IXGN200N170

Advance Technical Information IXGN200N170 High Voltage IGBT VCES = = IC90 VCE(sat)  tfi(typ) = 1700V 160A 2.6V 535ns E SOT-227B, miniBLOC E153432 Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M VGES VGEM Continuous Transient IC25 ILRMS IC90 ICM TC = 25°C (Chip Capability) Terminal Current Limit TC = 90°C TC = 25°C, 1ms SSOA (RBSOA) VGE = 15V, TVJ = 125°C, RG = 1 Clamped Inductive Load PC TC = 25°C TJ TJM Tstg VISOL Md 50/60Hz IISOL 1mA E Maximum Ratings t = 1min t = 1s Mounting Torque Terminal Connection Torque Weight 1700 1700 V V ±20 ±30 V V 280 200 160 1050 A A A A ICM = 300 1360 A V 1250 W -55 ... +150 150 -55 ... +150 °C °C °C 2500 3000 V~ V~ 1.5/13 1.3/11.5 Nm/lb.in Nm/lb.in 30 g G E C G = Gate, C = Collector, E = Emitter  either emitter terminal can be used as Main or Kelvin Emitter Features     Advantages   Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) IC = 3mA, VGE = 0V 1700 VGE(th) IC = 1mA, VCE = VGE 3.5 ICES VCE = VCES, VGE = 0V V VCE = 0V, VGE = 20V VCE(sat) IC = 100A, VGE = 15V, Note 1 TJ = 125C © 2016 IXYS CORPORATION, All Rights Reserved V 25 A 5 mA TJ = 125C IGES   5.5 200 2.1 2.5 2.6 High Power Density Low Gate Drive Requirement Applications Characteristic Values Min. Typ. Max. BVCES miniBLOC, with Aluminium Nitride Isolation International Standard Package Isolation Voltage 2500V~ High Current Handling Capability     Power Inverters UPS Motor Drives SMPS PFC Circuits Welding Machines nA V V DS100718(4/16) IXGN200N170 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 50 IC = 60A, VCE = 10V, Note 1 Cies Coes Cres VCE = 25V, VGE = 0V, f = 1MHz Qg(on) Qge Qgc IC = 200A0, VGE = 15V, VCE = 0.5 • VCES td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff Inductive load, TJ = 25°C IC = 100A, VGE = 15V VCE = 0.5 • VCES, RG = 1 Note 2 Notes: 82 S 12.5 580 220 nF pF pF 540 nC 78 nC 265 nC 37 133 28 320 535 30 ns ns mJ ns ns mJ 40 143 31 430 610 44 ns ns mJ ns ns mJ 0.05 0.10 °C/W °C/W Inductive load, TJ = 125°C IC = 100A, VGE = 15V VCE = 0.5 • VCES, RG = 1 Note 2 RthJC RthCS SOT-227B miniBLOC (IXGN) 1. Pulse test, t  300μs, duty cycle, d  2%. 2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXGN200N170 Fig. 1. Extended Output Characteristics @ TJ = 25ºC Fig. 2. Output Characteristics @ TJ = 125ºC 300 VGE = 15V 12V 10V I C - Amperes 250 VGE = 15V 13V 11V 10V 9V 250 I C - Amperes 300 200 8V 150 9V 200 8V 150 7V 100 100 7V 50 50 6V 6V 5V 0 0 0 1 2 3 4 5 6 7 8 9 0 10 1 2 3 Fig. 3. Dependence of VCE(sat) on Junction Temperature 1.8 4 5 6 VCE - Volts VCE - Volts Fig. 4. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage 8 VGE = 15V TJ = 25ºC 7 1.6 6 V CE - Volts V CE(sat) - Normalized I C = 300A 1.4 1.2 1.0 I C = 200A 5 I C = 300A 4 200A 0.8 3 I C = 100A 0.6 2 0.4 100A 1 -50 -25 0 25 50 75 100 125 150 7 8 9 10 11 12 13 14 15 VGE - Volts TJ - Degrees Centigrade Fig. 6. Transconductance Fig. 5. Input Admittance 160 200 TJ = - 40ºC 140 120 150 g f s - Siemens I C - Amperes 25ºC 100 TJ = 125ºC 25ºC - 40ºC 100 125ºC 80 60 40 50 20 0 0 4.0 4.5 5.0 5.5 6.0 6.5 7.0 VGE - Volts © 2016 IXYS CORPORATION, All Rights Reserved 7.5 8.0 8.5 0 20 40 60 80 100 120 I C - Amperes 140 160 180 200 220 IXGN200N170 Fig. 8. Capacitance Fig. 7. Gate Charge 100,000 16 VCE = 850V 14 Capacitance - PicoFarads I G = 10mA 12 V GE - Volts f = 1 MHz I C = 200A 10 8 6 4 10,000 Cies Coes 1,000 2 Cres 100 0 0 50 100 150 200 250 300 350 400 450 500 0 550 5 10 15 20 25 30 35 40 VCE - Volts QG - NanoCoulombs Fig. 10. Maximum Transient Thermal Impedance Fig. 9. Reverse-Bias Safe Operating Area 1 350 300 0.1 Z (th)JC - K / W I C - Amperes 250 200 150 100 0.01 0.001 TJ = 125ºC RG = 1Ω dv / dt < 10V / ns 50 0 250 500 750 1000 1250 1500 0.0001 0.00001 VCE - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.0001 0.001 0.01 0.1 Pulse Width - Seconds 1 10 IXGN200N170 Fig. 11. Inductive Switching Energy Loss vs. Gate Resistance 60 Eoff 55 Eon 45 55 40 50 35 45 Fig. 12. Inductive Switching Energy Loss vs. Collector Current Eoff E off - MilliJoules 40 25 35 20 30 I C = 50A 25 20 1 2 3 4 5 6 7 8 9 VCE = 850V 28 TJ = 125ºC 40 20 30 15 25 12 10 20 8 5 15 50 10 60 70 Eon RG = 1ΩVGE = 15V 50 VCE = 850V tfi 36 TJ = 125ºC, VGE = 15V 32 35 24 20 I C = 50A 25 16 20 12 15 8 10 75 100 td(off) tfi 700 700 I C = 100A 600 4 125 500 500 300 1 2 3 4 800 1000 700 900 6 7 8 tfi 9 10 800 td(off) RG = 1Ω, VGE = 15V 700 VCE = 850V TJ = 125ºC 600 500 400 800 600 I C = 50A 700 500 600 400 I C = 100A 500 TJ = 25ºC 400 50 60 70 80 I C - Amperes © 2016 IXYS CORPORATION, All Rights Reserved 90 300 500 200 100 400 300 25 50 75 TJ - Degrees Centigrade 100 200 125 t d(off) - Nanoseconds 600 t d(off) - Nanoseconds 800 t f i - Nanoseconds VCE = 850V t f i - Nanoseconds 5 Fig. 16. Inductive Turn-off Switching Times vs. Junction Temperature td(off) RG = 1Ω, VGE = 15V 700 900 RG - Ohms Fig. 15. Inductive Turn-off Switching Times vs. Collector Current 900 1100 I C = 50A 800 TJ - Degrees Centigrade 1000 1300 VCE = 850V 28 30 900 E on - MilliJoules E off - MilliJoules 40 40 50 4 100 90 t d(off) - Nanoseconds I C = 100A 45 25 80 Fig. 14. Inductive Turn-off Switching Times vs. Gate Resistance 1000 44 t f i - Nanoseconds Eoff 16 TJ = 25ºC I C - Amperes Fig. 13. Inductive Switching Energy Loss vs. Junction Temperature 55 24 35 RG - Ohms 60 32 E on - MilliJoules 30 E on - MilliJoules I C = 100A 45 E off - MilliJoules VCE = 850V Eon RG = 1ΩVGE = 15V TJ = 125ºC , VGE = 15V 50 36 IXGN200N170 200 tri 180 160 VCE = 850V I C = 100A 120 90 180 80 160 70 140 60 100 50 80 40 I C = 50A 40 20 10 20 0 0 4 5 6 7 8 9 tri TJ = 25ºC 36 33 60 70 80 90 30 100 I C - Amperes Fig. 19. Inductive Turn-on Switching Times vs. Junction Temperature 175 39 50 10 RG - Ohms 200 TJ = 125ºC 60 20 3 42 VCE = 850V 80 40 2 45 td(on) 100 30 1 tri RG = 1Ω, VGE = 15V 120 60 0 Fig. 18. Inductive Turn-on Switching Times vs. Collector Current t d(on) - Nanoseconds 140 200 t d(on) - Nanoseconds t r i - Nanoseconds td(on) TJ = 125ºC, VGE = 15V 100 t r i - Nanoseconds Fig. 17. Inductive Turn-on Switching Times vs. Gate Resistance td(on) 46 44 RG = 1Ω, VGE = 15V VCE = 850V 42 I C = 100A 125 40 100 38 75 36 I C = 50A 50 25 34 t d(on) - Nanoseconds t r i - Nanoseconds 150 32 0 25 50 75 100 30 125 TJ - Degrees Centigrade IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: IXG_200N170 (9M) 4-21-16 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.