IXGQ28N120B

High Voltage IGBT with Diode VCES IC25 VCE(sat) IXGQ 28N120B IXGQ 28N120BD1 tfi(typ) = 1200 = 50 = 3.5 = 160 V A V ns D1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 50 A IC110 TC = 110°C 28 A ICM TC = 25°C, 1 ms 150 A SSOA (RBSOA) VGE = 15 V, TJ = 125°C, RG = 10 Ω Clamped inductive load ICM = 60 @0.8 VCES A PC TC = 25°C 250 W -55 ... +150 °C TJ TJM 150 °C Tstg -55 ... +150 °C Md Mounting torque 1.13/10 Nm/lb.in. Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s TO-3P (IXGQ) G C G = Gate E = Emitter z z z z Weight 6 (TAB) C = Collector TAB = Collector Features °C 300 E g International standard package IGBT and anti-parallel FRED for resonant power supplies - Induction heating - Rice cookers MOS Gate turn-on - drive simplicity Fast Recovery Expitaxial Diode (FRED) - soft recovery with low IRM Advantages Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. = 250 µA, VCE = VGE VGE(th) IC ICES VCE = VCES VGE = 0 V IGES VCE = 0 V, VGE = ±20 V VCE(sat) IC = 28A, VGE = 15 V Note 2 © 2003 IXYS All rights reserved TJ = 25°C 2.5 5.0 V 28N120B 28N120BD1 25 50 µA µA ±100 nA 3.5 V T=125°C 2.9 2.8 z z z Saves space (two devices in one package) Easy to mount with 1 screw (isolated mounting screw hole) Reduces assembly time and cost DS99135(12/03) IXGQ 28N120B IXGQ 28N120BD1 Symbol Test Conditions gfs IC Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. = 28A; VCE = 10 V, Note 2 20 30 S 2700 170 pF pF 28N120BD1 180 pF Cres 60 pF Qg 92 nC 17 nC 37 nC 30 ns 20 ns Cies 28N120B Coes VCE = 25 V, VGE = 0 V, f = 1 MHz Qge IC = 28A, VGE = 15 V, VCE = 0.5 VCES Qgc td(on) tri td(off) tf i Eoff td(on) tri Eon td(off) tf i Eoff Inductive load, TJ = 25°°C IC = 28 A; VGE = 15 V VCE = 0.8 VCES; RG = Roff = 5 Ω Note 1. Inductive load, TJ = 125°°C IC = 28A; VGE = 15 V VCE = 0.8 VCES; RG = Roff = 5 Ω Note 1 RthJC RthCK Reverse Diode (FRED) 180 280 160 2.0 320 n s 5.0 mJ 35 ns 28 ns 2.5 mJ 250 ns 300 8.0 ns mJ 0.25 0.5 K/W K/W ns Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions IF TC = 90°C VF IF = 10 A, VGE = 0 V IF = 10 A, VGE = 0 V, TJ = 125°C IRM t rr IF = 10 A; -diF/dt = 400 A/µs, VR = 600 V VGE = 0 V; TJ = 125°C t rr IF = 1 A; -diF/dt = 100 A/µs; VR = 30 V, VGE = 0 V 10 A 2.95 2.0 V V 14 120 A ns 40 ns 2.5 K/W RthJC Notes: TO-3P (IXTQ) Outline 1. 2. Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,850,072 4,835,592 4,931,844 4,881,106 5,034,796 5,017,508 5,063,307 5,049,961 5,237,481 5,187,117 5,381,025 5,486,715 6,404,065B1 6,306,728B1 6,162,665 6,534,343 6,583,505 6,259,123B1 6,306,728B1 6,683,344 IXGQ28N120B IXGQ 28N120BD1 Fig. 1. Output Characte ristics @ 25 Deg. C Fig. 2. Extended Output Characte ristics @ 25 de g. C 270 56 VGE = 15V 13V 11V 49 VGE = 17V 210 35 I C - Amperes 42 I C - Amperes 15V 240 9V 28 21 7V 14 13V 180 150 11V 120 90 9V 60 7 7V 30 5V 0 0 0.5 1 1.5 2 2.5 3 3.5 0 4 2 4 6 8 Fig. 3. Output Characteristics @ 125 Deg. C 14 16 18 20 1.3 VGE = 15V 13V 11V VGE = 15V I C = 56A 1.2 V C E (sat)- Normalized 42 I C - Amperes 12 Fig. 4. De pende nce of V CE(sat) on Tem perature 56 49 10 V C E - Volts V C E - Volts 9V 35 28 7V 21 14 1.1 1.0 I C = 28A 0.9 0.8 I C = 14A 0.7 7 5V 0 0.6 0.5 1 1.5 2 2.5 3 3.5 4 0 25 V CE - Volts Fig. 5. Collector-to-Em itter Voltage vs. Gate-to-Em itter voltage 75 100 125 150 9 10 Fig. 6. Input Adm ittance 7 100 TJ = 25ºC 90 6 80 5 I C - Amperes VC E - Volts 50 TJ - Degrees Centigrade I C = 56A 28A 14A 4 70 60 50 40 30 3 TJ = 125ºC 25ºC -40ºC 20 10 2 0 6 7 8 9 10 11 12 13 V G E - Volts © 2003 IXYS All rights reserved 14 15 16 17 4 5 6 7 V G E - Volts 8 IXGQ28N120B IXGQ 28N120BD1 Fig. 8. Dependence of Turn-off Ene rgy Loss on RG Fig. 7. Trans conductance 22 35 I C = 56A 18 20 15 TJ = 125ºC VGE = 15V VCE = 960V 16 E off - milliJoules 25 g f s - Siemens 20 TJ = -40ºC 25ºC 125ºC 30 14 12 I C = 28A 10 8 10 6 5 I C = 14A 4 0 2 0 10 20 30 40 50 60 70 80 90 100 0 10 20 30 I C - Amperes Fig. 9. Dependence of Turn-Off Ene rgy Loss on IC 16 12 10 TJ = 125ºC 8 14 90 100 I C = 56A 10 I C = 28A 8 6 4 4 2 TJ = 25ºC 0 I C = 14A 0 10 15 20 25 30 35 40 45 50 55 60 25 35 I C - Amperes 45 55 65 75 85 95 105 115 125 TJ - Degrees Centigrade Fig. 11. Dependence of Turn-off Sw itching Tim e on RG Fig. 12. Depe ndence of Turn-off Sw itching Tim e on IC 1400 700 td(off) tfi - - - - - - 1200 TJ = 125ºC VGE = 15V VCE = 960V 1000 800 600 I C = 56A I C = 28A I C = 14A 400 Switching Time - nanoseconds Switching Time - nanoseconds 80 12 6 2 70 R G = 5Ω R G = 47Ω - - - VGE = 15V VCE = 960V 18 E off - milliJoules E off - MilliJoules 14 60 20 R G = 5Ω R G = 47Ω - - - VGE = 15V VCE = 960V 16 50 Fig. 10. De pende nce of Turn-off Ene rgy Loss on Tem pe rature 20 18 40 R G - Ohms td(off) tfi - - - - - - 600 R G = 5Ω VGE = 15V VCE = 960V 500 TJ = 125ºC 400 300 200 TJ = 25ºC 100 200 0 0 10 20 30 40 50 60 70 80 90 100 10 15 20 R G - Ohms 25 30 35 40 45 50 55 60 I C - Amperes IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,850,072 4,835,592 4,931,844 4,881,106 5,034,796 5,017,508 5,063,307 5,049,961 5,237,481 5,187,117 5,381,025 5,486,715 6,404,065B1 6,306,728B1 6,162,665 6,534,343 6,583,505 6,259,123B1 6,306,728B1 6,683,344 IXGQ 28N120B IXGQ28N120BD1 Fig. 13. De pende nce of Turn-off Sw itching Tim e on Te m perature Fig. 14. Gate Charge 550 15 td(off) tfi - - - - - - Switching Time - nanoseconds 500 450 12 R G = 5Ω VGE = 15V VCE = 960V 400 VCE = 600V IC = 28A IG = 10mA I C = 14A 300 VG E - Volts 350 I C = 56A 250 9 6 I C = 28A 200 I C = 14A 150 3 100 50 0 25 35 45 55 65 75 85 95 105 115 125 0 10 20 TJ - Degrees Centigrade 30 40 50 60 70 80 90 100 Q G - nanoCoulombs Fig. 15. Capacitance 10000 f = 1 MHz Capacitance - p F C ies 1000 C oes 100 C res 10 0 5 10 15 20 25 30 35 40 V C E - Volts Fig. 16. Maxim um Trans ient Therm al Res istance R (th) J C - (ºC/W) 1.00 0.50 0.10 1 10 100 Pulse Width - milliseconds © 2003 IXYS All rights reserved 1000 IXGQ 28N120B IXGQ28N120BD1 30 2000 IF 25 nC 20 1500 Qr TVJ= 100°C A VR = 600V IRM IF= 20A IF= 10A IF= 5A TVJ=150°C 15 40 TVJ= 100°C VR = 600V A 30 1000 20 500 10 IF= 20A IF= 10A IF= 5A TVJ=100°C 10 TVJ= 25°C 5 0 0 1 2 3 VF 0 100 4V Fig. 17 Forward current IF versus VF 0 A/µs 1000 -diF/dt 0 Fig. 18 Reverse recovery charge Qr versus -diF/dt 150 2.0 VFR 130 1.0 110 Qr tfr VFR 80 0.8 40 0.4 90 40 µs 100 0.0 0 tfr IF= 20A IF= 10A IF= 5A 120 IRM 0.5 1.2 TVJ= 100°C IF = 10A V 140 Kf 600 A/µs 800 1000 -diF/dt 120 trr 1.5 400 Fig. 19 Peak reverse current IRM versus -diF/dt TVJ= 100°C VR = 600V ns 200 80 120 °C 160 0 0 200 400 600 TVJ 800 1000 A/µs 0 200 400 -diF/dt Fig. 20 Dynamic parameters Qr, IRM versus TVJ Fig. 21 Recovery time trr versus -diF/dt 10 K/W 0.0 600 A/µs 800 1000 diF/dt Fig. 22 Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJC calculation: i 1 1 2 3 ZthJC Rthi (K/W) ti (s) 1.449 0.558 0.493 0.0052 0.0003 0.017 0.1 0.01 0.001 0.00001 DSEP 8-12A 0.0001 0.001 0.01 s 0.1 1 t Fig. 23 Transient thermal resistance junction to case IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,850,072 4,835,592 4,931,844 4,881,106 5,034,796 5,017,508 5,063,307 5,049,961 5,237,481 5,187,117 5,381,025 5,486,715 6,404,065B1 6,306,728B1 6,162,665 6,534,343 6,583,505 6,259,123B1 6,306,728B1 6,683,344