IXGH56N60A3

Advance Technical Information IXGH56N60A3 GenX3TM 600V IGBT VCES = IC110 = VCE(sat) ≤ 600V 56A 1.35V Ultra-Low Vsat PT IGBT for up to 5 kHz Switching TO-247 Symbol Test Conditions Maximum Ratings VCES VCGR TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ VGES 600 600 V V VGEM Continuous Transient ± 20 ± 30 V V IC25 IC110 ICM TC = 25°C (Chip Capability) TC = 110°C TC = 25°C, 1ms 150 56 370 A A A SSOA (RBSOA) VGE = 15V, TVJ = 125°C, RG = 5Ω Clamped Inductive Load ICM = 150 VCE ≤ 0.8 • VCES A Pd TC = 25°C 330 W - 55 ... +150 150 - 40 ... +150 °C °C °C 300 260 °C °C 1.13/10 Nm/lb.in. 6 g TJ TJM Tstg TL TSOLD 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10 seconds Md Mounting torque Weight G G CD ES G = Gate E = Emitter (TAB) C = Collector TAB = Collector Features z z Optimized for Low Conduction Losses International Standard Package Advantages z z High Power Density Low Gate Drive Requirement Applications z z Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVCES IC = 250μA, VCE = 0V 600 VGE(th) IC = 250μA, VCE = VGE 3.0 ICES VCE = VCES, VGE = 0V IGES VCE = 0V, VGE = ±20V VCE(sat) IC = 44A, VGE = 15V, Note 1 z z V 5.0 V 50 μA 500 μA TJ = 125°C ±100 nA TJ = 125°C © 2009 IXYS CORPORATION, All Rights Reserved 1.22 1.22 1.35 z z z z z Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts Inrush Current Protection Circuits V V DS100174(08/09) IXGH56N60A3 Symbol Test Conditions (TJ = 25°C unless otherwise specified) Characteristic Values Min. Typ. Max. gfs IC = 44A, VCE = 10V, Note 1 33 Cies Coes Cres VCE = 25V, VGE = 0V, f = 1MHz Qg Qge Qgc td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff IC = 44A, VGE = 15V VCE = 480V, RG = 5Ω Note 2 Inductive load, TJ = 125°C IC = 44A, VGE = 15V VCE = 480V, RG = 5Ω Note 2 RthJC RthCS Notes: 55 S 3950 220 56 pF pF pF 140 nC 26 nC 52 nC 26 42 1.00 310 315 3.75 ns ns mJ ns ns mJ IC = 44A, VGE = 15V, VCE = 0.5 • VCES Inductive load, TJ = 25°C TO-247 (IXGH) Outline 550 6.50 24 42 2.00 495 415 6.75 ns ns mJ ns ns mJ 0.21 0.375 °C/W °C/W 1 2 ∅P 3 e Terminals: 1 - Gate 3 - Source Dim. Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC 2 - Drain Tab - Drain Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. 2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXGH56N60A3 Fig. 1. Output Characteristics Fig. 2. Extended Output Characteristics @ T J = 25ºC @ T J = 25ºC 350 90 VGE = 15V 13V 11V 80 70 VGE = 15V 13V 11V 300 50 IC - Amperes IC - Amperes 250 60 9V 40 30 7V 200 9V 150 100 20 50 10 0 7V 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 1.8 1 2 4 5 6 7 8 VCE - Volts Fig. 3. Output Characteristics Fig. 4. Dependence of VCE(sat) on Junction Temperature @ T J = 125ºC 9 10 1.4 90 VGE = 15V 13V 11V 80 VGE = 15V 1.3 70 9V VCE(sat) - Normalized IC - Amperes 3 VCE - Volts 60 50 7V 40 30 I C = 88A I C = 44A I C = 22A 1.2 1.1 1.0 0.9 20 10 0.8 5V 0.7 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 -50 2.0 -25 0 VCE - Volts Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage 50 75 100 125 150 7.0 7.5 8.0 Fig. 6. Input Admittance 100 3.2 90 TJ = 25ºC 2.8 80 TJ = 125ºC 25ºC - 40ºC 70 I 2.0 C = 88A 44A 22A IC - Amperes 2.4 VCE - Volts 25 TJ - Degrees Centigrade 1.6 60 50 40 30 20 1.2 10 0.8 0 5 6 7 8 9 10 11 12 13 VGE - Volts © 2009 IXYS CORPORATION, All Rights Reserved 14 15 4.0 4.5 5.0 5.5 6.0 VGE - Volts 6.5 IXGH56N60A3 Fig. 7. Transconductance Fig. 8. Gate Charge 70 16 60 TJ = - 40ºC 25ºC 125ºC VCE = 300V 12 I G = 10mA I C = 44A VGE - Volts g f s - Siemens 50 14 40 30 20 10 8 6 4 10 2 0 0 0 10 20 30 40 50 60 70 80 90 100 0 20 40 IC - Amperes 60 80 100 120 140 QG - NanoCoulombs Fig. 10. Reverse-Bias Safe Operating Area Fig. 9. Capacitance 10,000 160 120 1,000 100 IC - Amperes Capacitance - PicoFarads 140 Cies Coes 100 Cres f = 1 MHz 10 0 5 10 15 20 25 30 35 40 80 60 40 TJ = 125ºC 20 RG = 5Ω dv / dt < 10V / ns 0 100 200 VCE - Volts 300 400 500 600 VCE - Volts Fig. 11. Maximum Transient Thermal Impedance Z(th)JC - ºC / W 1.00 0.10 0.01 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. IXYS REF: G_56N60A3(65)8-04-09-C IXGH56N60A3 Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance Fig. 13. Inductive Switching Energy Loss vs. Collector Current 20 Eon - Eoff 18 --- 8 18 7 16 TJ = 125ºC , VGE = 15V VCE = 480V = 88A 5 12 4 10 3 I C = 44A 8 4 5 10 15 20 25 30 35 40 45 3.5 3.0 2.5 TJ = 125ºC 8 2.0 6 1.5 4 1 2 0 0 1.0 TJ = 25ºC 0.0 20 30 40 50 60 70 80 IC - Amperes Fig. 14. Inductive Switching Energy Loss vs. Junction Temperature Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance RG = 5Ω , VGE = 15V I C = 88A 4.8 500 4.0 10 3.2 8 2.4 I C = 44A Eon - MilliJoules 12 520 1100 tfi td(off) - - - - 1000 TJ = 125ºC, VGE = 15V VCE = 480V 900 480 800 I 460 C = 88A 700 440 I C 600 = 44A 6 1.6 420 500 4 0.8 400 400 0.0 125 380 25 35 45 55 65 75 85 95 105 115 300 5 10 15 20 25 TJ - Degrees Centigrade td(off) - - - - 300 280 TJ = 25ºC 200 200 70 80 IC - Amperes © 2009 IXYS CORPORATION, All Rights Reserved 90 t f i - Nanoseconds 360 60 50 500 VCE = 480V 500 450 450 400 IC = 44A 400 350 IC = 88A 350 300 300 250 250 25 35 45 55 65 75 85 95 TJ - Degrees Centigrade 105 115 200 125 t d(off) - Nanoseconds 400 t d(off) - Nanoseconds 440 TJ = 125ºC td(off) - - - - RG = 5Ω , VGE = 15V 520 500 50 45 550 tfi 550 RG = 5Ω , VGE = 15V VCE = 480V 40 40 600 600 tfi 30 35 Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature 700 20 30 RG - Ohms Fig. 16. Inductive Turn-off Switching Times vs. Collector Current 600 t d(off) - Nanoseconds VCE = 480V 5.6 t f i - Nanoseconds ---- 90 540 6.4 Eon 2 t f i - Nanoseconds 0.5 RG - Ohms Eoff 14 4.0 VCE = 480V 10 50 18 16 ---- 12 2 6 Eoff - MilliJoules Eoff - MilliJoules C Eon RG = 5Ω , VGE = 15V Eon - MilliJoules I 14 Eoff 14 6 Eon - MilliJoules Eoff - MilliJoules 16 4.5 IXGH56N60A3 Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance Fig. 19. Inductive Turn-on Switching Times vs. Collector Current 240 120 100 100 tri t r i - Nanoseconds 80 I C 60 = 88A I 80 C = 44A 0 5 10 15 20 25 30 35 40 45 40 VCE = 480V 80 35 TJ = 25ºC, 125ºC 60 30 40 25 20 20 20 0 0 40 40 td(on) - - - - RG = 5Ω , VGE = 15V 50 t d(on) - Nanoseconds 160 t d(on) - Nanoseconds VCE = 480V 120 45 td(on) - - - - TJ = 125ºC, VGE = 15V t r i - Nanoseconds tri 200 120 15 20 30 40 50 60 70 80 90 IC - Amperes RG - Ohms Fig. 20. Inductive Turn-on Switching Times vs. Junction Temperature 120 40 tri 110 100 38 36 VCE = 480V I C = 88A 90 34 80 32 70 30 60 28 50 26 40 I C t d(on) - Nanoseconds t r i - Nanoseconds td(on) - - - - RG = 5Ω , VGE = 15V 24 = 44A 30 22 20 25 35 45 55 65 75 85 95 105 115 20 125 TJ - Degrees Centigrade IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. IXYS REF: G_56N60A3(65)8-04-09-C Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.