IXGH6N170A

High Voltage IGBT IXGT6N170A IXGH6N170A VCES = IC25 = VCE(sat)  tfi(typ) = 1700V 6A 7.0V 32ns TO-268 (IXGT) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C, RGE = 1M 1700 V VGES Continuous ± 20 V VGEM Transient ± 30 V IC25 TC = 25°C 6 A IC110 TC = 110°C 3 A ICM TC = 25°C, 1ms 14 A SSOA VGE = 15V, TVJ = 125°C, RG = 33 ICM = 12 A (RBSOA) Clamped Inductive Load tSC TJ = 125C, VCE = 1200 V, VGE = 15 V, RG = 33 10s PC TC = 25°C 75 W - 55 ... +150 C G @ 0.8 • VCES TJ TJM 150 C Tstg - 55 ... +150 C 300 260 °C °C 1.13/10 Nm/lb.in. 4 6 g g TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque (TO-247) Weight TO-268 TO-247 E C (Tab) TO-247 (IXGH) G Characteristic Values Min. Typ. Max. BVCES IC = 250A, VGE = 0V 1700 VGE(th) IC = 250A, VCE = VGE 3.0 ICES VCE = 0.8 • VCES, VGE = 0V IGES VCE = 0V, VGE = ± 20V VCE(sat) IC = IC110, VGE = 15V, Note 1 TJ = 125°C 5.0 TJ = 125°C   © 2015 IXYS CORPORATION, All Rights Reserved International Standard Packages High Voltage Package Advantages High Power Density Low Gate Drive Requirement V Applications V  μA μA ±100 nA 7.0 V C = Collector Tab = Collector Features  10 500 C (Tab) E G = Gate E = Emitter  Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) C      Power Inverters UPS Motor Drives SMPS PFC Circuits Welding Machines 5.4 DS98990C(9/15) IXGH6N170A IXGT6N170A Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) gfs IC = 6A, VCE = 20V, Note 1 Cies Coes Cres Characteristic Values Min. Typ. Max. 2.0 3.5 S VCE = 25V, VGE = 0V, f = 1MHz 390 20 7 pF pF pF IC = 6A, VGE = 15V, VCE = 0.5 • VCES 18.5 2.8 8.2 nC nC nC 46 ns 40 0.59 ns mJ Qg Qge Qgc td(on) tri Eon Inductive load, TJ = 25°C IC = 6A, VGE = 15V td(off) VCE = 0.5 • VCES, RG = 33 tfi Note 2 Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCK TO-268 Outline Inductive load, TJ = 125°C IC = 6A, VGE = 15V VCE = 0.5 • VCES, RG = 33 Note 2 TO-247 220 400 ns 32 65 ns 0.18 0.36 mJ 48 43 0.62 230 41 0.25 ns ns mJ ns ns mJ 0.21 1.65 °C/W °C/W Terminals: 1 - Gate 3 - Emitter TO-247 Outline 1 Notes: 2,4 - Collector 2 P 3 1. Pulse test, t  300μs, duty cycle, d  2%. 2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG. e Terminals: 1 - Gate 3 - Emitter Dim. Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC 2 - Collector Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXGH6N170A IXGT6N170A Fig. 1. Output Characteristics @ TJ = 25ºC 12 VGE = 15V 13V 11V 10 Fig. 2. Extended Output Characteristics @ TJ = 25ºC 24 VGE = 15V 20 13V 16 I C - Amperes I C - Amperes 8 9V 6 4 7V 2 11V 12 9V 8 7V 4 5V 0 0 0 2 4 6 8 10 12 0 5 10 15 VCE - Volts Fig. 3. Output Characteristics @ TJ = 125ºC 12 1.8 30 VGE = 15V I C = 12A VCE(sat) - Normalized 1.6 8 I C - Amperes 25 Fig. 4. Dependence of VCE(sat) on Junction Temperature 2.0 VGE = 15V 13V 11V 10 20 VCE - Volts 9V 6 4 7V 1.4 1.2 I C = 6A 1.0 0.8 2 I C = 3A 0.6 5V 0.4 0 0 2 4 6 8 10 12 -50 14 -25 0 VCE - Volts Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage 18 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 6. Input Admittance 12 TJ = 25ºC 16 10 14 I C - Amperes VCE - Volts 8 I C = 12A 12 10 8 6 4 TJ = 125ºC 25ºC - 40ºC 6A 2 6 3A 4 0 6 8 10 12 14 16 VGE - Volts © 2015 IXYS CORPORATION, All Rights Reserved 18 20 4.0 4.5 5.0 5.5 6.0 6.5 7.0 VGE - Volts 7.5 8.0 8.5 9.0 9.5 IXGH6N170A IXGT6N170A Fig. 8. Gate Charge Fig. 7. Transconductance 5 16 TJ = - 40ºC VCE = 850V 14 I C = 6A 3 25ºC 12 125ºC 10 VGE - Volts g f s - Siemens 4 2 I G = 10mA 8 6 4 1 2 0 0 0 2 4 6 8 10 12 0 2 4 6 I C - Amperes 8 10 12 14 16 18 20 QG - NanoCoulombs Fig. 9. Reverse-Bias Safe Operating Area Fig. 10. Capacitance 1,000 Capacitance - PicoFarads 12 10 I C - Amperes 8 6 4 TJ = 125ºC 100 C oes 10 Cres RG = 33Ω dv / dt < 10V / ns 2 f = 1 MHz 0 1 200 400 600 800 1000 1200 1400 1600 1800 VCE - Volts Fig. 11. Forward-Bias Safe Operating Area VCE(sat) Limit 10 25µs 1 100µs 1ms 0.1 TJ = 150ºC TC = 25ºC Single Pulse 10ms 0.01 1 10 100 0 5 10 15 20 VCE - Volts 100 I D - Amperes C ies 1000 10000 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 25 30 35 40 IXGH6N170A IXGT6N170A 0.8 Eoff Eon - --- TJ = 125ºC , VGE = 15V VCE = 850V 0.6 0.7 3.0 0.6 2.5 0.5 0.5 2.0 0.4 1.5 0.3 I C = 6A 0.2 0.1 30 40 50 60 70 80 90 100 110 Fig. 13. Inductive Switching Energy Loss vs. Collector Current Eoff Eon ---- VCE = 850V 0.4 2.5 Eoff Eon 2.0 TJ = 125ºC, 25ºC 0.3 1.5 1.0 0.2 1.0 0.5 0.1 0.5 0.0 120 0 0.0 6 7 8 9 10 11 12 I C - Amperes Fig. 14. Inductive Switching Energy Loss vs. Junction Temperature 0.7 3.0 RG = 33ΩVGE = 15V RG - Ohms 0.8 3.5 Eon - MilliJoules I C = 12A Eon - MilliJoules Eo f f - MilliJoules 0.7 3.5 Eo f f - MilliJoules Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance ---- Fig. 15. Maximum Transient Thermal Impedance 2.00 10 1.75 RG = 33ΩVGE = 15V VCE = 850V 1.25 I C = 12A 0.4 1.00 0.3 0.75 Z (th)JC - ºC / W 0.5 1.50 Eon - MilliJoules Eo f f - MilliJoules 0.6 1 0.1 I C = 6A 0.2 0.50 0.1 25 35 45 55 65 75 85 95 105 115 0.25 125 0.01 0.00001 0.0001 0.001 TJ - Degrees Centigrade 0.01 0.1 1 10 Pulse Width - Seconds Fig. 16. Cauer Thermal Network i 1 2 3 © 2015 IXYS CORPORATION, All Rights Reserved Ri (°C/W) 0.11615 0.29930 0.26377 Ci (J/°C) 0.0019257 0.0016574 0.0262960 IXYS REF: G_6N170A (2N) 9-23-15-B Disclaimer Notice - Information furnished is believed to be accurate and reliable. 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