IXGN400N30A3

IXGN400N30A3 GenX3TM 300V IGBT Ultra-Low-Vsat PT IGBT for up to 10kHz Switching VCES = 300V IC25 = 400A VCE(sat) ≤ 1.15V E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 300 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 300 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 IC110 ILRMS ICM TC = 25°C (Chip Capability) TC = 110°C Terminal Current Limit TC = 25°C, 1ms 400 200 200 1200 A A A A SSOA VGE = 15V, TVJ = 125°C, RG = 1Ω ICM = 400 A (RBSOA) Clamped Inductive Load @ 0.8 • VCES V PC TC = 25°C 735 W TJ -55 ... +150 °C TJM Tstg 150 -55 ... +150 °C °C 2500 3000 V~ V~ 1.5/13 1.3/11.5 Nm/lb.in. Nm/lb.in. 30 g VISOL 50/60Hz IISOL ≤ 1mA Md Mounting Torque Terminal Connection Torque (M4) t = 1min t = 1s Weight Ec G Ec C G = Gate, C = Collector, E = Emitter cEither Emitter Terminal Can Be Used as Main or Kelvin Emitter Features z z z z Optimized for Low Conduction Losses High Current Capability International Standard Package miniBLOC, with Aluminium Nitride Isolation Advantages z z High Power Density Low Gate Drive Requirement Applications Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVCES IC = 1mA, VGE = 0V 300 VGE(th) IC = 4mA, VCE = VGE 3.0 ICES VCE = VCES, VGE = 0V VCE = 0V, VGE = ±20V VCE(sat) IC IC = 100A, VGE = 15V, Note 1 = 400A © 2009 IXYS CORPORATION, All Rights Reserved z V 5.0 TJ = 125°C IGES z V z z 50 μA z 2 mA z ±400 nA 1.15 1.70 z z z Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts Inrush Current Protection Circuits V V DS99592B(7/09) IXGN400N30A3 Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 100 IC = 60A, VCE = 10V, Note 1 170 S 19 nF Cies Coes VCE = 25V, VGE = 0V, f = 1MHz Cres Qg(on) Qge td(on) tr td(off) tf td(on) tr td(off) tf 1350 pF 190 pF 560 nC 83 C 185 nC 45 ns IC = 100V, VGE = 15V, VCE = 0.5 • VCES Qgc Resistive Load, TJ = 25°°C IC = 100A, VGE = 15V VCE = 0.8 • VCES, RG = 1Ω 45 ns 210 ns 107 ns 47 ns Resistive Load, TJ = 125°C IC = 100A, VGE = 15V VCE = 0.8 • VCES, RG = 1Ω SOT-227B miniBLOC (IXGN) 53 ns 240 ns 315 ns 0.17 °C/W RthJC RthCK 0.05 °C/W Note 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXGN400N30A3 Fig. 1. Output Characteristics Fig. 2. Output Characteristics @ T J = 25ºC 350 VGE = 15V 11V 9V 300 VGE = 15V 11V 9V 250 200 IC - Amperes 250 IC - Amperes @ T J = 125ºC 300 7V 150 200 7V 150 100 100 5V 50 50 5V 0 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 0.0 2.4 0.2 0.4 0.6 VCE - Volts 0.8 1.0 1.2 1.4 1.8 14 15 Fig. 4. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 3. Dependence of VCE(sat) on Junction Temperature 3.2 1.3 TJ = 25ºC VGE = 15V 2.8 1.2 I C = 300A I 2.4 1.1 1.0 I C VCE - Volts VCE(sat) - Normalized 1.6 VCE - Volts = 200A C = 300A 200A 100A 2.0 1.6 0.9 1.2 0.8 I C = 100A 0.8 0.7 -50 -25 0 25 50 75 100 125 5 150 6 7 8 9 10 11 12 13 VGE - Volts TJ - Degrees Centigrade Fig. 5. Input Admittance Fig. 6. Transconductance 280 350 TJ = - 40ºC 240 300 250 TJ = 125ºC 25ºC - 40ºC 160 g f s - Siemens IC - Amperes 200 120 25ºC 200 125ºC 150 80 100 40 50 0 0 4.0 4.4 4.8 5.2 5.6 VGE - Volts © 2009 IXYS CORPORATION, All Rights Reserved 6.0 6.4 6.8 0 40 80 120 160 IC - Amperes 200 240 280 IXGN400N30A3 Fig. 8. Capacitance Fig. 7. Gate Charge 16 100,000 VCE = 150V 14 f = 1 MHz I C = 100A Capacitance - PicoFarads I G = 10 mA 12 VGE - Volts 10 8 6 4 Cies 10,000 Coes 1,000 Cres 2 100 0 0 100 200 300 400 500 0 600 5 10 15 20 25 30 35 40 VCE - Volts QG - NanoCoulombs Fig. 10. Maximum Transient Thermal Impedance Fig. 9. Reverse-Bias Safe Operating Area 1.000 450 400 300 Z(th)JC - ºC / W IC - Amperes 350 250 200 150 0.100 0.010 TJ = 125ºC 100 RG = 1Ω dv / dt < 10V / ns 50 0 25 75 125 175 225 275 325 VCE - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.001 0.00001 0.0001 0.001 0.01 0.1 Pulse Width - Seconds 1 10 IXGN400N30A3 Fig. 11. Resistive Turn-on Rise Time vs. Junction Temperature Fig. 12. Resistive Turn-on Rise Time vs. Collector Current 56 56 RG = 1Ω , VGE = 15V I VCE = 240V C 54 = 300A, 200A, 100A TJ = 125ºC t r - Nanoseconds t r - Nanoseconds 54 52 50 48 52 RG = 1Ω , VGE = 15V VCE = 240V 50 48 TJ = 25ºC 46 46 44 100 44 25 35 45 55 65 75 85 95 105 115 125 120 140 160 Fig. 13. Resistive Turn-on Switching Times vs. Gate Resistance 80 110 TJ = 125ºC, VGE = 15V 76 64 60 70 56 60 52 50 48 40 44 30 3 4 5 6 7 8 9 td(off) - - - - VCE = 240V 300 250 220 I C = 300A, 200A, 100A 200 200 100 190 25 10 35 45 340 TJ = 125ºC, VGE = 15V td(off) - - - - 700 = 100A 600 500 240 400 220 300 200 200 180 100 2 3 4 5 6 RG - Ohms 95 105 115 180 125 7 © 2009 IXYS CORPORATION, All Rights Reserved 8 9 10 td(off) - - - - 230 RG = 1Ω, VGE = 15V VCE = 240V 250 220 TJ = 125ºC 200 210 150 200 TJ = 25ºC 100 50 100 t d ( o f f ) - Nanoseconds 800 tf 300 900 I C = 200A, 300A 1 85 240 1000 VCE = 240V 260 75 350 t f - Nanoseconds tf t d ( o f f ) - Nanoseconds t f - Nanoseconds 360 C 65 Fig. 16. Resistive Turn-off Switching Times vs. Collector Current 1100 I 55 TJ - Degrees Centigrade 380 280 210 150 Fig. 15. Resistive Turn-off Switching Times vs. Gate Resistance 300 300 230 RG - Ohms 320 280 240 RG = 1Ω, VGE = 15V 50 40 2 260 t d ( o f f ) - Nanoseconds 68 80 1 tf 72 I C = 200A, 100A 90 240 250 350 t d ( o n ) - Nanoseconds t r - Nanoseconds td(on) - - - - VCE = 240V 100 220 400 t f - Nanoseconds tr 200 Fig. 14. Resistive Turn-off Switching Times vs. Junction Temperature 130 120 180 IC - Amperes TJ - Degrees Centigrade 190 120 140 160 180 200 220 240 260 280 180 300 IC - Amperes IXYS REF: G_400N30A3(96)11-18-08-A Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.