IXGH48N60B3C1

Preliminary Technical Information IXGH48N60B3C1 GenX3TM 600V IGBT w/ SiC Anti-Parallel Diode VCES IC110 VCE(sat) tfi(typ) = = ≤ = 600V 48A 1.8V 116ns Medium Speed Low Vsat PT IGBT 5 - 40 kHz Switching TO-247 Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V VGES Continuous ± 20 V VGEM Transient ± 30 V IC25 IC110 IF110 TC = 25°C (Limited by Leads) TC = 110°C TC = 110°C 75 48 20 A A A ICM TC = 25°C, 1ms 280 A SSOA VGE = 15V, TVJ = 125°C, RG = 5Ω ICM = 120 A (RBSOA) Clamped Inductive Load @ ≤ VCES PC TC = 25°C 300 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C TJ TL 1.6mm (0.062 in.) from Case for 10s 300 °C TSOLD Plastic Body for 10 seconds 260 °C Md Mounting Torque 1.13/10 Nm/lb.in. Weight 6 g G C ( TAB ) E G = Gate E = Emitter C = Collector TAB = Collector Features z z z z Optimized for Low Conduction and Switching Losses Square RBSOA Anti-Parallel Schottky Diode International Standard Package Advantages z z High Power Density Low Gate Drive Requirement Applications Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVCES IC = 250μA, VGE = 0V 600 VGE(th) IC = 250μA, VCE = VGE 3.0 ICES VCE = VCES, VGE = 0V z VCE = 0V, VGE = ± 20V VCE(sat) IC = 32A, VGE = 15V, Note 1 V 5.0 V 50 μA TJ = 125°C IGES z © 2009 IXYS CORPORATION, All Rights Reserved 1.75 mA ±100 nA 1.8 z z z z z z Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts V DS100140A(06/09) IXGH48N60B3C1 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. IC = 30A, VCE = 10V, Note 1 28 TO-247 (IXGH) Outline 46 S 3980 pF 190 pF Cres 45 pF Qg 115 nC 21 nC 40 nC 22 ns Cies Coes Qge VCE = 25V, VGE = 0V, f = 1MHz IC = 40A, VGE = 15V, VCE = 0.5 • VCES Qgc td(on) tri Eon td(off) tfi Inductive Load, TJ = 25°C 26 IC = 30A, VGE = 15V 0.45 VCE = 480V, RG = 5Ω 130 Note 2 Eoff td(on) tri Eon td(off) tfi Eoff Inductive Load, TJ = 125°C IC = 30A, VGE = 15V VCE = 480V, RG = 5Ω Note 2 ns mJ 200 ns 116 200 ns 0.66 1.20 mJ 22 ns 26 ns 0.50 mJ 190 ns 157 ns 1.30 mJ RthJC ∅P e Dim. Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC 0.42 °C/W RthCS 0.21 °C/W Reverse Diode (SiC) Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) VF IF = 20A, VGE = 0V, Note 1 Characteristic Values Min. Typ. Max. 1.65 1.80 TJ = 125°C RthJC Notes 2.10 V V 0.90 °C/W 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. 2. Switching times & energy losses may increase for higher VCE(Clamp), TJ or RG PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXGH48N60B3C1 Fig. 2. Extended Output Characteristics @ 25ºC Fig. 1. Output Characteristics @ 25ºC 300 80 VGE = 15V 13V 11V 70 VGE = 15V 13V 11V 250 9V IC - Amperes IC - Amperes 60 50 7V 40 30 200 9V 150 100 20 7V 50 10 5V 0 0 0.0 0.4 0.8 1.2 1.6 2.0 2.4 0 2.8 2 4 6 80 12 14 16 125 150 1.4 VGE = 15V 13V 11V 70 VCE(sat) - Normalized 50 7V 40 30 20 I 1.2 = 80A C 1.1 I C = 40A 1.0 0.9 0.8 5V 10 VGE = 15V 1.3 9V 60 IC - Amperes 10 Fig. 4. Dependence of VCE(sat) on Junction Temperature Fig. 3. Output Characteristics @ 125ºC I C = 20A 0.7 0 0.0 0.4 0.8 1.2 1.6 2.0 2.4 -50 2.8 -25 0 25 VCE - Volts 50 75 100 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance 3.6 200 180 TJ = 25ºC 3.2 160 2.8 C = 80A 40A 20A 140 IC - Amperes I VCE - Volts 8 VCE - Volts VCE - Volts 2.4 2.0 120 100 80 60 TJ = 125ºC 25ºC - 40ºC 40 1.6 20 0 1.2 5 6 7 8 9 10 11 12 VGE - Volts © 2009 IXYS CORPORATION, All Rights Reserved 13 14 15 4.0 4.5 5.0 5.5 6.0 6.5 VGE - Volts 7.0 7.5 8.0 8.5 9.0 IXGH48N60B3C1 Fig. 7. Transconductance Fig. 8. Gate Charge 16 80 70 14 VCE = 300V 60 12 I G = 10mA 25ºC 50 VGE - Volts g f s - Siemens TJ = - 40ºC 125ºC 40 30 10 8 6 20 4 10 2 0 I C = 40A 0 0 20 40 60 80 100 120 140 0 20 40 IC - Amperes 60 80 100 120 QG - NanoCoulombs Fig. 10. Reverse-Bias Safe Operating Area Fig. 9. Capacitance 10,000 140 100 1,000 IC - Amperes Capacitance - PicoFarads 120 Cies Coes 80 60 100 40 20 Cres f = 1 MHz 0 100 10 0 5 10 15 20 25 30 35 40 TJ = 125ºC RG = 5Ω dV / dt < 10V / ns 200 300 VCE - Volts 400 500 600 VCE - Volts Fig. 11. Maximum Transient Thermal Impedance for IGBT Z (th)JC - ºC / W 1.00 0.10 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. IXYS REF: G_48N60B3C1(5D)6-03-09 IXGH48N60B3C1 Fig. 13. Inductive Switching Energy Loss vs. Collector Current Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance 6 3.5 3.0 Eon - Eoff 5 --- 1.5 2 1.0 I C = 30A 1 I C = 15A 0 10 15 20 25 30 35 40 45 Eoff - MilliJoules E off - MilliJoules = 60A 2.5 2.0 2.0 1.5 1.5 TJ = 125ºC 1.0 0.5 0.5 0.0 0.0 1.0 TJ = 25ºC 20 25 30 VCE = 480V 1.8 210 1.6 200 1.4 190 = 60A 1.2 2.0 1.0 1.6 0.8 I C = 30A 1.2 0.8 0.6 0.0 35 45 55 65 75 85 95 105 115 0.0 125 120 550 VCE = 480V 500 450 I C 350 I C 300 = 30A 250 I C = 15A 200 150 5 10 15 20 25 30 35 40 45 Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature td(off) - - - - 200 220 RG = 5Ω , VGE = 15V 180 200 TJ = 125ºC 180 140 160 120 140 TJ = 25ºC 120 80 100 25 30 35 40 45 220 190 tf i 180 RG = 5Ω , VGE = 15V 210 td(off) - - - - 200 VCE = 480V 170 160 190 I 180 C = 60A, 15A 150 170 140 160 I 130 C = 30A 150 120 100 50 IC - Amperes © 2009 IXYS CORPORATION, All Rights Reserved 55 60 50 140 110 130 I C = 60A, 15A 100 25 35 45 55 65 75 85 95 TJ - Degrees Centigrade 105 115 120 125 t d(off) - Nanoseconds VCE = 480V 400 = 60A Fig. 16. Inductive Turn-off Switching Times vs. Collector Current t d(off) - Nanoseconds t f i - Nanoseconds 600 RG - Ohms tf i 20 td(off) - - - - 150 0.2 240 15 tfi TJ = 125ºC, VGE = 15V TJ - Degrees Centigrade 200 60 160 130 220 160 55 650 170 140 0.4 25 50 180 0.4 I C = 15A t f i - Nanoseconds Eoff - MilliJoules 2.4 C 45 t d(off) - Nanoseconds I 220 Eon - MilliJoules 2.8 2.0 t f i - Nanoseconds ---- RG = 5Ω , VGE = 15V 3.2 40 Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance 4.0 3.6 35 IC - Amperes Fig. 14. Inductive Switching Energy Loss vs. Junction Temperature Eon 0.5 0.0 15 50 RG - Ohms Eoff 3.0 E on - MilliJoules C Eon - MilliJoules I 3 ---- VCE = 480V 2.5 2.0 Eon RG = 5Ω , VGE = 15V VCE = 480V 4 5 Eoff 3.0 2.5 TJ = 125ºC , VGE = 15V 3.5 IXGH48N60B3C1 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance 120 75 tr i TJ = 125ºC, VGE = 15V I 60 55 50 60 45 = 30A C 40 40 35 25 I C = 15A 20 0 15 5 10 15 20 25 30 35 40 45 td(on) - - - - VCE = 480V 50 26 40 24 30 22 20 20 10 18 0 50 16 15 20 25 30 td(on) - - - - 28 26 35 24 I C = 30A 25 22 15 20 55 60 TJ = 25ºC TJ = 125ºC 30 20 10 = 15A 5 25 50 40 IF - Amperes RG = 5Ω , VGE = 15V t d(on) - Nanoseconds t r i - Nanoseconds tr i VCE = 480V C 45 50 30 I 40 Fig. 21. Forward Current vs. Forward Voltage 65 45 35 IC - Amperes Fig. 20. Inductive Turn-on Switching Times vs. Junction Temperature I C = 60A 28 TJ = 25ºC, 125ºC RG - Ohms 55 30 RG = 5Ω , VGE = 15V 60 30 20 tr i t d(on) - Nanoseconds 80 I 32 70 65 = 60A t d(on) - Nanoseconds t r i - Nanoseconds VCE = 480V C t r - Nanoseconds 100 80 70 td(on) - - - - 35 45 55 65 75 85 95 105 115 18 125 0 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 VF - Volts TJ - Degrees Centigrade Fig. 22. Maximum Transient Thermal Impedance for Diodes 1.000 Z (th)JC - ºC / W 0.100 0.010 0.001 0.00001 0.0001 0.001 0.01 0.1 1 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. IXYS REF: G_48N60B3C1(5D)6-03-09 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. 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