IXGQ20N120BD1

High Voltage IGBT with Diode VCES IC25 VCE(sat) IXGQ 20N120B IXGQ 20N120BD1 = 1200 = 40 = 3.4 = 160 tfi(typ) V A V ns BD1 Maximum Ratings TO-3P (IXGQ) Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 40 A IC110 TC = 110°C 20 A ICM TC = 25°C, 1 ms 100 A SSOA (RBSOA) VGE = 15 V, TJ = 125°C, RG = 10 Ω Clamped inductive load ICM = 40 @0.8 VCES A PC TC = 25°C 190 W -55 ... +150 °C z TJM 150 °C z Tstg -55 ... +150 °C TJ Md Mounting torque 300 °C 6 g Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. IC ICES VCE = VCES VGE = 0 V IGES VCE = 0 V, VGE = ±20 V VCE(sat) IC = 20A, VGE = 15 V Note 2 © 2003 IXYS All rights reserved 2.5 20N120B 20N120BD1 TJ=125°C 2.9 2.8 5.0 V 25 50 µA µA ±100 nA 3.4 V V (TAB) C = Collector TAB = Collector Features z International standard package IGBT and anti-parallel FRED for resonant power supplies - Induction heating - Rice cookers MOS Gate turn-on - drive simplicity Fast Recovery Expitaxial Diode (FRED) - soft recovery with low IRM Advantages z z = 250 µA, VCE = VGE VGE(th) E G = Gate E = Emitter z Weight Test Conditions C 1.13/10 Nm/lb.in. Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Symbol G z Saves space (two devices in one package) Easy to mount with 1 screw (isolated mounting screw hole) Reduces assembly time and cost DS99136(12/03) IXGQ 20N120B IXGQ 20N120BD1 Symbol Test Conditions gfs IC = 20A; VCE = 10 V, Note 2. Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 12 Cies 20N120B Coes VCE = 25 V, VGE = 0 V, f = 1 MHz 20N120BD1 Cres Qg IC = 20A, VGE = 15 V, VCE = 0.5 VCES Qge Qgc 16 S 1700 70 pF pF 80 pF 23 pF 62 nC 9 nC 24 nC td(on) Inductive load, TJ = 25°°C 20 ns tri IC = 20 A; VGE = 15 V VCE = 0.8 VCES; RG = Roff = 10 Ω Note 1. 14 ns td(off) tfi Eoff td(on) tri Eon td(off) Inductive load, TJ = 125°°C IC = 20A; VGE = 15 V VCE = 0.8 VCES; RG = Roff = 10 Ω Note 1 tfi Eoff RthJC RthCK (TO-247) Reverse Diode (FRED) 270 380 160 2.1 320 n s 3.5 mJ 25 ns 18 ns 1.4 mJ 270 ns 360 4.5 ns mJ 0.25 0.65 K/W K/W ns Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions IF TC = 90°C 10 A VF IF = 10 A, VGE = 0 V 3.3 V IRM t rr IF = 10 A; -diF/dt = 400 A/µs, VR = 600 V VGE = 0 V; TJ = 125°C t rr IF = 1 A; -diF/dt = 100 A/µs; VR = 30 V, VGE = 0 V 14 120 A ns 40 ns 2.5 K/W RthJC Notes: TO-3P (IXGQ) Outline 1. 2. Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 IXGQ 20N120B IXGQ 20N120BD1 Fig. 1. Output Characteristics @ 25 Deg. C Fig. 2. Extende d Output Characteris tics @ 25 deg. C 40 160 VGE = 15V 13V 11V 9V I C - Amperes 30 VGE = 15V 140 13V 120 I C - Amperes 35 25 20 7V 15 11V 100 80 9V 60 10 40 5 20 7V 5V 5V 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 0 2 4 6 8 Fig. 3. Output Characteristics @ 125 Deg. C 12 14 16 18 20 Fig. 4. Depende nce of V CE(sat) on Tem perature 40 1.5 VGE = 15V 13V 11V 9V 30 VGE = 15V 1.4 I C = 40A V C E (sat)- Normalized 35 I C - Amperes 10 V C E - Volts V C E - Volts 25 20 7V 15 10 1.3 1.2 1.1 I C = 20A 1.0 0.9 I C = 10A 5 0.8 5V 0 0.7 0.5 1 1.5 2 2.5 3 3.5 4 4.5 -50 -25 0 V CE - Volts Fig. 5. Colle ctor-to-Em itter Voltage vs . Gate-to-Em iite r voltage 50 75 100 125 Fig. 6. Input Adm ittance 60 6.5 TJ = 25ºC 6 50 5 I C - Amperes 5.5 VC E - Volts 25 TJ - Degrees Centigrade I C = 40A 20A 10A 4.5 4 3.5 40 30 20 3 2.5 TJ = 125ºC 25ºC -40ºC 10 2 0 1.5 6 7 8 9 10 11 12 13 V G E - Volts © 2003 IXYS All rights reserved 14 15 16 17 4 5 6 7 V G E - Volts 8 9 150 IXGQ 20N120B IXGQ 20N120BD1 Fig. 8. Dependence of Turn-off Ene rgy Loss on RG Fig. 7. Trans conductance 24 16 21 12 E off - milliJoules g f s - Siemens 18 15 12 9 8 I C = 20A 6 4 3 2 0 0 10 20 30 40 50 I C = 40A 10 6 0 TJ = 125ºC VGE = 15V VCE = 960V 14 TJ = -40ºC 25ºC 125ºC 60 I C = 10A 10 30 50 70 I C - Amperes Fig. 9. Dependence of Turn-Off Ene rgy Loss on Ic 110 130 150 Fig. 10. De pende nce of Turn-off Ene rgy Loss on Tem pe rature 14 14 R G = 10Ω R G = 100Ω - - VGE = 15V VCE = 960V TJ = 125ºC 10 8 TJ = 125ºC 6 R G = 10Ω R G = 100Ω - - VGE = 15V VCE = 960V 12 E off - milliJoules 12 E off - MilliJoules 90 R G - Ohms 10 I C = 40A 8 6 I C = 20A 4 4 TJ = 25ºC 2 2 0 0 I C = 10A 10 15 20 25 30 35 25 40 35 45 I C - Amperes Fig. 11. Dependence of Turn-off Sw itching Tim e on RG 65 75 85 95 105 115 125 Fig. 12. Depe ndence of Turn-off Sw itching Tim e on Ic 1400 550 td(off) tfi - - - - - - 1200 Switching Time - nanoseconds Switching Time - nanoseconds 55 TJ - Degrees Centigrade TJ = 125ºC VGE = 15V VCE = 960V 1000 800 I C = 10A I C = 40A 600 400 td(off) tfi - - - - - - 500 R G = 10Ω VGE = 15V VCE = 960V 450 400 TJ = 125ºC 350 300 TJ = 25ºC 250 I C = 20A 200 200 10 30 50 70 90 110 130 150 R G - Ohms 10 15 20 25 30 35 40 I C - Amperes IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 IXGQ 20N120B IXGQ 20N120BD1 Fig. 13. Dependence of Turn-off Sw itching Tim e on Tem perature Fig. 14. Gate Charge 15 td(off) tfi - - - - - - 450 R G = 10Ω VGE = 15V VCE = 960V 400 350 VCE = 600V IC = 20A IG = 10mA I C = 40A 12 VG E - Volts Switching Time - nanoseconds 500 I C = 10A I C = 20A 300 9 6 I C = 40A 3 250 200 0 25 35 45 55 65 75 85 95 105 115 125 0 10 20 TJ - Degrees Centigrade 30 40 50 60 70 Q G - nanoCoulombs Fig. 15. Capacitance 10000 Capacitance - p F f = 1 MHz C ies 1000 100 C oes C res 10 0 5 10 15 20 25 30 35 40 V C E - Volts Fig. 16. Maxim um Transient Therm al Resistance R (th) J C - (ºC/W) 1.0 0.5 0.1 1 10 100 Pulse Width - milliseconds © 2003 IXYS All rights reserved 1000 IXGQ 20N120B IXGQ 20N120BD1 30 2000 IF 25 nC 20 1500 Qr TVJ= 100°C A VR = 600V IRM IF= 20A IF= 10A IF= 5A TVJ=150°C 15 40 TVJ= 100°C VR = 600V A 30 1000 20 500 10 IF= 20A IF= 10A IF= 5A TVJ=100°C 10 TVJ= 25°C 5 0 0 1 2 3 VF 0 100 4V Fig. 17 Forward current IF versus VF 0 A/µs 1000 -diF/dt Fig. 18 Reverse recovery charge Qr versus -diF/dt 150 2.0 Kf Qr 90 40 µs tfr VFR 80 0.8 40 0.4 100 0.0 0 tfr IF= 20A IF= 10A IF= 5A 110 0.5 1.2 V 120 IRM 600 A/µs 800 1000 -diF/dt TVJ= 100°C IF = 10A VFR 130 1.0 400 Fig. 19 Peak reverse current IRM versus -diF/dt 140 trr 1.5 200 120 TVJ= 100°C VR = 600V ns 0 80 120 °C 160 0 0 200 400 600 TVJ 800 1000 A/µs 0 200 400 -diF/dt Fig. 20 Dynamic parameters Qr, IRM versus TVJ Fig. 21 Recovery time trr versus -diF/dt 10 K/W 0.0 600 A/µs 800 1000 diF/dt Fig. 22 Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJC calculation: i 1 1 2 3 ZthJC Rthi (K/W) ti (s) 1.449 0.558 0.493 0.0052 0.0003 0.017 0.1 0.01 0.001 0.00001 DSEP 8-12A 0.0001 0.001 0.01 s 0.1 1 t Fig. 23 Transient thermal resistance junction to case IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications.Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.