IXGN200N60A

HiPerFASTTM IGBT IXGN 200N60 IXGN 200N60A VCES IC25 VCE(sat) 600 V 600 V 200 A 200 A 2.5 V 2.7 V E Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 200 A IC90 TC = 90°C 100 A ICM TC = 25°C, 1 ms 300 A SSOA (RBSOA) VGE = 15 V, TVJ = 125°C, RG = 22 W Clamped inductive load, L = 30 mH ICM = 100 @ 0.8 VCES A PC TC = 25°C 600 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C 2500 3000 V~ V~ TJ SOT-227B, miniBLOC E G E C G = Gate, C = Collector, E = Emitter  either emitter terminal can be used as Main or Kelvin Emitter Features International standard package miniBLOC (ISOTOP compatible) Aluminium nitride isolation - high power dissipation Isolation voltage 3000 V~ Very high current, fast switching IGBT Low VCE(sat) - for minimum on-state conduction losses MOS Gate turn-on - drive simplicity Low collector-to-case capacitance (< 50 pF) Low package inductance (< 5 nH) - easy to drive and to protect ● ● VISOL Md 50/60 Hz IISOL £ 1 mA t = 1 min t=1s Mounting torque Terminal connection torque (M4) 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. Weight 30 g ● ● ● ● ● ● Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Applications AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switch-mode and resonant-mode power supplies ● BVCES IC = 250 mA, VGE = 0 V 600 VGE(th) IC = 10 mA, VCE = VGE 2.5 ICES VCE = 0.8 • VCES VGE = 0 V IGES VCE = 0 V, VGE = ±20 V VCE(sat) IC V ● ● TJ = 25°C TJ = 125°C 6 V 200 2 mA mA ±400 nA 2.5 2.7 V V ● ● Advantages Easy to mount with 2 screws Space savings High power density ● = IC90, VGE = 15 V 200N60 200N60A IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved ● ● 92776I (1/98) 1-4 IXGN200N60 Symbol Test Conditions gfs IC Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. = 60 A; VCE = 10 V, 40 57 S 9000 pF IXGN200N60A miniBLOC, SOT-227 B Pulse test, t £ 300 ms, duty cycle £ 2 % C ies 600 pF C res Coes 305 pF Qg 465 nC 52 nC Qgc 228 nC td(on) 100 ns Qge VCE = 25 V, VGE = 0 V, f = 1 MHz IC = IC90, VGE = 15 V, VCE = 0.5 VCES M4 screws (4x) supplied Dim. Millimeter Min. Max. Inches Min. Max. A B 31.50 7.80 31.88 8.20 1.240 0.307 1.255 0.323 C D 4.09 4.09 4.29 4.29 0.161 0.161 0.169 0.169 t ri Inductive load, TJ = 25°C 100 ns Eon IC = IC90, VGE = 15 V, L = 30 mH, VCE = 0.8 VCES, RG = Roff = 2.4 W 2.4 mJ E F 4.09 14.91 4.29 15.11 0.161 0.587 0.169 0.595 td(off) tfi Eoff Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG 200N60 800 1100 ns G H 30.12 38.00 30.30 38.23 1.186 1.496 1.193 1.505 200N60A 700 950 ns J K 11.68 8.92 12.22 9.60 0.460 0.351 0.481 0.378 L M 0.76 12.60 0.84 12.85 0.030 0.496 0.033 0.506 N O 25.15 1.98 25.42 2.13 0.990 0.078 1.001 0.084 P Q 4.95 26.54 5.97 26.90 0.195 1.045 0.235 1.059 R S 3.94 4.72 4.42 4.85 0.155 0.186 0.174 0.191 T U 24.59 -0.05 25.07 0.1 0.968 -0.002 0.987 0.004 200N60 350 500 ns 200N60A 200 280 ns 200N60 14.4 mJ 200N60A 9.6 mJ ns td(on) Inductive load, TJ = 125°C (IXGN 200N60A) 100 t ri IC = IC90, VGE = 15 V, L = 30 mH 200 ns Eon VCE = 0.8 VCES, RG = Roff = 2.4 W 4.8 mJ td(off) Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG 780 ns 250 ns 14.4 mJ tfi Eoff 0.21 K/W RthJC RthCK © 2000 IXYS All rights reserved 0.05 K/W IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-4 IXGN200N60 400 200 9V 120 80 40 11V 240 160 9V 7V 5V 0 1 2 13V 80 7V 0 VGE = 15V 320 IC - Amperes 160 IC - Amperes TJ = 25°C VGE = 15V 13V 11V TJ = 25°C 3 4 0 0 5 2 4 6 8 10 VCE - Volts VCE - Volts Fig. 1. Saturation Voltage Characteristics Fig. 2. Extended Output Characteristics 1.4 200 TJ = 125°C VGE = 15V VCE (sat) - Normalized VGE = 15V 13V 11V 160 IC - Amperes IXGN200N60A 9V 120 80 7V 40 1.2 IC = 200A 1.0 IC = 100A 0.8 0.6 5V 0.4 25 0 0 1 2 3 4 5 50 75 VCE - Volts 100 125 150 TJ - Degrees C Fig. 3. Saturation Voltage Characteristics Fig. 4. Temperature Dependence of VCE(sat) 160 VCE = 10V f = 1Mhz Capacitance - pF IC - Amperes 120 80 TJ = 125°C 40 10000 Ciss 1000 Coss Crss TJ = 25°C 100 0 0 2 4 6 8 VGE - Volts Fig. 5. Turn-off Safe Operating Area © 2000 IXYS All rights reserved 10 12 14 0 5 10 15 20 25 30 35 40 VCE-Volts Fig. 6. Temperature Dependence of BVCES & VGE(th) 3-4 IXGN200N60 10 20 20 E(ON) - millijoules 12 E(ON) IC = 200A 16 24 12 18 E(OFF) 8 4 8 2 4 4 0 0 250 0 E(ON) IC = 100A E(ON) IC = 50A 12 E(OFF) E(OFF) - millijoules E(OFF) 6 E(OFF) - milliJoules 16 E(ON) - millijoules RG = 4.7
30 E(OFF) TJ = 125°C TJ = 125°C 8 IXGN200N60A 6 E(ON) 0 50 100 150 200 0 10 IC - Amperes 30 40 50 0 60 RG - Ohms Fig. 8. Dependence of tfi and EOFF on RG. Fig. 7. Dependence of tfi and EOFF on IC. 400 18 VCE = 300V IC = 50A 100 15 TJ = 125°C IC - Amperes VGE - Volts 20 12 9 6 RG = 4.7
dV/dt < 5V/ns 10 1 3 0.1 0 0 100 200 300 400 500 600 0 100 200 300 400 500 600 VCE - Volts Qg - nanocoulombs Fig. 9. Gate Charge Fig. 10. Junction Capacitance Curves ZthJC (K/W) 1 0.1 0.01 0.001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds Fig. 11. Transient Thermal Resistance © 2000 IXYS All rights reserved 4-4