IXGN50N60BD3

HiPerFASTTM IGBT with HiPerFRED IXGN 50N60BD2 IXGN 50N60BD3 Buck & boost configurations IGBT ...BD2 Symbol Test Conditions VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 75 A Maximum Ratings IC90 TC = 90°C 50 A ICM TC = 25°C, 1 ms 200 A ICM = 100 @ 0.8 VCES A 250 W 600 V 60 A TC = 25°C VRRM Diode SOT-227B, miniBLOC E 153432 1 2 4 PC IFAVM TC = 70°C; rectangular, d = 50% IFRM tP z 0.8 • VCES, higher TJ or increased RG 110 250 ns 150 220 ns 3.0 4.0 mJ miniBLOC, SOT-227 B M4 screws (4x) supplied Dim. Millimeter Min. Max. Inches Min. Max. A B 31.50 7.80 31.88 8.20 1.240 0.307 1.255 0.323 C D 4.09 4.09 4.29 4.29 0.161 0.161 0.169 0.169 E F 4.09 14.91 4.29 15.11 0.161 0.587 0.169 0.595 G H 30.12 38.00 30.30 38.23 1.186 1.496 1.193 1.505 J K 11.68 8.92 12.22 9.60 0.460 0.351 0.481 0.378 L M 0.76 12.60 0.84 12.85 0.030 0.496 0.033 0.506 N O 25.15 1.98 25.42 2.13 0.990 0.078 1.001 0.084 td(on) Inductive load, TJ = 125°C 50 ns t ri IC = IC90, VGE = 15 V, L = 100 mH 60 ns Eon VCE = 0.8 VCES, RG = Roff = 2.7 W 3.0 mJ P Q 4.95 26.54 5.97 26.90 0.195 1.045 0.235 1.059 td(off) Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG 200 ns R S 3.94 4.72 4.42 4.85 0.155 0.186 0.174 0.191 250 ns T U 24.59 -0.05 25.07 0.1 0.968 -0.002 0.987 0.004 4.2 mJ tfi Eoff RthJC 0.50 K/W RthCK 0.05 Reverse Diode (FRED) Characteristic Values (TJ = 25°C, unless otherwise specified) Symbol Test Conditions IR TVJ = 25°C VR= VRRM TVJ = 150°C IF = 60 A, TVJ = 150°C Pulse test, t £ 300 ms, duty cycle d £ 2 % VF IRM t rr typ. IF = IC90, VGE = 0 V, -diF/dt = 100 A/ms VR = 540 V IF = 1 A, -di/dt = 50 A/ms, VR = 30 V RthJC © 2000 IXYS All rights reserved K/W TVJ = 25°C TJ = 25°C 35 max. 650 2.5 1.75 2.40 uA mA V V 8.0 A ns 0.85 K/W IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-5 IXGN 50N60BD2 IXGN 50N60BD3 100 TJ = 25°C 7V 60 40 20 11V VGE = 15V 13V 160 IC - Amperes 80 IC - Amperes 200 VGE = 15V 13V 11V 9V T J = 25°C 9V 120 7V 80 40 5V 5V 0 0 0 1 2 3 4 5 0 2 4 VCE - Volts 8 Fig. 2. Extended Output Characteristics 100 1.6 T J = 125°C V = 15V GE 13V 11V VGE = 15V 9V VCE (sat) - Normalized 80 7V 60 40 5V 20 0 0 1 2 3 4 1.2 IC = 50A 1.0 IC = 25A 0.8 0.6 0.4 25 5 IC = 100A 1.4 50 75 VCE - Volts 100 125 150 T J - Degrees C Fig. 3. Saturation Voltage Characteristics Fig. 4. Temperature Dependence of VCE(sat) 10000 100 f = 1Mhz VCE = 10V Ciss Capacitance - pF 80 IC - Amperes 10 VCE - Volts Fig. 1. Saturation Voltage Characteristics IC - Amperes 6 60 40 T J = 25°C TJ = 125°C 1000 Coss 100 Crss 20 10 0 0 2 4 6 8 10 VGE - Volts Fig. 5. Saturation Voltage Characteristics © 2000 IXYS All rights reserved 0 5 10 15 20 25 30 35 40 VCE-Volts Fig. 6. Junction Capacitance Curves 3-5 IXGN 50N60BD2 IXGN 50N60BD3 6 12 6 10 5 12 TJ = 125°C 4 8 E(OFF) 3 6 2 4 1 TJ = 125°C IC = 100A 4 E(OFF) 8 3 6 E(ON) IC = 50A E(OFF) IC =25A 2 4 1 2 10 E(ON) E(OFF) E(OFF) - millijoules E(ON) E(ON) - millijoules RG = 4.7
E(OFF) - milliJoules E(ON) - millijoules 5 2 E(ON) 0 0 20 40 60 80 0 0 100 0 10 20 30 40 50 0 60 RG - Ohms IC - Amperes Fig. 8. Dependence of tfi and EOFF on RG. Fig. 7. Dependence of EON and EOFF on IC. 600 20 IC =50A VCE = 250V 100 IC - Amperes VGE - Volts 15 10 TJ = 125°C 10 RG = 5.2
dV/dt < 5V/ns 1 5 0.1 0 0 50 100 150 200 250 300 0 100 200 300 400 500 VCE - Volts Qg - nanocoulombs Fig. 10. Turn-off Safe Operating Area Fig. 9. Gate Charge ZthJC (K/W) 1 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 Pulse Width - Seconds Fig. 11. Transient Thermal Resistance © 2000 IXYS All rights reserved 4-5 IXGN 50N60BD2 IXGN 50N60BD3 4000 160 A 140 IF 80 TVJ= 100°C VR = 300V nC 3000 120 TVJ= 25°C 60 IF=120A IF= 60A IF= 30A Qr 100 TVJ=100°C 80 TVJ= 100°C VR = 300V A IRM 2000 40 1000 20 IF=120A IF= 60A IF= 30A TVJ=150°C 60 40 20 0 0 1 2 0 100 V A/ms 1000 -diF/dt VF Fig. 12 Forward current IF versus VF Fig. 13 Reverse recovery charge Qr versus -diF/dt 2.0 140 Kf 400 ms 1000 600 A/ 800 -diF/dt Fig. 14 Peak reverse current IRM versus -diF/dt 4 µs VFR tfr 3 tfr 120 1.0 200 V VFR 15 trr 1.5 0 20 TVJ= 100°C VR = 300V ns 130 0 IF=120A IF= 60A IF= 30A 110 10 2 5 1 I RM 100 0.5 Qr 90 0.0 80 0 40 80 120 °C 160 0 TVJ 200 400 800 A/ ms 1000 600 TVJ= 100°C IF = 60A 0 0 200 400 -diF/dt Fig. 15 Dynamic parameters Qr, IRM versus TVJ Fig. 16 Recovery time trr versus -diF/dt 1 0 ms 1000 600 A/ 800 diF/dt Fig. 17 Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJC calculation: K/W i 0.1 1 2 3 ZthJC Rthi (K/W) ti (s) 0.324 0.125 0.201 0.0052 0.0003 0.0385 0.01 0.001 0.0001 0.00001 DSEP 60-06A 0.0001 0.001 0.01 s 0.1 1 t Fig. 18 Transient thermal resistance junction to case © 2000 IXYS All rights reserved 5-5