IXGH48N60C3

IXGI48N60C3* IXGA48N60C3 IXGP48N60C3 IXGH48N60C3 GenX3TM 600V IGBT High-Speed PT IGBTs for 40-100kHz Switching VCES = IC110 = VCE(sat)  tfi(typ) = *Obsolete Part Number Symbol Test Conditions VCES TC = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1M 600 V VGES Continuous ± 20 V VGEM Transient ± 30 V IC25 IC110 TC = 25°C TC = 110°C 75 48 A A ICM TC = 25°C, 1ms 250 A  IA TC = 25°C 30 A  EAS TC = 25°C 300 mJ  SSOA VGE = 15V, TVJ = 125°C, RG = 3 ICM = 100 A (RBSOA) Clamped Inductive Load VCE  VCES PC TC = 25°C 600V 48A 2.5V 38ns Maximum Ratings Features   300 W -55 ... +150 °C TJM 150 °C  Tstg -55 ... +150 °C  TJ TL Maximum Lead Temperature for Soldering 300 °C TSOLD 1.6 mm (0.062in.) from Case for 10s 260 °C FC Md Mounting Force (TO-263) Mounting Torque (TO-247&TO-220) 10..65 / 2.5..14.6 1.13/10 N/lb. Nm/lb.in. Weight TO-262 Lead TO-263 TO-220 TO-247 0.4 2.5 3.0 6.0 g g g g Advantages       Characteristic Values (TJ = 25°C Unless Otherwise Specified) Min. BVCES IC = 250A, VGE = 0V 600 VGE(th) IC = 250A, VCE = VGE 3.0 ICES VCE = VCES, VGE = 0V IGES VCE = 0V, VGE = ± 20V VCE(sat) IC = 30A, VGE = 15V, Note 1 Typ. High Power Density Low Gate Drive Requirement Applications  Symbol Test Conditions Optimized for Low Switching Losses Square RBSOA Avalanche Rated Fast Switching International Standard Packages  High Frequency Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts Max. V 5.5 V 25 A 250 A TJ = 125°C ±100 nA TJ = 125°C © 2018 IXYS CORPORATION, All Rights Reserved 2.3 1.8 2.5 V V DS99953C(11/18) IXGI48N60C3 IXGA48N60C3 IXGP48N60C3 IXGH48N60C3 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. IC = 30A, VCE = 10V, Note 1 20 TO-262 Lead (IXGI) 30 S 1960 pF 207 pF Cres 66 pF Qg 77 nC 16 nC Qgc 32 nC td(on) 19 ns 26 ns 0.41 mJ Cies Coes Qge VCE = 25V, VGE = 0V, f = 1MHz IC = 30A, VGE = 15V, VCE = 0.5 • VCES tri Inductive Load, TJ = 25°C Eon IC = 30A, VGE = 15V td(off) VCE = 400V, RG = 3 60 Note 2 38 tfi 100 ns ns Eoff 0.23 0.42 td(on) 19 ns 26 ns 0.65 mJ Inductive Load, TJ = 125°C Eon IC = 30A, VGE = 15V td(off) VCE = 400V, RG = 3 92 ns tfi Note 2 95 ns 0.57 mJ RthJC RthCS 0.42 °C/W (TO-247) (TO-220) 0.21 0.50 C TO-263 (IXGA) G E C (Tab) TO-220 (IXGP) °C/W °C/W G C E C (Tab) TO-247 (IXGH) G C G = Gate E = Emitter Notes: C (Tab) E mJ tri Eoff G E C (Tab) C = Collector Tab = Collector 1. Pulse test, t  300μs, duty cycle, d  2%. 2. Switching times & energy losses may increase for higher VCE(Clamp), TJ or RG. IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXGI48N60C3 IXGA48N60C3 IXGP48N60C3 IXGH48N60C3 Fig. 2. Extended Output Characteristics @ TJ = 25oC o Fig. 1. Output Characteristics @ TJ = 25 C 300 60 VGE = 15V 13V 11V 270 13V 210 40 9V 30 20 180 150 11V 120 90 60 10 7V 9V 30 0 7V 0 0 0.4 0.8 1.2 1.6 2 2.4 2.8 0 3.2 2 4 6 8 10 12 14 16 VCE - Volts VCE - Volts Fig. 3. Output Characteristics @ TJ = 125oC Fig. 4. Dependence of VCE(sat) on Junction Temperature 1.2 60 VGE = 15V 13V 11V 18 20 VGE = 15V 1.1 VCE(sat) - Normalized 50 40 I C - Amperes VGE = 15V 240 I C - Amperes I C - Amperes 50 9V 30 20 I C = 60A 1.0 0.9 I C = 30A 0.8 0.7 7V 10 0.6 I C = 15A 0.5 0 0 0.4 0.8 1.2 1.6 2 2.4 25 2.8 50 VCE - Volts Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage 100 125 150 Fig. 6. Input Admittance 100 5.0 o 90 TJ = 25 C 4.5 80 70 I C - Amperes 4.0 VCE - Volts 75 TJ - Degrees Centigrade I C = 60A 30A 15A 3.5 3.0 60 o TJ = 125 C 50 o 25 C o - 40 C 40 30 20 2.5 10 2.0 0 7 8 9 10 11 12 13 VGE - Volts © 2018 IXYS CORPORATION, All Rights Reserved 14 15 5.0 5.5 6.0 6.5 7.0 7.5 8.0 VGE - Volts 8.5 9.0 9.5 10.0 IXGI48N60C3 IXGA48N60C3 IXGP48N60C3 IXGH48N60C3 Fig. 7. Transconductance Fig. 8. Gate Charge 50 16 o TJ = - 40 C 14 VCE = 300V 12 I G = 10 mA I C = 30A 40 30 VGE - Volts g f s - Siemens o 25 C o 125 C 20 10 8 6 4 10 2 0 0 0 20 40 60 80 100 0 120 10 20 30 I C - Amperes 40 50 60 70 80 QG - NanoCoulombs Fig. 10. Reverse-Bias Safe Operating Area Fig. 9. Capacitance 10,000 f = 1 MHz 100 80 1,000 I C - Amperes Capacitance - PicoFarads Cies C oes 100 60 40 o TJ = 125 C C res 20 10 0 5 10 15 20 25 30 35 0 200 40 RG = 3Ω dv / dt < 10V / ns 250 300 350 VCE - Volts 400 450 500 550 600 650 VCE - Volts Fig. 11. Maximum Transient Thermal Impedance Z(th)JC - K / W 1 0.1 0.01 0.00001 0.0001 0.001 0.01 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. 0.1 1 10 IXGI48N60C3 IXGA48N60C3 IXGP48N60C3 IXGH48N60C3 Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance Fig. 13. Inductive Switching Energy Loss vs. Collector Current 2.4 2.6 Eoff Eoff 2.2 I C = 30A 1.0 0.4 I C = 15A 0.6 0.0 E off - MilliJoules 0.8 10 15 20 25 30 o 0.8 0.4 0.4 0 15 35 20 25 30 RG - Ohms 2.0 Eon tfi 0.4 t f i - Nanoseconds Eoff - MilliJoules I C = 30A I C = 15A 0.0 85 95 105 115 250 I C = 60A 100 90 150 100 70 50 0 5 10 15 25 30 Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature 160 110 td(off) tfi 140 100 35 o TJ = 125 C 80 80 60 70 40 t f i - Nanoseconds 90 100 100 90 I C = 60A 80 80 I C = 30A 60 70 I C = 15A 60 40 50 20 o 110 VCE = 400V 120 120 60 TJ = 25 C 20 15 20 25 30 35 40 45 50 I C - Amperes © 2018 IXYS CORPORATION, All Rights Reserved 55 60 25 35 45 55 65 75 85 95 TJ - Degrees Centigrade 105 115 50 125 t d(off) - Nanoseconds t d(off) - Nanoseconds 100 td(on) RG = 3Ω, VGE = 15V VCE = 400V t f i - Nanoseconds 20 RG - Ohms RG = 3Ω, VGE = 15V 120 200 I C = 30A 80 0.0 125 Fig. 16. Inductive Turn-off Switching Times vs. Collector Current tfi 300 110 TJ - Degrees Centigrade 140 td(off) o TJ = 125 C, VGE = 15V I C = 15A 0.4 75 60 t d(off) - Nanoseconds 0.8 - MilliJoules 0.8 on 1.2 65 55 VCE = 400V E 1.2 55 50 350 120 1.6 VCE = 400V 45 45 130 I C = 60A RG = 3ΩVGE = 15V 35 40 Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance 2.0 25 35 I C - Amperes Fig. 14. Inductive Switching Energy Loss vs. Junction Temperature 1.6 o TJ = 125 C, 25 C 0.8 0.0 0.2 5 1.2 - MilliJoules - MilliJoules 1.4 1.2 on on 1.2 E E 1.8 I C = 60A Eoff 1.6 VCE = 400V 1.6 0 Eon RG = 3ΩVGE = 15V 1.6 VCE = 400V E off - MilliJoules 2 Eon o TJ = 125 C , VGE = 15V 2.0 2.0 IXGI48N60C3 IXGA48N60C3 IXGP48N60C3 IXGH48N60C3 Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance 140 120 50 tri 120 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current td(on) 45 o TJ = 125 C, VGE = 15V tri 100 35 60 30 40 25 20 20 I C = 15A, 30A 0 0 5 10 15 15 20 25 30 t r i - Nanoseconds t r i - Nanoseconds 80 24 VCE = 400V 80 o 22 o 25 C < TJ < 125 C 60 20 40 18 20 16 0 35 t d(on) - Nanoseconds t d(on) - Nanoseconds 40 I C = 60A td(on) RG = 3Ω, VGE = 15V VCE = 400V 100 26 14 15 20 25 30 35 40 45 50 55 60 I C - Amperes RG - Ohms Fig. 20. Inductive Turn-on Switching Times vs. Junction Temperature 80 25 70 24 I C = 60A tri 23 td(on) RG = 3Ω, VGE = 15V 50 22 VCE = 400V 40 21 I C = 30A 30 20 20 19 10 18 I C = 15A 0 25 35 45 55 65 75 85 95 105 t d(on) - Nanoseconds t r i - Nanoseconds 60 115 17 125 TJ - Degrees Centigrade IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. IXYS REF: G_48N60C3(5D) 6-23-11-C IXGI48N60C3 IXGA48N60C3 IXGP48N60C3 IXGH48N60C3 TO - 262 Leaded Outline Pins: 1 - Gate 2,4 - Collector 3 - Emitter TO-263 Outline TO-247 Outline TO-220 Outline 1 - Gate 2,4 - Drain 3 - Source © 2018 IXYS CORPORATION, All Rights Reserved 1 - Gate 2,4 - Drain 3 - Source 1 - Gate 2,4 - Drain 3 - Source Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.