IXGN400N60B3

IXGN400N60B3 GenX3TM 600V IGBT VCES = 600V IC25 = 430A VCE(sat)  1.50V Medium-Speed Low-Vsat PT IGBT for 5-40 kHz Switching E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings VCES TJ = 25C to 150C 600 V VCGR TJ = 25C to 150C, RGE = 1M 600 V VGES Continuous ± 20 V VGEM Transient ± 30 V IC25 IC110 ILRMS ICM TC = 25C (Chip Capability) TC = 110C Terminal Current Limit TC = 25C, 1ms 430 200 200 1500 A A A A SSOA VGE = 15V, TVJ = 125C, RG = 1 (RBSOA) Clamped Inductive Load PC TC = 25C E G E C G = Gate, C = Collector, E = Emitter  either emitter terminal can be used as Main or Kelvin Emitter ICM = 400 A @ VCE < VCES V 1000 W TJ -55 ... +150 C  TJM Tstg 150 -55 ... +150 C C  2500 3000 V~ V~ 1.5/13 1.3/11.5 Nm/lb.in Nm/lb.in 30 g VISOL 50/60Hz IISOL 1mA Md Mounting Torque Terminal Connection Torque (M4) t = 1min t = 1s Weight Features    Advantages   Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVCES IC = 1mA, VGE = 0V 600 VGE(th) IC = 8mA, VCE = VGE 3.0 ICES VCE = VCES, VGE = 0V IGES VCE = 0V, VGE = ± 20V VCE(sat) IC IC V 100 μA TJ = 125C = 100A, VGE = 15V, Note 1 = 400A © 2015 IXYS CORPORATION, All Rights Reserved 4 mA ±400 nA 1.25 1.80 1.50 High Power Density Low Gate Drive Requirement Applications V 5.0 Optimized for Low Conduction and Switching Losses Square RBSOA High Current Capability Isolation Voltage 3000 V~ International Standard Package V V         Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts DS100156B(10/15) IXGN400N60B3 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. IC = 60A, VCE = 10V, Note 1 85 Cies Coes Cres VCE = 25V, VGE = 0V, f = 1MHz 140 S 31 1560 68 nF pF pF 900 140 300 nC nC nC 50 ns 50 2.95 ns mJ 220 ns Qg Qge Qgc IC = 100A, VGE = 15V, VCE = 0.5 • VCES td(on) tri Eon td(off) SOT-227B miniBLOC (IXGN) Inductive Load, TJ = 25C IC = 100A,VGE = 15V VCE = 480V, RG = 1 125 200 ns Eoff 2.30 4.40 mJ td(on) tri Eon td(off) tfi Eoff 50 50 4.40 295 225 4.25 tfi Inductive Load, TJ = 125C IC = 100A,VGE = 15V VCE = 480V, RG = 1 RthJC RthCS Note 0.05 ns ns mJ ns ns mJ 0.125 C/W C/W 1. Pulse test, t  300μs; duty cycle, d  2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXGN400N60B3 Fig. 1. Output Characteristics @ TJ = 25ºC Fig. 2. Output Characteristics @ TJ = 125ºC 350 350 VGE = 15V 10V 9V 8V 300 300 250 I C - Amperes 250 I C - Amperes VGE = 15V 10V 9V 8V 7V 200 150 6V 100 7V 200 150 6V 100 50 50 5V 5V 0 0 0 0.5 1.3 1 1.5 2 3 3.5 0 0.5 1 1.5 2.5 Fig. 3. Dependence of VCE(sat) on Junction Temperature Fig. 4. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage VGE = 15V 3.5 3 TJ = 25ºC I C = 300A 3.0 VCE - Volts 1.1 1.0 I C = 200A 2.5 I C = 300A 200A 100A 2.0 0.9 0.8 1.5 I C = 100A 0.7 1.0 -50 -25 0 25 50 75 100 125 150 5 6 7 8 9 TJ - Degrees Centigrade 10 11 12 13 14 15 200 220 VGE - Volts Fig. 6. Transconductance Fig. 5. Input Admittance 280 200 TJ = - 40ºC 180 240 TJ = 125ºC 25ºC - 40ºC 160 25ºC 200 g f s - Siemens 140 I C - Amperes 2 VCE - Volts 1.2 VCE(sat) - Normalized 2.5 VCE - Volts 120 100 80 60 125ºC 160 120 80 40 40 20 0 0 3.0 3.5 4.0 4.5 5.0 5.5 VGE - Volts © 2015 IXYS CORPORATION, All Rights Reserved 6.0 6.5 7.0 0 20 40 60 80 100 120 I C - Amperes 140 160 180 IXGN400N60B3 Fig. 7. Gate Charge Fig. 8. Capacitance 16 100,000 VCE = 300V 14 I C = 100A V GE - Volts Capacitance - PicoFarads I G = 10mA 12 10 8 6 4 Cies 10,000 1,000 Coes 100 2 Cres f = 1 MHz 0 10 0 100 200 300 400 500 600 700 800 900 1000 0 5 10 15 20 25 30 35 40 VCE - Volts QG - NanoCoulombs Fig. 11. Maximum Transient Thermal Impedance Fig. 10. Reverse-Bias Safe Operating Area 450 1 400 300 Z (th)JC - ºC / W I C - Amperes 350 250 200 150 0.1 0.01 100 TJ = 125ºC RG = 1Ω dv / dt < 10V / ns 50 0 100 150 200 250 300 350 400 450 500 550 600 650 VCE - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.001 0.0001 0.001 0.01 0.1 1 Pulse Width - Seconds 10 100 IXGN400N60B3 Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance 8 Eoff 7 Eon - 8 --- 5 Eoff 7 TJ = 125ºC , VGE = 15V ---- TJ = 125ºC 4 VCE = 480V 6 VCE = 480V Eon 3 3 3 2 2 TJ = 25ºC 2 1 I C = 50A 1 3 1 1 0 0 0 1 2 3 4 5 6 7 8 9 50 10 55 60 65 70 RG - Ohms Eon tfi ---- RG = 1ΩVGE = 15V 2 2 on 3 E 3 0 55 65 75 85 95 105 115 - MilliJoules I C = 50A 1 45 1200 250 1000 I C = 100A 200 800 150 1 100 0 125 50 tfi 400 200 1 2 3 4 5 td(off) - - - - 8 9 10 150 300 100 260 50 220 TJ = 25ºC t f i - Nanoseconds TJ = 125ºC td(off) - - - - 335 320 VCE = 480V 140 305 120 290 100 275 I C = 100A 80 260 60 245 I C = 50A 40 230 20 0 70 75 80 85 I C - Amperes © 2015 IXYS CORPORATION, All Rights Reserved 90 95 180 100 350 215 0 50 55 60 65 70 75 80 85 TJ - Degrees Centigrade 90 95 200 100 t d(off) - Nanoseconds 340 65 7 RG = 1Ω, VGE = 15V 160 t d(off) - Nanoseconds 200 60 tfi 180 380 VCE = 480V 55 6 Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature 200 420 RG = 1Ω, VGE = 15V 50 600 I C = 50A RG - Ohms Fig. 16. Inductive Turn-off Switching Times vs. Collector Current 250 1400 td(off) - - - - TJ - Degrees Centigrade 300 0 100 95 t d(off) - Nanoseconds I C = 100A 4 35 90 VCE = 480V 4 25 85 TJ = 125ºC, VGE = 15V 300 5 VCE = 480V 80 Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance 350 6 t f i - Nanoseconds Eoff 5 75 I C - Amperes Fig. 14. Inductive Switching Energy Loss vs. Junction Temperature 6 E off - MilliJoules E on - MilliJoules 4 - MilliJoules 4 on 5 E off - MilliJoules I C = 100A 5 2 t f i - Nanoseconds 5 RG = 1ΩVGE = 15V 4 E E off - MilliJoules 6 Fig. 13. Inductive Switching Energy Loss vs. Collector Current IXGN400N60B3 Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance tri 100 td(on) - - - - 60 80 I C = 50A 40 60 20 40 0 3 4 5 6 7 8 9 tri 60 45 55 40 50 TJ = 25ºC 35 45 TJ = 125ºC 30 40 25 35 55 60 65 70 75 80 85 90 95 30 100 I C - Amperes Fig. 20. Inductive Turn-on Switching Times vs. Junction Temperature 60 VCE = 480V 50 10 RG - Ohms 70 65 20 20 2 td(on) - - - - t d(on) - Nanoseconds I C = 100A t d(on) - Nanoseconds 100 70 RG = 1Ω, VGE = 15V 50 80 1 tri 55 120 TJ = 125ºC, VGE = 15V VCE = 480V t r i - Nanoseconds 60 140 t r i - Nanoseconds 120 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current 80 td(on) - - - 70 RG = 1Ω, VGE = 15V 50 60 I C = 100A 40 50 30 40 I C = 50A 20 30 10 25 35 45 55 65 75 85 95 105 t d(on) - Nanoseconds t r i - Nanoseconds VCE = 480V 115 20 125 TJ - Degrees Centigrade IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: G_400N60B3(99)7-31-09 Disclaimer Notice - Information furnished is believed to be accurate and reliable. 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