IXGK50N60BD1

IXGK 50N60BD1 IXGX 50N60BD1 HiPerFASTTM IGBT with Diode VCES IC25 VCE(sat) tfi Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 75 A IC90 TC = 90°C 50 A ICM TC = 25°C, 1 ms 200 A ICM = 100 A SSOA VGE = 15 V, TVJ = 125°C, RG = 10 W (RBSOA) Clamped inductive load, L = 30 mH PC TC = 25°C @ 0.8 VCES 300 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C TJ Md Mounting torque, TO-247 AD Weight TO-264 TO-268 1.13/10 Nm/lb.in. Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Symbol Test Conditions g g 300 °C Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. BVCES IC = 1 mA, VGE = 0 V 500 VGE(th) IC = 500 mA, VCE = VGE 2.5 ICES VCE = VCES VGE = 0 V IGES VCE = 0 V, VGE = ±20 V VCE(sat) IC TJ = 25°C TJ = 125°C = IC90, VGE = 15 V IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved 10 5 V 5.5 V 650 5 mA mA ±100 nA 2.3 V = 600 V = 75 A = 2.3 V = 85 ns TO-264 AA (IXGK) (TAB) G C E PLUS247 (IXGX) G = Gate E = Emitter C = Collector Tab = Collector Features • International standard packages JEDEC TO-268 and PLUS247 (holeless TO-247) • High frequency IGBT and antparallel FRED in one package • New generation HDMOSTM process • High current handling capability • MOS Gate turn-on fordrive simplicity • Fast Recovery Epitaxial Diode (FRED) with soft recovery and low IRM Applications • AC motor speed control • DC servo and robot drives • DC choppers • Uninterruptible power supplies (UPS) • Switch-mode and resonant-mode power supplies Advantages • Space savings (two devices on one package • Easy to mount with 1 screw 98516B (7/00) 1-5 IXGK 50N60BD1 IXGX 50N60BD1 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. 35 S 4000 340 pF pF C res 100 pF Qg Qge 110 30 nC nC 35 nC gfs C ies Coes IC = IC90; VCE = 10 V, Pulse test, t £ 300 ms, duty cycle £ 2 % VCE = 25 V, VGE = 0 V, f = 1 MHz IC = IC90, VGE = 15 V, VCE = 0.5 VCES 25 Qgc TO-264 AA Outline Dim. td(on) t ri td(off) tfi Eoff td(on) t ri Eon td(off) tfi Inductive load, TJ = 25°C IC = IC90, VGE = 15 V, L = 100 mH, VCE = 0.8 VCES, RG = Roff = 2.7 W Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG Inductive load, TJ = 125°C IC = IC90, VGE = 15 V, L = 100 mH VCE = 0.8 VCES, RG = Roff = 2.7 W Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG Eoff RthJC RthCK TO-264 package Reverse Diode (FRED) Test Conditions VF IF = IC90, VGE = 0 V, Pulse test, t £ 300 ms, duty cycle d 22 % IRM IF = IC90, VGE = 0 V, -diF/dt = 100 A/ms VR = 100 V IF = 1 A; -di/dt = 200 A/ms; VR = 30 V RthJC © 2000 IXYS All rights reserved ns 50 ns 200 85 150 ns 150 ns ns 1.5 mJ 50 60 3 200 175 ns ns mJ ns ns 2.5 mJ 0.15 0.42 K/W K/W A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T 4.82 2.54 2.00 1.12 2.39 2.90 0.53 25.91 19.81 5.46 0.00 0.00 20.32 2.29 3.17 6.07 8.38 3.81 1.78 6.04 1.57 5.13 2.89 2.10 1.42 2.69 3.09 0.83 26.16 19.96 BSC 0.25 0.25 20.83 2.59 3.66 6.27 8.69 4.32 2.29 6.30 1.83 Inches Min. Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 PLUS247TM (IXGX) Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol t rr 50 Millimeter Min. Max. 2 35 2.5 V 2.5 175 50 A ns ns Dim. 0.65 K/W A A1 A2 b b1 b2 C D E e L L1 Q R Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 .244 .170 .190 2-5 IXGK 50N60BD1 IXGX 50N60BD1 100 TJ = 25°C 7V 60 40 20 11V VGE = 15V 13V 160 IC - Amperes 80 IC - Amperes 200 VGE = 15V 13V 11V 9V TJ = 25°C 9V 120 7V 80 40 5V 5V 0 0 0 1 2 3 4 5 0 2 4 VCE - Volts 8 Figure 2. Extended Output Characteristics 100 1.6 TJ = 125°C V = 15V GE 13V 11V VGE = 15V 9V VCE (sat) - Normalized 80 7V 60 40 5V 20 0 0 1 2 3 4 1.2 IC = 50A 1.0 IC = 25A 0.8 0.6 0.4 25 5 IC = 100A 1.4 50 75 VCE - Volts 100 125 150 TJ - Degrees C Figure 3. Saturation Voltage Characteristics Figure 4. Temperature Dependence of VCE(sat) 10000 100 f = 1Mhz VCE = 10V Ciss Capacitance - pF 80 IC - Amperes 10 VCE - Volts Figure 1. Saturation Voltage Characteristics IC - Amperes 6 60 40 TJ = 25°C TJ = 125°C 1000 Coss 100 Crss 20 10 0 0 2 4 6 VGE - Volts Figure 5. Admittance Curves © 2000 IXYS All rights reserved 8 10 0 5 10 15 20 25 30 35 40 VCE-Volts Figure 6. Capacitance Curves 3-5 IXGK 50N60BD1 IXGX 50N60BD1 6 12 E(ON) 10 4 8 E(OFF) 3 6 2 4 1 12 TJ = 125°C E(ON) 5 4 8 E(ON) 3 6 20 40 60 80 4 E(OFF) 2 E(ON) 0 E(OFF) IC = 50A 2 1 2 0 10 E(OFF) IC = 100A IC =25A 0 0 100 E(OFF) - millijoules RG = 4.7
E(OFF) - milliJoules E(ON) - millijoules 5 6 E(ON) - millijoules TJ = 125°C 0 0 10 20 30 40 50 60 RG - Ohms IC - Amperes Figure 7. Dependence of EON and EOFF on IC. Figure 8. Dependence of EON and EOFF on RG. 600 16 IC =25A VCE = 250V 100 IC - Amperes VGE - Volts 12 8 TJ = 125°C 10 RG = 6.2
dV/dt < 5V/ns 1 4 0.1 0 0 20 40 60 80 100 120 0 100 200 300 400 500 600 VCE - Volts Qg - nanocoulombs Figure 9. Gate Charge Figure 10. Turn-off Safe Operating Area ZthJC (K/W) 1 0.1 D=0.5 D=0.2 0.01 D=0.1 D=0.05 D=0.02 D = Duty Cycle D=0.01 Single pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 Pulse Width - Seconds Figure 11. IGBT Transient Thermal Resistance © 2000 IXYS All rights reserved 4-5 IXGK 50N60BD1 IXGX 50N60BD1 4000 160 A 140 IF 80 TVJ= 100°C VR = 300V nC A 3000 120 TVJ= 25°C 60 IF=120A IF= 60A IF= 30A Qr 100 TVJ=100°C 80 TVJ= 100°C VR = 300V IRM 2000 40 1000 20 IF=120A IF= 60A IF= 30A TVJ=150°C 60 40 20 0 0 1 2 0 100 V VF Fig. 12. Forward current IF versus VF Fig. 13. Reverse recovery charge Qr versus -diF/dt 2.0 140 400 ms 1000 600 A/ 800 -diF/dt Fig.14. Peak reverse current IRM versus -diF/dt 4 VFR µs tfr 3 tfr 120 1.0 200 V VFR 15 trr Kf 0 20 TVJ= 100°C VR = 300V ns 130 1.5 0 A/ms 1000 -diF/dt IF=120A IF= 60A IF= 30A 110 10 2 5 1 I RM 100 0.5 Qr 90 0.0 80 0 40 80 120 °C 160 0 TVJ 200 400 0 800 A/ ms 1000 600 TVJ= 100°C IF = 60A 0 200 400 -diF/dt Fig. 15. Dynamic parameters Qr, IRM versus TVJ Fig. 16. Recovery time trr versus -diF/dt 1 0 ms 1000 600 A/ 800 diF/dt Fig. 17. Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJC calculation: K/W i 0.1 1 2 3 ZthJC Rthi (K/W) ti (s) 0.324 0.125 0.201 0.0052 0.0003 0.0385 0.01 0.001 0.0001 0.00001 DSEP 60-06A 0.0001 0.001 0.01 s 0.1 1 t Fig. 18. Transient thermal resistance junction to case © 2000 IXYS All rights reserved 5-5