IXGN100N170

High Voltage IGBT IXGN100N170 VCES = 1700V = 95A IC90 VCE(sat)  3.0V E Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M VGES VGEM SOT-227B, miniBLOC E153432 Maximum Ratings 1700 1700 V V Continuous Transient ±20 ±30 V V IC25 IC90 ICM TC = 25°C TC = 90°C TC = 25°C, 1ms 160 95 600 A A A SSOA (RBSOA) VGE = 15V, TVJ = 125°C, RG = 1 Clamped Inductive Load ICM = 200 @0.8 • VCES A tsc (SCSOA) VGE = 15V, VCE = 1250V, TJ = 125°C RG = 10, Non Repetitive 10 μs PC TC = 25°C 735 W -55 ... +150 150 -55 ... +150 °C °C °C 2500 3000 V~ V~ 1.5/13 1.3/11.5 Nm/lb.in. Nm/lb.in. 30 g TJ TJM Tstg VISOL 50/60Hz IISOL 1mA Md Mounting Torque Terminal Connection Torque t = 1min t = 1s Weight E G E C G = Gate, C = Collector, E = Emitter  either emitter terminal can be used as Main or Kelvin Emitter Features      Advantages   Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVCES IC = 3mA, VGE = 0V VGE(th) IC = 8mA, VCE = VGE ICES VCE = VCES, VGE = 0V 5.0 IGES VCE = 0V, VGE = 20V 200 VCE(sat) IC 2.5 © 2016 IXYS CORPORATION, All Rights Reserved V 50 A 3 mA TJ = 125C = 100A, VGE = 15V, Note 1  V 3.0 3.0 High Power Density Low Gate Drive Requirement Applications Characteristic Values Min. Typ. Max. 1700 Optimized for Low Conduction and Switching Losses Isolation Voltage 2500V~ Short Circuit Capability International Standard Package High Current Handling Capability      Power Inverters UPS Motor Drives SMPS PFC Circuits Welding Machines nA V DS100091B(10/16) IXGN100N170 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 36 IC = 60A, VCE = 10V, Note 1 Cies Coes Cres VCE = 25V, VGE = 0V, f = 1MHz Qg Qge Qgc IC = 100A, VGE = 15V, VCE = 0.5 • VCES td(on) tr td(off) tf Resistive load, TJ = 25°C IC = 100A, VGE = 15V VCE = 0.5 • VCES, RG = 1 td(on) tr Resistive load, TJ = 125°C IC = 100A, VGE = 15V td(off) tf VCE = 0.5 • VCES, RG = 1 RthJC RthCS 64 S 9200 455 150 pF pF pF 425 65 186 nC nC nC 35 192 285 395 ns ns ns ns 35 250 ns ns 285 435 ns ns 0.05 0.17 °C/W °C/W 1. Pulse test, t  300μs, duty cycle, d  2%. Note: SOT-227B (IXGN) OUTLINE J M4-7 NUT (4 PLACES) A B D MN C S L E F G H O U IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXGN100N170 Fig. 1. Output Characteristics @ TJ = 25ºC Fig. 2. Extended Output Characteristics @ TJ = 25ºC 200 350 VGE = 15V 13V 11V 150 250 I C - Amperes 9V I C - Amperes VGE = 15V 13V 11V 300 100 7V 9V 200 150 100 50 7V 50 5V 5V 0 0 0 0.5 1 1.5 2 2.5 3 3.5 4 0 2 3 5 6 7 8 Fig. 3. Output Characteristics @ TJ = 125ºC Fig. 4. Dependence of VCE(sat) on Junction Temperature 2.0 VGE = 15V 13V 11V V CE(sat) - Normalized 9V 100 7V 50 9 10 VGE = 15V 1.8 150 I C =200A 1.6 1.4 I C = 100A 1.2 1.0 0.8 5V I C = 50A 0 0.6 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 -50 -25 0 VCE - Volts 25 50 75 100 125 150 7.0 7.5 8.0 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage 6.5 Fig. 6. Input Admittance 180 160 TJ = 25ºC 5.5 140 4.5 I C - Amperes VCE - Volts 4 VCE - Volts 200 I C - Amperes 1 VCE - Volts I C = 200A 3.5 100A 120 100 80 TJ = - 40ºC 25ºC 125ºC 60 40 2.5 50A 20 1.5 0 5 6 7 8 9 10 11 12 VGE - Volts © 2016 IXYS CORPORATION, All Rights Reserved 13 14 15 4.0 4.5 5.0 5.5 6.0 VGE - Volts 6.5 IXGN100N170 Fig. 8. Gate Charge Fig. 7. Transconductance 110 16 100 TJ = - 40ºC 14 VCE = 850V 12 I G = 10mA I C = 100A 90 25ºC 70 V GE - Volts g f s - Siemens 80 125ºC 60 50 40 30 10 8 6 4 20 2 10 0 0 0 20 40 60 80 100 120 140 160 180 200 0 50 100 150 I C - Amperes 200 250 300 350 400 450 QG - NanoCoulombs Fig. 9. Reverse-Bias Safe Operating Area Fig. 10. Capacitance 100,000 f = 1 MHz Capacitance - PicoFarads 200 I C - Amperes 160 120 80 TJ = 125ºC 40 Cies 10,000 Coes 1,000 RG = 1Ω dv / dt < 10V / ns Cres 0 100 200 400 600 800 1000 1200 1400 1600 1800 0 5 10 VCE - Volts 15 20 25 30 35 40 VCE - Volts Fig. 11. Maximum Transient Thermal Impedance Z (th)JC - K / W 1 0.1 0.01 0.001 0.0001 0.001 0.01 0.1 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 IXGN100N170 Fig. 12. Resistive Turn-on Rise Time vs. Junction Temperature Fig. 13. Resistive Turn-on Rise Time vs. Collector Current 320 320 RG = 1Ω, VGE = 15V RG = 1Ω, VGE = 15V 280 VCE = 850V VCE = 850V 240 240 t r - Nanoseconds t r - Nanoseconds 280 I C = 100A 200 160 TJ = 125ºC 200 160 TJ = 25ºC 120 120 I C = 50A 80 80 40 40 25 35 45 55 65 75 85 95 105 115 50 125 55 60 65 70 450 td(on) 900 55 800 50 45 I C = 100A 40 I C = 50A 150 35 t f - Nanoseconds t r - Nanoseconds 300 200 95 100 td(off) 380 RG = 1Ω, VGE = 15V VCE = 850V 360 700 340 I C = 50A 600 320 500 300 400 280 t d(off) - Nanoseconds 60 t d(on) - Nanoseconds VCE = 850V 250 90 400 tf TJ = 125ºC, VGE = 15V 350 85 1000 65 tr 80 Fig. 15. Resistive Turn-off Switching Times vs. Junction Temperature Fig. 14. Resistive Turn-on Switching Times vs. Gate Resistance 400 75 I C - Amperes TJ - Degrees Centigrade I C = 100A 100 50 1 2 3 4 5 6 7 8 9 30 300 25 200 260 25 10 35 45 55 Fig. 16. Resistive Turn-off Switching Times vs. Collector Current tf 900 td(off) 420 1100 400 1000 340 TJ = 125ºC 500 320 TJ = 25ºC 300 300 200 60 65 70 75 80 115 240 125 900 tf 85 I C - Amperes © 2016 IXYS CORPORATION, All Rights Reserved 90 td(off) 800 95 VCE = 850V 900 t f - Nanoseconds 600 55 105 700 800 600 700 500 I C = 50A 600 400 I C = 100A 500 280 400 260 100 300 300 t d(off) - Nanoseconds 360 t d(off) - Nanoseconds t f - Nanoseconds 380 700 50 95 TJ = 125ºC, VGE = 15V VCE = 850V 400 85 Fig. 17. Resistive Turn-off Switching Times vs. Gate Resistance RG = 1Ω, VGE = 15V 800 75 TJ - Degrees Centigrade RG - Ohms 1000 65 200 100 1 2 3 4 5 6 7 8 9 10 RG - Ohms IXYS REF: IXG_100N170(9P)01-26-12-A Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. 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