IXGT15N120BD1

Low VCE(sat) IGBT with Diode High Speed IGBT with Diode VDSS IXGH/IXGT 15N120BD1 IXGH/IXGT 15N120CD1 IC25 1200 V 30 A 1200 V 30 A VCE(sat) 3.2 V 3.8 V Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 30 A IC90 TC = 90°C 15 A ICM TC = 25°C, 1 ms 60 A SSOA (RBSOA) VGE = 15 V, TJ = 125°C, RG = 10 W Clamped inductive load ICM = 40 @0.8 VCES A PC TC = 25°C 150 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C TJ Md Mounting torque 1.13/10 Nm/lb.in. 300 °C Maximum tab temperature soldering SMD devices for 10s 260 °C 6/4 g TO-247AD/TO-268 G C E TAB TO-268 (IXGT) G E C (TAB) Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Weight TO-247AD (IXGH) G = Gate E = Emitter C = Collector TAB = Collector Features • International standard packages: JEDEC TO-247AD & TO-268 • IGBT and anti-parallel FRED in one package • MOS Gate turn-on - drive simplicity • Fast Recovery Expitaxial Diode (FRED) - soft recovery with low IRM Applications Symbol Test Conditions BVCES IC = 1 A, VGE = 0 V VGE(th) IC = 250 mA, VCE = VGE ICES VCE = VCES VGE = 0 V IGES VCE = 0 V, VGE = ±20 V VCE(sat) IC = IC90, VGE = 15 V Note 2 Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1200 2.5 TJ = 25°C TJ = 125°C 15N120BD1 15N120CD1 IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved V 5.0 V 500 mA mA ±100 nA 3.2 3.8 V V 2 • • • • • AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switch-mode and resonant-mode power supplies Advantages • Saves space (two devices in one package) • Easy to mount with 1 screw (isolated mounting screw hole) • Reduces assembly time and cost 98658A (7/00) 1-2 IXGH 15N120BD1 IXGH 15N120CD1 Symbol Test Conditions gfs IC = IC90; VCE = 10 V, Note 2. Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 12 15 S 1700 pF 155 pF C res 38 pF Qg 69 nC 13 nC Qgc 26 nC td(on) 25 ns 15 C ies VCE = 25 V, VGE = 0 V, f = 1 MHz Coes Qge IC = IC90, VGE = 15 V, VCE = 0.5 VCES t ri Inductive load, TJ = 25°C td(off) IC = IC90; VGE = 15 V VCE = 0.8 VCES; RG = Roff = 10 W Note 1. tfi 15N120BD1 15N120CD1 15N120BD1 15N120CD1 Eoff td(on) t ri Inductive load, TJ = 125°C Eon IC = IC90; VGE = 15 V VCE = 0.8 VCES; RG = Roff = 10 W td(off) tfi 15N120BD1 15N120CD1 15N120BD1 15N120CD1 Note 1 Eoff RthJC RthCK TO-247 IXGT 15N120BD1 IXGT 15N120CD1 TO-247 AD (IXGH) Outline Dim. Millimeter Min. Max. A B 19.81 20.32 20.80 21.46 0.780 0.800 0.819 0.845 ns C D 15.75 16.26 3.55 3.65 0.610 0.640 0.140 0.144 E F 4.32 5.49 5.4 6.2 0.170 0.216 0.212 0.244 G H 1.65 2.13 4.5 0.065 0.084 0.177 J K 1.0 1.4 10.8 11.0 0.040 0.055 0.426 0.433 150 280 ns 160 115 1.75 1.05 320 190 3.0 1.6 ns ns mJ mJ 25 ns L M 4.7 0.4 5.3 0.8 0.185 0.209 0.016 0.031 18 ns N 1.5 2.49 0.087 0.102 1.5 mJ 270 ns 360 250 3.5 2.1 ns mJ mJ mJ 0.25 0.83 K/W K/W TO-268AA (D3 PAK) Dim. Reverse Diode (FRED) Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions VF IF = 20 A, VGE = 0 V IF = 20 A, VGE = 0 V, TJ = 125°C IF TC = 25°C TC = 90°C IRM t rr IF = 20 A; -diF/dt = 400 A/ms, VR = 600 V VGE = 0 V; TJ = 125°C t rr IF = 1 A; -diF/dt = 100 A/ms; VR = 30 V,VGE = 0 V 2.6 2.1 2.8 V V 33 20 V V 15 200 A ns 40 ns 1.6 K/W RthJC Notes: 1. 2. Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG. Pulse test, t £ 300 ms, duty cycle d £ 2 % © 2000 IXYS All rights reserved Inches Min. Max. A A1 A2 b b2 C D E E1 e H L L1 L2 L3 L4 Millimeter Min. Max. 4.9 5.1 2.7 2.9 .02 .25 1.15 1.45 1.9 2.1 .4 .65 13.80 14.00 15.85 16.05 13.3 13.6 5.45 BSC 18.70 19.10 2.40 2.70 1.20 1.40 1.00 1.15 0.25 BSC 3.80 4.10 Inches Min. Max. .193 .201 .106 .114 .001 .010 .045 .057 .75 .83 .016 .026 .543 .551 .624 .632 .524 .535 .215 BSC .736 .752 .094 .106 .047 .055 .039 .045 .010 BSC .150 .161 Min. Recommended Footprint IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-2