IXGT16N170

IXGH 16N170 IXGT 16N170 High Voltage IGBT VCES IC25 VCE(sat) = 1700 = 32 = 3.5 V A V TO-268 (D3-Pak) (IXGT) Symbol Test Conditions VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 32 A IC90 TC = 90°C 16 A ICM TC = 25°C, 1 ms 80 A SSOA (RBSOA) VGE = 15 V, TVJ = 125°C, RG = 10 Ω Clamped inductive load PC Maximum Ratings ICM = 40 @ 0.8 VCES TC = 25°C 190 W -55 ... +150 °C 150 °C Tstg -55 ... +150 °C 300 260 °C °C TL TSOLD 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Md Mounting torque (M3) Weight TO-247 AD TO-268 1.13/10Nm/lb.in. 6 4 E C (TAB) TO-247 (IXGH) A TJM TJ G g g G G = Gate, E = Emitter, C (TAB) C E C = Collector, TAB = Collector Features z z z z z International standard packages JEDEC TO-268 and JEDEC TO-247 AD High current handling capability MOS Gate turn-on - drive simplicity Rugged NPT structure Molding epoxies meet UL 94 V-0 flammability classification Applications Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. z z z z = 250 μA, VGE = 0 V = 250 μA, VCE = VGE BVCES VGE(th) IC IC ICES VCE = 0.8 • VCES VGE = 0 V IGES VCE = 0 V, VGE = ±20 V VCE(sat) IC = IC90, VGE = 15 V 1700 3.0 TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C © 2006 IXYS CORPORATION All rights reserved 2.7 3.3 5.0 V V 50 500 μA μA ±100 nA 3.5 V V z z Capacitor discharge & pulser circuits AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power supplies Advantages z z z High power density Suitable for surface mounting Easy to mount with 1 screw, (isolated mounting screw hole) DS98996C(07/06) IXGH 16N170 IXGT 16N170 Symbol Test Conditions gfs IC = IC90; VCE = 10 V, Pulse test, t ≤ 300 μs, duty cycle ≤ 2 % IC(ON) Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. 10 ∅P VGE = 10V, VCE = 10V 65 A 1650 pF 75 pF 26 pF VCE = 25 V, VGE = 0 V, f = 1 MHz Cres Qg Qge IC = IC90, VGE = 15 V, VCE = 0.5 VCES Qgc td(on) Inductive load, TJ = 25°°C tri IC = IC90, VGE = 15 V VCE = 0.8 VCES, RG = Roff = 10 Ω S 1 Cies Coes 14 13 nC Dim. 24 nC 45 ns 48 770 1100 ns Eoff 9.3 14 mJ 48 ns 42 ns 1.5 mJ Eon IC = IC90, VGE = 15 V VCE = 0.8 VCES, RG = Roff = 10 Ω 430 ns tfi 1170 ns Eoff 11.2 mJ td(off) 2 - Drain Tab - Drain Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC TO-268 (IXGT) Outline (D3-Pak) 0.65 °C/W RthJC RthCS Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC ns tfi Inductive load, TJ = 125°°C e nC ns tri 3 78 600 td(on) 2 Terminals: 1 - Gate 3 - Source 400 td(off) TO-247 (IXGH) Outline (TO-247) 0.25 °C/W Ref: IXYS CO 0052 RA IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or moreof the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6,771,478 B2 7,005,734 B2 IXGH 16N170 IXGT 16N170 Fig. 1. Output Characteristics Fig. 2. Extended Output Characteristics @ 25 Deg. C 32 V G E = 1 7V 1 5V 1 3V 11V 28 24 V G E = 1 7V 140 9V 20 I C - Amperes I C - Amperes @ 25 deg. C 160 16 7V 12 120 15V 100 13V 80 60 8 40 4 20 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 1 1V 5 9V 7V 0 V CE - V olts Fig. 3. Output Characteristics @ 125 Deg. C I C - Amperes 24 8 10 V CE - V olts 12 9V 7V 12 8 0 2.5 18 1.6 I C = 32A 1.4 I C = 1 6A 1.2 1 I C = 8A 0.8 4 1.5 16 V G E = 1 5V 16 0.5 14 1.8 20 3.5 4.5 5.5 0.6 6.5 -50 -25 V CE - V olts 0 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage Fig. 6. Input Admittance vs. Gate-to-Emiiter voltage 56 10 T J = 25 º C 9 48 8 40 I C - Amperes 7 V CE - Volts 6 2 V G E = 1 7V 1 5V 1 3V 11V 28 4 Fig. 4. T emperature Dependence of V CE(sat) V C E (sat) - Normalized 32 2 6 5 I C = 32A 4 24 T J = 1 25 º C 16 16A 3 32 25 º C 8 2 -40 º C 8A 1 0 5 6 7 8 9 10 11 12 V GE - V olts © 2006 IXYS CORPORATION All rights reserved 13 14 15 3 4 5 6 7 V GE - V olts 8 9 10 IXGH 16N170 IXGT 16N170 Fig. 8. Dependence of Eoff on RG Fig. 7. T ransconductance 21 24 TJ = -40 º C 25 º C 22 125 º C 20 18 E off - milliJoules - Siemens 15 12 g fs 9 6 = 32A 16 I C 14 = 16A 10 0 8 0 8 16 24 32 40 48 56 0 10 20 30 40 50 60 I C - A mperes R G - Ohms Fig. 9. Dependence of Eoff on I C Fig. 10. Dependence of Eoff on T emperature 31 24 TJ = 125 º C V G E = 15V V C E = 1360V 20 V G E = 15V V C E = 1360V 25 R G = 50 Ohm s 18 R G = 10 Ohm s R G = 50 Ohm s - - - - - 28 E off - milliJoules 22 16 R G = 10 Ohm s 14 22 I C = 32A I C = 16A 19 16 13 12 10 10 7 16 18 20 22 24 26 28 30 0 32 25 50 75 100 125 150 TJ - Degrees Centigrade I C - A mperes Fig. 11. Gate Charge Fig. 12. Capacitance 15 10000 f = 1M H z V C E = 600V I C = 1 6A I G = 1 0m A Capacitance - pF 12 V G E - Volts C T J = 125 º C V G E = 15V V C E = 1360V 18 12 3 E off - milliJoules I 9 6 1000 C ies C oes 100 3 C res 0 10 0 10 20 30 Q 40 50 60 70 80 G - nanoCoulombs IXYS reserves the right to change limits, test conditions, and dimensions. 0 5 10 15 20 25 V CE - V olts 30 35 40 IXGH 16N170 IXGT 16N170 Fig. 13. Re ve rs e -Bias Safe Ope rating Are a 45 40 I C - Amperes 35 30 25 20 15 TJ = 125 ºC 10 R G = 10Ω 5 dV/dT < 10V/ns 0 100 300 500 700 900 1100 1300 1500 1700 V C E - V olts Fig. 14. Maximum T ransient T hermal Resistance R (th) J C - (ºC/W) 1 0.1 0.01 0.0001 0.001 0.01 0.1 Pulse Width - Seconds © 2006 IXYS CORPORATION All rights reserved 1 10 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. 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