IXGT20N120BD1

High Voltage IGBT with Diode VCES IC25 VCE(sat) IXGH 20N120BD1 IXGT 20N120BD1 tfi(typ) Preliminary Data Sheet Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 40 A IC110 TC = 110°C 20 A ICM TC = 25°C, 1 ms 100 A SSOA (RBSOA) VGE = 15 V, TJ = 125°C, RG = 10 Ω Clamped inductive load ICM = 80 @0.8 VCES A PC TC = 25°C 190 W Maximum Ratings -55 ... +150 °C TJ TJM 150 °C Tstg -55 ... +150 °C Md Mounting torque (TO-247) 1.13/10 Nm/lb.in. Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s 300 °C Maximum tab temperature soldering SMD devices for 10s 260 °C 6/4 g Weight TO-247AD/TO-268 G Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. IC = 1 µA, VGE = 0 V VGE(th) IC = 250 µA, VCE = VGE ICES VCE = VCES VGE = 0 V IGES VCE = 0 V, VGE = ±20 V VCE(sat) IC = 20A, VGE = 15 V Note 2 © 2003 IXYS All rights reserved 1200 E G = Gate E = Emitter TJ = 25°C TJ = 125°C TJ=125°C 5.0 V 150 µA µA ±100 nA 3.4 V V 50 2.9 2.8 C (TAB) C = Collector TAB = Collector Features z z International standard packages: JEDEC TO-247AD & TO-268 IGBT and anti-parallel FRED for resonant power supplies - Induction heating - Rice cookers MOS Gate turn-on - drive simplicity Fast Recovery Expitaxial Diode (FRED) - soft recovery with low IRM Advantages V 2.5 TAB E G z BVCES C TO-268 (IXGT) z Test Conditions V A V ns TO-247AD (IXGH) z Symbol = 1200 = 40 = 3.4 = 160 z z Saves space (two devices in one package) Easy to mount with 1 screw (isolated mounting screw hole) Reduces assembly time and cost DS98985E(07/03) IXGH 20N120BD1 IXGT 20N120BD1 Symbol Test Conditions gfs IC = 20A; VCE = 10 V, Note 2. Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 12 Cies Coes VCE = 25 V, VGE = 0 V, f = 1 MHz Cres Qg Qge IC = 20A, VGE = 15 V, VCE = 0.5 VCES Qgc 18 S 1700 pF 105 pF 39 pF 72 nC 12 nC 27 nC td(on) Inductive load, TJ = 25°°C 25 ns tri IC = 20 A; VGE = 15 V VCE = 0.8 VCES; RG = Roff = 10 Ω Note 1. 15 ns td(off) tfi Eoff 150 280 160 2.1 320 n s 3.5 mJ ns td(on) Inductive load, TJ = 125°°C 25 ns tri IC = 20A; VGE = 15 V 18 ns Eon VCE = 0.8 VCES; RG = Roff = 10 Ω td(off) Note 1 tfi Eoff RthJC RthCK (TO-247) Reverse Diode (FRED) 1.9 mJ 270 ns 360 3.5 ns mJ 0.25 0.65 K/W K/W Test Conditions VF IF = 10 A, VGE = 0 V 3.3 V IF TC = 90°C 10 A IRM t rr IF = 10 A; -diF/dt = 400 A/µs, VR = 600 V VGE = 0 V; TJ = 125°C t rr IF = 1 A; -diF/dt = 100 A/µs; VR = 30 V, VGE = 0 V 14 120 A ns 40 ns 2.5 K/W RthJC 1. 2. 1 = Gate 2 = Collector 3 = Emitter Tab = Collector TO-268 Outline Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Notes: TO-247 AD Outline Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % Dim. A A1 A2 b b2 C D E E1 e H L L1 Millimeter Min. Max. 4.9 5.1 2.7 2.9 .02 .25 1.15 1.45 1.9 2.1 .4 .65 13.80 14.00 15.85 16.05 13.3 13.6 5.45 BSC 18.70 19.10 2.40 2.70 1.20 1.40 Inches Min. Max. .193 .201 .106 .114 .001 .010 .045 .057 .75 .83 .016 .026 .543 .551 .624 .632 .524 .535 .215 BSC .736 .752 .094 .106 .047 .055 L2 L3 L4 1.00 1.15 0.25 BSC 3.80 4.10 .039 .045 .010 BSC .150 .161 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 IXGH 20N120BD1 IXGT 20N120BD1 Fig. 1. Output Characteristics Fig. 2. Extended Output Characteristics @ 25 Deg. C @ 25 deg. C 40 160 VG E = 15V 13V 11V I C - Amperes 30 9V I C - Amperes 35 25 7V 20 15 10 VG E = 15V 140 13V 120 11V 100 9V 80 60 7V 40 5V 5 20 0 5V 0 1 1.5 2 2.5 3 3.5 4 4.5 0 5 2 4 6 Fig. 3. Output Characteristics @ 125 Deg. C 12 14 16 18 1.4 VG E = 15V 13V 11V 30 VG E = 15V 1.3 VCE (sat) - Normalized 35 I C - Amperes 10 Fig. 4. Temperature Dependence of V CE(sat) 40 9V 25 20 7V 15 10 5V 5 I C = 40A 1.2 1.1 1 I C = 20A 0.9 0.8 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 I C = 10A 0.7 5 -50 V CE - Volts 0 25 50 75 100 125 150 70 80 Fig. 6. Transconductance 27 70 24 60 21 G f s - Siemens 80 50 40 30 T J = -40ºC 25ºC 125ºC 20 -25 TJ - Degrees Centigrade Fig. 5. Input Admittance I C - Amperes 8 V CE - Volts V CE - Volts T J = -40ºC 25ºC 125ºC 18 15 12 9 6 10 3 0 0 3 4 5 6 7 V GE - Volts © 2003 IXYS All rights reserved 8 9 10 0 10 20 30 40 50 I C - Amperes 60 IXGH 20N120BD1 IXGT 20N120BD1 Fig. 8. Dependence of Eoff on IC Fig. 7. Dependence of Eoff on RG 14 14 I C = 40A 10 T J = 125ºC VG E = 15V VC E = 960V 8 I C = 20A 6 4 2 T J = 125ºC VG E = 15V VC E = 960V 12 E off - milliJoules E off - milliJoules 12 10 R G= 56 Ohms 8 R G = 5 Ohms 6 4 I C = 10A 0 2 0 10 20 30 40 50 60 10 15 20 Fig. 9. Dependence of Eoff on Temperature 40 VC E = 600V I C = 20A I G = 10mA 12 10 I C = 40A VG E - Volts E off - milliJoules 35 15 So lid lines - R G = 56 Ohms Dashed lines - R G = 5 Ohms VG E = 15V VC E = 960V 12 30 Fig. 10. Gate Charge 16 14 25 I C - Amperes R G - Ohms 8 I C = 20A 6 4 9 6 3 2 I C = 10A 0 0 0 25 50 75 100 125 0 150 10 20 30 40 50 60 70 80 TJ - Degrees Centigrade Q G - nanoCoulombs Fig. 11. Reverse-Bias Safe Operating Area Fig. 12. Maximum Transient Thermal Resistance 1 90 80 IC - Amperes 60 R (th) J C - (ºC/W) TJ = 125º C R G = 10 Ohms dV/dT < 10V/ns 70 50 40 30 20 10 0 0.1 100 300 500 700 900 1100 1300 V CE - Volts 1 10 100 1000 Pulse Width - milliseconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 IXGH 20N120BD1 IXGT 20N120BD1 70 A 60 5 µC Qr IF 50 60 TVJ= 100°C VR = 600V TVJ= 100°C VR = 600V A 50 4 IRM 40 TVJ=150°C 40 TVJ=100°C TVJ= 25°C 30 3 IF= 60A IF= 30A IF= 15A 2 IF= 60A IF= 30A IF= 15A 30 20 20 1 10 10 0 0 1 2 3 V 0 100 4 0 A/µs 1000 -diF/dt VF Fig. 13. Forward current IF versus VF Fig. 14. Reverse recovery charge Qr versus -diF/dt 220 2.0 1.2 TVJ= 100°C IF = 30A tfr 0.8 VFR IF= 60A IF= 30A IF= 15A 1.0 160 µs tfr 80 180 IRM 600 A/µs 800 1000 -diF/dt Fig. 15. Peak reverse current IRM versus -diF/dt VFR trr Kf 400 V 200 1.5 200 120 TVJ= 100°C VR = 600V ns 0 40 0.4 0.5 140 Qr 0.0 120 0 40 80 120 °C 160 0 0 200 TVJ 400 600 800 1000 A/µs 0 400 -diF/dt Fig. 16. Dynamic parameters Qr, IRM versus TVJ Fig. 17. Recovery time trr versus -diF/dt 1 0.0 600 A/µs 800 1000 diF/dt Fig. 18. Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJC calculation: K/W i 0.1 1 2 3 ZthJC 0.01 0.001 0.00001 200 DSEP 30-12A/DSEC 60-12A 0.0001 0.001 0.01 s 0.1 t Fig. 19. Transient thermal resistance junction to case © 2003 IXYS All rights reserved 1 Rthi (K/W) ti (s) 0.465 0.179 0.256 0.0052 0.0003 0.0397