IXGT25N160

High Voltage IGBT VCES = 1600 V IC25 = 75 A VCE(sat) = 2.5 V IXGH 25N160 IXGT 25N160 For Capacitor Discharge Applications Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1600 V VGES Continuous ± 20 V VGEM Transient ± 30 V IC25 TC = 25°C 75 A IC110 TC = 110°C 25 A ICM TC = 25°C, VGE = 20 V, 1 ms 200 A SSOA (RBSOA) VGE = 15 V, TVJ = 125°C, RG = 20 Ω Clamped inductive load ICM = 100 @ 0.8 VCES A PC TC = 25°C 300 W -55 ... +150 °C TJ TJM 150 °C Tstg -55 ... +150 °C Maximum Lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Maximum Tab temperature for soldering SMD devices for 10 s Md Mounting torque (TO-247) TO-247 TO-268 Test Conditions IC IC ICES VCE = 0.8 • VCES VGE = 0 V IGES VCE = 0 V, VGE = ±30 V VCE(sat) IC IC = IC110, VGE = 15 V = 100 A, VGE = 20 V © 2005 IXYS All rights reserved 260 °C 6 4 g g Characteristic Values (TJ = 25°C unless otherwise specified) min. typ. max. = 250 μA, VGE = 0 V = 250 μA, VCE = VGE BVCES VGE(th) °C 1.13/10 Nm/lb-in Weight Symbol 300 1600 3.0 TJ = 125°C 5.0 V V 50 1 μA mA ±100 nA 2.5 4.7 V V TO-247 (IXGH) G C C (TAB) E TO-268 (IXGT) G E C (TAB) G = Gate, E = Emitter, C = Collector, TAB = Collector Features High peak current capability Low saturation voltage MOS Gate turn-on -drive simplicity Rugged NPT structure International standard packages - JEDEC TO-268 and - JEDEC TO-247 AD Molding epoxies meet UL 94 V-0 flammability classification Applications Capacitor discharge Pulser circuits Advantages High power density Suitable for surface mounting Easy to mount with 1 screw, (isolated mounting screw hole) DS99381(12/05) IXGH 25N160 IXGT 25N160 Symbol Test Conditions Characteristic Values (TJ = 25°C unless otherwise specified) min. typ. max. gfs IC = 50 A; VCE = 10 V, Note 1 IC(ON) Cies 21 S VGE = 15V, VCE = 10V, Note 1 200 A VCE = 25 V, VGE = 0 V, f = 1 MHz 2090 pF Coes 94 pF Cres 34 pF 84 nC 15 nC Qg 14 IC = 50 A, VGE = 15 V, VCE = 0.5 VCES Qge Qgc td(on) Resistive load tri IC = 100 A, VGE = 15 V, Note 1 VCE = 1200 V, RG = 10 Ω td(off) tfi 37 nC 47 ns 236 ns 86 ns 440 ns RthJC RthCK 0.42 K/W (TO-247) 0.25 K/W Notes: 1. Pulse test, t < 300 μs, duty cycle < 2 % TO-268: Minimum Recommended Footprint TO-247 AD Outline ∅P e Dim. Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC TO-268 Outline Dim. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a subjective pre-production design evaluation. Ixys reserves the right to change limits, test conditions, and dimensions without notice. A A1 A2 b b2 C D E E1 e H L L1 Millimeter Min. Max. 4.9 5.1 2.7 2.9 .02 .25 1.15 1.45 1.9 2.1 .4 .65 13.80 14.00 15.85 16.05 13.3 13.6 5.45 BSC 18.70 19.10 2.40 2.70 1.20 1.40 Inches Min. Max. .193 .201 .106 .114 .001 .010 .045 .057 .75 .83 .016 .026 .543 .551 .624 .632 .524 .535 .215 BSC .736 .752 .094 .106 .047 .055 L2 L3 L4 1.00 1.15 0.25 BSC 3.80 4.10 .039 .045 .010 BSC .150 .161 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6771478 B2 IXGH 25N160 IXGT 25N160 Fig. 1. Output Characteristics @ 25ºC Fig. 2. Exteded Output Characteristics @ 25ºC 150 275 VGE = 25V 20V VGE = 25V 250 125 20V 225 IC - Amperes I C - Amperes 200 100 15V 75 10V 50 15V 175 150 125 100 75 10V 50 25 25 0 0 0 1 2 3 4 5 0 6 2 4 6 8 Fig. 3. Output Characteristics @ 125ºC 12 14 16 18 20 Fig. 4. Dependence of VCE(sat) on Junction Temperature 150 2.1 VGE = 25V 20V VGE = 15V 1.9 VCE(sat) - Normalized 125 IC - Amperes 10 VCE - Volts VCE - Volts 15V 100 75 10V 50 I C = 150A 1.7 1.5 1.3 I C = 100A 1.1 0.9 I C = 50A 25 0.7 0 0.5 0 1 2 3 4 5 6 7 -50 8 -25 0 25 50 Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage 100 125 150 Fig. 6. Input Admittance 10 200 180 TJ = 25ºC 9 160 8 I C = 150A 100A 50A 7 TJ = - 40ºC 25ºC 125ºC 140 IC - Amperes VCE - Volts 75 TJ - Degrees Centigrade VCE - Volts 6 5 120 100 80 60 4 40 3 20 0 2 7 9 11 13 15 17 VGE - Volts © 2005 IXYS All rights reserved 19 21 23 25 4 5 6 7 8 9 10 VGE - Volts 11 12 13 14 15 IXGH 25N160 IXGT 25N160 Fig. 8. Resistive Turn-On Rise Time vs. Junction Temperature Fig. 7. Transconductance 27 480 24 440 I C = 150A 400 t r - Nanoseconds g f s - Siemens 21 18 TJ = - 40ºC 25ºC 125ºC 15 12 9 360 RG = 10Ω VGE = 15V 320 VCE = 1200V I C = 100A 280 240 6 200 3 I C = 50A 160 0 0 20 40 60 80 100 120 140 160 180 25 200 35 45 I C - Amperes 700 500 650 VGE = 15V 95 105 115 82 78 TJ = 125ºC, VGE = 15V 74 VCE = 1200V t r - Nanoseconds I C = 150A 380 340 TJ = 125ºC 300 260 TJ = 25ºC 180 140 550 70 500 66 450 62 400 58 I C = 50A, 100A 350 54 300 50 250 46 200 50 60 70 80 90 100 110 120 130 140 42 150 10 15 20 25 I C - Amperes 125 1100 120 tf 110 105 td(off) - - - - 100 RG = 10Ω, VGE = 15V 95 VCE = 1200V I C = 100A, 150A 90 400 85 300 80 200 75 100 25 35 45 55 65 75 85 50 95 td(off) - - - - RG = 10Ω, VGE = 15V 116 VCE = 1200V 70 105 115 125 TJ - Degrees Centigrade IXYS reserves the right to change limits, test conditions, and dimensions. 820 108 TJ = 25ºC 660 100 500 92 TJ = 25ºC 340 84 180 50 60 70 80 90 76 100 110 120 130 140 150 I C - Amperes t d ( o f f ) - Nanoseconds I C = 50A t d ( o f f ) - Nanoseconds 900 500 45 124 980 115 600 40 1140 t f - Nanoseconds 1000 tf 35 Fig. 12. Resistive Turn-Off Switching Times vs. Collector Current 1200 700 30 RG - Ohms Fig. 11. Resistive Turn-Off Switching Times vs. Junction Temperature 800 125 t d ( o n ) - Nanoseconds t r - Nanoseconds 85 VCE = 1200V 600 220 t f - Nanoseconds 75 td(on) - - - - tr RG = 10Ω 420 65 Fig. 10. Resistive Turn-On Switching Times vs. Gate Resistance Fig. 9. Resistive Turn-On Rise Time vs. Collector Current 460 55 TJ - Degrees Centigrade IXGH 25N160 IXGT 25N160 Fig. 13. Resistive Turn-Off Switching Times vs. Gate Resistance 1000 400 14 VCE = 1200V 350 I C = 50A 700 300 600 250 500 200 400 150 I C = 150A, 100A 300 200 10 15 20 25 30 35 40 45 t d ( o f f ) - Nanoseconds t f - Nanoseconds 16 VCE = 800V I C = 50A I G = 10 mA 12 VGE - Volts TJ = 125ºC, VGE = 15V 800 450 td(off) - - - - tf 900 Fig. 14. Gate Charge 10 8 6 4 100 2 50 0 50 0 10 20 RG - Ohms 40 50 60 70 80 90 QG - NanoCoulombs Fig. 15. Reverse-Bias Safe Operating Area Fig. 16. Capacitance 110 10,000 f = 1 MHz 100 C ies Capacitance - PicoFarads 90 80 IC - Amperes 30 1,000 70 60 50 40 30 TJ = 125ºC 20 C oes 100 RG = 20Ω dV / dT < 10V / ns 10 C res 0 10 200 400 600 800 1000 1200 1400 1600 0 5 VCE - Volts 10 15 20 25 30 35 40 VCE - Volts Fig. 17. Maximum Transient Thermal Resistance R(th)JC - ºC / W 1.00 0.10 0.01 0.0001 0.001 0.01 Pulse Width - Seconds © 2005 IXYS All rights reserved 0.1 1 10 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications.Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.