IXGH48N60A3D1

IXGH48N60A3D1 GenX3TM 600V IGBT w/Diode VCES = 600V IC110 = 48A VCE(sat) ≤ 1.35V Ultra Low Vsat PT IGBT for up to 5kHz switching TO-247 AD Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V VGES Continuous ± 20 V VGEM Transient ± 30 V IC110 TC = 110°C 48 A ICM TC = 25°C, 1ms 300 A SSOA VGE = 15V, TVJ = 125°C, RG = 5Ω ICM = 96 A (RBSOA) Clamped inductive load @ ≤ VCES G TC = 25°C W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C TJ TL 1.6mm (0.062in.) from case for 10s 300 °C TSOLD Plastic body for 10 seconds 260 °C Md Mounting torque 1.13/10 Nm/lb.in. 6 g Weight z z z z z z z z VGE(th) IC = 250μA, VCE = VGE ICES VCE = 0.8 • VCES, VGE = 0V 3.0 5.5 VCE = 0V, VGE = ± 20V VCE(sat) IC = 32A, VGE = 15V, Note 1 High Power Density Low Gate Drive Requirement z z z Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts Inrush Current Protection Circuits 300 μA TJ = 125°C IGES z V Optimized for Low Conduction Losses Square RBSOA Anti-Parallel Ultra Fast Diode High Current Handling Capability International Standard Package Applications z Characteristic Values Min. Typ. Max. C = Collector Tab = Collector Advantages z Symbol Test Conditions (TJ = 25°C unless otherwise specified) Tab Features z 300 E G = Gate E = Emitter z PC C © 2011 IXYS CORPORATION, All Rights Reserved 1.75 mA ±100 nA 1.18 1.35 V DS99926B(11/11) IXGH48N60A3D1 Symbol Test Conditions (TJ = 25°C unless otherwise specified) Characteristic Values Min. Typ. Max. gfs 30 IC = 32A, VCE = 10V, Note 1 TO-247 (IXGH) Outline 48 S 3190 pF 175 pF 43 pF 110 nC 21 nC Qgc 42 nC td(on) 25 ns Cies Coes VCE = 25V, VGE = 0V, f = 1MHz Cres Qg Qge tri IC = 32A, VGE = 15V, VCE = 0.5 • VCES Inductive Load, TJ = 25°C 30 ns IC = 32A, VGE = 15V 0.95 mJ td(off) VCE = 480V, RG = 5Ω 334 ns tfi Note 2 224 ns 2.9 mJ 24 ns 30 ns Eon Eoff td(on) tri Inductive Load, TJ = 125°C Eon IC = 32A, VGE = 15V 1.97 mJ td(off) VCE = 480V, RG = 5Ω 545 ns tfi Note 2 380 ns 5.6 mJ Eoff 0.42 °C/W RthJC RthCS 0.21 °C/W 1 2 ∅P 3 e Terminals: 1 - Gate 3 - Emitter Dim. Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC 2 - Collector Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC Reverse Diode (FRED) (TJ = 25°C, Unless Otherwise Specified) Symbol Test Conditions Characteristic Value Min. Typ. Max. VF IF = 30A,VGE = 0V, Note 1 IRM IF = 30A,VGE = 0V, -diF/dt = 100A/μs, TJ = 100°C trr TJ = 150°C VR = 300V TJ = 100°C IF = 1A, VR = 30V, -diF/dt = 100A/μs 100 25 RthJC Notes: 3.0 V V 4 A 1.6 ns ns 0.9 °C/W 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. 2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG. IXYS Reserves the Rght to Change Limits, Test Conditions and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXGH48N60A3D1 Fig. 1. Output Characteristics @ T J = 25ºC Fig. 2. Extended Output Characteristics @ T J = 25ºC 70 VGE = 15V 13V 11V 60 240 IC - Amperes 50 IC - Amperes VGE = 15V 13V 300 9V 40 30 7V 20 11V 180 9V 120 60 10 7V 0 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 1.8 4 8 10 12 Fig. 3. Output Characteristics @ T J = 125ºC Fig. 4. Dependence of VCE(sat) on Junction Temperature 1.4 VGE = 15V 13V 11V 60 VGE = 15V 1.3 VCE(sat) - Normalized 50 9V 40 30 7V 20 10 I C = 64A I C = 32A 14 1.2 1.1 1.0 0.9 I 0.8 0 C = 16A 0.7 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 -50 -25 0 25 VCE - Volts 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance 2.8 200 180 TJ = 25ºC 2.4 160 2.0 C 140 = 64A 32A 16A IC - Amperes I VCE - Volts 6 VCE - Volts 70 IC - Amperes 2 VCE - Volts 1.6 120 100 80 TJ = 125ºC 25ºC - 40ºC 60 1.2 40 20 0.8 0 6 7 8 9 10 11 12 13 VGE - Volts © 2011 IXYS CORPORATION, All Rights Reserved 14 15 4.5 5.0 5.5 6.0 6.5 7.0 7.5 VGE - Volts 8.0 8.5 9.0 9.5 IXGH48N60A3D1 Fig. 7. Transconductance Fig. 8. Gate Charge 16 70 60 TJ = - 40ºC 25ºC 125ºC VCE = 300V 12 I G = 10mA I C = 32A VGE - Volts g f s - Siemens 50 14 40 30 20 10 8 6 4 10 2 0 0 0 10 20 30 40 50 60 70 80 90 0 100 20 40 IC - Amperes 60 80 100 120 QG - NanoCoulombs Fig. 9. Capacitance Fig. 10. Reverse-Bias Safe Operating Area 100 10,000 Capacitance - PicoFarads 90 80 Cies 70 IC - Amperes 1,000 Coes 100 60 50 40 30 20 Cres f = 1 MHz 10 10 0 5 10 15 20 25 30 35 40 0 100 TJ = 125ºC RG = 5Ω dv / dt < 10V / ns 150 200 250 300 VCE - Volts 350 400 450 500 550 600 650 VCE - Volts Fig. 11. Maximum Transient Thermal Impedance Z (th)JC - ºC / W 1 0.1 0.01 0.0001 0.001 0.01 0.1 Pulse Width - Seconds IXYS Reserves the Rght to Change Limits, Test Conditions and Dimensions. 1 10 IXGH48N60A3D1 Fig. 13. Inductive Switching Energy Loss vs. Collector Current Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance 7 14 I C 6 12 6 Eoff 11 --4 TJ = 125ºC , VGE = 15V VCE = 480V I C = 32A 6 3 4 2 2 9 4 7 3 TJ = 125ºC 5 2 3 1 I C = 16A 5 VCE = 480V Eoff - MilliJoules 8 Eon - ---- E on - MilliJoules Eoff Eon RG = 5Ω , VGE = 15V 5 10 Eon - MilliJoules Eoff - MilliJoules 13 = 64A 1 TJ = 25ºC 0 0 10 12 14 16 18 20 22 24 26 28 1 30 0 15 20 25 30 35 RG - Ohms 6 C = 64A 7 3 I C = 32A 6 5 2 Eon - MilliJoules 4 8 4 3 td(off) - - - - 480 VCE = 480V 750 460 I 700 C = 64A 440 650 420 16A 600 400 32A 550 380 16A 32A 500 1 360 2 I C = 16A 1 45 55 65 75 85 95 105 115 800 450 64A 340 0 125 400 0 3 6 9 12 350 440 550 400 500 td(off) - - - 450 RG = 5Ω , VGE = 15V VCE = 480V 250 TJ = 25ºC 150 20 25 30 35 40 45 27 30 50 55 IC - Amperes © 2011 IXYS CORPORATION, All Rights Reserved 60 65 650 tf i td(off) - - - - 600 RG = 5Ω , VGE = 15V VCE = 480V I C 550 = 64A, 32A, 16A 360 500 320 I C = 64A, 32A, 16A 450 280 400 350 240 350 300 200 400 15 24 25 35 45 55 65 75 85 TJ - Degrees Centigrade 95 105 115 300 125 t d(off) - Nanoseconds TJ = 125ºC 600 t d(off) - Nanoseconds t f i - Nanoseconds 450 200 21 480 650 t f i - Nanoseconds 500 300 18 Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature Fig. 16. Inductive Turn-off Switching Times vs. Collector Current tf i 15 RG - Ohms TJ - Degrees Centigrade 400 t d(off) - Nanoseconds I 9 35 65 TJ = 125ºC, VGE = 15V 5 VCE = 480V 25 60 850 tf i 500 ---- RG = 5Ω , VGE = 15V 10 E off - MilliJoules Eon 55 520 t f i - Nanoseconds Eoff 50 Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance 13 11 45 IC - Amperes Fig. 14. Inductive Switching Energy Loss vs. Junction Temperature 12 40 IXGH48N60A3D1 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance 100 56 90 VCE = 480V 44 I C = 64A 60 I 40 C = 32A 50 36 40 32 I C = 16A 30 28 27 25ºC < TJ < 125ºC 50 26 TJ = 25ºC 40 25 30 24 20 23 TJ = 125ºC tr i 10 t d(on) - Nanoseconds 48 28 60 t d(on) - Nanoseconds 70 70 52 TJ = 125ºC, VGE = 15V 80 t r i - Nanoseconds td(on) - - - - t r - Nanoseconds tr i td(on) - - - 22 RG = 5Ω , VGE = 15V VCE = 480V 20 24 10 12 14 16 18 20 22 24 26 28 30 0 21 15 20 25 30 35 40 45 50 55 60 65 IC - Amperes RG - Ohms Fig. 20. Inductive Turn-on Switching Times vs. Junction Temperature 80 28 I C = 64A 27 tr i 60 td(on) - - - - 26 RG = 5Ω , VGE = 15V VCE = 480V 50 25 40 24 I C = 32A 30 23 I C = 16A 20 22 10 25 35 45 55 65 75 85 t d(on) - Nanoseconds t r i - Nanoseconds 70 95 105 115 21 125 TJ - Degrees Centigrade IXYS Reserves the Rght to Change Limits, Test Conditions and Dimensions. IXYS REF: G_48N60A3(56) 7-10-08-A IXGH48N60A3D1 60 A 1000 nC 50 IF 800 Qr 600 30 25 IF= 60A IF= 30A IF= 15A IRM 20 15 TVJ=100°C 400 20 10 TVJ=25°C 200 10 0 TVJ= 100°C VR = 300V A IF= 60A IF= 30A IF= 15A 40 TVJ=150°C 30 TVJ= 100°C VR = 300V 0 1 0 100 3 V 2 5 A/μs 1000 -diF/dt VF Fig. 22. Reverse recovery charge Qr versus -diF/dt Fig. 21. Forward current IF versus VF 90 2.0 Kf IF= 60A IF= 30A IF= 15A IRM 400 600 A/μs 800 1000 -diF/dt 1.00 TVJ= 100°C IF = 30A μs tfr 0.75 VFR tfr 80 1.0 200 Fig. 23. Peak reverse current IRM versus -diF/dt V VFR 15 trr 1.5 0 20 TVJ= 100°C VR = 300V ns 0 10 0.50 5 0.25 70 0.5 0.0 Qr 0 40 80 120 °C 160 60 0 TVJ 200 400 600 800 1000 A/μs 0 0 400 -diF/dt Fig. 24. Dynamic parameters Qr, IRM versus TVJ Fig. 25. Recovery time trr versus -diF/dt 1 K/W 0.00 600 A/μs 800 1000 diF/dt Fig. 26. Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJC calculation: i 1 2 3 0.1 ZthJC 0.01 0.001 0.00001 200 DSEP 29-06 0.0001 0.001 0.01 Fig. 27. Transient thermal resistance junction to case © 2011 IXYS CORPORATION, All Rights Reserved 0.1 t s 1 Rthi (K/W) ti (s) 0.502 0.193 0.205 0.0052 0.0003 0.0162 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.