IXGH48N60B3

GenX3TM 600V IGBT Medium speed low Vsat PT IGBTs 5-40 kHz switching IXGA48N60B3 IXGP48N60B3* IXGH48N60B3 VCES = 600V IC110 = 48A VCE(sat) ≤ 1.8V *Obsolete Part Number TO-263 (IXGA) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V VGES Continuous ± 20 V VGEM Transient ± 30 V 48 A 280 A IC110 TC = 110°C ICM TC = 25°C, 1ms SSOA VGE = 15V, TVJ = 125°C, RG = 5Ω (RBSOA) Clamped inductive load @ ≤ 600V PC TC = 25°C TJ G ICM = 120 A 300 W E (TAB) TO-220 (IXGP) G C (TAB) E TO-247 (IXGH) -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C TL 1.6mm (0.062 in.) from case for 10s 300 °C TSOLD Plastic body for 10 seconds 260 °C Md Mounting torque (TO-247)(TO-220) 1.13/10 Nm/lb.in. Weight TO-263 TO-220 TO-247 2.5 3.0 6.0 g g g G C (TAB) E G = Gate E = Emitter C = Collector TAB = Collector Features z z z Optimized for low conduction and switching losses Square RBSOA International standard packages Advantages Symbol Test Conditions Characteristic Values (TJ = 25°C unless otherwise specified) Min. BVCES IC = 250μA, VGE = 0V 600 VGE(th) IC = 250μA, VCE = VGE 3.0 ICES VCE = VCES VGE = 0V Typ. Max. z V 5.0 V 25 μA TJ = 125°C IGES VCE = 0V, VGE = ± 20V VCE(sat) IC = 32A, VGE = 15V, Note 1 250 μA ±100 nA 1.8 z V Applications z z z z z z z z © 2008 IXYS CORPORATION, All rights reserved High power density Low gate drive requirement Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts DS99938A(05/08) IXGA48N60B3 IXGP48N60B3 IXGH48N60B3 Symbol Test Conditions (TJ = 25°C unless otherwise specified) gfs Characteristic Values Min. Typ. Max. IC = 30A, VCE = 10V, Note 1 28 TO-247 (IXGH) Outline 46 S 3980 pF 170 pF Cres 45 pF Qg 115 nC Cies Coes Qge VCE = 25V, VGE = 0V, f = 1MHz 21 nC Qgc 40 nC td(on) 22 ns tri Eon td(off) tfi IC = 40A, VGE = 15V, VCE = 0.5 • VCES Inductive Load, TJ = 25°C IC = 30A, VGE = 15V VCE = 480V, RG = 5Ω Eoff td(on) tri Eon td(off) tfi 25 ns 0.84 mJ 130 200 ns 116 200 ns 0.66 1.20 mJ 19 Inductive Load, TJ = 125°C IC = 30A, VGE = 15V VCE = 480V, RG = 5Ω Eoff 25 ns 1.71 mJ 190 ns 157 ns 1.30 mJ RthJC RthCS ns ∅P e Dim. Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 2.2 2.6 A2 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC 0.42 °C/W (TO-247) (TO-220) 0.25 0.50 °C/W °C/W TO-220 (IXGP) Outline Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%. TO-263 (IXGA) Outline Pins: 1 - Gate 3 - Source 2 - Drain 4 - Drain IXYS reserves the right to change limits, test conditions and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXGA48N60B3 IXGP48N60B3 IXGH48N60B3 Fig. 2. Extended Output Characteristics @ 25ºC Fig. 1. Output Characteristics @ 25ºC 80 300 VGE = 15V 13V 11V 70 VGE = 15V 13V 11V 270 9V 240 60 IC - Amperes IC - Amperes 210 50 7V 40 30 9V 180 150 120 90 20 60 10 7V 30 5V 0 0 0.0 0.4 0.8 1.2 1.6 2.0 2.4 0 2.8 2 4 6 Fig. 3. Output Characteristics @ 125ºC 12 14 16 125 150 1.4 VGE = 15V 13V 11V 70 VCE(sat) - Normalized 50 7V 40 30 20 5V 10 VGE = 15V 1.3 9V 60 IC - Amperes 10 Fig. 4. Dependence of VCE(sat) on Junction Temperature 80 I 1.2 C = 80A 1.1 I C = 40A 1.0 0.9 0.8 0 I C = 20A 0.7 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 -50 -25 0 VCE - Volts 25 50 75 100 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance 200 3.8 3.6 180 TJ = 25ºC 3.4 160 3.2 C 2.8 140 = 80A 40A 20A IC - Amperes I 3.0 VCE - Volts 8 VCE - Volts VCE - Volts 2.6 2.4 2.2 120 100 80 60 2.0 TJ = 125ºC 25ºC - 40ºC 40 1.8 20 1.6 1.4 0 5 6 7 8 9 10 11 12 VGE - Volts © 2008 IXYS CORPORATION, All rights reserved 13 14 15 4.0 4.5 5.0 5.5 6.0 6.5 7.0 VGE - Volts 7.5 8.0 8.5 9.0 IXGA48N60B3 IXGP48N60B3 IXGH48N60B3 Fig. 7. Transconductance Fig. 8. Gate Charge 80 16 TJ = - 40ºC 70 60 50 125ºC 40 I C = 40A I G = 10mA 12 25ºC VGE - Volts g f s - Siemens VCE = 300V 14 30 10 8 6 20 4 10 2 0 0 0 20 40 60 80 100 120 140 0 20 40 IC - Amperes 60 80 100 120 QG - NanoCoulombs Fig. 10. Reverse-Bias Safe Operating Area Fig. 9. Capacitance 10,000 140 Cies 100 1,000 IC - Amperes Capacitance - PicoFarads 120 Coes 80 60 100 40 Cres f = 1 MHz 20 10 0 5 10 15 20 25 30 35 0 100 40 TJ = 125ºC RG = 5Ω dV / dt < 10V / ns 150 200 250 VCE - Volts 300 350 400 450 500 550 600 650 VCE - Volts Fig. 11. Maximum Transient Thermal Impedance Z(th)JC - ºC / W 1.00 0.10 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions and dimensions. IXYS REF: G_48N60B3D1(56) 05-05-08-A IXGA48N60B3 IXGP48N60B3 IXGH48N60B3 Fig. 13. Inductive Switching Energy Loss vs. Collector Current 5.0 4.0 4.5 I C = 60A 3.5 2.0 VCE = 480V --- 3.0 TJ = 125ºC , VGE = 15V 2.5 I C = 30A 1.5 2.0 1.0 ---- 3.0 VCE = 480V 2.5 2.5 2.0 2.0 1.5 1.5 TJ = 25ºC 1.0 1.0 0.5 0.5 1.5 0.5 1.0 I C = 15A 0.0 0.5 0 5 10 15 20 25 30 35 40 45 50 0.0 55 0.0 15 20 25 30 RG - Ohms 3.5 Eon I ---- C 45 50 55 60 200 = 60A RG = 5Ω , VGE = 15V 3.0 40 Fig. 15. Inductive Turn-off Switching Times vs. Junction Temperature 3.5 Eoff 35 IC - Amperes Fig. 14. Inductive Switching Energy Loss vs. Junction Temperature 220 tf 190 3.0 on E 2.0 I C = 30A 1.5 1.5 1.0 1.0 0.5 0.5 - MilliJoules 2.0 t f - Nanoseconds 2.5 210 200 VCE = 480V 170 190 I 160 C = 60A, 15A 180 150 170 140 160 I 130 C = 30A 150 120 0.0 25 35 45 55 65 75 85 95 105 115 140 110 I C = 15A 25 35 45 Fig. 16. Inductive Turn-off Switching Times vs. Collector Current 220 220 210 210 200 190 TJ = 125ºC 180 150 170 140 160 130 150 120 140 TJ = 25ºC 110 100 15 20 25 30 35 40 45 85 95 105 115 120 125 50 IC - Amperes © 2008 IXYS CORPORATION, All rights reserved 55 60 650 tf td(off) - - - - 600 TJ = 125ºC, VGE = 15V 550 VCE = 480V 190 500 t f - Nanoseconds 200 170 160 75 I 180 C = 60A 450 170 400 160 350 150 I C 300 = 30A 140 130 130 120 120 250 I C = 15A 200 150 0 5 10 15 20 25 30 RG - Ohms 35 40 45 50 55 t d(off) - Nanoseconds VCE = 480V 180 230 t d(off) - Nanoseconds t f - Nanoseconds td(off) - - - - RG = 5Ω , VGE = 15V 190 65 Fig. 17. Inductive Turn-off Switching Times vs. Gate Resistance 210 tf 55 TJ - Degrees Centigrade TJ - Degrees Centigrade 200 130 I C = 60A, 15A 100 0.0 125 t d(off) - Nanoseconds 2.5 td(off) - - - - RG = 5Ω , VGE = 15V 180 VCE = 480V Eoff - MilliJoules TJ = 125ºC - MilliJoules Eoff - MilliJoules Eon - 2.5 Eon RG = 5Ω , VGE = 15V on 3.0 Eoff E 4.0 3.5 3.0 on 3.5 3.5 Eoff - MilliJoules 4.5 E Eoff - MilliJoules Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance IXGA48N60B3 IXGP48N60B3 IXGH48N60B3 Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance Fig. 19. Inductive Turn-on Switching Times vs. Collector Current 110 70 60 C = 60A 50 60 45 50 40 40 I C 35 = 30A 30 I 10 C = 15A 0 0 5 10 15 20 25 30 35 40 45 50 55 tr 50 RG = 5Ω , VGE = 15V td(on) - - - - 27 25ºC < TJ < 125ºC 26 VCE = 480V 45 25 40 24 35 23 30 22 TJ = 25ºC 25 21 25 20 20 20 15 15 10 30 20 28 19 TJ = 125ºC 18 15 55 t d(on) - Nanoseconds I 70 55 t d(on) - Nanoseconds VCE = 480V 80 60 65 TJ = 125ºC, VGE = 15V 90 t r - Nanoseconds td(on) - - - - t r - Nanoseconds tr 100 20 25 30 35 40 45 50 55 60 IC - Amperes RG - Ohms Fig. 20. Inductive Turn-on Switching Times vs. Junction Temperature 65 28 60 27 55 26 I C = 60A t r - Nanoseconds 25 45 tr td(on) - - - - 40 RG = 5Ω , VGE = 15V 24 23 VCE = 480V 35 22 I C = 30A 30 21 25 20 20 19 I 15 C = 15A t d(on) - Nanoseconds 50 18 10 17 5 25 35 45 55 65 75 85 95 105 115 16 125 TJ - Degrees Centigrade IXYS reserves the right to change limits, test conditions and dimensions. 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