IXGK82N120A3

Preliminary Technical Information IXGK82N120A3 IXGX82N120A3 GenX3TM 1200V IGBTs VCES = 1200V IC110 = 82A VCE(sat) ≤ 2.05V Ultra-Low-Vsat PT IGBTs for up to 3kHz Switching TO-264 (IXGK) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 IC110 ILRMS ICM TC TC TC TC 260 82 120 580 A A A A SSOA (RBSOA) VGE = 15V, TVJ = 125°C, RG = 2Ω Clamped Inductive Load ICM = 164 @ 0.8 • VCES A PC TC = 25°C 1250 W -55 ... +150 °C = 25°C ( Chip Capability ) = 110°C = 25°C (Lead RMS Limit) = 25°C, 1ms TJ TJM 150 °C Tstg -55 ... +150 °C 300 260 °C °C 1.13/10 20..120/4.5..27 Nm/lb.in. N/lb. 10 6 g g TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062 in.) from Case for 10 Md FC Mounting Torque ( IXGK ) Mounting Force ( IXGX ) Weight TO-264 PLUS247 G G BVCES IC = 250μA, VCE = 0V 1200 VGE(th) IC = 1mA, VCE = VGE ICES VCE = VCES, VGE = 0V 5.0 IGES VCE = 0V, VGE = ±20V VCE(sat) IC = IC110, VGE = 15V, Note 2 TJ = 125°C V 50 μA 2.5 mA Note 1, TJ = 125°C ±100 nA 1.83 1.95 2.05 E Tab E = Emitter Tab = Collector Features z z Optimized for Low Conduction Losses International Standard Packages Advantages V z z z z z z z z z © 2009 IXYS CORPORATION, All Rights Reserved Tab High Power Density Low Gate Drive Requirement Applications V 3.0 C G = Gate C = Collector z Characteristic Values Min. Typ. Max. E E PLUS247TM (IXGX) z Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) C Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts Inrush Current Protection Circuits DS100164A(10/09) IXGK82N120A3 IXGX82N120A3 Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. IC = 60A, VCE = 10V, Note 2 40 Cies Coes 66 TO-264 AA ( IXGK) Outline S 7700 pF 520 pF VCE = 25V, VGE = 0V, f = 1 MHz Cres 190 pF Qg(on) 340 nC Qge IC = IC110, VGE = 15V, VCE = 0.5 • VCES Qgc td(on) tri Inductive load, TJ = 25°C 54 nC 146 nC 34 ns 75 ns Eon IC = 80A, VGE = 15V 5.5 mJ td(off) VCE = 0.5 • VCES, RG = 2Ω 265 ns tfi Note 3 780 1300 ns 12.5 20.0 mJ Eoff td(on) 32 ns tri Inductive load, TJ = 125°C 77 ns Eon IC = 80A, VGE = 15V 6.7 mJ td(off) VCE = 0.5 • VCES, RG = 2Ω tfi Eoff Note 3 340 ns 1250 ns 22.5 mJ 0.10 °C/W RthJC RthCK 0.15 °C/W Dim. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T Millimeter Min. Max. 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83 Inches Min. Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 PLUS247TM (IXGX) Outline Notes: 1. Part must be heatsunk for high-temp ICES measurement. 2. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. 3. Switching times & energy losses may increase for higher VCE(Clamp), TJ or RG. Terminals: PRELIMINARY TECHNICAL INFORMATION Dim. The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 Millimeter Min. Max. Inches Min. Max. A A1 A2 4.83 2.29 1.91 5.21 2.54 2.16 .190 .090 .075 .205 .100 .085 b b1 b2 1.14 1.91 2.92 1.40 2.13 3.12 .045 .075 .115 .055 .084 .123 C D E e L L1 Q R IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 6,404,065 B1 6,534,343 6,583,505 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXGK82N120A3 IXGX82N120A3 Fig. 1. Output Characteristics @ T J = 25ºC Fig. 2. Extended Output Characteristics @ T J = 25ºC 180 320 VGE = 15V 13V 11V 160 11V 140 240 9V 120 IC - Amperes IC - Amperes VGE = 15V 13V 280 100 80 60 200 9V 160 120 7V 80 40 7V 40 20 5V 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 3.5 2 4 6 8 12 14 Fig. 4. Dependence of VCE(sat) on Junction Temperature Fig. 3. Output Characteristics @ T J = 125ºC 180 1.8 VGE = 15V 13V 11V 160 VGE = 15V 1.6 I 120 VCE(sat) - Normalized 140 IC - Amperes 10 VCE - Volts VCE - Volts 9V 100 80 7V 60 = 164A C 1.4 1.2 I C = 82A 1.0 40 0.8 20 I 5V = 41A 0.6 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 -50 4.0 -25 0 VCE - Volts 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance 180 5.0 160 TJ = 25ºC 4.5 140 4.0 3.5 I 3.0 C IC - Amperes VCE - Volts C = 164A 2.5 120 100 80 TJ = 125ºC 25ºC - 40ºC 60 82A 2.0 1.5 40 20 41A 1.0 0 6 7 8 9 10 11 12 VGE - Volts © 2009 IXYS CORPORATION, All Rights Reserved 13 14 15 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 VGE - Volts 7.0 7.5 8.0 8.5 9.0 IXGK82N120A3 IXGX82N120A3 Fig. 8. Gate Charge Fig. 7. Transconductance 100 16 TJ = - 40ºC VCE = 600V 14 I C = 82A 80 125ºC VGE - Volts g f s - Siemens 60 I G = 10mA 12 25ºC 40 10 8 6 4 20 2 0 0 0 20 40 60 80 100 120 140 160 180 200 0 50 100 Fig. 9. Capacitance 200 250 300 350 Fig. 10. Reverse-Bias Safe Operating Area 180 10,000 160 Cies 140 120 IC - Amperes Capacitance - PicoFarads 150 QG - NanoCoulombs IC - Amperes 1,000 Coes f = 1 MHz Cres 100 1.000 0 5 10 15 20 25 30 35 40 100 80 60 40 TJ = 125ºC 20 RG = 2Ω dv / dt < 10V / ns 0 200 300 400 500 600 700 800 900 1000 1100 1200 VCE - Volts VCE - Volts Fig. 11. Maximum Transient Thermal Impedance 0.200 Z (th)JC - ºC / W 0.100 0.010 0.001 0.00001 0.0001 0.001 0.01 Pulse Width - Second IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.1 1 IXGK82N120A3 IXGX82N120A3 Fig. 12. Inductive Switching Energy Loss vs. Collector Current Fig. 13. Inductive Switching Energy Loss vs. Junction Temperature 30 12 Eoff Eon 12 Eoff RG = 2Ω , VGE = 15V 25 30 ---10 10 4 TJ = 25ºC 5 0 40 50 60 70 Eoff - MilliJoules Eoff - MilliJoules 6 20 8 I C = 80A 15 6 10 2 5 0 0 80 2 25 35 45 Fig. 14. Inductive Turn-off Switching Times vs. Collector Current t d(off) - - - - 1.6 1.8 1.4 1.6 t f i - Microseconds 1.2 1.0 1.0 0.8 TJ = 125ºC 0.8 0.6 TJ = 25ºC 0.2 30 40 50 60 70 tf i t d(off) - - - - 0.6 1.2 1.0 0.5 I C = 40A, 80A 0.4 0.2 0.6 0.2 0.0 0.4 25 35 45 55 65 75 85 95 105 115 110 42 tr i 100 t d(on) - - - - 30 40 28 20 26 40 38 VCE = 600V 80 36 70 34 I C = 80A 60 32 50 30 40 I C 28 = 40A 30 0 24 40 50 60 IC - Amperes © 2009 IXYS CORPORATION, All Rights Reserved 70 80 t d(on) - Nanoseconds 32 t r i - Nanoseconds 90 TJ = 25ºC, 125ºC t d(on) - - - - RG = 2Ω , VGE = 15V 34 60 30 0.1 125 Fig. 17. Inductive Turn-on Switching Times vs. Junction Temperature t d(on) - Nanoseconds t r i - Nanoseconds 0.7 TJ - Degrees Centigrade RG = 2Ω , VGE = 15V 20 0 125 0.3 36 80 115 VCE = 600V 1.4 80 120 VCE = 600V 105 RG = 2Ω , VGE = 15V Fig. 16. Inductive Turn-on Switching Times vs. Collector Current tr i 95 0.8 IC - Amperes 100 85 0.8 0.4 0.4 20 75 t d(off) - Microseconds 1.2 t d(off) - Microseconds VCE = 600V t f i - Microseconds RG = 2Ω , VGE = 15V 0.6 65 Fig. 15. Inductive Turn-off Switching Times vs. Junction Temperature 1.8 1.4 55 TJ - Degrees Centigrade IC - Amperes tfi 4 I C = 40A Eon - MilliJoules 15 Eon - MilliJoules 8 TJ = 125ºC 1.6 10 VCE = 600V 20 30 ---- RG = 2Ω , VGE = 15V 25 VCE = 600V 20 Eon 26 20 25 35 45 55 65 75 85 95 105 115 24 125 TJ - Degrees Centigrade IXYS REF: G_82N120A3(8T)6-23-09 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.