IXGR55N120A3H1

Advance Technical Information IXGR55N120A3H1 GenX3TM 1200V IGBT w/ Diode (Electrically Isolated Tab) Ultra-Low-Vsat PT IGBTs for up to 3kHz Switching VCES = 1200V IC110 = 30A VCE(sat) ≤ 2.35V ISOPLUS 247TM Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 IC110 IF110 ICM TC TC TC TC 70 30 44 330 A A A A SSOA (RBSOA) VGE = 15V, TVJ = 125°C, RG = 3Ω Clamped Inductive Load ICM = 110 @ 0.8 • VCES A PC TC = 25°C 200 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C 300 260 °C °C 2500 V~ 20..120/4.5..27 N/lb. = 25°C ( Chip Capability ) = 110°C = 110°C = 25°C, 1ms TJ TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062 in.) from Case for 10 VISOL 50/60 Hz, 1 minute FC Mounting Force Weight 5 g G C E G = Gate E = Emitter Isolated Tab C = Collector Features z z z z z Silicon Chip on Direct-Copper Bond (DCB) Substrate Isolated Mounting Surface 2500V~ Electrical Isolation Anti-Parallel Ultra Fast Diode Optimized for Low Conduction Losses Advantages z z High Power Density Low Gate Drive Requirement Applications Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) VGE(th) IC = 1mA, VCE = VGE ICES VCE = VCES, VGE = 0V Characteristic Values Min. Typ. Max. 3.0 5.0 z V 25 μA 1.5 mA Note 1, TJ = 125°C IGES VCE = 0V, VGE = ±20V ±100 nA VCE(sat) IC 2.35 = 55A, VGE = 15V, Note 2 TJ = 125°C © 2009 IXYS CORPORATION, All Rights Reserved 2.20 V z z z z z z z z Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts Inrush Current Protection Circuits DS100219(12/09) IXGR55N120A3H1 Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 30 IC = 55A, VCE = 10V, Note 2 Cies Coes ISOPLUS247 (IXGR) Outline 45 S 4340 pF 300 pF VCE = 25V, VGE = 0V, f = 1 MHz Cres 115 pF Qg(on) 185 nC Qge IC = 55A, VGE = 15V, VCE = 0.5 • VCES Qgc td(on) tri Inductive load, TJ = 25°C 25 nC 75 nC 23 ns 42 ns Eon IC = 55A, VGE = 15V 5.1 mJ td(off) VCE = 0.8 • VCES, RG = 3Ω 365 ns Note 3 282 ns Eoff 13.3 mJ td(on) 24 ns tfi tri Inductive load, TJ = 125°C 46 ns Eon IC = 55A, VGE = 15V 9.5 mJ td(off) VCE = 0.8 • VCES, RG = 3Ω tfi Eoff Note 3 618 ns 635 ns 29.0 mJ 0.62 °C/W RthJC RthCK 0.15 °C/W Reverse Diode (FRED) Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. VF IF = 60A, VGE = 0V, Note 2 1.85 1.90 trr IF = 60A, VGE = 0V, 200 ns IRM -diF/dt = 350A/μs, VR = 600V, TJ = 100°C 24.6 A TJ = 150°C RthJC 2.5 V V 0.42 °C/W Notes: 1. Part must be heatsunk for high-temp Ices measurement. 2. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. 3. Switching times & energy losses may increase for higher VCE(Clamp), TJ or RG. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.