IXGN120N60A3D1

IXGN120N60A3 IXGN120N60A3D1 GenX3TM 600V IGBT VCES = 600V IC110 = 120A VCE(sat) ≤ 1.35V Ultra-low Vsat PT IGBTs for up to 5kHz switching SOT-227B, miniBLOC E153432 E E 60A3 G 60A3D1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 IC110 TC = 25°C TC = 110°C 200 120 A A IF110 ICM TC = 110°C TC = 25°C, 1ms 36 800 A A SSOA VGE = 15V, TVJ = 125°C, RG = 1.5Ω ICM = 200 A (RBSOA) Clamped Inductive Load @ VCES < 600 V PC TC = 25°C 595 W IXGN120N60A3D1 -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C 2500 3000 V~ V~ 1.5/13 1.3/11.5 Nm/lb.in. Nm/lb.in. 30 g TJ VISOL 50/60Hz IISOL ≤ 1mA t = 1min t = 1s Md Mounting Torque Terminal Connection Torque (M4) Weight Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) VGE(th) IC ICES VCE = VCES, VGE = 0V, Note 3 TJ = 125°C IGES VCE = 0V, VGE = ±20V VCE(sat) IC 3.0 120N60A3 120N60A3D1 120N60A3 120N60A3D1 = 100A, VGE = 15V, Note 1 © 2009 IXYS CORPORATION, All Rights Reserved 5.0 V 50 650 1 5 μA μA mA mA ±400 nA 1.20 1.35 G = Gate, C = Collector, E = Emitter Either Emitter Terminal can be used as Main or Kelvin Emitter Features Optimized for Low Conduction Losses Square RBSOA Anti-Parallel Ultra Fast Diode International Standard Package miniBLOC UL Recognized Aluminium Nitride Isolation Isolation Voltage 3000 V~ Low VCE(sat) for Minimum On-State Advantages High Power Density Low Gate Drive Requirement Applications Characteristic Values Min. Typ. Max. = 500μA, VCE = VGE E C V Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts Inrush Current Protection Circuits High Power Density DS99927B(02/09) IXGN120N60A3 IXGN120N60A3D1 Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) gfs IC Characteristic Values Min. Typ. Max. = 60A, VCE = 10V, Note 1 65 Cies Coes SOT-227B miniBLOC 108 S 14.8 nF VCE = 25V, VGE = 0V, f = 1MHz Cres 800 pF 140 pF 450 nC 67 nC Qgc 130 nC td(on) 39 ns Qg(on) Qge IC = IC110, VGE = 15V, VCE = 0.5 • VCES 82 ns IC = 100A, VGE = 15V 2.7 mJ 295 ns VCE = 480V, RG = 1.5Ω, Note 2 260 ns Eoff 6.6 mJ td(on) 40 ns tri Eon td(off) tfi tri Eon td(off) tfi Inductive Load, TJ = 25°°C 83 ns 3.5 mJ 420 ns 410 ns 10.4 mJ Inductive Load, TJ = 125°°C IC = 100A, VGE = 15V VCE = 480V, RG = 1.5Ω, Note 2 Eoff 0.21 °C/W RthJC °C/W 0.05 RthCK Reverse Diode (FRED) Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) VF IRM trr IF = 60A, Note 1 VGE= 0V Characteristic Values Min Typ. Max. TJ = 150°C 2.1 V V 8.0 175 A ns 1.4 IF = 60A, VGE = 0V, -diF/dt = 100A/μs VR=300V, TJ = 100°C 0.85 °C/W RthJC Note: 1. Pulse Test, t ≤ 300μs; Duty Cycle, d ≤ 2%. 2. Remarks: Switching Times may Increase for VCE (Clamp) > 0.8 VCES, Higher TJ or Increased RG. 3. Parts must be HeatSunk for High Temperature ICES Measurements. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXGN120N60A3 IXGN120N60A3D1 Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 200 350 VGE = 15V 13V 11V 180 160 9V 250 140 7V 120 IC - Amperes IC - Amperes VGE = 15V 11V 9V 300 100 80 60 200 7V 150 100 40 50 20 5V 5V 0 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0 1 2 3 5 6 7 8 Fig. 4. Dependence of VCE(sat) on Junction Temperature Fig. 3. Output Characteristics @ 125ºC 200 1.4 VGE = 15V 13V 11V 9V 160 VGE = 15V 1.3 VCE(sat) - Normalized 180 140 IC - Amperes 4 VCE - Volts VCE - Volts 120 100 7V 80 60 1.2 I C = 200A I C = 100A I C = 50A 1.1 1.0 0.9 40 0.8 5V 20 0 0.7 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 -50 1.8 -25 VCE - Volts 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance 200 3.0 2.8 180 TJ = 25ºC 2.6 160 2.4 I 2.2 2.0 C TJ = - 40ºC 25ºC 125ºC 140 = 200A 100A 50A IC - Amperes VCE - Volts 0 1.8 1.6 120 100 80 60 1.4 40 1.2 20 1.0 0.8 0 5 6 7 8 9 10 11 VGE - Volts © 2009 IXYS CORPORATION, All Rights Reserved 12 13 14 15 4.0 4.5 5.0 5.5 6.0 VGE - Volts 6.5 7.0 7.5 IXGN120N60A3 IXGN120N60A3D1 Fig. 8. Gate Charge Fig. 7. Transconductance 200 16 TJ = - 40ºC 180 VCE = 300V 14 I C = 120A I G = 10mA 12 140 25ºC 120 VGE - Volts g f s - Siemens 160 125ºC 100 80 10 8 6 60 4 40 2 20 0 0 0 20 40 60 80 100 120 140 160 180 200 0 220 100 150 200 250 300 350 400 450 QG - NanoCoulombs Fig. 9. Capacitance Fig. 10. Reverse-Bias Safe Operating Area 500 220 100,000 200 f = 1 MHz 180 Cies 160 10,000 IC - Amperes Capacitance - PicoFarads 50 IC - Amperes Coes 1,000 Cres 5 10 15 20 25 120 100 80 60 TJ = 125ºC 40 RG = 1.5Ω dV / dt < 10V / ns 20 0 100 100 0 140 30 35 40 150 200 250 300 VCE - Volts 350 400 450 500 550 600 650 VCE - Volts Fig. 11. Maximum Transient Thermal Impedance Z(th)JC - ºC / W 1.000 0.100 0.010 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: G_120N60A3(86)02-02-09-A IXGN120N60A3 IXGN120N60A3D1 Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance Fig. 13. Inductive Switching Energy Loss vs. Collector Current 12 5.0 11 4.5 C 4.0 --- 7 2.5 2.0 I C = 50A 5 6 7 8 9 3.0 TJ = 125ºC 6 2.5 5 1.0 1.0 2 0.5 0.5 1 50 10 55 60 65 70 RG - Ohms 12 Eoff RG = 1.5Ω , VGE = 15V 6 2.5 5 2.0 4 1.5 1.0 I C = 50A 35 45 55 65 75 85 tf td(off) - - - - VCE = 480V 425 800 400 700 I 375 I C 95 105 115 600 = 50A 500 325 400 300 1 2 3 4 475 450 425 400 400 td(off) - - - - 375 350 VCE = 480V 325 300 300 275 TJ = 25ºC 250 225 60 65 70 75 80 8 9 10 85 IC - Amperes © 2009 IXYS CORPORATION, All Rights Reserved 90 95 275 250 225 100 475 425 tf td(off) - - - - 400 VCE = 480V 450 RG = 1.5Ω , VGE = 15V 375 I C 425 400 = 100A, 50A 350 375 325 350 300 325 275 300 250 275 225 25 35 45 55 65 75 85 95 TJ - Degrees Centigrade 105 115 250 125 t d(off) - Nanoseconds 425 t f - Nanoseconds TJ = 125ºC 55 7 450 t d(off) - Nanoseconds t f - Nanoseconds 450 50 6 Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature 500 325 5 RG - Ohms 475 RG = 1.5Ω , VGE = 15V = 100A 300 0.0 125 500 tf C 350 Fig. 16. Inductive Turn-off Switching Times vs. Collector Current 350 900 TJ = 125ºC, VGE = 15V TJ - Degrees Centigrade 375 0.0 100 0.5 1 25 t f - Nanoseconds 3.0 Eon - MilliJoules 3.5 I C = 100A 7 2 95 t d(off) - Nanoseconds 4.0 3 90 1000 450 4.5 8 85 475 5.0 ---- VCE = 480V 9 Eoff - MilliJoules Eon 80 Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance 5.5 10 75 IC - Amperes Fig. 14. Inductive Switching Energy Loss vs. Junction Temperature 11 2.0 TJ = 25ºC 1.5 4 4 3.5 7 3 1.5 3 8 4 5 3 5.0 ---- - MilliJoules VCE = 480V - MilliJoules 3.0 Eon on 3.5 TJ = 125ºC , VGE = 15V 2 4.5 VCE = 480V 9 on Eon - Eoff 8 1 RG = 1.5Ω , VGE = 15V E 9 6 Eoff 10 4.0 = 100A 5.5 11 Eoff - MilliJoules I E Eoff - MilliJoules 10 12 IXGN120N60A3 IXGN120N60A3D1 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance 160 td(on) - - - - 80 TJ = 125ºC, VGE = 15V I 100 60 80 50 I 60 C = 50A 40 40 30 20 2 3 4 5 6 7 8 9 RG = 1.5Ω , VGE = 15V 41 VCE = 480V 40 80 39 TJ = 25ºC, 125ºC 70 38 60 37 50 36 40 35 30 34 20 33 10 32 0 20 1 90 42 td(on) - - - - 50 10 55 60 65 70 75 80 85 90 95 t d(on) - Nanoseconds 70 tr 100 = 100A C t d(on) - Nanoseconds VCE = 480V 120 43 110 t r - Nanoseconds tr 140 t r - Nanoseconds 120 90 31 100 IC - Amperes RG - Ohms Fig. 20. Inductive Turn-on Switching Times vs. Junction Temperature 110 48 tr 100 90 46 44 VCE = 480V 80 42 I C = 100A 70 40 60 38 50 36 40 34 30 I C 32 = 50A 20 25 35 45 55 65 75 85 95 105 t d(on) - Nanoseconds t r - Nanoseconds td(on) - - - - RG = 1.5Ω , VGE = 15V 115 30 125 TJ - Degrees Centigrade IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: G_120N60A3(86)02-11-09-B IXGN120N60A3 IXGN120N60A3D1 IF 160 A 140 4000 120 3000 80 TVJ= 100°C VR = 300V nC TVJ= 150°C 100°C 25°C 80 IF= 120A, 60A, 30A 60 IRM Qr 100 TVJ= 100°C VR = 300V A IF= 120A, 60A, 30A 2000 40 60 40 1000 20 20 0 0 1 2 0 100 V A/μs 1000 -diF /dt VF Fig. 21. Forward Current IF Versus VF Fig. 22. Reverse Recorvery Charge Qr Versus -diF/dt 2.0 ns 130 TVJ= 100°C VR = 300V 400 600 A/μs 800 -diF /dt 1000 1.6 TVJ= 100°C IF = 60A μs 1.2 trr 120 1.0 200 Fig. 23. Peak Reverse Current IRM Versus -diF/dt V V FR 15 trr Kf 0 20 140 1.5 0 tfr VFR IF= 30A, 60A, 120A 110 10 0.8 5 0.4 IRM 100 0.5 90 QRM 0.0 0 40 80 120 °C 160 80 0 200 400 T VJ 600 800 A/μs 1000 0 0 200 400 -diF /dt Fig. 24. Dynamic Paraments Qr, IRM Versus TvJ Fig. 25. Recorvery Time trr Versus -diF/dt 0.0 600 A/μs 800 1000 diF /dt Fig. 26. Peak Forward Voltage VRM and trr Versus -diF/dt 1 1.000 K/W Z(th)JC [ ºC / W ] 0.1 Z thJC 0.100 0.01 0.001 0.010 0.0001 0.00001 0.001 0.0001 DSEP 2x61-06A 0.0001 0.001 0.001 0.01 0.1 0.01 s t Pulse Width [ s ] 1 0.1 1 10 Fig. 27. Maximum Transient Thermal Impedance (for Diode) © 2009 IXYS CORPORATION, All Rights Reserved IXYS REF: G_120N60A3(86)02-11-09-B Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.