IXGT16N170AH1

IXGT16N170A IXGH16N170A IXGT16N170AH1 IXGH16N170AH1 High Voltage IGBT w/ Sonic Diode VCES IC90 VCE(sat) tfi(typ) = = £ = 1700V 11A 5.0V 35ns H1 Symbol Test Conditions Maximum Ratings VCES TJ = 25C to 150C 1700 V VCGR TJ = 25C to 150C, RGE = 1M 1700 V VGES Continuous 20 V VGEM Transient 30 V IC25 TC = 25C 16 A IC90 TC = 90C 11 A IF90 TC = 90C 17 A ICM TC = 25C, 1ms 40 A SSOA VGE = 15V, TVJ = 125C, RG = 10 ICM = 40 A (RBSOA) Clamped Inductive Load tsc (SCSOA) VGE = 15V, VCE = 1200V, TJ = 125°C RG = 22, Non Repetitive PC TC = 25C TO-268 (IXGT) G E C (Tab) TO-247 (IXGH) 0.8 • VCES G 10 μs 190 W -55 ... +150 C TJM 150 C Tstg -55 ... +150 C Features 300 260 °C °C  1.13/10 Nm/lb.in  4 6 g g TJ TL TSOLD Maximum Lead Temperature for Soldering Plastic Body for 10s Md Mounting Torque (TO-247) Weight TO-268 TO-247 BVCES IC = 250A, VGE = 0V    VGE(th) IC = 250A, VCE = VGE ICES VCE = 0.8 • VCES, VGE = 0V TJ = 125C IGES VCE = 0V, VGE = 20V VCE(sat) IC © 2014 IXYS CORPORATION, All Rights Reserved 5.0 V 50 A 100 A 750 A 1.5 mA 16N170A 16N170AH1 16N170A 16N170AH1 = 11A, VGE = 15V, Note 1 TJ = 125C  V 3.0 100 4.0 4.5 5.0 C (Tab) C = Collector Tab = Collector High Blocking Voltage International Standard Packages Low Conduction Losses Anti-Parallel Sonic Diode High Blocking Voltage High Currect Handling Capability Advantages Characteristic Values Min. Typ. Max. 1700 E G = Gate E = Emiiter  Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) C nA V V  Low Gate Drive Requirement High Power Density Applications       Switch-Mode and Resonant-Mode Power Supplies Uninterruptible Power Supplies (UPS) AC Choppers Capacitor Discharge Circuits AC Motor Drives DC Servo & Robot Drives DS99235C(04/14) IXGH/T16N170A IXGH/T16N170AH1 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. IC = 16A, VCE = 10V, Note 1 6.0 Cies Coes VCE = 25V, VGE = 0V, f = 1MHz 16N170A 16N170AH1 Cres 12.5 S 1500 99 110 33 pF pF pF pF 70 nC 9 32 nC nC 12 ns 22 ns Qg(on) Qge IC = 11A, VGE = 15V, VCE = 0.5 • VCES Qgc td(on) tri Eon td(off) tfi Inductive load, TJ = 25°C IC = 16A, VGE = 15V 2.35 VCE = 0.5 • VCES, RG = 10 200 Note 2 Eoff td(on) tri Eon td(off) tfi Eoff TO-268 Outline Inductive load, TJ = 125°C IC = 16A, VGE = 15V VCE = 0.5 • VCES, RG = 10 Note 2 RthJC RthCS Terminals: 1 - Gate 3 - Emitter 2,4 - Collector mJ 300 ns 35 150 ns 0.38 1.50 mJ 13 22 2.80 210 88 0.67 ns ns mJ ns ns mJ 0.21 0.65 C/W C/W TO-247 Outline 1 2 P 3 Reverse Sonic Diode (FRD) (TJ = 25°C, Unless Otherwise Specified) Symbol Test Conditions VF trr IRM IF = 20A, VGE = 0V, Note 1 IF = 10A, VGE = 0V, -diF/dt = 250A/μs, VR = 900V Characteristic Values Min. Typ. Max. 3.4 TJ = 125C 2.8 TJ = 125C 300 550 13 15 TJ = 125C RthJC Notes: V ns ns A A 1.5 °C/W 1. Pulse test, t  300μs, duty cycle, d  2%. 2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG. e Terminals: 1 - Gate 3 - Emitter Dim. Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC 2 - Collector Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXGH/T16N170A IXGH/T16N170AH1 Fig. 1. Output Characteristics @ TJ = 25ºC Fig. 2. Extended Output Characteristics @ TJ = 25ºC 32 VGE = 15V 13V 11V 10V 9V 28 14V 100 13V 8V 20 I C - Amperes I C - Amperes 24 VGE = 15V 120 16 12 7V 80 12V 11V 60 10V 40 8 9V 6V 4 20 8V 0 7V 6V 5V 0 0 1 2 3 4 5 6 7 8 0 5 10 15 VCE - Volts 1.8 32 VGE = 15V 13V 11V 10V 9V 30 VGE = 15V 1.6 VCE(sat) - Normalized I C - Amperes 24 25 Fig. 4. Dependence of VCE(sat) on Junction Temperature Fig. 3. Output Characteristics @ TJ = 125ºC 28 20 VCE - Volts 8V 20 16 7V 12 8 I C = 32A 1.4 1.2 I C = 16A 1.0 0.8 6V I C = 8A 0.6 4 5V 0 0.4 0 1 2 3 4 5 6 7 8 9 10 -50 -25 0 25 VCE - Volts 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance 10 50 TJ = 25ºC 9 45 40 8 35 I C - Amperes V CE - Volts I C = 32A 7 6 16A 5 30 25 20 15 TJ = 125ºC 25ºC 10 4 8A 5 3 - 40ºC 0 6 7 8 9 10 11 12 VGE - Volts © 2014 IXYS CORPORATION, All Rights Reserved 13 14 15 3 4 5 6 7 VGE - Volts 8 9 10 IXGH/T16N170A IXGH/T16N170AH1 Fig. 8. Gate Charge Fig. 7. Transconductance 22 16 TJ = - 40ºC 20 VCE = 850V 14 I C = 11A 18 25ºC 14 VGE - Volts g f s - Siemens I G = 10mA 12 16 125ºC 12 10 8 6 10 8 6 4 4 2 2 0 0 0 5 10 15 20 25 30 35 40 45 50 55 0 10 20 I C - Amperes Fig. 9. Capacitance 40 50 60 70 Fig. 10. Reverse-Bias Safe Operating Area 10,000 45 f = 1 MHz 40 35 Cies Capacitance - PicoFarads 30 QG - NanoCoulombs I C - Amperes 1,000 Coes 100 30 25 20 15 10 TJ = 125ºC RG = 10Ω dv / dt < 10V / ns 5 Cres 10 0 0 5 10 15 20 25 30 35 40 100 300 500 700 900 1100 1300 1500 1700 VCE - Volts VCE - Volts Fig. 11. Maximum Transient Thermal Impedance (IGBT) Z (th)JC - ºC / W 1 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.1 1 10 IXGH/T16N170A IXGH/T16N170AH1 Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance 3.0 Eoff 2.5 Eon - 1.0 12 --- 1.0 4 2 I C = 16A 0.0 30 40 50 60 70 0.6 4 TJ = 25ºC 0.5 3 0.4 2 0.3 1 0 8 12 16 20 24 28 Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance Eon 120 8 ---- 110 7 I C = 16A 0.2 t f i - Nanoseconds 3 2 0 50 75 800 td(off) - - - - 700 VCE = 850V 90 600 80 500 I C = 16A 70 400 60 300 I C = 32A 50 200 40 100 30 1 125 100 0 10 20 30 40 50 60 70 TJ - Degrees Centigrade RG - Ohms Fig. 16. Inductive Turn-off Switching Times vs. Collector Current Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature tfi 120 280 td(off) - - - - 60 200 40 180 TJ = 25ºC 160 0 140 12 16 20 24 I C - Amperes © 2014 IXYS CORPORATION, All Rights Reserved 28 32 td(off) - - - - 280 260 RG = 10Ω , VGE = 15V 240 VCE = 850V 70 80 220 I C = 16A 60 200 50 180 40 160 I C = 32A 30 140 20 120 10 25 50 75 TJ - Degrees Centigrade 100 100 125 t d(off) - Nanoseconds 220 TJ = 125ºC t d(off) - Nanoseconds 240 80 20 tfi 90 80 VCE = 850V 100 100 260 RG = 10Ω , VGE = 15V 900 t d(off) - Nanoseconds 0.4 Eon - MilliJoules 5 4 25 tfi 32 TJ = 125 VGE = 15V 100 6 0.6 8 5 Fig. 14. Inductive Switching Energy Loss vs. Junction Temperature I C = 32A 140 TJ = 125ºC I C - Amperes VCE = 850V 0.8 6 0.7 80 RG = 10Ω , VGE = 15V 1 VCE = 850V RG - Ohms Eoff 1.2 Eoff - MilliJoules 20 7 0.2 0 1.4 t f i - Nanoseconds Eoff - MilliJoules 6 I C = 32A t f i - Nanoseconds Eoff - MilliJoules 1.5 ---- Eon - MilliJoules 8 Eon - MilliJoules 2.0 Eon 8 RG = 10Ω , VGE = 15V 0.8 VCE = 850V 10 Eoff 0.9 10 TJ = 125ºC , VGE = 15V 0.5 Fig. 13. Inductive Switching Energy Loss vs. Collector Current IXGH/T16N170A IXGH/T16N170AH1 Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance tri 90 50 80 45 60 50 50 40 I C = 16A 50 60 70 td(on) - - - - 8 0 5 24 t r i - Nanoseconds 40 16 30 14 20 12 t d(on) - Nanoseconds 18 I C = 32A I C = 16A 10 10 0 25 50 6 8 80 20 VCE = 850V 75 100 14 10 22 50 TJ = 25ºC 25 10 RG = 10Ω , VGE = 15V 60 16 12 16 20 I C - Amperes Fig. 20. Inductive Turn-on Switching Times vs. Junction Temperature tri 30 10 RG - Ohms 70 18 TJ = 125ºC 15 20 40 35 20 30 10 20 VCE = 850V 12 30 80 22 20 40 30 td(on) - - - - 8 125 TJ - Degrees Centigrade IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 24 28 32 t d(on) - Nanoseconds 60 t d(on) - Nanoseconds I C = 32A 70 20 40 70 VCE = 850V 10 tri 24 RG = 10Ω , VGE = 15V TJ = 125ºC, VGE = 15V 80 t r i - Nanoseconds td(on) - - - - 90 t r i - Nanoseconds 100 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current IXGH/T16N170A IXGH/T16N170AH1 Fig. 21. Forward Current IF vs VF Fig. 22. Reverse Recovery Charge Qrr vs. -diF/dt 4.0 20 18 3.6 IF = 20A 16 14 TVJ = 125ºC 3.2 TVJ = 25ºC VR = 900V 125ºC 12 IF 10 [A] Qrr [µC] 8 6 2.8 2.4 10A 2.0 4 5A 1.6 2 0 1.2 0 0.5 1 1.5 2 2.5 3 200 300 VF [V] 500 600 700 -diF/dt [A/µs] Fig. 23. Peak Reverse Current IRM vs. -diF/dt Fig. 24. Recovery Time trr vs. -diF/dt 28 700 IF = 20A 26 400 TVJ = 125ºC VR = 900V 24 10A 650 TVJ = 125ºC 600 VR = 900V 550 5A 22 IF = 20A 500 I RM 20 [A] trr 450 [ns] 400 18 350 16 300 14 12 200 10A 250 300 400 500 600 200 10 700 Fig. 28. Maximum Transient Thermal Impedance 200 300 400 500 5A 600 700 -diF/dt [A/µs] -diF/dt [A/µs] Fig. 25. Recovery Energy Erec vs -diF/dt Fig. 26. Maximum Transient Thermal Impedance (Diode) 4.0 aaa 3 TVJ = 125ºC 3.5 VR = 900V Z (th)JC - ºC / W IF = 20A 3.0 Erec 2.5 [mJ] 2.0 1 10A 1.5 5A 1.0 200 300 400 500 -diF/dt [A/µs] © 2014 IXYS CORPORATION, All Rights Reserved 600 700 0.1 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS REF: G_16N170A(4N) 04-10-14 / DH10A-1800PA Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. 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