460 I 700 C = 64A 440 650 420 16A 600 400 32A 550 380 16A 32A 500 1 360 2 I C = 16A 1 45 55 65 75 85 95 105 115 800 450 64A 340 0 125 400 0 3 6 9 12 350 440 550 400 500 td(off) - - - 450 RG = 5Ω , VGE = 15V VCE = 480V 250 TJ = 25ºC 150 20 25 30 35 40 45 27 30 50 55 IC - Amperes © 2012 IXYS CORPORATION, All Rights Reserved 60 65 650 tf i td(off) - - - - 600 RG = 5Ω , VGE = 15V VCE = 480V I C 550 = 64A, 32A, 16A 360 500 320 I C = 64A, 32A, 16A 450 280 400 350 240 350 300 200 400 15 24 25 35 45 55 65 75 85 TJ - Degrees Centigrade 95 105 115 300 125 t d(off) - Nanoseconds TJ = 125ºC 600 t d(off) - Nanoseconds t f i - Nanoseconds 450 200 21 480 650 t f i - Nanoseconds 500 300 18 Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature Fig. 16. Inductive Turn-off Switching Times vs. Collector Current tf i 15 RG - Ohms TJ - Degrees Centigrade 400 t d(off) - Nanoseconds I 9 35 65 TJ = 125ºC, VGE = 15V 5 VCE = 480V 25 60 850 tf i 500 ---- RG = 5Ω , VGE = 15V 10 E off - MilliJoules Eon 55 520 t f i - Nanoseconds Eoff 50 Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance 13 11 45 IC - Amperes Fig. 14. Inductive Switching Energy Loss vs. Junction Temperature 12 40 IXGA48N60A3 IXGP48N60A3 IXGH48N60A3 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance 100 56 90 VCE = 480V 44 I C = 64A 60 I 40 C = 32A 50 36 40 32 I C = 16A 30 28 27 25ºC < TJ < 125ºC 50 26 TJ = 25ºC 40 25 30 24 20 23 TJ = 125ºC tr i 10 t d(on) - Nanoseconds 48 28 60 t d(on) - Nanoseconds 70 70 52 TJ = 125ºC, VGE = 15V 80 t r i - Nanoseconds td(on) - - - - t r - Nanoseconds tr i td(on) - - - 22 RG = 5Ω , VGE = 15V VCE = 480V 20 24 10 12 14 16 18 20 22 24 26 28 30 0 21 15 20 25 30 35 40 45 50 55 60 65 IC - Amperes RG - Ohms Fig. 20. Inductive Turn-on Switching Times vs. Junction Temperature 80 28 I C = 64A 27 tr i 60 td(on) - - - - 26 RG = 5Ω , VGE = 15V VCE = 480V 50 25 40 24 I C = 32A 30 23 I C = 16A 20 22 10 25 35 45 55 65 75 85 t d(on) - Nanoseconds t r i - Nanoseconds 70 95 105 115 21 125 TJ - Degrees Centigrade IXYS Reserves the Rght to Change Limits, Test Conditions and Dimensions. IXYS REF: G_48N60A3(56) 7-10-08-A Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.