IXGH85N30C3

Preliminary Technical Information IXGH85N30C3* GenX3TM 300V IGBT VCES IC110 VCE(sat) tfi typ *Obsolete Part Number High Speed PT IGBTs for 50-150kHz switching VCES TJ = 25°C to 150°C 300 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 300 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C (limited by leads) 75 IC110 TC = 110°C (chip capability) 85 ICM TC = 25°C, 1ms IA TC = 25°C EAS TC = 25°C SSOA (RBSOA) VGE = 15V, TVJ = 125°C, RG = 3.3Ω Clamped inductive load @ ≤ 300V PC TC = 25°C Weight Symbol Test Conditions IC IC ICES VCE = VCES VGE = 0V VCE = 0V, VGE = ±20V VCE(sat) IC E (TAB) C = Collector, TAB = Collector et 85 A mJ ICM = 170 A Features z z z 333 W z -55 ... +150 °C z 150 °C -55 ... +150 °C 300 260 °C °C 1.13/10 Nm/lb.in. 6 g z z z z Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. TJ = 125°C = 85A, VGE = 15V TJ = 125°C 1.64 1.67 5.0 V V 30 750 µA µA ±100 nA 1.9 V V High Frequency IGBT Square RBSOA High avalanche capability Drive simplicity with MOS Gate Turn-On High current handling capability Applications z 300 2.5 © 2007 IXYS CORPORATION, All rights reserved C G = Gate, E = Emitter, z = 250µA, VGE = 0V = 250µA, VCE = VGE IGES G A ol Mounting torque (TO-247) BVCES VGE(th) A 400 Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10s O Md A 420 bs Tstg TL TSOLD Maximum Ratings e Test Conditions TJ 300V 85A 1.9V 70ns TO-247 AD (IXGH) Symbol TJM = = ≤ = z PFC Circuits PDP Systems Switched-mode and resonant-mode converters and inverters SMPS AC motor speed control DC servo and robot drives DC choppers DS99883A(01-08) IXGH85N30C3 Symbol Test Conditions (TJ = 25°C, unless otherwise specified) gfs IC Min. = 0.5 • IC110, VCE = 10V, Characteristic Values Typ. Max. 35 60 S 5100 pF 310 pF 80 pF 136 nC 22 nC TO-247 AD Outline Pulse test, t ≤ 300µs; duty cycle, d ≤ 2%. ∅P Cies Coes VCE = 25V, VGE = 0V, f = 1MHz Cres Qg Qge IC = IC110, VGE = 15V, VCE = 0.5 • VCES 48 nC td(on) 25 ns 34 ns Eon td(off) tfi Inductive Load, TJ = 25°°C 0.20 IC = 0.5 • IC110, VGE = 15V 100 VCE = 200V, RG = 3.3Ω 70 Eoff td(off) tfi 22 Inductive Load, TJ = 125°°C IC = 0.5 • IC110, VGE = 15V VCE = 200V, RG = 3.3Ω ns 33 ns mJ 120 ns 101 ns 0.48 mJ Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC 0.375 °C/W 0.21 °C/W O RthCK mJ 0.36 bs Eoff RthJC 0.75 ol Eon ns ns 0.39 td(on) tri mJ 160 et tri Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC e Qgc e Dim. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXGH85N30C3 Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 180 350 VGE = 15V 13V 11V 160 VGE = 15V 13V 11V 300 250 9V 120 IC - Amperes IC - Amperes 140 100 80 7V 60 200 9V 150 100 40 7V 50 20 5V 5V 0 0 0.4 0.8 1.2 1.6 2 2.4 0 2 3 Fig. 3. Output Characteristics @ 125ºC 7 8 9 10 et VGE = 15V 9V 120 100 80 7V bs 60 40 20 0 0.4 0.8 1.2 1.6 2 2.4 = 170A I C = 85A I C = 43A 1.2 1.1 1.0 0.8 0.7 2.8 -50 -25 0 VCE - Volts O C 0.9 5V 0 I 1.3 ol VCE(sat) - Normalized 1.4 140 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance 180 TJ = 25ºC 160 140 4.0 3.5 C = 170A 85A 43A IC - Amperes I VCE - Volts 6 1.5 VGE = 15V 13V 11V 160 4.5 5 Fig. 4. Dependence of VCE(sat) on Junction Temperature 180 5.0 4 VCE - Volts VCE - Volts IC - Amperes 1 e 0 3.0 2.5 120 TJ = - 40ºC 25ºC 125ºC 100 80 60 2.0 40 1.5 20 1.0 0 6 7 8 9 10 11 12 VGE - Volts © 2007 IXYS CORPORATION, All rights reserved 13 14 15 3.5 4 4.5 5 5.5 6 VGE - Volts 6.5 7 7.5 8 IXGH85N30C3 Fig. 7. Transconductance Fig. 8. Gate Charge 100 16 90 80 TJ = - 40ºC 25ºC 125ºC I C = 85A I G = 10 mA 12 VGE - Volts 70 g f s - Siemens VCE = 150V 14 60 50 40 10 8 6 30 4 20 2 10 0 0 20 40 60 80 100 120 140 160 180 0 20 40 60 80 e 0 100 120 140 QG - NanoCoulombs et IC - Amperes Fig. 9. Capacitance Fig. 10. Reverse-Bias Safe Operating Area 180 10,000 1,000 IC - Amperes ol 140 Coes 120 100 80 60 100 bs Capacitance - PicoFarads 160 Cies Cres f = 1 MHz 10 0 5 10 15 20 25 30 35 40 TJ = 125ºC 40 RG = 3.3Ω dV / dT < 10V / ns 20 0 50 100 150 200 250 300 VCE - Volts O VCE - Volts Fig. 11. Maximum Transient Thermal Impedance Z(th)JC - ºC / W 1.00 0.10 0.01 0.0001 0.001 0.01 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. 0.1 1 10 IXGH85N30C3 Fig. 13. Inductive Swiching Energy Loss vs. Collector Current Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance 1.3 2.4 Eoff 2.2 TJ = 125ºC , VGE = 15V 2.0 VCE = 200V --1.1 C 0.9 1.2 0.5 1.0 - MilliJoules 0.7 1.4 Eoff 1.6 RG = 3.3Ω , VGE = 15V Eon 0.9 ---- 0.8 VCE = 200V 1.4 0.7 1.2 0.6 TJ = 125ºC 1.0 0.5 TJ = 25ºC 0.8 0.4 0.6 0.3 0.4 0.2 0.2 0.1 - MilliJoules on 1.6 1.8 on 1.8 = 85A 1.0 E I Eoff - MilliJoules Eon - 2.0 E Eoff - MilliJoules 2.6 0.8 0.6 0.3 I C = 42.5A 0.4 0.0 0.1 2 4 6 8 10 12 14 16 0.0 e 0.2 20 18 RG - Ohms 30 40 50 60 70 80 90 IC - Amperes Fig. 14. Inductive Swiching Energy Loss vs. Junction Temperature et Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance 2.0 160 1.0 1.8 380 0.9 150 I C = 85A ol ---- 1.0 0.5 VCE = 200V 0.4 bs 0.8 - MilliJoules 0.6 RG = 3.3Ω , VGE = 15V on 1.2 Eon t f - Nanoseconds 0.7 Eoff 0.6 0.3 0.4 I C = 85A 140 300 td(off) - - - TJ = 125ºC, VGE = 15V VCE = 200V tf 130 260 I 120 C = 42.5A 220 110 180 100 140 t d(off) - Nanoseconds 1.4 0.2 I C = 42.5A 0.2 0.1 0.0 25 35 45 55 65 75 85 95 105 115 0.0 125 90 100 2 4 6 8 O 150 130 14 16 180 td(off) - - - - tf 12 18 Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature Fig. 16. Inductive Turn-off Switching Times vs. Collector Current 170 10 RG - Ohms TJ - Degrees Centigrade 125 170 125 RG = 3.3Ω , VGE = 15V 115 90 110 70 105 TJ = 25ºC 50 100 30 95 150 t f - Nanoseconds 110 120 RG = 3.3Ω , VGE = 15V VCE = 200V 140 115 130 120 110 I C = 85A 110 I C = 42.5A 100 105 90 80 100 70 15 25 35 45 55 65 IC - Amperes © 2007 IXYS CORPORATION, All rights reserved 75 85 60 25 35 45 55 65 75 85 95 TJ - Degrees Centigrade 105 115 95 125 t d(off) - Nanoseconds 120 TJ = 125ºC t d(off) - Nanoseconds 130 td(off) - - - - tf 160 VCE = 200V t f - Nanoseconds 340 0.8 E Eoff - MilliJoules 1.6 IXGH85N30C3 Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance Fig. 19. Inductive Turn-on Switching Times vs. Collector Current 110 tr 100 TJ = 125ºC, VGE = 15V td(on) - - - 45 = 85A 35 60 50 30 40 I C = 42.5A 20 28 50 26 40 24 30 22 TJ = 125ºC 20 20 2 4 6 8 10 12 14 16 20 10 18 e 0 30 60 25 10 TJ = 25ºC VCE = 200V 70 18 20 RG - Ohms t d(on) - Nanoseconds 70 t d(on) - Nanoseconds 40 80 32 RG = 3.3Ω , VGE = 15V t r - Nanoseconds C 30 25 30 35 40 45 50 55 60 65 70 75 80 85 80 et IC - Amperes Fig. 20. Inductive Turn-on Switching Times vs. Junction Temperature 32 75 31 I C = 85A td(on) - - - - tr RG = 3.3Ω , VGE = 15V 60 30 28 VCE = 200V 55 29 27 50 26 45 25 24 35 bs 40 23 30 I C = 42.5A 25 t d(on) - Nanoseconds 65 ol 70 t r - Nanoseconds 34 td(on) - - - - tr 80 I VCE = 200V 90 t r - Nanoseconds 90 50 120 22 21 20 25 35 45 55 65 75 85 95 105 115 20 125 O TJ - Degrees Centigrade IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: G_85N30C3(65)08-21-07 e et ol bs O Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.