IXGP30N60B4D1

Preliminary Technical Information High-Gain IGBT w/ Diode IXGP30N60B4D1 VCES = IC110 = VCE(sat)  tfi(typ) = High-Speed PT Trench IGBT 600V 30A 1.7V 88ns TO-220 Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M 600 600 V V VGES VGEM Continuous Transient ±20 ±30 V V IC25 IC110 IF110 ICM TC TC TC TC 56 30 10 156 A A A A SSOA (RBSOA) VGE = 15V, TVJ = 125°C, RG = 10 Clamped Inductive Load ICM = 48 VCE  VCES A PC TC = 25°C 190 W -55 ... +150 150 -55 ... +150 °C °C °C 300 260 °C °C 1.13/10 Nm/lb.in.  3 g  = 25°C = 110°C = 110°C = 25°C, 1ms TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque Weight G CE G = Gate E = Emitter Tab C = Collector Tab = Collector Features     Optimized for Low Conduction and Switching Losses Square RBSOA Anti-Parallel Ultra Fast Diode International Standard Package Advantages High Power Density Low Gate Drive Requirement Applications • Switch-Mode and Resonant-Mode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. VGE(th) IC 3.0 ICES VCE = VCES, VGE= 0V = 250A, VCE = VGE 5.5 V 10 500 A A 100 nA TJ = 125C IGES VCE = 0V, VGE = 20V VCE(sat) IC = 24A, VGE = 15V, Note 1 TJ = 125C © 2013 IXYS CORPORATION, All Rights Reserved Power Supplies 1.5 1.5 1.7 • Uninterruptible Power Supplies (UPS) • DC Choppers • AC Motor Speed Drives • DC Servo and Robot Drives  PFC Circuits V V DS100275B(8/13) IXGP30N60B4D1 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs IC = 24A, VCE = 10V, Note 1 10 Cies Coes Cres VCE = 25V, VGE = 0V, f = 1MHz Qg Qge Qgc td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff IC = 24A, VGE = 15V, VCE = 0.5 • VCES Inductive Load, TJ = 25°C IC = 24A, VGE = 15V VCE = 400V, RG = 10 Note 2 Inductive Load, TJ = 125°C IC = 24A, VGE = 15V VCE = 400V, RG = 10 Note 2 RthJC RthCS TO-220 (IXGP) Outline 17 S 860 70 29 pF pF pF 77 9 33 nC nC nC 21 34 0.44 200 88 0.70 ns ns mJ ns ns mJ 1.30 20 33 0.75 288 223 1.50 ns ns mJ ns ns mJ 0.50 0.66 °C/W °C/W Pins: 1 - Gate 3 - Emitter 2 - Collector Reverse Diode (FRED) Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. VF IF = 10A, VGE = 0V, Note 1 IRM IF = 12A, VGE = 0V, -diF/dt = 100A/μs, VR = 100V, TJ = 125°C trr 2.66 1.66 TJ = 150°C IF = 1A, VGE = 0V, -diF/dt = 100A/μs, VR = 30V trr 2.5 A 110 ns 30 ns RthJC Notes: V V 2.5 °C/W 1. Pulse test, t  300μs, duty cycle, d  2%. 2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2