IXGP20N60B

HiPerFASTTM IGBT IXGA 20N60B IXGP 20N60B VCES IC25 VCE(sat)typ tfi = 600 V = 40 A = 1.7 V = 100 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 40 A IC90 TC = 90°C 20 A ICM TC = 25°C, 1 ms 80 A SSOA (RBSOA) VGE = 15 V, TVJ = 125°C, RG = 22 W Clamped inductive load, L = 100 mH ICM = 40 @ 0.8 VCES A PC TC = 25°C 150 W TJ -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C 300 °C Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md Mounting torque (TO-220) Weight TO-220 TO-263 Symbol Test Conditions BVCES IC = 250 mA, VGE = 0 V 600 VGE(th) IC = 250 mA, VCE = VGE 2.5 ICES VCE = 0.8 • VCES VGE = 0 V IGES VCE = 0 V, VGE = ±20 V VCE(sat) IC M3 M3.5 0.45/4 Nm/lb.in. 0.55/5 Nm/lb.in. 4 2 g g TO-220AB (IXGP) G CE TO-263 AA (IXGA) G E G = Gate, E = Emitter, C (TAB) C = Collector, TAB = Collector Features · International standard packages JEDEC TO-263 surface mountable and JEDEC TO-220 AB · High frequency IGBT · High current handling capability · HiPerFASTTM HDMOSTM process · MOS Gate turn-on - drive simplicity Applications Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 5 TJ = 25°C TJ = 125°C = IC90, VGE = 15 V IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved V 1.7 V 200 1 mA mA ±100 nA 2.0 V · Uninterruptible power supplies (UPS) · Switched-mode and resonant-mode power supplies · AC motor speed control · DC servo and robot drives · DC choppers Advantages · High power density · Suitable for surface mounting · Very low switching losses for high frequency applications 98506B (07/99) 1-4 IXGA 20N60B IXGP 20N60B Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs IC = IC90; VCE = 10 V, Pulse test, t £ 300 ms, duty cycle £ 2 % Cies 17 S 1500 pF 175 pF Cres 40 pF Qg 90 nC 11 nC 30 nC 15 ns Dim. 35 ns 0.15 mJ A B C D E F G H J K M N Q R Coes Qge VCE = 25 V, VGE = 0 V, f = 1 MHz 9 TO-220 AB (IXGP) Outline IC = IC90, VGE = 15 V, VCE = 0.5 VCES Qgc td(on) t ri Eon td(off) tfi Eoff Inductive load, TJ = 25°C IC = IC90, VGE = 15 V, L = 100 mH, VCE = 0.8 VCES, RG = Roff = 10 W Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG 150 200 ns 100 150 ns 0.7 1.0 mJ td(on) Inductive load, TJ = 125°C 15 ns t ri IC = IC90, VGE = 15 V, L = 100 mH 35 ns Eon VCE = 0.8 VCES, RG = Roff = 10 W 0.15 mJ Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG 220 ns 140 ns 1.2 mJ (TO-220) 0.25 td(off) tfi Eoff RthJC RthCK Millimeter Min. Max. 12.70 13.97 14.73 16.00 9.91 10.66 3.54 4.08 5.85 6.85 2.54 3.18 1.15 1.65 2.79 5.84 0.64 1.01 2.54 BSC 4.32 4.82 1.14 1.39 0.35 0.56 2.29 2.79 Inches Min. Max. 0.500 0.550 0.580 0.630 0.390 0.420 0.139 0.161 0.230 0.270 0.100 0.125 0.045 0.065 0.110 0.230 0.025 0.040 0.100 BSC 0.170 0.190 0.045 0.055 0.014 0.022 0.090 0.110 TO-263 AA (IXGA) Outline 0.83 K/W Min. Recommended Footprint © 2000 IXYS All rights reserved K/W Dim. Millimeter Min. Max. Inches Min. Max. A A1 4.06 2.03 4.83 2.79 .160 .080 .190 .110 b b2 0.51 1.14 0.99 1.40 .020 .045 .039 .055 c c2 0.46 1.14 0.74 1.40 .018 .045 .029 .055 D D1 8.64 7.11 9.65 8.13 .340 .280 .380 .320 E E1 e 9.65 6.86 2.54 10.29 8.13 BSC .380 .270 .100 .405 .320 BSC L L1 L2 L3 L4 14.61 2.29 1.02 1.27 0 15.88 2.79 1.40 1.78 0.38 .575 .090 .040 .050 0 .625 .110 .055 .070 .015 R 0.46 0.74 .018 .029 IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-4 IXGA 20N60B IXGP 20N60B 200 100 VGE = 15V 13V 11V TJ = 25°C 80 TJ = 25°C VGE = 15V 13V 160 IC - Amperes IC - Amperes 9V 60 7V 40 11V 120 9V 80 7V 40 20 5V 5V 0 0 0 1 2 3 4 0 5 2 4 8 10 VCE - Volts VCE - Volts Fig. 1. Output Characteristics Fig. 2. Extended Output Characteristics 1.75 100 VGE = 15V 13V 11V VGE = 15V VCE (sat) - Normalized TJ = 125°C 80 IC - Am eres 6 9V 60 40 7V 20 IC = 40A 1.50 1.25 IC = 20A 1.00 IC = 10A 0.75 5V 0.50 0 0 1 2 3 4 25 5 50 75 VCE - Volts 125 150 TJ - Degrees C Fig. 3. High Temperature Output Characteristics Fig. 4. Temperature Dependence of VCE(sat) 100 4000 VCE = 10V f = 1Mhz Capacitance - pF 80 IC - Amperes 100 60 40 TJ = 125°C Ciss 1000 Coss 100 Crss 20 TJ = 25°C 0 10 3 4 5 6 7 VGE - Volts Fig. 5. Admittance Curves © 2000 IXYS All rights reserved 8 9 10 0 5 10 15 20 25 30 35 40 VCE-Volts Fig. 6. Capacitance Curves 3-4 IXGA 20N60B IXGP 20N60B 3.0 4 6 8 TJ = 125°C TJ = 125°C RG = 10
4 1.5 3 E(ON) 1.0 2 E(OFF) 0.5 E(ON) - millijoules 2.0 IC =40A 3 6 E(OFF) E(ON) 2 4 IC = 20A E(ON) 1 E(OFF) 2 IC = 10A E(ON) 1 E(OFF) - millijoules E(ON) - millijoules 5 E(OFF) - milliJoules 2.5 E(OFF) 0.0 0 10 20 30 0 50 40 0 0 0 10 20 IC - Amperes 40 50 60 RG - Ohms Fig. 7. Dependence of EON and EOFF on IC. Fig. 8. Dependence of EON and EOFF on RG. 100 15 IC = 20A VCE = 300V 40 IC - Amperes 12 VGE - Volts 30 9 6 10 TJ = -55 to +125°C RG = 4.7
dV/dt < 5V/ns 1 3 0 0.1 0 20 40 60 80 100 0 Qg - nanocoulombs 100 200 300 400 500 600 VCE - Volts Fig. 9. Gate Charge Fig. 10. Turn-off Safe Operating Area 1 D=0.5 ZthJC (K/W) D=0.2 0.1 D=0.1 D=0.05 D=0.02 0.01 D=0.01 Single pulse D = Duty Cycle 0.001 0.00001 0.0001 0.001 0.01 0.1 1 Pulse Width - Seconds Fig. 11. IGBT Transient Thermal Resistance Junction-to-Case © 2000 IXYS All rights reserved 4-4