IXGL75N250

Preliminary Technical Information High Voltage IGBT IXGL75N250 VCES = 2500V = 65A IC90 VCE(sat) ≤ 2.9V For Capacitor Discharge Applications ( Electrically Isolated Tab) ISOPLUS i5-PakTM Symbol Test Conditions Maximum Ratings VCES VCES TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ 2500 2500 V V VGES Continuous ± 20 V VGEM Transient ± 30 V IC25 TC = 25°C 110 A IC90 TC = 90°C 65 A ICM TC = 25°C, VGE = 20V, 1ms 580 A SSOA VGE = 15V, TVJ = 125°C, RG = 1Ω ICM = 200 A (RBSOA) Clamped Inductive Load PC TC = 25°C VCE < 0.8 • VCES 430 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C 300 260 °C °C 2500 V~ 30..170 / 7..36 Nm/lb-in. 8 g TJ TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062 in.) from Case for 10s VISOL 50/60Hz, 1 minute FC Mounting Force with Clip Weight Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) IC = 1mA, VGE = 0V 2500 VGE(th) IC = 4mA, VCE = VGE 3.0 ICES VCE = 0.8 • VCES, VGE = 0V Note 2, TJ = 125°C IGES VCE = 0V, VGE = ±20V VCE(sat) IC IC = 75A, VGE = 15V, Note 1 = 300A, VGE = 25V © 2010 IXYS CORPORATION, All Rights Reserved V 5.0 E C G = Gate E = Emitter Isolated Tab C = Collector Features Very High Peak Current Capability Low Saturation Voltage MOS Gate Turn-On Rugged NPT Structure ISOPLUS i5-PAKTM High Voltage Package - Isolated Back Surface - Enlarged Creepage Torwards Heat-Sink - Enlarged Creepage between High Voltage Pins - Application Friendly PinOut - High Reliability - Industry Standard Outline - UL Registered Applications Characteristic Values Min. Typ. Max. BVCES G Capacitor Discharge Pulser Circuits V 50 μA 5 mA 2.5 4.1 ±200 nA 2.9 V V DS99861B(7/10) IXGL75N250 Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. IC = 60A, VCE = 10V, Note 1 35 58 Cies Coes pF 345 pF 110 Qg tr td(off) tf nC 63 nC 175 nC VCE = 1250V, RG = 1Ω c e1 e1 b3 b2 PIN 1 PIN 2 PIN 3 Tap 4 b1 e = Gate = Emitter = Collector = Electrically Isolated 2500V ns ns 270 ns A 0.190 0.205 4.83 5.21 ns A1 0.102 0.118 2.59 3.00 A2 0.046 0.055 1.17 1.40 b 0.045 0.055 1.14 1.40 b1 0.063 0.072 1.60 1.83 b2 0.058 0.068 1.47 1.73 c 0.020 0.029 0.51 0.74 D 1.020 1.040 25.91 26.42 E 0.770 0.799 19.56 20.29 RthJC Notes: 3 55 455 0.29 °C/W RthCK + 225 Resistive Switching Times IC = 150A, VGE = 15V S 4 1 2 pF 410 IC = 75A, VGE = 15V, VCE = 0.5 • VCES Qgc td(on) E S 9000 VCE = 25V, VGE = 0V, f = 1MHz Cres Qge ISOPLUS i5-PakTM HV (IXGL) Outline 0.15 °C/W 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. 2. Part must be heatsunk for high-temp Ices measurement. SYM INCHES MIN MAX MILLIMETER MIN MAX e 0.150 BSC e1 L 0.450 BSC 0.780 0.820 3.81 BSC L1 0.080 0.102 2.03 2.59 Q 0.210 0.235 5.33 5.97 11.43 BSC 19.81 20.83 Q1 0.490 0.513 12.45 13.03 R 0.150 0.180 3.81 4.57 R1 0.100 0.130 2.54 3.30 S 0.668 0.690 16.97 17.53 T 0.801 0.821 20.34 20.85 U 0.065 0.080 1.65 2.03 PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXGL75N250 Fig. 2. Output Characteristics @ T J = 125ºC Fig. 1. Output Characteristics @ T J = 25ºC 300 VGE = 25V 20V 300 15V VGE = 25V 20V 15V 250 15V 200 10V 200 IC - Amperes IC - Amperes 250 150 10V 150 100 100 50 50 5V 5V 0 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 0 0.5 1 1.5 2 VCE - Volts Fig. 3. Dependence of VCE(sat) on Junction Temperature 3.5 4 4.5 5 5.5 6 8 TJ = 25ºC VGE = 15V 7 I 1.8 C = 300A 6 1.6 VCE - Volts VCE(sat) - Normalized 3 Fig. 4. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage 2.2 2.0 2.5 VCE - Volts 1.4 I C = 150A 1.2 5 I C = 300A 4 150A 1.0 3 0.8 I C = 75A 2 0.6 75A 1 0.4 -50 -25 0 25 50 75 100 125 6 150 8 10 TJ - Degrees Centigrade 12 14 16 18 20 22 24 26 VGE - Volts Fig. 6. Transconductance Fig. 5. Input Admittance 250 120 TJ = - 40ºC 100 g f s - Siemens IC - Amperes 200 150 100 TJ = 125ºC 25ºC - 40ºC 50 25ºC 80 125ºC 60 40 20 0 0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 VGE - Volts © 2010 IXYS CORPORATION, All Rights Reserved 7.5 8.0 8.5 9.0 0 50 100 IC - Amperes 150 200 250 IXGL75N250 Fig. 7. Gate Charge Fig. 8. Capacitance 100,000 16 I C = 75A Capacitance - PicoFarads I G = 10 mA 12 VGE - Volts f = 1MHz VCE = 1000V 14 10 8 6 4 10,000 Cies 1,000 Coes 100 Cres 2 0 10 0 50 100 150 200 250 300 350 400 450 0 5 10 15 QG - NanoCoulombs 20 25 30 35 40 VCE - Volts Fig. 10. Maximum Transient Thermal Impedance Fig. 9. Reverse-Bias Safe Operating Area 1.000 225 200 0.100 150 Z(th)JC - ºC / W IC - Amperes 175 125 100 75 50 TJ = 125ºC 25 RG = 1Ω dv / dt < 10V / ns 0 250 500 750 1000 1250 1500 1750 2000 2250 2500 VCE - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.010 0.001 0.00001 0.0001 0.001 0.01 0.1 Pulse Width - Seconds 1 10 Fig. 12. Resistive Turn-on Rise Time vs. Collector Current Fig. 11. Resistive Turn-on Rise Time vs. Junction Temperature 600 700 VCE = 1250V 500 VCE = 1250V I 500 C TJ = 125ºC = 300A t r - Nanoseconds t r - Nanoseconds RG = 1Ω , VGE = 15V RG = 1Ω , VGE = 15V 600 400 300 I 200 C = 150A 400 300 TJ = 25ºC 200 100 100 0 0 25 35 45 55 65 75 85 95 105 115 75 125 100 125 150 175 TJ - Degrees Centigrade Fig. 13. Resistive Turn-on Switching Times vs. Gate Resistance 800 td(on) - - - - 80 800 75 700 tf 600 VCE = 1250V TJ = 125ºC, VGE = 15V 65 I C = 300A 500 60 I C = 150A 55 t f - Nanoseconds 600 t d(on) - Nanoseconds t r - Nanoseconds 70 400 40 0 5 6 7 8 9 300 I C = 150A I C = 300A 200 10 150 100 25 35 45 55 2000 tf 1600 RG = 1Ω, VGE = 15V td(off) - - - - 480 380 440 360 400 1200 320 1000 280 800 240 t f - Nanoseconds 360 TJ = 125ºC, 25ºC 200 400 160 200 120 0 125 150 175 85 95 105 115 50 125 200 225 IC - Amperes © 2010 IXYS CORPORATION, All Rights Reserved 250 275 80 300 750 tf td(off) - - - - 675 TJ = 125ºC, VGE = 15V 340 600 VCE = 1250V 320 525 I 300 C = 150A, 300A 450 280 375 260 300 240 225 220 150 200 t d(off) - Nanoseconds t d(off) - Nanoseconds VCE = 1250V 1400 t f - Nanoseconds 1800 100 75 Fig. 16. Resistive Turn-off Switching Times vs. Gate Resistance Fig. 15. Resistive Turn-off Switching Times vs. Collector Current 75 65 TJ - Degrees Centigrade RG - Ohms 600 350 200 100 4 400 300 45 100 td(off) - - - - RG = 1Ω, VGE = 15V 250 200 3 300 400 50 2 275 450 500 300 1 250 t d(off ) - Nanoseconds VCE = 1250V 700 225 Fig. 14. Resistive Turn-off Switching Times vs. Junction Temperature 900 tr 200 IC - Amperes 75 1 2 3 4 5 6 7 8 9 10 RG - Ohms IXYS REF: IXG_75N250(9P)87-10-10 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.