IXGH50N60A

HiPerFASTTM IGBT IXGH50N60A VCES IXGH50N60AS IC25 VCE(sat) tfi Surface Mountable Symbol Test Conditions VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V I C25 TC = 25°C 75 A I C90 TC = 90°C 50 A I CM TC = 25°C, 1 ms 200 A SSOA (RBSOA) VGE = 15 V, T VJ = 125°C, RG = 10 Ω Clamped inductive load, L = 30 µH ICM = 100 @ 0.8 VCES A PC TC = 25°C 250 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C 300 °C Maximum Lead and Tab temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md Mounting torque, TO-247 AD Weight Symbol IC = 250 µA, VGE = 0 V 600 VGE(th) IC = 250 µA, VCE = VGE 2.5 ICES VCE = 0.8 • VCES VGE = 0 V I GES VCE = 0 V, VGE = ±20 V VCE(sat) IC = IC90, VGE = 15 V © 1996 IXYS All rights reserved 4 6 g g Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. BVCES TJ = 25°C TJ = 125°C C (TAB) G E TO-247 AD (50N60A) C (TAB) 1.13/10 Nm/lb.in. TO-247 SMD TO-247 AD Test Conditions TO-247 SMD (50N60AS) Maximum Ratings TJ = 600 V = 75 A = 2.7 V = 275 ns V 5 G C G = Gate, E = Emitter, E C = Collector, TAB = Collector Features l International standard packages JEDEC TO-247 SMD surface mountable and JEDEC TO-247 AD l High frequency IGBT l High current handling capability l 2nd generation HDMOSTM process l MOS Gate turn-on - drive simplicity Applications l AC motor speed control l DC servo and robot drives DC choppers l Uninterruptible power supplies (UPS) l Switch-mode and resonant-mode power supplies l V 200 1 µA mA ±100 nA 2.7 V Advantages High power density l Suitable for surface mounting l Switching speed for high frequency applications l Easy to mount with 1 screw, TO-247 (insulated mounting screw hole) l 92797H(9/96) IXGH50N60A Symbol Test Conditions gfs I C = I C90; VCE = 10 V, Pulse test, t ≤ 300 µs, duty cycle ≤ 2 % 25 35 S ∅P 4000 pF 430 pF Cres 100 pF Qg 200 Q ge VCE = 25 V, VGE = 0 V, f = 1 MHz IC = IC90, VGE = 15 V, VCE = 0.5 VCES Qgc td(on) Inductive load, T J = 25°°C tri Eoff IC = IC90, VGE = 15 V, L = 30 µH, VCE = 0.8 VCES , RG = Roff = 2.7 Ω Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG td(on) Inductive load, TJ = 125°°C tri IC = IC90, VGE = 15 V, L = 30 µH td(off) tfi Eon VCE = 0.8 V CES, RG = Roff = 2.7 Ω td(off) Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES , higher TJ or increased RG tfi Eoff TO-247 AD Outline Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Cies Coes IXGH50N60AS nC 35 50 nC 80 100 nC 50 ns 210 ns 200 275 ns 400 ns 4.8 mJ 50 ns 240 ns 3 mJ 280 ns 600 ns 9.6 mJ e Dim. Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC TO-247 SMD Outline 0.50 K/W RthJC RthCK 250 0.25 K/W Min. Recommended Footprint (Dimensions in inches and (mm)) 1. Gate 2. Collector Dim. A A1 A2 b b1 C D E e L L1 L2 L3 L4 ØP Q R S 3. Emitter 4. Collector Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 Inches Min. Max. .190 .205 .090 .100 .075 .085 1.14 1.91 0.61 20.80 15.75 5.45 4.90 2.70 2.10 0.00 1.90 3.55 5.59 1.40 2.13 0.80 21.34 16.13 BSC 5.10 2.90 2.30 0.10 2.10 3.65 6.20 .045 .075 .024 .819 .620 .215 .193 .106 .083 .00 .075 .140 .220 .055 .084 .031 .840 .635 BSC .201 .114 .091 .004 .083 .144 .244 4.32 6.15 4.83 BSC .170 .242 .190 BSC IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 IXGH50N60A Fig. 1 Saturation Characteristics Fig. 2 350 80 70 300 IC - Amperes 60 IC - Amperes Output Characterstics VGE = 15V T J = 25°C VGE = 15V 50 13V 11V 9V 7V 5V 40 30 20 7V 100 0 3 9V 150 0 2 4 5 5V 0 2 4 6 VCE - Volts Fig. 4 10 12 14 16 18 20 Temperature Dependence of Output Saturation Voltage 1.5 10 T J = 25°C 9 1.4 VCE(sat) - Normalized 8 7 VCE - Volts 8 VCE - Volts Fig. 3 Collector-Emitter Voltage vs. Gate-Emitter Voltage 6 5 4 3 IC = 40A 2 1 4 5 6 7 8 IC = 80A 1.3 1.2 1.1 IC = 40A 1.0 0.9 IC = 20A 0.8 IC = 20A 0 0.7 -50 9 10 11 12 13 14 15 -25 0 VGE - Volts 25 50 75 100 125 150 TJ - Degrees C Fig. 5 Input Admittance Fig. 6 Temperature Dependence of Breakdown and Threshold Voltage 1.2 80 VCE = 100V VGE(th) @ 250µA BV / VCE(sat) - Normalized 70 60 IC - Amperes T J = 25°C 200 50 1 13V 11V 250 10 0 IXGH50N60AS 50 40 30 20 TJ = 25°C 10 1.1 1.0 0.9 BVCES @ 3mA 0.8 0.7 0.6 T J = 125°C 0 0 1 2 3 4 5 6 VGE - Volts © 1996 IXYS All rights reserved 7 8 9 10 0.5 -50 -25 0 25 50 75 TJ - Degrees C 100 125 150 IXGH50N60A Fig.7 Gate Charge 15 IXGH50N60AS Fig.8 Turn-Off Safe Operating Area 100 IC = 40A V CE = 500V 10 IC - Amperes VGE - Volts 12 9 6 T J = 125°C dV/dt < 3V/ns 1 0.1 3 0.01 0 0 50 100 150 200 250 0 100 Total Gate Charge - (nC) 200 300 400 500 600 700 VCE - Volts Fig.9 Capacitance Curves 4500 Capacitance - pF 4000 Cies 3500 3000 2500 2000 1500 Coes 1000 Cres 500 0 0 5 10 15 20 25 VCE - Volts Fig.10 Transient Thermal Impedance 1 ZthJC (K/W) D=0.5 0.1 D=0.2 D=0.1 D=0.05 D=0.02 D = Duty Cycle 0.01 D=0.01 Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - seconds G50N60 2 JNB IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025