IXGH56N60B3D1

IXGH56N60B3D1 GenX3TM 600V IGBT w/ Diode VCES = = IC110 VCE(sat)  600V 56A 1.80V Medium-Speed-Low-Vsat PT IGBT 5-40kHz Switching TO-247 Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M 600 600 V V VGES VGEM Continuous Transient ±20 ±30 V V IC110 ICM TC = 110°C TC = 25°C, 1ms 56 350 A A SSOA (RBSOA) VGE = 15V, TVJ = 125°C, RG = 5 Clamped Inductive Load ICM = 150 @VCE  VCES A PC TC = 25°C 330 W -55 ... +150 150 -55 ... +150 °C °C °C 300 260 °C °C 1.13/10 Nm/lb.in. 6 g TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque Weight G C Tab E G = Gate E = Emitter C = Collector Tab = Collector Features     Optimized for Low Conduction and Switching losses Square RBSOA Anti-Parallel Ultra Fast Diode International Standard Package Advantages   High Power Density Low Gate Drive Requirement Applications  Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. VGE(th) IC 3.0 ICES VCE = VCES, VGE = 0V = 250μA, VCE = VGE 5.0 VCE = 0V, VGE = ±20V VCE(sat) IC = 44A, VGE = 15V, Note 1 TJ = 125°C © 2014 IXYS CORPORATION, All Rights Reserved  V 300 μA 2 mA TJ = 125°C IGES  1.49 1.47 ±100 nA 1.80 V V      Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts DS99940B(02/14) IXGH56N60B3D1 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 36 Cies Coes Cres Qg(on) Qge Qgc td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff IC = 44A, VCE = 10V, Note 1 VCE = 25V, VGE = 0V, f = 1MHz IC = 40A, VGE = 15V, VCE = 0.5 • VCES Inductive Load, TJ = 25°C IC = 44A, VGE = 15V VCE = 480V, RG = 5 Note 2 Inductive Load, TJ = 125°C IC = 44A, VGE = 15V VCE = 480V, RG = 5 Note 2 RthJC RthCS TO-247 (IXGH) Outline 60 S 3950 220 56 pF pF pF 138 25 47 nC nC nC 26 41 1.30 155 95 1.05 ns ns mJ ns ns mJ 335 165 2.0 26 37 2.34 220 165 2.20 ns ns mJ ns ns mJ 0.21 0.375 °C/W °C/W D A A2 A B E Q S R D2 D1 D P1 1 2 4 3 L1 C E1 L A1 C b b2 b4 e 1 - Gate 2,4 - Drain Collector 3 - Source Emitter Reverse Diode (FRED) Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. VF IF = 30A, VGE = 0V, Note 1 TJ = 150°C 1.6 IRM trr IF = 30A, VGE = 0V, -diF/dt = 100A/μs, TJ = 100°C VR = 100V TJ = 100°C IF = 1A, VGE = 0V, -diF/dt = 100A/μs, VR = 30V 100 25 RthJC Notes: 2.7 V V 4 A ns ns 0.9 °C/W 1. Pulse test, t  300μs, duty cycle, d  2%. 2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG. IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXGH56N60B3D1 Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 300 90 VGE = 15V 13V 11V 80 250 70 9V 60 IC - Amperes IC - Amperes VGE = 15V 13V 11V 50 40 7V 30 200 9V 150 100 20 7V 50 10 5V 0 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 1 2 3 4 Fig. 3. Output Characteristics @ 125ºC 6 7 8 9 10 Fig. 4. Dependence of VCE(sat) on Junction Temperature 90 1.3 VGE = 15V 13V 11V VGE = 15V 1.2 9V 70 VCE(sat) - Normalized 80 IC - Amperes 5 VCE - Volts VCE - Volts 60 50 7V 40 30 I C = 88A I C = 44A 1.1 1.0 0.9 20 0.8 5V 10 I = 22A 0.7 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 2.2 -25 0 VCE - Volts 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance 200 4.0 180 TJ = 25ºC 3.5 160 140 I 2.5 C IC - Amperes 3.0 VCE - Volts C = 88A 44A 22A 2.0 120 100 TJ = 125ºC 25ºC - 40ºC 80 60 40 1.5 20 0 1.0 5 6 7 8 9 10 11 12 13 VGE - Volts © 2014 IXYS CORPORATION, All Rights Reserved 14 15 4.0 4.5 5.0 5.5 6.0 6.5 VGE - Volts 7.0 7.5 8.0 8.5 IXGH56N60B3D1 Fig. 7. Transconductance Fig. 8. Gate Charge 16 100 TJ = - 40ºC 90 VCE = 300V 14 I C = 40A 80 I G = 10mA 60 VGE - Volts g f s - Siemens 12 25ºC 70 125ºC 50 40 10 8 6 30 4 20 2 10 0 0 0 20 40 60 80 100 120 0 140 20 40 60 80 100 120 IC - Amperes QG - NanoCoulombs Fig. 9. Capacitance Fig. 10. Reverse-Bias Safe Operating Area 140 160 10,000 120 1,000 IC - Amperes Capacitance - PicoFarads 140 Cies Coes 100 80 60 100 Cres f = 1 MHz 10 0 5 10 15 20 25 30 35 40 40 TJ = 125ºC 20 RG = 5Ω dV / dt < 10V / ns 0 100 200 VCE - Volts 300 400 500 600 VCE - Volts Fig. 11. Maximum Transient Thermal Impedance Z(th)JC - ºC / W 1.00 0.10 0.01 0.0001 0.001 0.01 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. 0.1 1 10 IXGH56N60B3D1 Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance 5.5 6.0 5.0 5.5 I C = 72A 4.5 4.5 5.0 3.5 2.5 3.0 I C = 36A 2.0 2.5 1.5 2.0 1.0 1.5 0.5 I C = 18A 0.0 5 10 15 20 25 30 35 40 45 4.0 3.5 VCE = 480V ---- 3.5 3.0 3.0 TJ = 125ºC 2.5 2.0 1.5 1.5 1.0 1.0 0.5 0.5 0.0 50 0.5 0.0 15 20 25 30 35 40 ---- 220 2.0 I C = 36A 1.5 1.5 1.0 1.0 - MilliJoules 2.0 200 on 2.5 700 180 600 I 0.5 I C = 18A 0.0 75 85 95 105 115 0.0 125 I 400 300 I C = 36A 100 200 5 10 15 20 25 30 35 40 45 50 Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature 210 260 255 tf TJ = 125ºC 190 td(off) - - - - 200 RG = 5Ω, VGE = 15V VCE = 480V 180 110 160 td(off) - - - - RG = 5Ω, VGE = 15V I C = 18A, 36A, 72A 240 VCE = 480V 170 225 150 210 130 195 110 180 TJ = 25ºC 90 70 15 20 25 30 35 40 45 50 55 60 65 IC - Amperes © 2014 IXYS CORPORATION, All Rights Reserved 70 75 140 90 120 70 I 25 35 45 55 65 75 85 C 95 TJ - Degrees Centigrade = 36A, 18A 105 115 165 150 125 t d(off) - Nanoseconds tf t d(off) - Nanoseconds 220 t f - Nanoseconds 240 170 t f - Nanoseconds = 18A RG - Ohms 210 130 C 120 Fig. 16. Inductive Turn-off Switching Times vs. Collector Current 150 = 72A 500 TJ - Degrees Centigrade 190 C 160 140 0.5 800 VCE = 480V = 72A 2.5 65 75 td(off) - - - - t f - Nanoseconds C 3.0 55 70 t d(off) - Nanoseconds I 45 65 TJ = 125ºC, VGE = 15V 3.5 3.0 35 60 900 tf 4.0 RG = 5ΩVGE = 15V 25 55 240 E Eoff - MilliJoules VCE = 480V 50 Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance 4.5 3.5 45 IC - Amperes 4.5 4.0 1.0 TJ = 25ºC Fig. 14. Inductive Swiching Energy Loss vs. Junction Temperature Eon 2.5 2.0 RG - Ohms Eoff 4.0 RG = 5ΩVGE = 15V - MilliJoules VCE = 480V Eon on 4.0 4.5 Eoff E TJ = 125ºC , VGE = 15V - MilliJoules 3.0 4.5 --- on 3.5 Eon - E Eoff Eoff - MilliJoules 4.0 Eoff - MilliJoules Fig. 13. Inductive Swiching Energy Loss vs. Collector Current IXGH56N60B3D1 Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance 150 90 TJ = 125ºC, VGE = 15V 130 75 VCE = 480V I C 60 I C = 36A, 18A 50 50 40 30 30 10 20 10 15 20 25 30 35 40 45 TJ = 25ºC, 125ºC 30 VCE = 480V 55 28 45 26 35 24 25 22 15 50 t d(on) - Nanoseconds 90 td(on) - - - - RG = 5Ω, VGE = 15V 65 t d(on) - Nanoseconds 70 70 tr 80 = 72A, 36A, 18A 110 5 32 td(on) - - - - t r - Nanoseconds tr t r - Nanoseconds Fig. 19. Inductive Turn-on Switching Times vs. Collector Current 20 15 RG - Ohms 20 25 30 35 40 45 50 55 60 65 70 75 IC - Amperes 80 34 70 32 I C = 72A 60 tr 50 30 td(on) - - - - 28 RG = 5Ω, VGE = 15V 40 26 VCE = 480V I C = 36A 30 24 20 22 I 10 25 35 45 55 65 75 C 85 t d(on) - Nanoseconds t r - Nanoseconds Fig. 20. Inductive Turn-on Switching Times vs. Junction Temperature = 18A 95 105 115 20 125 TJ - Degrees Centigrade IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. IXYS REF: G_56N60B3(65) 05-05-08-B IXGH56N60B3D1 1000 60 A 50 IF 30 TVJ = 100°C VR = 300V nC 800 Qr 30 15 400 20 10 TVJ = 25°C 200 10 0 0 1 0 100 3 V 2 5 A/s 1000 -diF /dt VF 2.0 TVJ = 100°C VR = 300V ns 1.0 0.5 40 600 A/s 800 -diF /dt 1000 Fig. 23. Peak Reverse Current IRM Versus -diF/dt 1.00 TVJ = 100°C IF = 30A s tfr 0.75 VFR 10 0.50 70 5 Qr 0 400 tfr IF = 60A IF = 30A IF = 15A 80 IRM 200 V V FR 15 trr Kf 0 20 90 1.5 0 Fig. 22. Reverse Recovery Charge Qr Versus -diF/dt Fig. 21. Forward Current IF Versus VF 0.0 IF= 60A IF= 30A IF= 15A 20 IF= 60A IF= 30A IF= 15A 600 TVJ =100°C 25 IRM 40 TVJ =150°C TVJ= 100°C VR = 300V A 80 120 °C 160 60 0 200 T VJ 400 600 800 A/s 1000 0 0.25 0 200 400 -diF /dt Fig. 24. Dynamic Parameters Qr, IRM Versus TVJ Fig. 25. Recovery Time trr Versus -diF/dt 0.00 600 A/s 800 1000 diF /dt Fig. 26. Peak Forward Voltage VFR and tfr Versus diF/dt 1 K/W Constants for ZthJC calculation: i 0.1 Z thJC 1 2 3 0.01 0.001 0.00001 DSEP 29-06 0.0001 0.001 0.01 Fig. 27. Transient Thermal Resistance Junction to Case © 2014 IXYS CORPORATION, All Rights Reserved 0.1 t s 1 Rthi (K/W) ti (s) 0.502 0.193 0.205 0.0052 0.0003 0.0162 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. 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