IXGH50N120C3

Preliminary Technical Information GenX3TM 1200V IGBT VCES = IC110 = VCE(sat) ≤ tfi(typ) = IXGH50N120C3 High speed PT IGBTs for 20 - 50 kHz switching 1200V 50A 4.2V 64ns TO-247 (IXGH) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ VGES VGEM 1200 1200 V V Continuous Transient ±20 ±30 V V IC25 IC110 ICM TC = 25°C (limited by leads) TC = 110°C TC = 25°C, 1ms 75 50 250 A A A IA EAS TC = 25°C TC = 25°C 40 750 A mJ SSOA (RBSOA) VGE = 15V, TJ = 125°C, RG = 3Ω Clamped inductive load @VCE≤ 1200V ICM = 100 A PC TC = 25°C 460 W -55 ... +150 150 -55 ... +150 °C °C °C 1.13 / 10 Nm/lb.in. 300 260 °C °C 6 g TJ TJM Tstg Md Mounting torque TL TSOLD Maximum lead temperature for soldering 1.6mm (0.062 in.) from case for 10s Weight G BVCES VGE(th) IC IC = 250μA, VGE = 0V = 250μA, VCE = VGE ICES VCE = VCES VGE = 0V IGES VCE = 0V, VGE = ±20V VCE(sat) IC 1200 3.0 z z z TJ = 125°C = 40A, VGE = 15V, Note 1 TJ = 125°C © 2008 IXYS CORPORATION, All rights reserved 2.6 V V 100 2 μA mA ±100 nA 4.2 V V International standard packages: JEDEC TO-247AD IGBT and anti-parallel FRED in one package MOS Gate turn-on - drive simplicity Applications z z z 5.0 C = Collector TAB = Collector Features z Characteristic Values Min. Typ. Max. TAB E G = Gate E = Emitter z Symbol Test Conditions (TJ = 25°C, unless otherwise specified) C AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switch-mode and resonant-mode power supplies DS99996(06/08) IXGH50N120C3 Symbol Test Conditions (TJ = 25°C, unless otherwise specified) gfs Cies Coes Cres Characteristic Values Min. Typ. Max. IC = 40A, VCE = 10V, Note 1 24 VCE = 25V, VGE = 0V, f = 1MHz Qg Qge 40 S 4190 330 130 pF pF pF 196 nC 24 nC 84 nC 20 34 2.2 123 64 ns ns mJ ns ns IC = 50A, VGE = 15V, VCE = 0.5 • VCES Qgc td(on) tri Eon td(off) tfi Inductive load, TJ = 25°°C IC = 40A, VGE = 15V VCE = 600V, RG = 2Ω Note 1 0.63 Eoff td(on) tri Eon td(off) tfi Eoff Inductive load, TJ = 125°°C IC = 40A, VGE = 15V VCE = 600V, RG = 2Ω Note 1 RthJC RthCK TO-247 (IXGH) Outline 1.2 mJ 20 35 4.3 170 315 2.1 ns ns mJ ns ns mJ 0.21 0.27 °C/W °C/W 1 2 ∅P 3 e Terminals: 1 - Gate 3 - Source Dim. Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC 2 - Drain Tab - Drain Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC Notes: 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXGH50N120C3 Fig. 1. Output Characteristics @ 25ºC 100 Fig. 2. Extended Output Characteristics @ 25ºC 275 VGE = 15V 13V 11V 90 80 225 9V IC - Amperes 60 7V 50 11V 200 70 IC - Amperes VGE = 15V 13V 250 40 30 175 9V 150 125 100 7V 75 20 50 10 5V 25 0 5V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 0 3 6 9 18 21 24 27 30 1.3 100 VGE = 15V 13V 11V 90 80 VGE = 15V 1.2 1.1 VCE(sat) - Normalized 9V 70 IC - Amperes 15 Fig. 4. Dependence of VCE(sat) on Junction Temperature Fig. 3. Output Characteristics @ 125ºC 60 7V 50 40 30 I C = 100A 1.0 0.9 0.8 I C = 50A I C = 25A 0.7 0.6 20 5V 10 0.5 0.4 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 25 5.0 50 VCE - Volts 75 100 125 150 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance 90 8.0 7.5 TJ = 25ºC 80 7.0 70 IC - Amperes 6.5 VCE - Volts 12 VCE - Volts VCE - Volts 6.0 5.5 I C = 100A 5.0 60 50 TJ = 125ºC 25ºC - 40ºC 40 30 4.5 50A 20 4.0 10 3.5 25A 3.0 0 5 6 7 8 9 10 11 VGE - Volts © 2008 IXYS CORPORATION, All rights reserved 12 13 14 15 4.0 4.5 5.0 5.5 6.0 VGE - Volts 6.5 7.0 7.5 IXGH50N120C3 Fig. 7. Transconductance Fig. 8. Gate Charge 60 16 TJ = - 40ºC 55 50 VCE = 600V 12 I G = 10mA I C = 50A 45 25ºC 40 VGE - Volts g f s - Siemens 14 35 125ºC 30 25 20 15 10 8 6 4 10 2 5 0 0 0 10 20 30 40 50 60 70 80 90 100 0 20 40 60 80 100 120 140 160 180 200 QG - NanoCoulombs IC - Amperes Fig. 9. Capacitance Fig. 10. Reverse-Bias Safe Operating Area 10,000 110 90 80 1,000 IC - Amperes Capacitance - PicoFarads 100 Cies Coes 100 50 40 20 f = 1 MHz 10 10 5 60 30 Cres 0 70 10 15 20 25 30 35 40 TJ = 125ºC RG = 2Ω dV / dt < 10V / ns 0 200 400 600 VCE - Volts 800 1000 1200 VCE - Volts Fig. 11. Maximum Transient Thermal Impedance Z(th)JC - ºC / W 1.00 0.10 0.01 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: G_50N120C3(7N)6-03-08 IXGH50N120C3 Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance Fig. 13. Inductive Switching Energy Loss vs. Collector Current 6.0 Eon - Eoff 5.5 --- 12 4.5 11 4.0 9 Eoff TJ = 125ºC , VGE = 15V 3.5 7 3.0 6 I C = 40A 2.5 1.5 3 4 5 6 7 8 9 10 11 12 13 14 6 2.5 5 TJ = 125ºC 2.0 4 1.5 3 1.0 5 2.0 3.0 4 0.5 3 0.0 2 TJ = 25ºC 30 40 RG - Ohms 2.4 450 9 400 8 350 7 2.0 6 1.6 5 1.2 4 0.0 25 35 45 55 65 75 85 95 105 115 600 tf td(off) - - - - 450 300 400 I 250 300 150 I 250 = 80A 2 50 150 1 125 0 100 2 3 4 5 6 7 8 9 10 11 12 13 14 15 Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature 240 td(off) - - - - VCE = 600V 200 TJ = 125ºC 180 200 160 150 140 100 120 TJ = 25ºC 50 100 0 80 IC - Amperes © 2008 IXYS CORPORATION, All rights reserved 70 80 td(off) - - - - 170 I C = 40A RG = 2Ω , VGE = 15V 220 300 60 tf 300 t f - Nanoseconds 350 RG = 2Ω , VGE = 15V 180 VCE = 600V 250 160 200 150 150 I C = 80A 140 100 130 50 120 0 25 35 45 55 65 75 85 95 TJ - Degrees Centigrade 105 115 110 125 t d(off) - Nanoseconds tf 350 t d(off) - Nanoseconds t f - Nanoseconds C RG - Ohms 400 50 350 200 260 40 = 40A 3 450 30 C 200 Fig. 16. Inductive Turn-off Switching Times vs. Collector Current 20 500 VCE = 600V TJ - Degrees Centigrade 250 550 TJ = 125ºC, VGE = 15V 100 I C = 40A 0.4 t f - Nanoseconds I C = 80A 0.8 80 t d(off) - Nanoseconds VCE = 600V 2.8 10 Eon - MilliJoules Eoff - MilliJoules ---- RG = 2Ω , VGE = 15V 3.2 70 500 11 Eon 60 Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance 4.0 Eoff 50 IC - Amperes Fig. 14. Inductive Switching Energy Loss vs. Junction Temperature 3.6 1 0 20 15 - MilliJoules 8 - MilliJoules 4.0 Eoff - MilliJoules 9 = 80A 7 VCE = 600V on C on I 8 E 4.5 2 3.5 10 VCE = 600V E Eoff - MilliJoules 5.0 ---- Eon RG = 2Ω , VGE = 15V IXGH50N120C3 Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance Fig. 19. Inductive Turn-on Switching Times vs. Collector Current 180 td(on) - - - - 55 TJ = 125ºC, VGE = 15V C = 80A 45 100 I C = 40A 22 50 21 40 20 30 19 20 18 20 10 17 15 0 25 20 0 2 3 4 5 6 7 8 9 10 11 12 13 14 24 60 30 40 TJ = 125ºC, 25ºC 23 35 60 25 VCE = 600V 80 70 40 80 t d(on) - Nanoseconds I 120 26 RG = 2Ω , VGE = 15V 90 50 VCE = 600V td(on) - - - - 16 20 15 RG - Ohms t d(on) - Nanoseconds 140 27 tr 100 t r - Nanoseconds tr 160 t r - Nanoseconds 110 60 30 40 50 60 70 80 IC - Amperes 90 26 80 25 I C = 80A 70 24 tr 60 td(on) - - - - RG = 2Ω , VGE = 15V VCE = 600V 50 40 I C 23 22 21 = 40A 30 t d(on) - Nanoseconds t r - Nanoseconds Fig. 20. Inductive Turn-on Switching Times vs. Junction Temperature 20 20 25 35 45 55 65 75 85 95 105 115 19 125 TJ - Degrees Centigrade IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: G_50N120C3(7N)6-03-08 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.