IXGQ85N33PCD1

IXGQ85N33PCD1 PolarTM High Speed IGBT w/ Diode VCES = 330V = 340A ICP VCE(sat)  2.10V Anti-Parallel Diode for PDP Sustain Circuit TO-3P (IXGQ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 330 V VGES VGEM Continuous Transient ±20 ±30 V V IC25 IDP ICP TC = 25°C TJ < 150°C, tp < 10μs, TJ < 150°C, tp < 1μs, D < 1% 85 40 340 A A A SSOA (RBSOA) VGE = 15V, TVJ = 150°C, RG = 20 Clamped Inductive Load ICM = 96 @VCE  300 A V PC TC = 25°C 150 W -55 ... +150 150 -55 ... +150 °C °C °C 300 260 °C °C 1.13/10 Nm/lb.in 5.5 g TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque Weight G C E G = Gate E = Emitter    Characteristic Values Min. Typ. Max. VGE(th) IC 3.0 ICES VCE = VCES, VGE = 0V IGES VCE = 0V, VGE = ±20V VCE(sat) IC IC IC IC = 1mA, VCE = VGE TJ = 125°C = 50A, VGE = 15V, Note 1 TJ = 25°C = 100A = 50A, VGE = 15V, Note 1 TJ = 125°C = 100A © 2017 IXYS CORPORATION, All Rights Reserved International standard package Low VCE(sat) - for minimum on-state conduction losses Fast switching Anti-Parallel Diode Advantages  6.0 V 1 200 μA μA ±100 nA 2.10 3.00 V V V V  High Power Density Low Gate Drive Requirement Applications  1.43 1.85 1.47 2.00 C = Collector Tab = Collector Features  Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) C (Tab) PDP Screen Drivers DS99610E(8/17) IXGQ85N33PCD1 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs IC = 43A, VCE = 10V, Note 1 30 Cies Coes Cres VCE = 25V, VGE = 0V, f = 1MHz Qg Qge Qgc IC = 43A, VGE = 15V, VCE = 0.5 • VCES td(on) tr td(off) tf Resistive load, TJ = 25°C IC = 50A, VGE = 15V td(on) tr td(off) tf Resistive load, TJ = 125°C IC = 50A, VGE = 15V VCE = 240V, RG = 5 VCE = 240V, RG = 5 RthJC RthCS TO-3P Outline 49 S 2200 155 25 pF pF pF 80 15 23 nC nC nC 20 43 87 72 ns ns ns ns 350 20 95 88 130 ns ns ns ns 0.25 0.833 °C/W °C/W 1 = Gate 3 = Emitter 2,4 = Collector Reverse Diode (FRED) Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) VF IF = 30A, VGE = 0V, Note 1 IF = 60A IF = 30A, VGE = 0V, Note 1 IF = 60A IRM trr IF = 30A, -diF/dt = 200A/μs, VR = 270V Characteristic Values Min. Typ. Max. 1.40 1.69 1.13 1.46 TJ = 25°C TJ = 150°C TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C 4.0 8.5 45 85 RthJC Note: V V V V A A ns ns 0.95 °C/W 1. Pulse test, t  300μs, duty cycle, d  2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXGQ85N33PCD1 o o Fig. 2. Extended Output Characteristics @ TJ = 25 C Fig. 1. Output Characteristics @ TJ = 25 C 300 180 VGE = 15V 13V VGE = 15V 13V 11V 160 200 120 I C - Amperes I C - Amperes 11V 250 9V 140 100 80 7V 60 9V 150 100 7V 40 50 20 5V 5V 0 0 0 0.5 1 1.5 2 2.5 3 3.5 4 0 1 2 3 4 1.8 180 VGE = 15V 13V 11V 7 8 9 10 VGE = 15V 1.6 140 VCE(sat) - Normalized 9V 120 I C - Amperes 6 Fig. 4. Dependence of VCE(sat) on Junction Temperature o Fig. 3. Output Characteristics @ TJ = 125 C 160 5 VCE - Volts VCE - Volts 100 7V 80 60 I C = 170A 1.4 1.2 I C = 85A 1.0 40 0.8 5V 20 I C = 42.5A 0.6 0 0 1 2 3 4 -50 5 -25 0 VCE - Volts 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance 200 6.0 o TJ = 25 C o TJ = - 40 C 180 o 25 C o 125 C 160 5.0 I C - Amperes VCE - Volts 140 4.0 I C = 170A 3.0 120 100 80 60 85A 2.0 40 20 42.5A 1.0 0 5 6 7 8 9 10 11 12 VGE - Volts © 2017 IXYS CORPORATION, All Rights Reserved 13 14 15 3.5 4.5 5.5 6.5 VGE - Volts 7.5 8.5 9.5 IXGQ85N33PCD1 Fig. 8. Gate Charge Fig. 7. Transconductance 16 60 o TJ = - 40 C I C = 42.5A o 25 C I G = 10mA 12 o 40 125 C V GE - Volts g f s - Siemens VCE = 165V 14 50 30 20 10 8 6 4 10 2 0 0 0 20 40 60 80 100 120 140 160 180 200 0 10 20 30 40 50 60 I C - Amperes QG - NanoCoulombs Fig. 9. Capacitance Fig. 10. Reverse-Bias Safe Operating Area 70 80 10,000 100 80 Cies 1,000 I C - Amperes Capacitance - PicoFarads f = 1 MHz Coes 100 60 40 o Cres TJ = 150 C 20 RG = 20Ω dv / dt < 10V / ns 0 10 0 5 10 15 20 25 30 35 50 40 100 150 200 250 300 VCE - Volts VCE - Volts Fig. 11. MaximumTransisent Thermal Impedance (IGBT) Z (th)JC - K / W 1 0.1 0.01 0.00001 0.0001 0.001 0.01 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.1 1 10 IXGQ85N33PCD1 Fig. 12. Resistive Turn-off Switching Times vs. Gate Resistance 240 tf 220 220 td(off) 200 200 o Fig. 13. Resistive Turn-off Switching Times vs. Collector Current tf 180 TJ = 125 C, VGE = 15V 140 85A 140 120 42.5A 120 100 t f - Nanoseconds t f - Nanoseconds 160 140 140 120 120 o 100 100 80 80 60 4 6 8 10 12 14 16 18 60 40 20 o 25 C < TJ < 125 C 100 80 60 o TJ = 25 C I C = 21A, 42.5A, 85A 80 40 20 30 40 50 Fig. 14. Resistive Turn-off Switching Times vs. Junction Temperature 110 200 I C = 85A 120 td(on) o 90 I C = 42.5A 70 40 60 125 0 75 100 I C = 42.5A 120 80 60 22 I C = 85A 80 20 I C = 21A 19 18 4 6 8 10 180 16 18 20 RG = 5Ω, VGE = 15V o 120 100 o TJ = 25 C 80 VCE = 240V 160 t r - Nanoseconds t r - Nanoseconds 140 14 Fig. 17. Resistive Turn-on Rise Time vs. Junction Temperature 200 TJ = 125 C VCE = 240V 12 RG - Ohms Fig. 16. Resistive Turn-on Rise Time vs. Collector Current RG = 5Ω, VGE = 15V 21 80 TJ - Degrees Centigrade 160 23 160 100 180 24 t d(on) - Nanoseconds 100 50 90 VCE = 240V 140 25 80 TJ = 125 C, VGE = 15V I C = 21A t d(off) - Nanoseconds t f - Nanoseconds 240 tr VCE = 240V 70 Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance td(off) RG = 5Ω, VGE = 15V 160 120 t r - Nanoseconds tf 60 I C - Amperes RG - Ohms 180 160 t d(off) - Nanoseconds 160 I C = 21A VCE = 240V 160 t d(off) - Nanoseconds 180 180 180 RG = 5Ω, VGE = 15V o TJ = 125 C VCE = 240V 200 200 td(off) 60 40 I C = 85A 140 120 100 I C = 42.5A 80 60 I C = 21A 40 20 20 0 0 20 30 40 50 60 70 I C - Amperes © 2017 IXYS CORPORATION, All Rights Reserved 80 90 25 50 75 TJ - Degrees Centigrade 100 125 IXGQ85N33PCD1 Fig. 18. Forward characteristics Fig. 19. Reverse Recovery Charge Qrr vs. -diF/dt 80 1.0 70 0.9 60 0.8 50 0.7 IF = 60A o TVJ = 125 C QRM [μC] VR = 270V I F [A] o TVJ = 150 C 40 o TVJ = 25 C 30A 0.6 30 0.5 20 0.4 10 0.3 0 15A 0.2 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 0 100 200 VF - [V] Fig. 20. Peak Reverse Current IRM vs. -diF/dt 400 500 600 700 Fig. 21. Recovery Time trr vs. -diF/dt 140 24 TVJ = 125 C IF = 60A VR = 270V 30A o 20 o TVJ = 125 C IF = 15A 120 VR = 270V 30A 15A 16 60A trr [ns] 100 I RM [A] 300 -diF/ dt [A/μs] 12 80 8 60 4 0 40 0 100 200 300 400 500 600 700 0 100 diF/dt [A/μs] 300 400 500 600 700 -diF/dt [A/μs] Fig. 22. Typ. Recovery Energy Erec vs. -diF/dt Fig. 23. Maximum Transient Thermal Impedance ( Diode) 1 50 IF = 60A TVJ = 125oC VR = 270V 30A Z(th)JC - K / W 40 Erec [mJ] 200 30 15A 20 0.1 10 0 0 100 200 300 400 500 600 700 -diF/dt [A/μs] 0.01 0.0001 0.001 0.01 0.1 1 10 Pulse Width [s] IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: IXG_85N33PCD1 (55-233) 8-30-17-A