IXGK400N30A3

IXGK400N30A3 IXGX400N30A3* GenX3TM 300V IGBT VCES = 300V IC25 = 400A VCE(sat) ≤ 1.15V *Obsolete Part Number Ultra-low Vsat PT IGBTs for up to 10kHz switching TO-264 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 300 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 300 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 IC110 ILRMS ICM TC = 25°C TC = 110°C Terminal Current Limit TC = 25°C, 1ms 400 200 75 400 A A A A SSOA (RBSOA) VGE = 15V, TVJ = 125°C, RG = 1Ω Clamped inductive load ICM = 400 @ 0.8 • VCES A PC TC = 25°C 1000 W TJ TJM -55 ... +150 150 °C °C Tstg -55 ... +150 °C G = Gate C = Collector 300 260 °C °C Features 1.13/10 20..120/4.5..27 Nm/lb.in. N/lb. TL TSOLD Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 Md FC Mounting torque ( IXGK ) Mounting force ( IXGX ) Weight TO-264 PLUS247 G g g E E (TAB) PLUS247TM G 10 6 C z z z z C E (TAB) E = Emitter TAB = Collector Optimized for low switching losses Square RBSOA High avalanche capability International standard packages Advantages Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Characteristic Values Min. Typ. Max. BVCES IC = 1mA, VGE = 0V 300 VGE(th) IC = 4mA, VCE = VGE 3.0 ICES VCE = VCES VGE = 0V z z V 5.0 TJ = 125°C V z z VCE = 0V, VGE = ±20V ±400 nA VCE(sat) IC IC 1.15 = 100A, VGE = 15V, Note 1 = 400A 1.70 Applications 50 μA 2 mA IGES V V z z z z z z z © 2008 IXYS CORPORATION, All rights reserved High power density Low gate drive requirement Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts Inrush Current Protection Circuits DS99584A(11/08) IXGK400N30A3 IXGX400N30A3 Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Characteristic Values Min. Typ. Max. gfs 100 IC = 60A, VCE = 10V, Note 1 Cies Coes VCE = 25V, VGE = 0V, f = 1 MHz Cres Qg(on) Qge IC = 100A, VGE = 15V, VCE = 0.5 • VCES Qgc td(on) tr td(off) tf td(on) tr td(off) tf Resistive load, TJ = 25°C IC = 100A, VGE = 15V VCE = 240V, RG = 1Ω Resistive load, TJ = 125°C IC = 100A, VGE = 15V VCE = 240V, RG = 1Ω TO-264 (IXGK) Outline 170 S 19 nF 1350 pF 190 pF 560 nC 83 nC 185 nC 45 ns 45 ns 210 ns 107 ns 47 ns 53 ns 240 ns 315 ns 0.125 °C/W RthJC RthCK 0.15 °C/W PLUS247TM (IXGX) Outline Note: 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%. Terminals: 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) Dim. A A1 A2 b b1 b2 C D E e L L1 Q R IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXGK400N30A3 IXGX400N30A3 Fig. 1. Output Characteristics @ 25ºC Fig. 2. Output Characteristics @ 125ºC 350 300 VGE = 15V 11V 9V 300 VGE = 15V 11V 9V 250 200 IC - Amperes IC - Amperes 250 7V 150 200 7V 150 100 100 5V 50 50 5V 0 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 0.0 2.4 0.2 0.4 0.6 VCE - Volts 1.0 1.2 1.4 1.6 1.8 Fig. 4. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 3. Dependence of VCE(sat) on Junction Temperature 3.0 1.3 VGE = 15V TJ = 25ºC 2.8 1.2 I C 2.6 = 300A 2.4 1.1 1.0 I C VCE - Volts VCE(sat) - Normalized 0.8 VCE - Volts = 200A I 2.2 2.0 C = 300A 200A 100A 1.8 1.6 0.9 1.4 1.2 0.8 I C 1.0 = 100A 0.8 0.7 -50 -25 0 25 50 75 100 125 5 150 6 7 8 9 10 11 12 13 14 15 VGE - Volts TJ - Degrees Centigrade Fig. 5. Input Admittance Fig. 6. Transconductance 280 350 240 300 TJ = - 40ºC 250 TJ = 125ºC 25ºC - 40ºC 160 g f s - Siemens IC - Amperes 200 120 25ºC 200 125ºC 150 80 100 40 50 0 0 4.0 4.4 4.8 5.2 5.6 VGE - Volts © 2008 IXYS CORPORATION, All rights reserved 6.0 6.4 6.8 0 20 40 60 80 100 120 140 160 180 200 220 240 260 IC - Amperes IXGK400N30A3 IXGX400N30A3 100,000 VCE = 150V 14 f = 1 MHz I C = 100A Capacitance - PicoFarads I G = 10 mA 12 VGE - Volts Fig. 8. Capacitance Fig. 7. Gate Charge 16 10 8 6 4 Cies 10,000 Coes 1,000 Cres 2 100 0 0 50 100 150 200 250 300 350 400 450 500 550 0 600 5 10 15 25 30 35 40 Fig. 10. Maximum Transient Thermal Impedance Fig. 9. Reverse-Bias Safe Operating Area 450 20 VCE - Volts QG - NanoCoulombs 1.00 400 300 Z(th)JC - ºC / W IC - Amperes 350 250 200 150 0.10 0.01 TJ = 125ºC 100 RG = 1Ω dV / dt < 10V / ns 50 0 25 50 75 100 125 150 175 200 225 250 275 300 VCE - Volts 0.00 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: G_400N30A3(96)11-18-08-A IXGK400N30A3 IXGX400N30A3 Fig. 11. Resistive Turn-on Rise Time vs. Junction Temperature Fig. 12. Resistive Turn-on Rise Time vs. Collector Current 56 55 RG = 1Ω 54 VGE = 15V 55 54 I VCE = 240V 53 C = 300A, 200A, 100A 52 51 50 49 48 52 RG = 1Ω 51 VGE = 15V 50 VCE = 240V 49 48 47 47 46 46 45 45 44 25 35 45 55 65 75 85 95 TJ = 125ºC 53 t r - Nanoseconds t r - Nanoseconds 56 105 115 TJ = 25ºC 44 100 125 120 140 160 180 TJ - Degrees Centigrade Fig. 13. Resistive Turn-on Switching Times vs. Gate Resistance td(on) - - - - I C = 200A, 100A 64 80 60 70 56 60 52 50 48 40 44 30 40 2 3 4 5 6 7 8 9 td(off) - - - - 300 230 250 220 I C = 300A, 200A, 100A 200 200 100 190 50 10 25 35 45 800 300 700 = 100A 600 500 I C = 200A, 300A 400 220 200 200 180 100 2 3 4 5 6 105 115 180 125 240 tf 300 7 RG - Ohms © 2008 IXYS CORPORATION, All rights reserved 8 9 10 td(off) - - - 230 RG = 1Ω, VGE = 15V VCE = 240V 250 220 TJ = 125ºC 200 210 150 200 300 1 95 t d ( o f f ) - Nanoseconds 900 320 240 85 350 t f - Nanoseconds TJ = 125ºC, VGE = 15V 260 75 1000 t d ( o f f ) - Nanoseconds t f - Nanoseconds td(off) - - - - VCE = 240V C 65 Fig. 16. Resistive Turn-off Switching Times vs. Collector Current 1100 tf I 55 TJ - Degrees Centigrade 380 280 210 150 Fig. 15. Resistive Turn-off Switching Times vs. Gate Resistance 340 240 RG = 1Ω, VGE = 15V RG - Ohms 360 300 VCE = 240V t f - Nanoseconds 68 1 280 t d ( o f f ) - Nanoseconds VCE = 240V t d ( o n ) - Nanoseconds t r - Nanoseconds 350 72 100 90 260 250 tf 76 TJ = 125ºC, VGE = 15V 110 240 400 80 120 220 Fig. 14. Resistive Turn-off Switching Times vs. Junction Temperature 130 tr 200 IC - Amperes TJ = 25ºC 100 50 100 120 140 160 180 190 200 220 240 260 280 180 300 IC - Amperes IXYS REF: G_400N30A3(96)11-18-08-A Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.