IXGK120N60C2

ADVANCE TECHNICAL INFORMATION HiPerFASTTM IGBT Lightspeed 2TM Series Symbol Test Conditions VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ± 20 V VGEM Transient ± 30 V IC25 TC = 25°C (limited by leads) Maximum Ratings IC110 ICM SSOA VGE = 15 V, TVJ = 125°C, RG = 4.7 Ω (RBSOA) Clamped inductive load @ VCE ≤ 600 V PC TC = 25°C 75 A TC = 110°C (die limit) 120 A TC = 25°C, 1 ms 500 A ICM = 200 A 830 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C 2500 3000 V~ V~ 20..120/4.5..25 N/ib TJ VISOL 50/60 Hz, RMS, t = 1minute IISOL < 1 mA t = 20 seconds FC Clamping force TL Maximum lead temperature for soldering (Note 3) 300 °C TSOLD Plastic body for 10 seconds 260 °C 10 5 g g Weight TO-264 PLUS247 Symbol Test Conditions BVCES VGE(th) IC IC ICES VCE = VCES VGE = 0 V Characteristic Values (TJ = 25°C unless otherwise specified) Min. Typ. Max. = 1 mA, VGE = 0 V = 500 μA, VCE = VGE IGES VCE = 0 V, VGE = ± 20 V VCE(sat) IC = IT, VGE = 15 V Note 1 © 2005 IXYS All rights reserved VCES IC110 VCE(sat) tfi(typ) IXGK 120N60C2 IXGX 120N60C2 600 3.0 TJ = 125°C TJ = 25°C TJ = 125°C 2.1 2.0 5.0 V V 100 2 μA mA ± 200 nA 2.5 V V = 600 V = 120 A = 2.5 V = 45 ns TO-264(IXGK) G C (TAB) E PLUS247(IXGX) G C G = Gate E = Emitter E (TAB) C = Collector Tab = Collector Features z Very high frequency IGBT z Square RBSOA z High current handling capability z MOS Gate turn-on - drive simplicity Applications z Uninterruptible power supplies (UPS) z Switched-mode and resonant-mode power supplies z AC motor speed control z DC servo and robot drives z DC choppers Advantages z High power density z Very fast switching speeds for high frequency applications z High power surface mountable packages DS99515 (12/05) IXGK 120N60C2 IXGX 120NC60C2 Symbol gfs Test Conditions Characteristic Values (TJ = 25°C unless otherwise specified) Min. Typ. Max. IC = 60 A; VCE = 10 V, Note 1 50 50 Cies Coes Cres VCE = 25 V, VGE = 0 V, f = 1 MHz Qg Qge Qgc td(on) tri td(off) tfi IC = IT, VGE = 15 V, VCE = 0.5 VCES 75 S 11 nF 680 190 pF pF 350 nC 72 131 nC nC 18 ns Inductive load, TJ = 25°C 25 ns IC = 80 A, VGE = 15 V 95 VCE = 400 V, RG = Roff = 1.0 Ω 150 ns 45 ns Eoff 0.9 td(on) tri Eon td(off) tfi Eoff 18 25 1.6 130 85 1.5 ns ns mJ ns ns mJ 0.15 0.15 K/W K/W Inductive load, TJ = 125°C IC = 80 A, VGE = 15 V VCE = 400 V, RG = Roff = 1.0 Ω RthJC RthJC 1.6 mJ TO-264 AA Outline Pins:1-Gate 2- Drain 3 - Source Tab - Drain Dim. Millimeter Min. Max. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83 Inches Min. Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 PLUS 247TM (IXGX) Outline Note: 1. Pulse test, t ≤ 300 μs, duty cycle ≤ 2 %; 2. Test current IT = 100 A; 3. Temperature measured at 1.6 mm (0.062 in.) from case for 10 seconds Terminals: 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) 4 - Drain (Collector) Dim. A A1 A2 b b1 b2 C D E e L L1 Q R Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6771478 B2 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190