IXGT28N120B

High Voltage IGBT IXGH 28N120B VCES = 1200 V = 50 A IXGT 28N120B IC25 VCE(sat) = 3.5 V tfi(typ) = 160 ns Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 50 A IC110 TC = 110°C 28 A ICM TC = 25°C, 1 ms 150 A SSOA (RBSOA) VGE = 15 V, TVJ = 125°C, RG = 5 Ω Clamped inductive load PC Maximum Ratings ICM = 120 @ 0.8 VCES A 250 W TC = 25°C -55 ... +150 °C 150 °C Tstg -55 ... +150 °C Maximum Lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Maximum Tab temperature for soldering SMD devices for 10 s Md Mounting torque (M3) (TO-247) Weight Symbol Test Conditions BVCES VGE(th) IC IC ICES VCE = VCES, VGE= 0 V IGES VCE = 0 V, VGE = ±20 V VCE(sat) IC 300 °C 260 °C 1.13/10Nm/lb.in. TO-247 AD TO-268 G E 6 4 g g Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. C (TAB) TO-247 AD (IXGH) G TJM TJ TO-268 (IXGT) G = Gate, E = Emitter, C (TAB) C E C = Collector, TAB = Collector Features High Voltage IGBT for resonant power supplies - Induction heating - Rice cookers International standard packages JEDEC TO-268 and JEDEC TO-247 AD Low switching losses, low V(sat) MOS Gate turn-on - drive simplicity Advantages = 250 µA , VGE = 0 V = 250 µA, VCE = VGE = 28A, VGE = 15 V © 2004 IXYS All rights reserved 1200 2.5 TJ = 25°C TJ = 125°C 2.8 2.75 5 V V 25 µA ±100 nA 3.5 V V High power density Suitable for surface mounting Easy to mount with 1 screw, (isolated mounting screw hole) DS98987E(04/04) IXGH 28N120B IXGT 28N120B Symbol gfs Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. IC = 28A; VCE = 10 V, Pulse test, t ≤ 300 µs, duty cycle ≤ 2 % 15 Cies Coes VCE = 25 V, VGE = 0 V, f = 1 MHz Cres Qg Qge IC = 28A, VGE = 15 V, VCE = 0.5 VCES Qgc td(on) tri td(off) tfi Inductive load, TJ = 25°°C 23 S 1700 pF 120 pF 45 pF 92 nC 13 nC 35 nC 30 ns 20 IC = 28 A, VGE = 15 V VCE = 0.8 VCES, RG = Roff = 5 Ω 280 ns 170 320 ns 2.2 5.0 mJ td(on) 35 ns tri 28 ns 0.3 1.4 mJ mJ Eon td(off) IC = 28A, VGE = 15 V 28N120B 28N120BD1 250 ns tfi 340 ns Eoff 4.6 mJ VCE = 0.8 VCES, RG = Roff = 5 Ω RthJC RthCK ∅P e Dim. Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC ns 210 Eoff Inductive load, TJ = 125°°C TO-247 AD Outline Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC TO-268 Outline 0.5 K/W (TO-247) 0.25 K/W Dim. Min Recommended Footprint A A1 A2 b b2 C D E E1 e H L L1 Millimeter Min. Max. 4.9 5.1 2.7 2.9 .02 .25 1.15 1.45 1.9 2.1 .4 .65 13.80 14.00 15.85 16.05 13.3 13.6 5.45 BSC 18.70 19.10 2.40 2.70 1.20 1.40 Inches Min. Max. .193 .201 .106 .114 .001 .010 .045 .057 .75 .83 .016 .026 .543 .551 .624 .632 .524 .535 .215 BSC .736 .752 .094 .106 .047 .055 L2 L3 L4 1.00 1.15 0.25 BSC 3.80 4.10 .039 .045 .010 BSC .150 .161 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,850,072 4,835,592 4,931,844 4,881,106 5,034,796 5,017,508 5,063,307 5,049,961 5,237,481 5,187,117 5,381,025 5,486,715 6,404,065B1 6,306,728B1 6,162,665 6,534,343 6,583,505 6,259,123B1 6,306,728B1 6,683,344 IXGH 28N120B IXGT 28N120B Fig. 1. Output Characte ristics @ 25 ºC Fig. 2. Extended Output Characte ristics @ 25 ºC 56 240 VGE = 15V 49 15V 180 35 I C - Amperes I C - Amperes 42 VGE = 17V 210 13V 11V 9V 28 21 7V 13V 150 120 11V 90 9V 60 14 7 30 5V 7V 0 0 1 1.5 2 2.5 3 3.5 4 4.5 0 5 2 4 6 8 Fig. 3. Output Characteristics @ 125 ºC 14 16 18 20 1.4 VGE = 15V 49 13V 11V VGE = 15V 1.3 VC E (sat)- Normalized 42 I C - Amperes 12 Fig. 4. Dependence of V CE(sat) on Tem perature 56 9V 35 28 7V 21 14 I C = 56A 1.2 1.1 I C = 28A 1.0 0.9 I C = 14A 0.8 7 5V 0 0.7 1 1.5 2 2.5 3 3.5 V CE - Volts 4 4.5 -50 5 -25 0 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. Collector-to-Em itter Voltage vs. Gate-to-Em itter voltage Fig. 6. Input Adm ittance 8 100 TJ = 25ºC 90 7 80 6 I C = 56A I C - Amperes VC E - Volts 10 V C E - Volts V C E - Volts 28A 14A 5 4 70 60 50 40 TJ = 125ºC 30 25ºC 20 3 -40ºC 10 2 0 6 7 8 9 10 11 12 13 V G E - Volts © 2004 IXYS All rights reserved 14 15 16 17 4 5 6 7 V G E - Volts 8 9 10 IXGH 28N120B IXGT 28N120B Fig. 8. Dependence of Turn-off Fig. 7. Trans conductance Ene rgy Loss on RG 35 18 TJ = -40ºC 20 15 10 I C = 56A VGE = 15V 14 125ºC 25 TJ = 125ºC 16 25ºC E o f f - milliJoules g f s - Siemens 30 VCE = 960V 12 10 8 I C = 28A 6 4 5 I C = 14A 2 0 0 0 10 20 30 40 50 60 70 80 90 100 0 I C - Amperes 10 Fig. 9. Dependence of Turn-Off Energy Los s on IC 10 7 VCE = 960V 8 VCE = 960V E o f f - milliJoules E o f f - MilliJoules 8 VGE = 15V 5 4 TJ = 25ºC 3 0 35 40 45 50 55 I C = 14A 25 60 TJ = 125ºC VGE = 15V VCE = 960V 600 I C = 14A I C = 56A I C = 28A 400 Switching Time - nanoseconds tfi - - - - - - 800 55 65 75 85 95 105 115 125 Sw itching Tim e on IC 450 td(off) 1000 45 Fig. 12. Depe ndence of Turn-off Sw itching Tim e on RG 1200 35 TJ - Degrees Centigrade Fig. 11. Dependence of Turn-off 1400 100 3 1 30 90 4 0 I C - Amperes 80 I C = 28A 5 2 25 70 6 1 20 60 7 2 15 50 I C = 56A 9 6 40 R G - Ohms R G = 5Ω 10 VGE = 15V 10 Switching Time - nanoseconds 30 Fig. 10. De pende nce of Turn-off Ene rgy Loss on Tem pe rature 11 TJ = 125ºC R G = 5Ω 9 20 200 400 td(off) tfi - - - - - - 350 300 R G = 5Ω TJ = 125ºC VGE = 15V VCE = 960V 250 200 TJ = 25ºC 150 100 0 10 20 30 40 50 60 R G - Ohms 70 80 90 10 100 15 20 25 30 35 40 I C - Amperes 45 50 55 60 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,850,072 4,835,592 4,931,844 4,881,106 5,034,796 5,017,508 5,063,307 5,049,961 5,237,481 5,187,117 5,381,025 5,486,715 6,404,065B1 6,306,728B1 6,162,665 6,534,343 6,583,505 6,259,123B1 6,306,728B1 6,683,344 IXGH 28N120B IXGT 28N120B Fig. 13. Dependence of Turn-off Sw itching Tim e on Tem perature Fig. 14. Gate Charge 16 td(off) 400 tfi - - - - - - I G = 10mA I C = 14A VGE = 15V 300 I C = 28A 12 R G = 5Ω 350 VCE = 600V 14 I C = 56A VG E - Volts Switching Time - nanoseconds 450 VCE = 960V I C = 28A 250 200 10 8 6 4 150 I C = 14A 2 I C = 56A 100 0 25 35 45 55 65 75 85 95 105 115 125 0 TJ - Degrees Centigrade 10 30 40 50 60 70 80 90 100 Q G - nanoCoulombs Fig. 16. Reverse-Bias Safe Operating Area Fig. 15. Capacitance 10000 140 f = 1 MHz 120 C ies 1000 I C - Amperes Capacitance - p F 20 C oes 100 C res 10 100 80 60 40 TJ = 125ºC 20 dV/dT < 10V/ns R G = 5Ω 0 0 5 10 15 20 25 V C E - Volts 30 35 40 100 300 500 700 900 1100 1300 V C E - Volts Fig. 17. Maxim um Transient Therm al Resistance R ( t h ) J C - ºC / W 1.00 0.50 0.10 1 © 2004 IXYS All rights reserved 10 Pulse Width - milliseconds 100 1000 Disclaimer Notice - Information furnished is believed to be accurate and reliable. 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