IXGK50N90B2D1

HiPerFASTTM IGBT with Fast Diode IXGH 50N90B2D1 IXGK 50N90B2D1 IXGX 50N90B2D1 VCES IC25 VCE(sat) tfi typ B2-Class High Speed IGBT with Fast Diode = 900 V = 75 A = 2.7 V = 200 ns Preliminary Data Sheet Symbol Test Conditions VCES TJ = 25°C to 150°C 900 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 900 V VGES Continuous ± 20 V VGEM Transient ± 30 V IC25 TC = 25°C (limited by leads) 75 A IC110 TC = 110°C 50 A ICM TC = 25°C, 1 ms 200 A SSOA (RBSOA) VGE = 15 V, TVJ = 125°C, RG = 10 Ω Clamped inductive load @ ≤ 600V ICM = 100 A PC Maximum Ratings TO-247 (IXGH) C (TAB) G C E PLUS247 (IXGX) C (TAB) TC = 25°C 400 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C 300 °C TJ Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s G C E TO-264 (IXGK) G Md Mounting torque (TO-247, TO-264) FC Mounting force (PLUS247) 1.13/10Nm/lb.in. 20..120 / 4.5..25 Weight TO-247 TO-264 PLUS247 Symbol Test Conditions (TJ = 25°C unless otherwise specified) VGE(th) IC = 250 μA, VCE = VGE ICES VCE = VCES VGE = 0 V IGES VCE = 0 V, VGE = ± 20 V VCE(sat) IC = IC110, VGE = 15 V, Note 1 © 2006 IXYS All rights reserved TJ = 150°C 2.2 TJ = 125°C S C (TAB) N/lb 6 10 6 g g g Characteristic Values min. typ. max. 3.0 D 5.0 V 50 1 μA mA ± 100 nA 2.7 V V G = Gate E = Emitter C = Collector TAB = Collector Features High frequency IGBT High current handling capability MOS Gate turn-on - drive simplicity Applications PFC circuits Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power supplies AC motor speed control DC servo and robot drives DC choppers Advantages High power density Very fast switching speeds for high frequency applications DS99393(01/06) IXGH 50N90B2D1 IXGK 50N90B2D1 IXGX 50N90B2D1 Symbol Test Conditions (TJ = 25°C unless otherwise specified) gfs IC Characteristic Values min. typ. max. = IC110 ; VCE = 10 V, Note 1 25 Cies Coes VCE = 25 V, VGE = 0 V, f = 1 MHz 40 S 2500 pF 205 pF 75 pF 135 nC 23 nC 50 nC 20 ns 28 ns Cres Qg Qge IC = IC110 , VGE = 15 V, VCE = 0.5 VCES Qgc td(on) tri td(off) tfi Inductive load IC = IC110, VGE = 15 V VCE = 720 V, RG = Roff = 5 Ω 350 tri Eon ns 4.7 7.5 mJ 20 ns 28 ns 1.5 mJ td(off) 400 ns Inductive load, TJ = 125°°C IC = IC110, VGE = 15 V VCE = 720 V, RG = Roff = 5 Ω ns 200 Eoff td(on) 500 tfi 420 ns Eoff 8.7 mJ RthJC 0.31 K/W RthCH 0.21 K/W Diode Symbol Conditions IF25 TC = 115°C Maximum Ratings 30 Symbol Conditions (TJ = 25°C unless otherwise specified ) VF IF = 30 A; Note 1 IRM trr RthJC RthCH A Characteristic Values min. typ. max. 2.5 1.8 2.75 V V IF = 10 A; diF/dt = -100 A/μs; TVJ = 100°C VR = 100 V; VGE = 0 V 5.5 200 11.5 A ns with heat transfer paste 0.25 TVJ = 150°C 0.9 K/W K/W Note 1: Pulse test, t ≤ 300 μs, duty cycle ≤ 2 % IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6771478 B2 IXGH 50N90B2D1 IXGK 50N90B2D1 IXGX 50N90B2D1 Fig. 1. Output Characteristics @ 25 ºC Fig. 2. Extended Output Characteristics @ 25 ºC 300 100 90 VGE =15V 80 13V 11V VGE = 15V I C - Amperes I C - Amperes 9V 70 60 50 7V 40 30 11V 200 150 9V 100 7V 20 50 10 5V 0 5V 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 0 3 6 Fig. 3. Output Characteristics @ 125 ºC 12 15 Fig. 4. Dependence of V CE(sat) on Tem perature 100 1.3 90 VGE = 15V 80 13V 11V VGE = 15V I C = 100A 1.2 70 VC E (sat)- Normalized I C - Amperes 9 V C E - Volts V C E - Volts 9V 60 50 7V 40 30 20 1.1 1.0 I C = 50A 0.9 0.8 I C = 25A 5V 10 0 0.7 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 -50 -25 V CE - Volts 0 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. Collector-to-Em itter Voltage vs. Gate-to-Em itter voltage Fig. 6. Input Adm ittance 250 6.5 6.0 TJ = 25ºC 5.5 I C - Amperes I C = 100A 5.0 VC E - Volts 13V 250 50A 25A 4.5 4.0 3.5 225 TJ = -40ºC 200 25ºC 125ºC 175 150 125 100 3.0 75 2.5 50 2.0 25 0 1.5 5 6 7 8 9 10 11 V G E - Volts © 2006 IXYS All rights reserved 12 13 14 15 3 4 5 6 7 8 V G E - Volts 9 10 11 12 IXGH 50N90B2D1 IXGK 50N90B2D1 IXGX 50N90B2D1 Fig. 8. Dependence of Turn-off Fig. 7. Transconductance Energy Loss on RG 40 55 50 TJ = 125ºC 35 VGE = 15V 45 E o f f - milliJoules 40 g f s - Siemens I C = 100A 35 30 TJ = -40ºC 25 25ºC 20 125ºC 15 30 VCE = 720V 25 20 I C = 50A 15 10 10 5 5 I C = 25A 0 0 0 25 50 75 100 125 150 175 200 225 0 30 60 Energy Loss on IC 150 20 20 18 R G = 5Ω 16 VGE = 15V 14 VCE = 720V 16 12 10 8 TJ = 25ºC 6 14 12 R G = 5Ω 10 VGE = 15V 6 4 2 2 0 0 30 40 50 60 70 80 90 I C = 50A VCE = 720V 8 4 20 I C = 100A 18 TJ = 125ºC E o f f - milliJoules E o f f - MilliJoules 120 Fig. 10. Dependence of Turn-off Energy Loss on Tem perature Fig. 9. Dependence of Turn-Off I C = 25A 25 100 35 45 55 65 75 85 95 105 115 125 TJ - Degrees Centigrade I C - Amperes Fig. 12. Dependence of Turn-off Fig. 11. Dependence of Turn-off Sw itching Tim e on IC Sw itching Tim e on RG 600 1300 td(off) 1100 tfi - - - - - - 1000 TJ = 125ºC 900 VGE = 15V 800 VCE = 720V I C = 25A Switching Time - nanoseconds 1200 Switching Time - nanoseconds 90 R G - Ohms I C - Amperes 50A 100A 700 I C = 100A 600 50A 25A 500 400 300 200 td(off) 550 tfi - - - - - R G = 5Ω, VGE = 15V 500 VCE = 720V 450 TJ = 125ºC 400 350 300 TJ = 25ºC 250 200 150 5 10 15 20 25 30 R G - Ohms 35 40 45 50 IXYS reserves the right to change limits, test conditions, and dimensions. 20 30 40 50 60 70 I C - Amperes 80 90 100 IXGH 50N90B2D1 IXGK 50N90B2D1 IXGX 50N90B2D1 Fig. 13. Dependence of Turn-off Sw itching Tim e on Tem perature Fig. 14. Gate Charge 15 td(off) 550 13.5 tfi - - - - - - 500 I C = 25A 450 V GE = 15V 400 V CE = 720V VCE = 450V I C = 50A 12 50A 100A RG = 5 Ω I G = 10mA 10.5 VG E - Volts Switching Time - nanoseconds 600 350 300 9 7.5 6 4.5 250 I C = 100A 3 50A 25A 1.5 200 150 0 25 35 45 55 65 75 85 95 105 115 125 0 TJ - Degrees Centigrade 20 40 60 80 100 120 140 Q G - nanoCoulombs Fig. 16. Reverse-Bias Safe Operating Area Fig. 15. Capacitance 10000 110 f = 1 MHz 100 C ies 1000 80 I C - Amperes Capacitance - p F 90 C oes 100 C res 70 60 50 40 30 TJ = 125ºC 20 R G = 10Ω dV/dT < 10V/ns 10 10 0 5 10 15 20 25 30 35 0 40 100 V C E - Volts 200 300 400 500 600 700 800 900 V C E - Volts Fig. 17. Maxim um Transient Therm al Resistance R( t h ) J C - ºC / W 1 0.1 0.01 0.1 1 10 Pulse Width - milliseconds © 2006 IXYS All rights reserved 100 1000 IXGH 50N90B2D1 IXGK 50N90B2D1 IXGX 50N90B2D1 5 70 A 60 60 TVJ= 100°C VR = 600V μC Qr IF 50 50 4 IRM IF= 60A IF= 30A IF= 15A 3 40 TVJ=150°C 2 TVJ=100°C 20 20 TVJ= 25°C 1 10 10 0 1 2 3 V 0 100 4 0 A/μs 1000 -diF/dt VF Fig. 18. Forward current IF versus VF 2.0 400 600 A/μs 800 1000 -diF/dt 220 120 TVJ= 100°C VR = 600V TVJ= 100°C IF = 30A V VFR trr tfr 0.8 40 0.0 120 40 80 120 C 160 0 0 200 TVJ 400 600 800 1000 A/μs 0 200 400 -diF/dt Fig. 21. Dynamic parameters Qr, IRM versus TVJ Fig. 22. Recovery time trr versus -diF/dt 2 0.0 600 A/μs 800 1000 diF/dt Fig. 23. Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJC calculation: 1 i K/W 1 2 3 ZthJC 0.1 0.01 0.001 0.00001 0.4 140 Qr 0 μs IF= 60A IF= 30A IF=15A 160 0.5 1.2 tfr VFR 80 180 IRM 200 Fig. 20. Peak reverse current IRM versus -diF/dt 200 1.5 Kf 0 Fig. 19. Reverse recovery charge Qr versus -diF/dt ns 1.0 IF= 60A IF= 30A IF=15A 40 30 30 0 TVJ= 100°C VR = 600V A 0.0001 0.001 0.01 s 0.1 t Fig. 24 Transient thermal resistance junction to case IXYS reserves the right to change limits, test conditions, and dimensions. 1 Rthi (K/W) ti (s) 0.465 0.179 0.256 0.0052 0.0003 0.0397 Package Outlines TO-264 AA Outline PLUS 247TM Outline TO-247 AD Outline ∅P e Dim. Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Terminals: Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC Dim. A A1 A2 b b1 b2 C D E e L L1 Q R Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) 4 - Drain (Collector) PRELIMINARYTECHNICALINFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a subjective preproduction design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. © 2006 IXYS All rights reserved Dim. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T Millimeter Min. Max. 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83 Min. Inches Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications.Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.