IXGK64N60B3D1

IXGK64N60B3D1 IXGX64N60B3D1 GenX3TM 600V IGBT with Diode VCES IC110 VCE(sat) tfi(typ) Medium speed low Vsat PT IGBTs 5-40 kHz switching = = ≤£ = 600V 64A 1.8V 88ns TO-264 (IXGK) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ 600 600 V V VGES VGEM Continuous Transient ±20 ±30 V V IC110 TC = 110°C 64 A ICM TC = 25°C, 1ms 400 A SSOA VGE = 15V, TVJ = 125°C, RG = 3Ω ICM = 200 A (RBSOA) Clamped inductive load @ VCE ≤ 600V PC TC = 25°C 460 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C 1.13 / 10 20..120 / 4.5..27 Nm/lb.in. N/lb. 300 260 °C °C 10 6 g g TJ Md FC Mounting torque (TO-264) Mounting force (PLUS247) TL TSOLD Maximum lead temperature for soldering 1.6mm (0.062 in.) from case for 10s Weight TO-264 PLUS247 G C (TAB) E PLUS247 (IXGX) G G CD TAB ES G = Gate E = Emitter C = Collector TAB = Collector Features z z z z Optimized for low conduction and switching losses Square RBSOA Anti-parallel ultra fast diode International standard packages Advantages z z Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Characteristic Values Min. Typ. Max. VGE(th) IC = 250μA, VCE = VGE 3.0 ICES VCE = VCES VGE = 0V IGES VCE = 0V, VGE = ±20V VCE(sat) IC = 50A, VGE = 15V, Note 1 TJ = 125°C 1.59 Applications 5.0 V 700 2.5 μA mA ±100 nA 1.80 V z z z z z z z z © 2008 IXYS CORPORATION, All rights reserved High power density Low gate drive requirement Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts DS99939A(06/08) IXGK64N60B3D1 IXGX64N60B3D1 Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Characteristic Values Min. Typ. Max. gfs IC = 50A, VCE = 10V, Note 1 Cies Coes Cres VCE = 25V, VGE = 0V, f = 1MHz 38 Qg Qge Qgc IC = 50A, VGE = 15V, VCE = 0.5 • VCES td(on) tri Eon td(off) tfi Inductive load, TJ = 25°°C IC = 50A, VGE = 15V 64 S 4750 260 65 pF pF pF 168 28 61 nC nC nC 25 ns 41 1.5 ns mJ 138 VCE = 480V, RG = 3Ω TO-264 (IXGK) Outline ns 88 150 ns Eoff 1.0 1.9 mJ td(on) tri Eon td(off) tfi Eoff 24 40 2.70 195 131 1.95 ns ns mJ ns ns mJ 0.15 0.27 °C/W °C/W Inductive load, TJ = 125°°C IC = 50A,VGE = 15V VCE = 480V, RG = 3Ω RthJC RthCS Reverse Diode (FRED) Symbol Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. Test Conditions VF IF = 60A, VGE = 0V, Note 1 TJ = 150°C 1.4 V V IRM IF = 60A, VGE = 0V, TJ = 100°C -diF/dt = 100A/μs, VR = 100V IF = 1A, -di/dt = 200A/μs, VR = 30V 8.3 A 35 ns trr 2.1 1.35 °C/W RthJC DIM INCHES MIN A A1 b b1 b2 c D E e J K L L1 ØP Q Q1 ØR ØR1 S 0.185 0.102 0.037 0.087 0.110 0.017 1.007 0.760 .215 BSC 0.000 0.000 0.779 0.087 0.122 0.240 0.330 0.155 0.085 0.243 Terminals: IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 0.010 0.010 0.842 0.102 0.138 0.256 0.346 0.187 0.093 0.253 4.70 2.59 0.94 2.21 2.79 0.43 25.58 19.30 5.46 BSC 0.00 0.00 19.79 2.21 3.10 6.10 8.38 3.94 2.16 6.17 5.31 3.00 1.40 2.59 3.20 0.74 26.59 20.29 0.25 0.25 21.39 2.59 3.51 6.50 8.79 4.75 2.36 6.43 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) 4 - Drain (Collector) A A1 A2 b b1 b2 C D E e L L1 Q R IXYS reserves the right to change limits, test conditions, and dimensions. 0.209 0.118 0.055 0.102 0.126 0.029 1.047 0.799 MILLIMETERS MIN MAX PLUS247TM (IXGX) Outline Dim. Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%. MAX Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXGK64N60B3D1 IXGX64N60B3D1 Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 100 300 VGE = 15V 11V 90 250 80 70 9V IC - Amperes IC - Amperes VGE = 15V 13V 11V 60 50 7V 40 200 9V 150 100 30 7V 20 50 10 5V 0 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 2.2 1 2 4 5 6 Fig. 4. Dependence of VCE(sat) on Junction Temperature Fig. 3. Output Characteristics @ 125ºC 1.25 100 VGE = 15V 11V 90 VGE = 15V 1.20 80 1.15 VCE(sat) - Normalized 9V 70 IC - Amperes 3 VCE - Volts VCE - Volts 60 7V 50 40 30 I = 100A 1.05 I 1.00 C = 50A 0.95 0.90 I 0.85 20 C 1.10 C = 25A 5V 10 0.80 0 0.75 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 -50 -25 0 VCE - Volts Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage 50 75 100 125 150 8.0 8.5 Fig. 6. Input Admittance 200 3.6 3.4 180 TJ = 25ºC 3.2 160 3.0 140 IC - Amperes VCE - Volts 25 TJ - Degrees Centigrade 2.8 2.6 I C 2.4 = 100A 50A 25A 120 TJ = 125ºC 25ºC - 40ºC 100 80 2.2 60 2.0 40 1.8 20 1.6 1.4 0 5 6 7 8 9 10 11 VGE - Volts © 2008 IXYS CORPORATION, All rights reserved 12 13 14 15 4.0 4.5 5.0 5.5 6.0 6.5 VGE - Volts 7.0 7.5 IXGK64N60B3D1 IXGX64N60B3D1 Fig. 7. Transconductance Fig. 8. Gate Charge 110 16 TJ = - 40ºC 100 VCE = 300V 14 I C = 50A 90 25ºC 70 60 VGE - Volts g f s - Siemens I G = 10 mA 12 80 125ºC 50 10 8 6 40 30 4 20 2 10 0 0 0 20 40 60 80 100 120 140 160 180 200 0 20 40 IC - Amperes 60 80 100 120 140 160 180 35 40 QG - NanoCoulombs Fig. 10. Capacitance Fig. 9. Reverse-Bias Safe Operating Area 10,000 220 200 Capacitance - PicoFarads 180 IC - Amperes 160 140 120 100 80 60 40 20 0 100 TJ = 125ºC Cies 1,000 Coes 100 Cres RG = 3Ω dV / dt < 10V / ns f = 1 MHz 10 200 300 400 500 0 600 5 10 15 20 25 30 VCE - Volts VCE - Volts Fig. 11. Maximum Transient Thermal Impedance Z(th)JC - ºC / W 1.00 0.10 0.01 0.0001 0.001 0.01 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. 0.1 1 10 IXGK64N60B3D1 IXGX64N60B3D1 Fig. 13. Inductive Switching Energy Loss vs. Junction Temperature Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance 6 7 I 5 C 5.0 5.5 Eoff 4.5 = 84A 3 1 2 0 4.5 VCE = 480V 3.5 4.0 3.0 3.5 2.5 3.0 I C = 42A 2.0 2.0 1.0 1.5 1.0 I C = 21A -0.5 0 0 5 10 15 20 25 30 25 35 35 45 55 RG - Ohms ---- RG = 3Ω , VGE = 15V TJ = 125ºC VCE = 480V 2.0 2.5 1.5 2.0 TJ = 25ºC 1.0 1.5 0.5 1.0 0.0 0.5 -0.5 - MilliJoules 3.0 on 3.5 2.5 30 35 40 45 50 170 800 55 60 65 70 75 80 tf td(off) - - - - TJ = 125ºC, VGE = 15V 600 500 I 130 I 5 10 90 80 130 = 21A 60 25 35 45 55 65 75 85 30 35 210 TJ = 125ºC 95 TJ - Degrees Centigrade © 2008 IXYS CORPORATION, All rights reserved 105 115 115 125 200 190 tf 150 t f - Nanoseconds t f - Nanoseconds 145 - Nanoseconds 100 C 25 160 d(off) 160 110 I 20 170 = 42A, 84A 70 15 180 190 130 C 200 = 21A Fig. 17. Inductive Turn-off Switching Times vs. Collector Current 175 I C 100 0 td(off) - - - - 140 120 400 td(off) - - - - 180 RG = 3Ω , VGE = 15V 140 170 VCE = 480V 130 160 120 150 TJ = 25ºC 110 140 100 130 90 120 80 110 70 100 20 25 30 35 40 45 50 55 60 IC - Amperes 65 70 75 80 85 t d(off) - Nanoseconds VCE = 480V = 42A 100 85 t 150 C 300 110 205 RG = 3Ω , VGE = 15V = 21A, 42A, 84A RG - Ohms 180 160 C 140 Fig. 16. Inductive Turn-off Switching Times vs. Junction Temperature tf 700 I VCE = 480V 150 IC - Amperes 170 0.0 125 120 0.0 25 115 900 160 4.0 3.0 20 105 t d(off) - Nanoseconds 3.5 95 180 4.5 t f - Nanoseconds 4.0 85 5.0 E Eoff - MilliJoules 5.5 Eon 75 Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance 5.0 Eoff 65 0.5 TJ - Degrees Centigrade Fig. 14. Inductive Switching Energy Loss vs. Collector Current 4.5 2.5 1.5 0.0 -1 5.0 0.5 1 I C = 21A = 84A - MilliJoules 2 C on I C = 42A I E VCE = 480V - MilliJoules 4 TJ = 125ºC , VGE = 15V on 3 --- E Eoff - MilliJoules 5 Eon - Eoff - MilliJoules 4.0 Eoff ---- RG = 3Ω , VGE = 15V 6 4 Eon IXGK64N60B3D1 IXGX64N60B3D1 Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance 130 80 tr td(on) - - - - 110 TJ = 125ºC, VGE = 15V I C 55 70 50 C 45 = 42A 50 40 40 35 30 30 20 I C 70 10 5 10 15 20 25 30 RG = 3Ω 60 28 td(on) - - - - 27 VGE = 15V VCE = 480V 50 26 I C = 42A 40 25 30 24 20 23 22 I 20 0 tr 10 25 = 21A 29 I C = 84A C = 21A 0 35 25 RG - Ohms t d(on) - Nanoseconds 60 80 I 80 t d(on) - Nanoseconds 65 90 60 30 70 VCE = 480V 100 90 75 = 84A t r - Nanoseconds 120 t r - Nanoseconds Fig. 19. Inductive Turn-on Switching Times vs. Junction Temperature 35 45 55 65 75 85 95 105 115 21 125 TJ - Degrees Centigrade Fig. 20. Inductive Turn-on Switching Times vs. Collector Current 32 70 tr td(on) - - - - 31 65 RG = 3Ω , VGE = 15V 30 60 VCE = 480V 25ºC < TJ < 125ºC 29 55 28 50 27 45 26 40 25 35 24 30 23 25 22 20 21 15 t d(on) - Nanoseconds t r - Nanoseconds 75 20 20 25 30 35 40 45 50 55 60 65 70 75 80 85 IC - Amperes IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: G_64N60B3(75) 4-09-08-A IXGK64N60B3D1 IXGX64N60B3D1 4000 160 A 140 IF 80 TVJ= 100°C nC VR = 300V 3000 120 TVJ=100°C 80 60 Qr TVJ= 25°C 100 TVJ= 100°C VR = 300V A IRM IF=120A IF= 60A IF= 30A 2000 IF=120A IF= 60A IF= 30A 40 TVJ=150°C 60 1000 40 20 20 0 0 1 2 0 100 V VF Fig. 21. Forward current IF versus VF Fig. 22. Reverse recovery charge Qr versus -diF/dt 2.0 0 A/μs 1000 -diF/dt TVJ= 100°C VR = 300V trr 1.5 Kf 400 1.6 V VFR 15 μs 1.2 tfr IF=120A IF= 60A IF= 30A 110 IRM 600 A/μs 800 1000 -diF/dt 20 120 1.0 200 Fig. 23. Peak reverse current IRM versus -diF/dt 140 ns 130 0 VFR 10 0.8 5 0.4 100 0.5 Qr 0.0 0 40 90 80 120 °C 160 80 0 TVJ 200 400 600 0 800 1000 A/μs TVJ= 100°C IF = 60A 0 200 400 -diF/dt Fig. 24. Dynamic parameters Qr, IRM versus TVJ Fig. 25. Recovery time trr versus -diF/dt 0.0 600 A/μs 800 1000 diF/dt Fig. 26. Peak forward voltage VFR and tfr versus diF/dt 110.0000 K/W 1.0000 0.1 ºC / W ZthJC 0.1000 Z (th)JC 0.01 0.0100 0.001 0.0010 0.0001 0.0001 0.00001 0.00001 0.0001 Fig. 27. DSEP 2x61-06A 0.001 0.0001 0.01 0.001 0.1 0.01 s t 1 Maximum transient thermal impedance junction to case (for diode) © 2008 IXYS CORPORATION, All rights reserved 0.1 t S 1 10 tfr Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. 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