IXGH64N60B3

Preliminary Technical Information GenX3TM 600V IGBT VCES = 600V IC110 = 64A VCE(sat) ≤ 1.8V IXGH64N60B3* IXGT64N60B3 *Obsolete Part Number Medium speed low Vsat PT IGBTs for 5 - 40kHz switching tfi(typ) = 88ns Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V VGES Continuous ± 20 V VGEM Transient ± 30 V IC110 TC = 110°C 64 A ICM TC = 25°C, 1ms 400 A SSOA VGE = 15V, TVJ = 125°C, RG = 3Ω ICM = 200 A (RBSOA) Clamped inductive load @ ≤ 600V PC TC = 25°C 460 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C 300 260 °C °C 1.13/10 Nm/lb.in. 6 5 g g TJ TL TSOLD 1.6mm (0.062 in.) from case for 10s Plastic body for 10 seconds Md Mounting torque (TO-247) Weight TO-247 TO-268 TO-247 (IXGH) G C C (TAB) E TO-268 (IXGT) G E C (TAB) G = Gate E = Emitter C = Collector TAB = Collector Features z z z Optimized for low conduction and switching losses Square RBSOA International standard packages Advantages z z Symbol Test Conditions (TJ = 25°C unless otherwise specified) BVCES Characteristic Values Min. Typ. Max. IC = 250μA, VGE = 0V VGE(th) IC = 250μA, VCE = VGE ICES VCE = VCES VGE = 0V IGES VCE = 0V, VGE = ± 20V VCE(sat) IC = 50A, VGE = 15V, Note 1 600 3.0 TJ = 125°C © 2008 IXYS CORPORATION, All rights reserved 1.59 High power density Low gate drive requirement Applications V z 5.0 V z 50 μA 500 μA ±100 nA 1.80 V z z z z z z Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts DS99971(04/08) IXGH64N60B3 IXGT64N60B3 Symbol Test Conditions (TJ = 25°C unless otherwise specified) Characteristic Values Min. Typ. Max. gfS 38 IC = 50A, VCE = 10V, Note 1 TO-247 (IXGH) Outline 64 S 4750 pF 260 pF Cres 65 pF Qg 168 nC 28 nC Qgc 61 nC td(on) 25 ns 41 ns 1.5 mJ 138 ns Cies Coes Qge tri Eon td(off) tfi VCE = 25V, VGE = 0V, f = 1MHz IC = 50A, VGE = 15V, VCE = 0.5 • VCES Inductive load, TJ = 25°C IC = 50A, VGE = 15V VCE = 480V, RG = 3Ω 88 150 ns Eoff 1.0 1.9 mJ td(on) 24 ns 40 ns 2.70 mJ 195 ns tfi 131 ns Eoff 1.95 mJ tri Inductive load, TJ = 125°C Eon IC = 50A, VGE = 15V td(off) VCE = 480V, RG = 3Ω RthJC 0.27 °C/W RthCS 0.15 1 2 ∅P 3 e Terminals: 1 - Gate 3 - Source Dim. Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 2.2 2.6 A2 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC 2 - Drain Tab - Drain Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC TO-268 (IXGT) Outline °C/W Note 1: Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXGH64N60B3 IXGT64N60B3 Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 100 300 VGE = 15V 11V 90 250 80 70 9V IC - Amperes IC - Amperes VGE = 15V 13V 11V 60 50 7V 40 200 9V 150 100 30 7V 20 50 10 5V 0 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 2.2 1 2 100 5 6 1.25 VGE = 15V 11V 90 VGE = 15V 1.20 80 1.15 VCE(sat) - Normalized 9V 70 IC - Amperes 4 Fig. 4. Dependence of VCE(sat) on Junction Temperature Fig. 3. Output Characteristics @ 125ºC 60 7V 50 40 30 20 I C = 100A 1.10 1.05 I 1.00 C = 50A 0.95 0.90 I 0.85 5V 10 C = 25A 0.80 0 0.75 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 -50 -25 0 VCE - Volts 25 50 75 100 125 150 8.0 8.5 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance 200 3.6 3.4 180 TJ = 25ºC 3.2 160 3.0 140 IC - Amperes VCE - Volts 3 VCE - Volts VCE - Volts 2.8 2.6 I C 2.4 = 100A 50A 25A 120 TJ = 125ºC 25ºC - 40ºC 100 80 2.2 60 2.0 40 1.8 20 1.6 1.4 0 5 6 7 8 9 10 11 12 VGE - Volts © 2008 IXYS CORPORATION, All rights reserved 13 14 15 4.0 4.5 5.0 5.5 6.0 6.5 VGE - Volts 7.0 7.5 IXGH64N60B3 IXGT64N60B3 Fig. 7. Transconductance Fig. 8. Gate Charge 110 16 TJ = - 40ºC 100 VCE = 300V 14 I C = 50A 90 25ºC 70 60 VGE - Volts g f s - Siemens I G = 10 mA 12 80 125ºC 50 10 8 6 40 30 4 20 2 10 0 0 0 20 40 60 80 100 120 140 160 180 200 0 20 40 IC - Amperes 60 80 100 120 140 160 180 35 40 QG - NanoCoulombs Fig. 10. Capacitance Fig. 9. Reverse-Bias Safe Operating Area 10,000 220 200 Capacitance - PicoFarads 180 IC - Amperes 160 140 120 100 80 60 40 20 0 100 TJ = 125ºC Cies 1,000 Coes 100 Cres RG = 3Ω dV / dt < 10V / ns f = 1 MHz 10 200 300 400 500 600 0 5 10 15 20 25 30 VCE - Volts VCE - Volts Fig. 11. Maximum Transient Thermal Impedance Z(th)JC - ºC / W 1.00 0.10 0.01 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions and dimensions. IXYS REF: G_64N60B3(75) 4-09-08-A IXGH64N60B3 IXGT64N60B3 Fig. 13. Inductive Switching Energy Loss vs. Junction Temperature Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance 6 7 C 6 5 2 3 1 2 0 4.5 VCE = 480V 4.0 3.0 3.5 2.5 3.0 I C = 42A 2.0 5 10 15 20 25 30 1.5 2.0 1.0 1.5 1.0 I C = 21A 25 35 35 45 55 RG - Ohms ---- RG = 3Ω , VGE = 15V TJ = 125ºC VCE = 480V 2.0 2.5 1.5 2.0 TJ = 25ºC 1.0 1.5 0.5 1.0 0.0 0.5 -0.5 - MilliJoules 3.0 35 40 45 50 55 60 65 70 75 80 td(off) - - - - TJ = 125ºC, VGE = 15V 600 500 130 I I 100 0 5 10 145 90 80 130 I C = 21A 60 35 45 55 65 75 85 35 210 TJ = 125ºC 95 105 TJ - Degrees Centigrade © 2008 IXYS CORPORATION, All rights reserved 115 115 125 200 190 tf 150 t f - Nanoseconds t f - Nanoseconds 100 - Nanoseconds 110 25 30 160 d(off) 160 = 42A, 84A 70 25 180 190 130 C 20 170 175 I 15 Fig. 17. Inductive Turn-off Switching Times vs. Collector Current td(off) - - - - 140 120 200 = 21A td(off) - - - - 180 RG = 3Ω , VGE = 15V 140 170 VCE = 480V 130 160 120 150 TJ = 25ºC 110 140 100 130 90 120 80 110 70 100 20 25 30 35 40 45 50 55 60 IC - Amperes 65 70 75 80 85 t d(off) - Nanoseconds VCE = 480V C 100 85 t 150 400 = 42A 300 110 205 RG = 3Ω , VGE = 15V C RG - Ohms 180 160 = 21A, 42A, 84A 140 Fig. 16. Inductive Turn-off Switching Times vs. Junction Temperature tf C VCE = 480V 150 IC - Amperes 170 700 I 120 0.0 30 0.0 125 800 tf 160 on 3.5 2.5 25 115 170 4.0 3.0 20 105 t d(off) - Nanoseconds 3.5 95 900 4.5 t f - Nanoseconds 4.0 85 180 5.0 E Eoff - MilliJoules 5.5 Eon 75 Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance 5.0 Eoff 65 0.5 TJ - Degrees Centigrade Fig. 14. Inductive Switching Energy Loss vs. Collector Current 4.5 2.5 -0.5 0 0 5.0 3.5 0.0 -1 = 84A 0.5 1 I C = 21A C - MilliJoules I C = 42A I on VCE = 480V - MilliJoules 4 ---- E --- TJ = 125ºC , VGE = 15V on Eon - Eoff Eon RG = 3Ω , VGE = 15V 4.0 E Eoff - MilliJoules 4 3 5.5 Eoff 4.5 = 84A Eoff - MilliJoules I 5 5.0 IXGH64N60B3 IXGT64N60B3 Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance 130 80 tr td(on) - - - - 110 TJ = 125ºC, VGE = 15V I C = 84A 55 70 50 C 45 = 42A 50 40 40 35 30 30 20 I C 70 10 5 10 15 20 25 30 RG = 3Ω 60 28 td(on) - - - - 27 VGE = 15V VCE = 480V 50 26 I C = 42A 40 25 30 24 20 23 22 I 20 0 tr 10 25 = 21A 29 I C = 84A C = 21A 0 35 25 RG - Ohms t d(on) - Nanoseconds 60 80 I 80 t d(on) - Nanoseconds 65 90 60 30 70 VCE = 480V 100 90 75 t r - Nanoseconds 120 t r - Nanoseconds Fig. 19. Inductive Turn-on Switching Times vs. Junction Temperature 35 45 55 65 75 85 95 105 115 21 125 TJ - Degrees Centigrade Fig. 20. Inductive Turn-on Switching Times vs. Collector Current 32 70 tr td(on) - - - - 31 65 RG = 3Ω , VGE = 15V 30 60 VCE = 480V 25ºC < TJ < 125ºC 29 55 28 50 27 45 26 40 25 35 24 30 23 25 22 20 21 15 t d(on) - Nanoseconds t r - Nanoseconds 75 20 20 25 30 35 40 45 50 55 60 65 70 75 80 85 IC - Amperes IXYS reserves the right to change limits, test conditions and dimensions. IXYS REF: G_64N60B3(75) 4-09-08-A Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.