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IXGK55N120A3H1

IXGK55N120A3H1

  • 厂商:

    IXYS(艾赛斯)

  • 封装:

    TO264-3

  • 描述:

    IGBT 1200V 125A 460W TO264

  • 详情介绍
  • 数据手册
  • 价格&库存
IXGK55N120A3H1 数据手册
Advance Technical Information IXGK55N120A3H1 IXGX55N120A3H1 GenX3TM 1200V IGBTs w/ Diode VCES = 1200V IC110 = 55A VCE(sat) ≤ 2.3V Ultra-Low-Vsat PT IGBTs for up to 3kHz Switching TO-264 (IXGK) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 IC110 ILRMS ICM TC TC TC TC 125 55 120 400 A A A A SSOA (RBSOA) VGE = 15V, TVJ = 125°C, RG = 3Ω Clamped Inductive Load ICM = 110 @ 0.8 • VCES A PC TC = 25°C 460 W -55 ... +150 °C = 25°C ( Chip Capability ) = 110°C = 25°C (Lead RMS Limit) = 25°C, 1ms TJ TJM 150 °C Tstg -55 ... +150 °C 300 260 °C °C 1.13/10 20..120/4.5..27 Nm/lb.in. N/lb. 10 6 g g TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062 in.) from Case for 10 Md FC Mounting Torque ( IXGK ) Mounting Force ( IXGX ) Weight TO-264 PLUS247 G G VGE(th) IC = 1mA, VCE = VGE ICES VCE = VCES, VGE = 0V 3.0 5.0 IGES VCE = 0V, VGE = ±20V VCE(sat) IC = IC110, VGE = 15V, Note 2 TJ = 125°C ±100 nA 1.85 1.90 2.3 E Tab E = Emitter Tab = Collector Features z z Optimized for Low Conduction Losses Anti-Parallel Ultra Fast Diode Advantages V z z z z z z z z z © 2010 IXYS CORPORATION, All Rights Reserved Tab High Power Density Low Gate Drive Requirement Applications V 100 μA 2.0 mA Note 1, TJ = 125°C C G = Gate C = Collector z Characteristic Values Min. Typ. Max. E E PLUS247TM (IXGX) z Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) C Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts Inrush Current Protection Circuits DS100227(01/10) IXGK55N120A3H1 IXGX55N120A3H1 Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 30 IC = IC110, VCE = 10V, Note 2 Cies Coes TO-264 (IXGK) Outline 45 S 4340 pF 300 pF VCE = 25V, VGE = 0V, f = 1 MHz Cres 115 pF Qg(on) 185 nC Qge IC = IC110, VGE = 15V, VCE = 0.5 • VCES Qgc td(on) tri Inductive load, TJ = 25°C 25 nC 75 nC 23 ns 42 ns Eon IC = IC110, VGE = 15V 5.1 mJ td(off) VCE = 0.8 • VCES, RG = 3Ω 365 ns tfi Note 3 282 ns Eoff 13.3 mJ td(on) 24 ns tri Inductive load, TJ = 125°C 46 ns Eon IC = IC110, VGE = 15V 9.5 mJ td(off) VCE = 0.8 • VCES, RG = 3Ω tfi Eoff Note 3 618 ns 635 ns 29.0 mJ Terminals: 1 = Gate 2 = Collector 3 = Emitter 0.27 °C/W RthJC RthCK 0.15 °C/W PLUS 247TM (IXGX) Outline Reverse Diode (FRED) Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. VF IF = 60A, VGE = 0V, Note 2 trr IF = 60A, VGE = 0V, 200 ns IRM -diF/dt = 350A/μs, VR = 600V, TJ = 100°C 24.6 A 1.85 1.90 TJ = 150°C RthJC 2.5 V V 0.42 °C/W Notes: 1. Part must be heatsunk for high-temp Ices measurement. 2. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. 3. Switching times & energy losses may increase for higher VCE(Clamp), TJ or RG. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. Terminals: Dim. A A1 A2 b b1 b2 C D E e L L1 Q R 1 = Gate 2 = Collector 3 = Emitter Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190 IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
IXGK55N120A3H1
1. 物料型号: IXGK55N120A3H1 和 IXGX55N120A3H1,这是1200V的IGBTs,带有二极管,适用于高达3kHz的开关应用。

2. 器件简介: 这些IGBTs具有超低的导通压降(Vsat),专为低导通损耗而优化,内置了反并联的超快二极管。它们具有高功率密度和低门驱动要求。

3. 引脚分配: 器件的引脚分配为:1 = 栅极(Gate),2 = 集电极(Collector),3 = 发射极(Emitter)。

4. 参数特性: 提供了一系列电气特性,包括最大额定值(如1200V的V_CEs和55A的I_C(110°C)),以及典型的导通电压(V_CE(sat))不超过2.3V。

5. 功能详解: 器件特点包括优化的低导通损耗和内置的反并联超快二极管。优势包括高功率密度和低门驱动需求。

6. 应用信息: 这些IGBTs适用于多种应用,包括电力逆变器、不间断电源(UPS)、电机驱动、开关电源(SMPS)、功率因数校正(PFC)电路、电池充电器、焊接机、灯具、浪涌电流保护电路等。
IXGK55N120A3H1 价格&库存

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