IXGN72N60C3H1

IXGN72N60C3H1 GenX3TM 600V IGBT with Diode VCES IC110 VCE(sat) tfi(typ) High-Speed Low-Vsat PT IGBTs 40-100 kHz Switching = = ≤£ = 600V 52A 2.50V 55ns SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 IC110 ICM TC = 25°C TC = 110°C TC = 25°C, 1ms 78 52 360 A A A IA EAS TC = 25°C TC = 25°C 50 500 A mJ SSOA VGE = 15V, TVJ = 125°C, RG = 2Ω ICM = 150 A (RBSOA) Clamped Inductive Load PC TC = 25°C @ VCE ≤ VCES 360 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C 2500 3000 V~ V~ 1.5/13 1.3/11.5 Nm/lb.in. Nm/lb.in. 30 g TJ VISOL 50/60Hz IISOL ≤ 1mA Md Mounting Torque Terminal Connection Torque t = 1min t = 1s Weight Ec G Ec C G = Gate, C = Collector, E = Emitter c either emitter terminal can be used as Main or Kelvin Emitter Features z z z z z z z Optimized for Low Switching Losses Square RBSOA Aluminium Nitride Isolation - High Power Dissipation Isolation Voltage 3000V~ Avalanche Rated Anti-Parallel Ultra Fast Diode International Standard Package Advantages z z High Power Density Low Gate Drive Requirement Applications Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. VGE(th) IC = 250μA, VCE = VGE 3.0 ICES VCE = VCES, VGE = 0V IGES VCE = 0V, VGE = ±20V VCE(sat) IC = 50A, VGE = 15V, Note 1 TJ = 125°C TJ = 125°C © 2009 IXYS CORPORATION, All Rights Reserved 2.10 1.65 z z 5.5 V z 250 3 μA mA z ±100 nA 2.50 V z z z z Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts DS100053A(11/09) IXGN72N60C3H1 Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. IC = 50A, VCE = 10V, Note 1 33 Cies Coes Cres VCE = 25V, VGE = 0V, f = 1MHz 55 S 4780 330 117 pF pF pF 174 33 72 nC nC nC 27 ns 37 1.03 ns mJ Qg Qge Qgc td(on) tri Eon td(off) tfi IC = 50A, VGE = 15V, VCE = 0.5 • VCES Inductive load, TJ = 25°°C IC = 50A, VGE = 15V VCE = 480V, RG = 2Ω, Note 2 Eoff td(on) tri Eon td(off) tfi Eoff SOT-227B miniBLOC Inductive load, TJ = 125°°C IC = 50A, VGE = 15V VCE = 480V, RG = 2Ω, Note 2 RthJC RthCS 77 130 ns 55 110 ns 0.48 0.95 mJ 26 36 1.48 120 124 0.93 ns ns mJ ns ns mJ 0.05 0.35 °C/W °C/W M4 screws (4x) supplied Reverse Diode (FRED) Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) VF IF = 60A, VGE = 0V, Note 1 IRM IF = 60A, VGE = 0V, trr -diF/dt = 200A/μs, VR = 300V Characteristic Values Min. Typ. Max. TJ = 150°C 1.6 1.4 TJ = 100°C 8.3 A 140 ns RthJC Notes: 2.0 1.8 V V 0.42 °C/W 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. 2. Switching times & energy losses may increase for higher VCE(Clamp), TJ or RG. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXGN72N60C3H1 Fig. 1. Output Characteristics @ T J = 25ºC Fig. 2. Extended Output Characteristics @ T J = 25ºC 100 350 VGE = 15V 13V 11V 90 80 11V 9V 250 IC - Amperes 70 IC - Amperes VGE = 15V 13V 300 60 50 7V 40 30 200 9V 150 100 20 7V 50 10 5V 5V 0 0.0 0.4 0.8 1.2 1.6 2.0 2.4 0 2.8 0 2 4 6 VCE - Volts 12 14 1.3 100 VGE = 15V 13V 11V 90 80 VGE = 15V 1.2 VCE(sat) - Normalized 9V 70 IC - Amperes 10 Fig. 4. Dependence of VCE(sat) on JunctionTemperature Fig. 3. Output Characteristics @ T J = 125ºC 60 50 7V 40 30 1.1 I = 100A C 1.0 0.9 I C = 50A 0.8 0.7 20 I C = 25A 0.6 5V 10 0 0.5 0.0 0.4 0.8 1.2 1.6 2.0 2.4 0 25 50 VCE - Volts 75 100 125 150 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance 100 5.0 TJ = 25ºC 4.5 90 80 4.0 3.5 C TJ = 125ºC 25ºC - 40ºC 70 = 100A 50A 25A IC - Amperes I VCE - Volts 8 VCE - Volts 3.0 60 50 40 30 2.5 20 2.0 10 1.5 0 6 7 8 9 10 11 12 VGE - Volts © 2009 IXYS CORPORATION, All Rights Reserved 13 14 15 4.0 4.5 5.0 5.5 6.0 VGE - Volts 6.5 7.0 7.5 8.0 IXGN72N60C3H1 Fig. 8. Gate Charge Fig. 7. Transconductance 16 90 TJ = - 40ºC 80 70 60 VGE - Volts 125ºC 50 I C = 50A I G = 10mA 12 25ºC g f s - Siemens VCE = 300V 14 40 30 10 8 6 4 20 2 10 0 0 0 10 20 30 40 50 60 70 80 90 100 0 20 40 60 80 100 120 140 160 180 QG - NanoCoulombs IC - Amperes Fig. 9. Capacitance Fig. 10. Reverse-Bias Safe Operating Area 160 10,000 140 Capacitance - PicoFarads Cies 120 IC - Amperes 1,000 Coes 100 Cres 60 TJ = 125ºC , RG = 2Ω dv / dt < 10V / ns 20 10 5 80 40 f = 1 MHz 0 100 10 15 20 25 30 35 40 0 100 200 VCE - Volts 300 400 500 600 VCE - Volts Fig. 11. Maximum Transient Thermal Impedance Z(th)JC - ºC / W 1.00 0.10 0.01 0.0001 0.001 0.01 0.1 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 IXGN72N60C3H1 Fig. 13. Inductive Switching Energy Loss vs. Collector Current Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance 5.0 Eoff 4.5 Eon - --- 5.5 TJ = 125ºC , VGE = 15V 4.0 5.6 Eoff 2.4 VCE = 480V I C 4.0 = 100A 2.5 3.5 2.0 3.0 1.5 2.5 I C = 50A 1.0 Eoff - MilliJoules 3.0 4.0 1.6 3.2 1.2 2.4 TJ = 125ºC, 25ºC 0.8 1.6 0.4 0.8 2.0 0.5 1.5 0.0 0.0 1.0 2 3 4 5 6 7 8 9 10 11 12 13 14 20 15 30 40 50 RG - Ohms Eon ---- 4.8 4.0 3.2 I C = 100A 1.5 2.4 1.0 1.6 I C = 50A 0.5 0.0 35 45 55 65 75 85 95 105 115 Eon - MilliJoules 2.0 25 0.8 0.0 125 tf 170 TJ = 125ºC, VGE = 15V td(off) - - - - 160 350 150 300 I 140 C 200 I 120 100 100 50 0 3 4 5 6 80 100 60 90 TJ = 25ºC 40 80 20 70 7 8 9 10 11 12 13 14 160 15 125 tf 140 80 IC - Amperes © 2009 IXYS CORPORATION, All Rights Reserved 90 70 100 td(off) - - - - 115 RG = 2Ω , VGE = 15V VCE = 480V t f - Nanoseconds 110 60 150 120 105 100 95 I C = 100A I C = 50A 80 60 85 75 40 25 35 45 55 65 75 85 TJ - Degrees Centigrade 95 105 115 65 125 t d(off) - Nanoseconds 120 100 50 = 50A 110 130 TJ = 125ºC 40 C Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature 140 VCE = 480V 30 250 130 2 t d(off) - Nanoseconds t f - Nanoseconds td(off) - - - - RG = 2Ω , VGE = 15V 20 = 100A 90 150 120 400 RG - Ohms 180 140 450 VCE = 480V Fig. 16. Inductive Turn-off Switching Times vs. Collector Current tf 0.0 100 500 180 TJ - Degrees Centigrade 160 90 t d(off) - Nanoseconds VCE = 480V t f - Nanoseconds RG = 2Ω , VGE = 15V 2.5 80 190 5.6 Eoff 70 Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance 3.5 3.0 60 IC - Amperes Fig. 14. Inductive Switching Energy Loss vs. Junction Temperature E off - MilliJoules 4.8 VCE = 480V 2.0 4.5 ---- Eon - MilliJoules 3.5 Eon RG = 2Ω , VGE = 15V 5.0 E on - MilliJoules E off - MilliJoules 2.8 6.0 IXGN72N60C3H1 Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance Fig. 19. Inductive Turn-on Switching Times vs. Collector Current 160 60 C 50 = 100A 100 45 80 40 60 35 I 30 C = 50A 20 25 2 3 4 5 6 7 8 9 10 11 12 13 14 36 td(on) - - - - RG = 2Ω , VGE = 15V 34 VCE = 480V 80 32 70 30 TJ = 25ºC, 125ºC 60 28 50 26 40 24 30 22 20 20 10 15 20 30 40 50 60 70 80 90 t d(on) - Nanoseconds I 40 tr 90 VCE = 480V 120 38 100 55 t d(on) - Nanoseconds t r - Nanoseconds td(on) - - - - TJ = 125ºC, VGE = 15V t r - Nanoseconds tr 140 110 18 100 IC - Amperes RG - Ohms Fig. 20. Inductive Turn-on Switching Times vs. Junction Temperature 120 35 tr 100 RG = 2Ω , VGE = 15V td(on) - - - - 34 33 VCE = 480V 90 80 32 31 I C = 100A 70 30 60 29 50 28 40 27 30 I C 26 = 50A 20 25 35 45 55 65 t d(on) - Nanoseconds t r - Nanoseconds 110 75 85 95 105 115 25 125 TJ - Degrees Centigrade IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: G_72N60C3(8D)11-25-09-C IXGN72N60C3H1 Fig. 21 Fig. 22 Fig. 24 Fig. 25 Fig. 23 Z(th)JC Z (th)JC- [ºCºC / W/ W ] 1.00 1.00 0.10 0.10 0.01 0.01 0.0001 0.0001 0.001 0.001 0.01 0.01 [[ms] s] Pulse PulseWidth Width Seconds 0.1 0.1 1 1 10 10 Fig. 26. Maximum Transient Thermal Impedance junction to case (for diode) Fig. 26 Maximum transient thermal impedance © 2009 IXYS CORPORATION, All Rights Reserved IXYS REF: G_72N60C3(8D)11-25-09-C Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.