IXGH72N60C3

GenX3TM 600V IGBT IXGH72N60C3* VCES IC110 VCE(sat) tfi (typ) *Obsolete Part Number High-Speed PT IGBT for 40-100kHz Switching VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ 600 600 VGES Continuous ±20 VGEM Transient ±30 IC25 IC110 ICM TC = 25°C (Limited by Leads) TC = 110°C (Chip Capability) TC = 25°C, 1ms 75 72 360 IA EAS TC = 25°C TC = 25°C SSOA (RBSOA) VGE = 15V, TVJ = 125°C, RG = 2Ω Clamped Inductive Load PC TC = 25°C Md Mounting Torque Weight Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) -55 ... +150 150 -55 ... +150 °C °C °C 300 260 °C °C 1.13/10 Nm/lb.in. 6 g C E G = Gate E = Emitter z z z z 3.0 ICES VCE = VCES, VGE = 0V V 5.5 TJ = 125°C © 2009 IXYS CORPORATION, All Rights Reserved V 50 μA 1 mA TJ = 125°C 2.10 1.65 Optimized for Low Switching Losses Square RBSOA Avalanche Rated International Standard Package Advantages z z = 250μA, VCE = VGE C = Collector Tab = Collector High Power Density Low Gate Drive Requirement Applications Characteristic Values Min. Typ. Max. IC Tab Features z VGE(th) = 50A, VGE = 15V A mJ W 600 IC A A A 540 = 250μA, VGE = 0V VCE(sat) G V A IC VCE = 0V, VGE = ±20V V ICM = 150 VCE ≤ VCES BVCES IGES TO-247 AD ol Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s O TL TSOLD 600V 72A 2.5V 55ns V V 50 500 bs TJ TJM Tstg Maximum Ratings e Test Conditions et Symbol = = ≤ = ±100 nA 2.50 V V z z z z z z z High Frequency Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts DS99961B(11/09) IXGH72N60C3 Characteristic Values Min. Typ. Max. gfs IC Cies Coes Cres VCE = 25V, VGE = 0V, f = 1MHz Qg Qge Qgc IC = 50A, VGE = 15V, VCE = 0.5 • VCES td(on) tri Eon td(off) tfi Eoff Inductive Load, TJ = 25°°C IC = 50A, VGE = 15V VCE = 480V, RG = 2Ω, Note 2 55 S 4780 330 117 pF pF pF 174 33 72 nC nC nC 27 37 1.03 77 55 0.48 ns ns mJ ns ns mJ 26 36 1.48 120 124 0.93 Inductive Load, TJ = 125°°C IC = 50A, VGE = 15V VCE = 480V, RG = 2Ω, Note 2 130 110 0.95 1 e Dim. ns ns mJ ns ns mJ 0.23 °C/W °C/W ∅P 3 Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC 2 - Collector Tab - Collector Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC bs 0.21 2 Terminals: 1 - Gate 3 - Emitter ol RthJC RthCK 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. 2. Switching times & energy losses may increase for higher VCE(Clamp), TJ or RG. O Notes: 33 et td(on) tri Eon td(off) tfi Eoff = 50A, VCE = 10V, Note 1 TO-247 (IXGH) Outline e Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXGH72N60C3 Fig. 1. Output Characteristics @ T J = 25ºC Fig. 2. Extended Output Characteristics @ T J = 25ºC 100 350 VGE = 15V 13V 11V 90 80 11V 9V 250 IC - Amperes 70 IC - Amperes VGE = 15V 13V 300 60 50 7V 40 30 200 9V 150 100 20 7V 50 10 5V 5V 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 0 VCE - Volts 4 8 10 12 14 et Fig. 4. Dependence of VCE(sat) on JunctionTemperature 1.3 100 VGE = 15V 13V 11V 90 80 VGE = 15V 1.2 1.1 ol VCE(sat) - Normalized 9V 70 60 50 7V 40 bs 30 20 5V 10 0 0.0 0.4 0.8 1.2 1.6 2.0 0.9 O 4.5 C C = 50A I C = 25A 0.6 0.5 0 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 6. Input Admittance 100 TJ = 25ºC 90 80 TJ = 125ºC 25ºC - 40ºC 70 = 100A 50A 25A IC - Amperes I I 0.7 2.4 4.0 3.5 = 100A C 0.8 Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage 5.0 I 1.0 VCE - Volts VCE - Volts 6 VCE - Volts Fig. 3. Output Characteristics @ T J = 125ºC IC - Amperes 2 e 0.0 0 3.0 60 50 40 30 2.5 20 2.0 10 1.5 0 6 7 8 9 10 11 12 VGE - Volts © 2009 IXYS CORPORATION, All Rights Reserved 13 14 15 4.0 4.5 5.0 5.5 6.0 VGE - Volts 6.5 7.0 7.5 8.0 IXGH72N60C3 Fig. 8. Gate Charge Fig. 7. Transconductance 16 90 TJ = - 40ºC 80 70 60 VGE - Volts 125ºC 50 I C = 50A I G = 10mA 12 25ºC g f s - Siemens VCE = 300V 14 40 30 10 8 6 4 20 2 10 0 0 0 10 20 30 40 50 60 70 80 90 0 100 20 40 60 80 100 120 140 160 180 QG - NanoCoulombs e IC - Amperes Fig. 10. Reverse-Bias Safe Operating Area et Fig. 9. Capacitance 160 10,000 140 Capacitance - PicoFarads Cies 120 100 ol IC - Amperes 1,000 Coes 100 Cres 10 0 5 10 15 20 25 60 40 bs f = 1 MHz 80 30 35 40 TJ = 125ºC , RG = 2Ω dv / dt < 10V / ns 20 0 100 200 300 Z (th)JC - ºC / W 1.00 O VCE - Volts 400 500 600 VCE - Volts Fig. 11. Maximum Transient Thermal Impedance 0.10 0.01 0.00001 0.0001 0.001 0.01 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.1 1 10 IXGH72N60C3 Fig. 13. Inductive Switching Energy Loss vs. Collector Current Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance 5.0 Eoff 4.5 Eon - --- 5.5 TJ = 125ºC , VGE = 15V 4.0 5.6 Eoff 2.4 VCE = 480V I C 4.0 = 100A 2.5 3.5 2.0 3.0 1.5 2.5 I C = 50A 1.0 Eoff - MilliJoules 3.0 4.0 1.6 3.2 1.2 2.4 TJ = 125ºC, 25ºC 0.8 1.6 0.4 0.8 2.0 0.5 1.5 0.0 0.0 1.0 3 4 5 6 7 8 9 10 11 12 13 14 20 15 RG - Ohms 4.8 RG = 2Ω , VGE = 15V 3.2 I C = 100A 1.5 2.4 bs 1.6 I C = 50A 0.5 0.0 35 Eon - MilliJoules 2.0 25 180 tf 45 55 65 75 170 TJ = 125ºC, VGE = 15V 85 95 105 115 0.8 0.0 125 O VCE = 480V 140 C 120 100 110 80 100 60 90 TJ = 25ºC 40 80 20 20 30 40 50 60 70 80 IC - Amperes © 2009 IXYS CORPORATION, All Rights Reserved 90 70 100 = 100A 250 130 200 I 120 C = 50A 150 110 100 100 50 90 0 2 3 4 5 6 7 8 9 10 11 12 13 14 15 RG - Ohms Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature 125 tf td(off) - - - - 115 RG = 2Ω , VGE = 15V VCE = 480V 120 105 100 95 I C = 100A I C = 50A 80 60 85 75 40 25 35 45 55 65 75 85 TJ - Degrees Centigrade 95 105 115 65 125 t d(off) - Nanoseconds TJ = 125ºC 350 300 I 140 130 120 400 150 140 t d(off) - Nanoseconds t f - Nanoseconds 140 RG = 2Ω , VGE = 15V t f - Nanoseconds 160 450 160 150 td(off) - - - - 500 160 Fig. 16. Inductive Turn-off Switching Times vs. Collector Current tf 0.0 100 VCE = 480V TJ - Degrees Centigrade 180 90 td(off) - - - - ol 4.0 1.0 80 et ---- t f - Nanoseconds VCE = 480V 70 t d(off) - Nanoseconds 2.5 60 190 5.6 Eon 50 Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance 3.5 Eoff 40 IC - Amperes Fig. 14. Inductive Switching Energy Loss vs. Junction Temperature 3.0 30 e 2 E off - MilliJoules 4.8 VCE = 480V 2.0 4.5 ---- Eon - MilliJoules 3.5 Eon RG = 2Ω , VGE = 15V 5.0 E on - MilliJoules E off - MilliJoules 2.8 6.0 IXGH72N60C3 Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance Fig. 19. Inductive Turn-on Switching Times vs. Collector Current 160 60 C 50 = 100A 100 45 80 40 60 35 I C 30 = 50A 20 25 3 4 5 6 7 8 9 10 11 12 13 14 80 32 70 30 TJ = 25ºC, 125ºC 60 28 50 26 40 24 30 22 20 20 10 20 15 30 40 50 60 70 80 90 18 100 IC - Amperes Fig. 20. Inductive Turn-on Switching Times vs. Junction Temperature 120 et RG - Ohms 35 110 tr 100 RG = 2Ω , VGE = 15V td(on) - - - - 34 33 VCE = 480V 80 32 ol 90 31 I C = 100A 70 30 60 29 28 bs 50 40 t d(on) - Nanoseconds t r - Nanoseconds 34 VCE = 480V e 2 36 td(on) - - - - RG = 2Ω , VGE = 15V t d(on) - Nanoseconds I 40 tr 90 VCE = 480V 120 38 100 55 t d(on) - Nanoseconds t r - Nanoseconds td(on) - - - - TJ = 125ºC, VGE = 15V t r - Nanoseconds tr 140 110 27 30 I 20 25 35 45 C 26 = 50A 55 65 75 85 95 105 115 25 125 O TJ - Degrees Centigrade IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: G_72N60C3(8D)11-25-09-C e et ol bs O Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.