IXGT10N170

High Voltage IGBT IXGH10N170 IXGT10N170 VCES = 1700V IC90 = 10A VCE(sat) ≤ 4.0V TO-247 (IXGH) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 1700 V VGES Continuous ± 20 V VGEM Transient ± 30 V IC25 TC = 25°C 20 A IC90 TC = 90°C 10 A ICM TC = 25°C, 1ms 70 A SSOA VGE = 15V, TVJ = 125°C, RG = 16Ω ICM = 20 A (RBSOA) Clamped inductive load PC TC = 25°C @ 0.8 • VCES 110 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C 300 260 °C °C 1.13/10 Nm/lb.in. 6 4 g g TJ TL TSOLD 1.6mm (0.062 in.) from case for 10s Plastic body for 10 seconds Md Mounting torque (TO-247) Weight TO-247 TO-268 G C C (TAB) E TO-268 (IXGT) G G = Gate E = Emitter E C (TAB) C = Collector TAB = Collector Features z z z z z International standard packages JEDEC TO-268 and JEDEC TO-247 AD High current handling capability MOS Gate turn-on - drive simplicity Rugged NPT structure Molding epoxies meet UL 94 V-0 flammability classification Applications z Symbol Test Conditions (TJ = 25°C unless otherwise specified) Characteristic Values Min. Typ. Max. BVCES IC = 250μA, VGE = 0V 1700 VGE(th) IC = 250μA, VCE = VGE 3.0 ICES VCE = 0.8 • VCES VGE = 0V IGES VCE = 0V, VGE = ± 20V VCE(sat) IC = IC90, VGE = 15V, Note 1 V TJ = 125°C TJ = 125°C © 2008 IXYS CORPORATION, All rights reserved 2.7 3.4 5.0 V 50 500 μA μA ±100 nA 4.0 V z z z z z Capacitor discharge & pulser circuits AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power supplies Advantages z z z High power density Suitable for surface mounting Easy to mount with 1 screw, (isolated mounting screw hole) DS98992A(10/08) IXGH10N170 IXGT10N170 Symbol Test Conditions (TJ = 25°C unless otherwise specified) gfs IC = 10A, VCE = 10V, Note 1 IC(ON) VCE = 10V, VGE = 10V Characteristic Values Min. Typ. Max. 3.8 TO-247 AD Outline 6.3 S 33 A 700 pF 40 pF Cres 14 pF Qg 32 nC 4 nC 16 nC Cies Coes Qge VCE = 25V, VGE = 0V, f = 1MHz IC = 10A, VGE = 15V, VCE = 0.5 • VCES Qgc td(on) tr td(off) tf td(on) tri td(off) tfi Resistive load, TJ = 25°C IC = 10A, VGE = 15V VCE = 850V, RG = 16Ω Resistive load, TJ = 125°C IC = 10A, VGE = 15V VCE = 850V, RG = 16Ω 30 ns 69 ns 132 ns 600 ns 30 ns 270 ns 135 ns 495 ns 1.1 RthJC RthCS (TO-247) 0.25 °C/W °C/W 1 2 3 Terminals: 1 - Gate Dim. Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 2 - Drain Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 TO-268 Outline Note 1: Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. Min Recommended Footprint Terminals: 1 - Gate 2 - Drain IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXGH10N170 IXGT10N170 Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 20 80 VGE = 15V 13V 11V 18 16 VGE = 15V 70 13V 60 9V 12 IC - Amperes IC - Amperes 14 10 8 7V 50 11V 40 30 6 9V 20 4 2 10 5V 7V 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 2 4 6 8 VCE - Volts 12 14 16 18 20 Fig. 4. Dependence of VCE(sat) on Junction Temperature Fig. 3. Output Characteristics @ 125ºC 20 2.0 VGE = 15V 13V 11V 18 16 VGE = 15V 1.8 VCE(sat) - Normalized I 14 IC - Amperes 10 VCE - Volts 12 9V 10 8 7V 6 C = 20A 1.6 1.4 I C =10A 1.2 1.0 4 0.8 5V 2 0 I = 5A 0.6 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 -50 -25 0 VCE - Volts 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance 35 7.0 6.5 TJ = 25ºC TJ = - 40ºC 25ºC 125ºC 30 6.0 5.5 25 I 5.0 C = 20A IC - Amperes VCE - Volts C 4.5 4.0 3.5 10A 20 15 10 3.0 2.5 5 2.0 5A 1.5 0 6 7 8 9 10 11 12 VGE - Volts © 2008 IXYS CORPORATION, All rights reserved 13 14 15 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0 VGE - Volts IXYS REF: G_10N170(3N)10-13-08-A IXGH10N170 IXGT10N170 Fig. 7. Transconductance Fig. 8. Gate Charge 10 16 TJ = - 40ºC 9 VCE = 850V 14 I C = 10A 8 6 125ºC VGE - Volts g f s - Siemens 12 25ºC 7 I G = 10mA 5 4 10 8 6 3 4 2 2 1 0 0 0 5 10 15 20 25 30 35 0 4 8 IC - Amperes 12 16 Capacitance - PicoFarads IC - Amperes 16 14 12 10 8 0 200 32 30 35 40 Cies 18 2 28 1,000 20 4 10.0 24 Fig. 10. Capacitance Fig. 9. Reverse-Bias Safe Operating Area 22 6 20 QG - NanoCoulombs TJ = 150ºC 100 Coes RG = 16Ω dV / dt < 10V / ns Cres f = 1 MHz 10 400 600 800 1000 1200 1400 1600 1800 0 5 10 15 VCE - Volts 20 25 VCE - Volts Fig. 11. Maximum Transient Thermal Impedance 2.0 Z(th)JC - ºC / W 1.0 0.1 0.0001 0.001 0.01 Pulse Width - Second IXYS reserves the right to change limits, test conditions, and dimensions. 0.1 1 IXGH10N170 IXGT10N170 Fig. 12. Resistive Turn-on Rise Time vs. Junction Temperature Fig. 13. Resistive Turn-on Rise Time vs. Collector Current 350 350 RG = 16Ω RG = 16Ω 300 VGE = 15V VGE = 15V VCE = 850V 250 I C 200 = 20A 150 I C = 10A 100 VCE = 850V 250 t r - Nanoseconds t r - Nanoseconds 300 TJ = 125ºC 200 150 100 TJ = 25ºC 50 50 0 0 25 35 45 55 65 75 85 95 105 115 4 125 6 8 10 Fig. 14. Resistive Turn-on Switching Times vs. Gate Resistance 65 td(on) - - - - VCE = 850V 60 TJ = 125ºC, VGE = 15V 55 I C = 20A 340 50 320 I C = 10A 45 130 400 120 300 110 260 30 200 25 100 100 40 50 60 70 80 90 I C = 20A 25 35 45 55 RG - Ohms 1400 170 800 150 600 130 400 110 90 0 70 10 12 105 115 90 125 tf 14 16 IC - Amperes © 2008 IXYS CORPORATION, All rights reserved 18 20 450 td(off) - - - - 600 TJ = 125ºC, VGE = 15V 400 550 VCE = 850V 350 500 300 I 450 C = 10A 250 400 200 350 150 I C = 20A 300 TJ = 125ºC, 25ºC 8 95 t d(off) - Nanoseconds VCE = 850V 6 85 500 650 190 t d(off) - Nanoseconds t f - Nanoseconds td(off) - - - - RG = 16Ω, VGE = 15V 4 75 700 t f - Nanoseconds tf 200 65 Fig. 17. Resistive Turn-off Switching Times vs. Gate Resistance 210 1000 100 TJ - Degrees Centigrade Fig. 16. Resistive Turn-off Switching Times vs. Collector Current 1200 140 500 35 30 150 VCE = 850V 600 280 240 td(off) - - - - RG = 16Ω, VGE = 15V I C = 10A 40 20 20 160 tf 700 300 10 18 800 t f - Nanoseconds 360 16 t d(off) - Nanoseconds 380 14 Fig. 15. Resistive Turn-off Switching Times vs. Junction Temperature t d(on) - Nanoseconds t r - Nanoseconds 400 tr 12 IC - Amperes TJ - Degrees Centigrade 100 250 50 200 10 20 30 40 50 60 70 80 90 0 100 RG - Ohms IXYS REF: G_10N170(3N)10-13-08-A Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.