IXGP30N60C3

GenX3TM 600V IGBTs IXGA30N60C3 IXGP30N60C3* IXGH30N60C3 High-Speed PT IGBTs for 40-100kHz Switching *Obsolete Part Number VCES = IC110 = VCE(sat) ≤ tfi(typ) = 600V 30A 3.0V 47ns TO-263 AA (IXGA) G Symbol Test Conditions Maximum Ratings E VCES TC = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V VGES Continuous ± 20 V VGEM Transient ± 30 V IC25 TC = 25°C 60 A IC110 TC = 110°C 30 A ICM TC = 25°C, 1ms 150 A SSOA VGE = 15V, TVJ = 125°C, RG = 5Ω ICM = 60 A (RBSOA) Clamped Inductive Load @ ≤ VCES PC TC = 25°C 220 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C TJ TL 1.6mm (0.062 in.) from Case for 10s 300 °C TSOLD Plastic Body for 10 seconds 260 °C Md Mounting Torque (TO-220 & TO-247) Weight TO-220 TO-263 TO-263 1.13/10 Nm/lb.in. 2.5 3.0 3.0 g g g C (Tab) TO-220AB (IXGP) G CE C (Tab) TO-247 (IXGH) G C E G = Gate S = Emitter C (Tab) D = Collector Tab = Collector Features Optimized for Low Switching Losses Square RBSOA International Standard Packages Advantages Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVCES IC = 250μA, VGE = 0V 600 VGE(th) IC = 250μA, VCE = VGE 3.0 ICES VCE = VCES, VGE = 0V V 5.5 VCE = 0V, VGE = ± 20V VCE(sat) IC = 20A, VGE = 15V, Note 1 V 15 μA 300 μA TJ = 125°C IGES High Power Density Low Gate Drive Requirement ±100 nA TJ = 125°C © 2011 IXYS CORPORATION, All Rights Reserved 2.6 1.8 3.0 V V Applications High Frequency Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts DS100012B(05/11) IXGA30N60C3 IXGP30N60C3 IXGH30N60C3 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 9 IC = 20A, VCE = 10V, Note 1 Cies Coes VCE = 25V, VGE = 0V, f = 1MHz Cres Qg Qge IC = 20A, VGE = 15V, VCE = 0.5 • VCES Qgc td(on) tri Eon Inductive Load, TJ = 25°C IC = 20A, VGE = 15V 16 S 915 pF 78 pF 32 pF 38 nC 8 nC 17 nC 16 ns 26 ns 0.27 mJ td(off) VCE = 300V, RG = 5Ω 42 tfi Note 2 47 Eoff td(on) tri Eon td(off) tfi 0.09 75 IC = 20A, VGE = 15V VCE = 300V, RG = 5Ω Note 2 Eoff 0.18 Notes: ns mJ ns 28 ns 0.44 mJ 70 ns 90 ns 0.33 mJ RthJC RthCS 1 = Gate 2 = Collector 3 = Emitter 4 = Collector ns 17 Inductive Load, TJ = 125°C TO-263 Outline 0.56 °C/W TO-220 TO-247 0.50 0.21 °C/W °C/W TO-220 Outline 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. 2. Switching times & energy losses may increase for higher VCE(Clamp), TJ or RG. Dim. TO-247 Outline 1 2 ∅P 3 e Terminals: 1 - Gate 3 - Emitter 2 - Collector Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC 1 = Gate 2 = Collector Pins: 1 - Gate 3 = Emitter 2 - Drain IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405 B2 6,710,463 6,727,585 7,005,734 B2 6,759,692 7,063,975 B2 6,771,478 B2 7,071,537 7,157,338B2 IXGA30N60C3 IXGP30N60C3 IXGH30N60C3 Fig. 1. Output Characteristics @ T J = 25ºC Fig. 2. Extended Output Characteristics @ T J = 25ºC 40 180 VGE = 15V 13V 35 140 30 11V 13V 120 25 IC - Amperes IC - Amperes VGE = 15V 160 20 9V 15 10 100 11V 80 60 9V 40 7V 5 20 0 7V 0 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 0 2 4 6 8 12 14 16 18 20 Fig. 4. Dependence of VCE(sat) on Junction Temperature Fig. 3. Output Characteristics @ T J = 125ºC 1.1 40 VGE = 15V 13V 11V 35 VGE = 15V 1.0 I VCE(sat) - Normalized 30 IC - Amperes 10 VCE - Volts VCE - Volts 9V 25 20 15 C = 40A 0.9 0.8 I C = 20A 0.7 10 I 0.6 5 C = 10A 7V 0 0.5 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 25 50 75 VCE - Volts 100 125 150 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance 5.5 70 TJ = 25ºC 5.0 60 50 I C IC - Amperes VCE - Volts 4.5 = 40A 4.0 20A 40 TJ = 125ºC 25ºC - 40ºC 30 3.5 20 10A 3.0 10 0 2.5 7 8 9 10 11 12 13 VGE - Volts © 2011 IXYS CORPORATION, All Rights Reserved 14 15 5 5.5 6 6.5 7 7.5 8 8.5 VGE - Volts 9 9.5 10 10.5 11 IXGA30N60C3 IXGP30N60C3 IXGH30N60C3 Fig. 8. Gate Charge Fig. 7. Transconductance 24 16 TJ = - 40ºC 20 VCE = 300V 12 I G = 10mA I C = 20A 25ºC 16 125ºC VGE - Volts g f s - Siemens 14 12 8 10 8 6 4 4 2 0 0 0 10 20 30 40 50 60 70 80 0 5 10 Fig. 9. Capacitance 20 25 30 35 40 Fig. 10. Reverse-Bias Safe Operating Area 70 10,000 f = 1 MHz Capacitance - PicoFarads 15 QG - NanoCoulombs IC - Amperes 60 Cies 50 IC - Amperes 1,000 Coes 100 40 30 20 10 TJ = 125ºC RG = 5Ω dv / dt < 10V / ns Cres 0 100 10 0 5 10 15 20 25 30 35 40 150 200 250 300 350 400 450 500 550 600 650 VCE - Volts VCE - Volts Fig. 11. Maximum Transient Thermal Impedance for IGBT Z(th)JC - ºC / W 1 0.1 0.01 0.00001 0.0001 0.001 0.01 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. 0.1 1 10 IXGA30N60C3 IXGP30N60C3 IXGH30N60C3 Fig. 13. Inductive Switching Energy Loss vs. Collector Current Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance 0.8 Eon - Eoff 0.7 --- TJ = 125ºC , VGE = 15V 1.4 0.6 1.2 0.5 1.2 Eoff VCE = 300V = 40A 0.8 0.4 0.6 0.3 I C = 20A 0.2 6 8 10 12 14 16 18 0.4 E off - MilliJoules C 0.5 0.8 TJ = 125ºC 0.3 0.6 0.2 0.4 0.1 0.2 0 0.4 TJ = 25ºC 15 20 t fi 120 0.8 0.3 0.6 0.2 0.4 t f i - Nanoseconds 0.4 140 100 I C = 40A 120 80 I 100 I C = 20A 45 55 65 75 85 95 105 115 40 4 6 8 10 110 100 140 70 80 60 60 50 40 40 TJ = 25ºC 20 30 0 20 25 30 35 IC - Amperes © 2011 IXYS CORPORATION, All Rights Reserved 40 td(off) - - - - 80 RG = 5Ω , VGE = 15V VCE = 300V t f i - Nanoseconds 100 20 20 120 70 100 60 I C = 40A, 20A 80 50 60 40 40 30 20 25 35 45 55 65 75 85 TJ - Degrees Centigrade 95 105 115 20 125 t d(off) - Nanoseconds 80 TJ = 125ºC 15 18 90 t fi 90 VCE = 300V 10 16 160 t d(off) - Nanoseconds t f i - Nanoseconds td(off) - - - - RG = 5Ω , VGE = 15V 120 14 Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature 180 140 12 RG - Ohms Fig. 16. Inductive Turn-off Switching Times vs. Collector Current t fi 60 80 0 125 TJ - Degrees Centigrade 160 = 20A 0.2 0 35 C t d(off) - Nanoseconds VCE = 300V 1 I C = 40A td(off) - - - - TJ = 125ºC, VGE = 15V 160 VCE = 300V 25 40 140 1.2 E on - MilliJoules E off - MilliJoules ---- RG = 5Ω , VGE = 15V 0.1 35 180 1.4 0.5 30 Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance 0.7 Eon 25 IC - Amperes Fig. 14. Inductive Switching Energy Loss vs. Junction Temperature Eoff 0.2 0 10 20 RG - Ohms 0.6 1 E on - MilliJoules 1.0 I E on - MilliJoules E off - MilliJoules ---- VCE = 300V 0.6 4 Eon RG = 5Ω , VGE = 15V IXGA30N60C3 IXGP30N60C3 IXGH30N60C3 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance 90 t ri 80 td(on) - - - - 70 28 60 t ri 50 VCE = 300V t r i - Nanoseconds 26 VCE = 300V 60 I C 24 = 40A 50 22 40 20 30 I C 10 6 8 10 12 14 16 18 td(on) - - - - 22 RG = 5Ω , VGE = 15V 20 TJ = 125ºC 40 18 TJ = 25ºC 30 16 20 14 16 10 12 14 0 18 = 20A 20 4 t d(on) - Nanoseconds 70 t r i - Nanoseconds TJ = 125ºC, VGE = 15V 24 10 10 20 t d(on) - Nanoseconds 30 RG - Ohms 15 20 25 30 35 40 IC - Amperes Fig. 20. Inductive Turn-on Switching Times vs. Junction Temperature 75 21 20 I C = 40A 55 19 t ri td(on) - - - - RG = 5Ω , VGE = 15V 45 18 VCE = 300V 35 17 I C = 20A 25 t d(on) - Nanoseconds t r i - Nanoseconds 65 16 15 25 35 45 55 65 75 85 95 105 115 15 125 TJ - Degrees Centigrade IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. IXYS REF: G_30N60C3(4D)05-02-11-A Disclaimer Notice - Information furnished is believed to be accurate and reliable. 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